MN1280
Abstract: KGT50N60kda bc547 smd transistor kia1117af transistor smd zG y6 smd transistor MB4213 y4 smd transistor smd transistor zaa KGT25N120NDA
Text: Table of Contents SMD THD ▣ Table of Contents 2 ▣ Bipolar Junction Transistor 4 Transistor Line-up PNP Transistor Transistor Line-up (NPN Transistor) Small Signal General Purpose Transistor Current Regulating Device Small Signal Low Noise Transistor
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oz960
Abstract: khb*9D5N20P MB4213 KIA78*pI MN1280 F10P048 KIA7812A MJE13007 mb4213 equivalent TRANSISTOR SMD N2 3j
Text: Table of Contents Index 4 SMD ✞✟ Bipolar Junction Transistors Transistor Line-up PNP Transistor Transistor Line-up (NPN Transistor) Small Signal General Purpose Transistors Small Signal Low Noise Transistors Small Signal Audio Muting Transistors Small Signal High hFE Transistors
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KIA7900PI
TC7SH04FU
KIC7SH04FU
SC604*
KAC3301QN
M51943
KIA7042AP/AF
TC7SH08FU
KIC7SH08FU
LT1937
oz960
khb*9D5N20P
MB4213
KIA78*pI
MN1280
F10P048
KIA7812A
MJE13007
mb4213 equivalent
TRANSISTOR SMD N2 3j
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Untitled
Abstract: No abstract text available
Text: 2SC2001 NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into three groups, O, Y and G, according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations.
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2SC2001
100mA
700mA
700mA,
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Untitled
Abstract: No abstract text available
Text: 2SC2001 NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into three groups, O, Y and G, according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations.
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2SC2001
100mA
700mA
700mA,
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2SC2001
Abstract: transistor 2sc2001
Text: ST 2SC2001 NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into three groups, O, Y and G, according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations.
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2SC2001
100mA
700mA
700mA,
2SC2001
transistor 2sc2001
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transistor 2sc2001
Abstract: 2SC2001 2SC2001 transistor
Text: ST 2SC2001 NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into three groups, O, Y and G, according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations.
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2SC2001
100mA
700mA
700mA,
transistor 2sc2001
2SC2001
2SC2001 transistor
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2SC2001
Abstract: No abstract text available
Text: ST 2SC2001 NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into three groups, O, Y and G, according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations.
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2SC2001
100mA
700mA
700mA,
2SC2001
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2SC2001
Abstract: No abstract text available
Text: ST 2SC2001 NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into three groups, O, Y and G, according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations.
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2SC2001
100mA
700mA
700mA,
2SC2001
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2SA1444 equivalent
Abstract: BA1F4M transistor equivalent table POWER MOS FET 2sj 2sk 2sd882 equivalent Equivalent to transistor 2sc945 2SA1206 TRANSISTOR equivalent 2SC1845 equivalent 2SK type 2SD1694 equivalent
Text: CD-ROM Transistor CD-ROM X13769XJ2V0CD00 08-1 Transistor Quick Reference by Package TO–92 • TO-92 Type Transistor VCEO V ~15 ~30 ~50 ~70 ~100 ~150 ~200 ~250 2SA1376 2SA1376A 2SC3478 2SC3478A 2SA1544 ~400 IC (A) ~20 m 2SC1674 2SA1206∗∗ 2SA988 2SA992
