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    TRANSISTOR 2SC2603 Search Results

    TRANSISTOR 2SC2603 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR 2SC2603 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    marking CODE n3 6PIN

    Abstract: MOSFET TRANSISTOR SMD MARKING CODE nh INK0001AC RT8H 2SA798 equivalent 2SC2259 marking code NJ SMD Transistor MC931 diode smd transistor marking A7 p7 transistor smd marking ka p7
    Text: 2010年3月版 Sales Guide セールスガイド 小信号トランジスタダイオード/リニアIC Small Signal TransistorDiodes / Linear IC 目次 INDEX 形名について The Type Name of the Transistor ・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・ 2


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    2SA1235 marking CODE n3 6PIN MOSFET TRANSISTOR SMD MARKING CODE nh INK0001AC RT8H 2SA798 equivalent 2SC2259 marking code NJ SMD Transistor MC931 diode smd transistor marking A7 p7 transistor smd marking ka p7 PDF

    Q2N4401

    Abstract: D1N3940 Q2N2907A D1N1190 Q2SC1815 Q2N3055 Q2N1132 D1N750 D02CZ10 D1N751
    Text: Analog Parts Index Digital Mixed-Signal Device Type Index Click on a device type to jump to its page Actuator Fluid Level Detector Operational Amplifier Small-Signal Mosfet Amplifier/Equilizer Ground Fault Interrupter Opto-Isolator Switch Mulitplier Analog


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    RD91EB Q2N4401 D1N3940 Q2N2907A D1N1190 Q2SC1815 Q2N3055 Q2N1132 D1N750 D02CZ10 D1N751 PDF

    k2645

    Abstract: k4005 U664B mosfet k4005 MB8719 transistor mosfet k4004 SN16880N stk5392 STR451 BC417
    Text: 1 BHIAB Electronics Du som söker besvärliga IC & transistorer, börja Ditt sökande hos oss – vi har fler typer på lager än man rimlingen kan begära av ett företag Denna utgåva visar lagerartiklar men tyvärr saknas priser och viss information Men uppdatering sker kontinuerligt


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    MK135 MK136 MK137 MK138 MK139 MK140 Mk142 MK145 MK155 157kr k2645 k4005 U664B mosfet k4005 MB8719 transistor mosfet k4004 SN16880N stk5392 STR451 BC417 PDF

    TGS 2610

    Abstract: gas sensor TGS 825 78M05 mitsubishi UL2075 sensor tgs 2610 LPM-2610 Diode 1S1588 TGS2610 application note sensor figaro tgs 2610 LPM2610
    Text: APPLICATION NOTES FOR TGS2610 an ISO9001 company Application Notes for LP Gas Detectors using TGS2610 The TGS2610 LP gas sensor has been presorted into groupings which will allow users to simplify the manufacturing process for LP gas detectors. This brochure


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    TGS2610 ISO9001 TGS2610 TGS 2610 gas sensor TGS 825 78M05 mitsubishi UL2075 sensor tgs 2610 LPM-2610 Diode 1S1588 TGS2610 application note sensor figaro tgs 2610 LPM2610 PDF

    STk442-130

    Abstract: M56730ASP PAC011A PAC010A UPC2581 PAL005A stk413-020a upc2581v ecg semiconductors master replacement guide STRS5717
    Text: C52_pg_337~347 8/16/07 11:47 AM Page 337 Semiconductors/ Components SEMICONDUCTORS MCM has an extensive selection of SMD Surface Mount Devices which are denoted on the following page with an *(asterisk)! COUNT ON MCM TO ALWAYS PROVIDE. section 16 Semiconductors/Components


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    100-up) STk442-130 M56730ASP PAC011A PAC010A UPC2581 PAL005A stk413-020a upc2581v ecg semiconductors master replacement guide STRS5717 PDF

    TRANSISTOR DATASHEET D1555

    Abstract: d1555 transistor TRANSISTOR D1651 D1555 D1557 D1554 d1651 transistor s1854 transistor d1555 transistor d1878
    Text: 型号 2N109 2N1304 2N1305 2N1307 2N1613 2N1711 2N1893 2N2102 2N2148 2N2165 2N2166 2N2219A 2N2222A 2N2223 2N2223A 2N2243A 2N2369A 2N2857 2N2894 2N2905A 2N2906A 2N2907A 2N2917 2N2926 2N2955 2N3019 2N3053 2N3054 2N3055 2N3055 2N3055H 2N3251 2N3375 2N3439 2N3440