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X13769XJ2V0CD00
2SA1206
2SC1674
2SA988
2SA992
2SC1841
2SC1845
2SA733
2SA990
2SC945
2SA1444 equivalent
BA1F4M
transistor equivalent table
POWER MOS FET 2sj 2sk
2sd882 equivalent
Equivalent to transistor 2sc945
2SA1206 TRANSISTOR equivalent
2SC1845 equivalent
2SK type
2SD1694 equivalent
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2SD1557
Abstract: 2SA1152 2SC4333 high hfe transistor 2SB1581 2SC4063 high hfe darlington transistor sc70 2sB1099 transistor transistor nec 2SB1099
Text: Transistor Quick Reference by Package • TO-92 Type Transistor VCEO V ~15 ~30 ~50 ~70 ~100 ~150 ~200 ~250 2SA1376 2SA1376A 2SC3478 2SC3478A 2SA1544 ~400 IC (A) ~20 m 2SC1674 ~30 m 2SC1675 2SA1005 2SA1206* TO–92 2SA988 2SA992 2SC1841 2SC1845 ~50 m ~100 m
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2SA1376
2SA1376A
2SC3478
2SC3478A
2SA1544
2SC1674
2SC1675
2SA1005
2SA1206*
2SA988
2SD1557
2SA1152
2SC4333
high hfe transistor
2SB1581
2SC4063
high hfe darlington transistor sc70
2sB1099 transistor
transistor
nec 2SB1099
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2SC2001
Abstract: No abstract text available
Text: DC COMPONENTS CO., LTD. 2SC2001 DISCRETE SEMICONDUCTORS R TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR Description Designed for general purpose applications. TO-92 Pinning .190 4.83 .170(4.33) 1 = Emitter 2 = Collector 3 = Base o 2 Typ .190(4.83)
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2SC2001
700mA,
100mA,
2SC2001
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2SC2001
Abstract: 2sc2001 transistor
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors 2SC2001 TRANSISTOR NPN FEATURES Power dissipation PCM: Collector current ICM: Collector-base voltage V(BR)CBO: TO-92 0.6 W (Tamb=25℃) 1. EMITTER 0.7 A 2. COLLECTOR
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2SC2001
100mA
700mA,
30MHz
2SC2001
2sc2001 transistor
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Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors 2SC2001 TRANSISTOR(NPN ) FEATURES Power dissipation PCM : 0.6 Collector current ICM : 0.7 Collector-base voltage V BR CBO : 30 TO—92 W (Tamb=25℃) 1. EMITTER
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2SC2001
30MHz
270TYP
050TYP
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2SC2001
Abstract: 2SC2001L 2SC200 2SC2001K 2SC2001-L 2SC2001-M 2SC2001-K
Text: 2SC2001 0.7 A , 30 V NPN Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free TO-92 FEATURES High hFE and low VCE sat hFE(IC=100mA):200(Typ) VCE(sat)(700mA):0.2V(Typ) G
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2SC2001
100mA
700mA
2SC2001-M
2SC2001-L
2SC2001-K
700mA,
17-Feb-2011
100mA
2SC2001
2SC2001L
2SC200
2SC2001K
2SC2001-L
2SC2001-M
2SC2001-K
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2SC2001
Abstract: 2sc2001 transistor
Text: 2SC2001 2SC2001 TRANSISTOR NPN FEATURES Power dissipation PCM: Collector current ICM: Collector-base voltage V(BR)CBO: TO-92 0.6 W (Tamb=25℃) 1. EMITTER 0.7 A 2. COLLECTOR 30 V 3. BASE 1 2 3 Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃
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2SC2001
100mA
700mA,
30MHz
2SC2001
2sc2001 transistor
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2SC2001
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors 2SC2001 TO-92 TRANSISTOR NPN FEATURES z High hFE and low VCE(sat) hFE(IC=100mA) : 200(Typ) VCE(sat)(700mA): 0.2V (Typ) 1. EMITTER 2. COLLECTOR 3. BASE 1 2 3 MAXIMUM RATINGS(TA=25℃ unless otherwise noted)
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2SC2001
100mA)
700mA)
100mA
700mA,
30MHz
2SC2001
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2SC2001
Abstract: No abstract text available
Text: Transys Electronics L I M I T E D TO-92 Plastic-Encapsulated Transistors 2SC2001 TRANSISTOR NPN FEATURES Power dissipation PCM: Collector current ICM: Collector-base voltage V(BR)CBO: TO-92 0.6 W (Tamb=25℃) 1. EMITTER 0.7 A 2. COLLECTOR 30 V 3. BASE 1 2 3
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2SC2001
100mA
700mA,
30MHz
2SC2001
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uPC2581
Abstract: uPC2002 2sd1557 uPA67C uPB582 upc1237 uPC317 2P4M PIN DIAGRAM 2SC4328 uPC157
Text: C&C for Human Potential Microcomputer 1 SEMICONDUCTOR SELECTION GUIDE GUIDE BOOK IC Memory 2 Semi-Custom IC 3 Particular Purpose IC 4 General Purpose Linear IC 5 Transistor / Diode / Thyristor 6 Microwave Device / Consumer Use High Frequency Device 7 Optical Device 8
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PD7500
X10679EJAV0SG00
MF-1134)
1995P
uPC2581
uPC2002
2sd1557
uPA67C
uPB582
upc1237
uPC317
2P4M PIN DIAGRAM
2SC4328
uPC157
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sc5 s dc 6v relay
Abstract: P48D-70-600 UPD66010 UPD7752 AC03E uPD7520 uPA1601 UPD70208H uPD72020 uPD16503
Text: SEMICONDUCTORS SELECTION GUIDE Microcomputer 1 IC Memory 2 Semi-Custom IC 3 Particular Purpose IC 4 General Purpose Linear IC 5 Transistor/Diode/Thyristor 6 Microwave Device/ Consumer-Use High Frequency Device 7 Optical Device 8 Packages 9 Index 10 October 1997
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Corpora1-504-2860
X10679EJEV0SG00
sc5 s dc 6v relay
P48D-70-600
UPD66010
UPD7752
AC03E
uPD7520
uPA1601
UPD70208H
uPD72020
uPD16503
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y51 h 120c
Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711
Text: Towers' International Transistor Selector ! o Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U pdate Three London: NEW YORK
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500MA
500MA
240MWF
240MWF
y51 h 120c
bd124
KT368
BFQ59
Silec Semiconductors
BD214
al103
AFY18
bd192
MM1711
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Untitled
Abstract: No abstract text available
Text: fr P 2SC2001 SEMICONDUCTOR FORWARD INTERNATIONAL ELECTRONICS LTD. NPN EPITAXIAL SILICON TRANSISTOR TECHNICAL DATA GENERAL PURPOSE APPLICATIONS HIGH TOTAL POWER DISSIPATION PT=600mW * Complement To 2SA952 * High Hfe And Low Vcesat * Collector-Base Voltage VCBO=30V
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2SC2001
600mW)
2SA952
100mA
700mA
700mA
ItH70mA
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transistor 2sc2001
Abstract: 2SC2001
Text: NPN SILICON TRANSISTOR 2SC2001 DESC R IP TIO N The 2SC2001 is designed for use in output stage of portable R A D IO and cassette type tape recorder, general purpose applica tions. FEATURES • High total power dissipation. PT : 600 mW • High hFE and low V CE sat
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2SC2001
2SC2001
transistor 2sc2001
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tl700
Abstract: 2SC2001 transistor 2sc2001
Text: SEC NPN SILICON TRANSISTOR ELECTRON DEVICE DESCR IPTIO N 2SC2001 The 2SC2001 is designed fo r use in o u tp u t stage o f portable PAC KAG E D IM E N S IO N S R A D IO and cassette type tape recorder, general purpose applica in m illim e te rs inches tions.
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2SC2001
2SC2001
tl700
transistor 2sc2001
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Untitled
Abstract: No abstract text available
Text: MCC TO-92 Plastic-Encapsutate Transistors X 1 2SC2001 TRANSISTOR NPN FEATU RES Power dissipation TO-92 Pcm: 0.6W (Tamb=25°C) Collector current 1 .E M I T T E R Icm: 2 .C O L L E C T O R 0 .7 A Collector-base voltage V(BR)C80: 30 V 3 .B A S E Operating and storage junction temperature range
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2SC2001
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