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    2N109 2N1304 2N1305 2N1307 2N1613 2N1711 2N1893 2N2102 2N2148 2N2165 TRANSISTOR DATASHEET D1555 d1555 transistor TRANSISTOR D1651 D1555 D1557 D1554 d1651 transistor s1854 transistor d1555 transistor d1878 PDF

    2SC2603

    Abstract: 2SC2603 F 2SC2603 G 2SC2603 E sv micro 200EA
    Text: 2SC2603 SILICON TRANSISTOR TO-92B 2SC2603 is NPN silicen planar transistor designed for low power general purpose amplifiers. ABSOLUTE MAXIMUM RATINGS Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Total Power Dissipation


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    2SC2603 2SC2603 O-92B 200EA 300mW VCB-50V 100mA -10mA1 300us, Box69477, 2SC2603 F 2SC2603 G 2SC2603 E sv micro PDF

    2SC2603

    Abstract: 2SC2603 F 2SC2603 E transistor 2sc2603 2SC2603 G cl 100 hie hre hfe
    Text: MITSUBISHI SEMICONDUCTOR {SMALL-SIGNAL TRANSISTOR 2SC2603 FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE DESCRIPTION Mitsubishi 2SC2603 is a silicon NPN epitaxial type transistor designed for low OUTLINE DRAWING 4.3M A X frequency voltage amplify application. Small package for easy mounting.


    OCR Scan
    2SC2603 2SC2603 100mA f-270Hz 270Hz 2SC2603 F 2SC2603 E transistor 2sc2603 2SC2603 G cl 100 hie hre hfe PDF

    y51 h 120c

    Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711
    Text: Towers' International Transistor Selector ! o Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U pdate Three London: NEW YORK


    OCR Scan
    500MA 500MA 240MWF 240MWF y51 h 120c bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711 PDF

    2SC2603

    Abstract: 2SC2603 E 2SC2603 F
    Text: TO-92B 2SC2603 is NPN silicon planar transistor designed for low power general purpose amplifiers. ABSOLUTE MAXIMUM RATINGS Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Total Power Dissipation Operating Junction & Storage Temperature


    OCR Scan
    2SC2603 O-92B 300mW VCB-50V 0-50V 100mA Box69477, 430l81-6 34i93363 2SC2603 E 2SC2603 F PDF

    Untitled

    Abstract: No abstract text available
    Text: TO-92B 2SC2603 is NPN silicen planar transistor purpose designed for low powei • general amplifiers. ABSOLUTE MAXIMUM RATINGS ECB Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Total Power Dissipation Operating Junction & Storage Temperature


    OCR Scan
    2SC2603 O-92B 200mA 300mK VCB-50V 100mA -10mA1 1C--10mA 300us, ox69477, PDF

    RTIP144C

    Abstract: RTIN141C RTIN141S 2SD947 equivalent 2SD612K equivalent of transistor 2SA1115 RTIN241C rtip241 2sd880 equivalent RTIN140C
    Text: m&ttm -urn h "7 > v X £ /T ra n sisto rs ddp h 7> y of Transistor Equivalent Products S M t r o iS H li, L T 2 fiJffl< t £ £ i \ LT IS * * * ' 6 S & It should be borne in mind that following listings are made according to the transistors’ maximum ratings.


    OCR Scan
    2SB1186 2SB1186A 2SA1304 2SA1306 2SA1305 2SB1274 2SB1015 2SB1133 2SB1287 2SB1185 RTIP144C RTIN141C RTIN141S 2SD947 equivalent 2SD612K equivalent of transistor 2SA1115 RTIN241C rtip241 2sd880 equivalent RTIN140C PDF

    m5201

    Abstract: M5218 equivalent M5201L mitsubishi m5201 MS201 m5201 dip 8 M5201P MS201L m5201 similar MS218
    Text: r n ^ Q S 'i o MITSUBISHI <LINEAR ICs> M 5201L, P, FP GENERAL PURPOSE SWITCHING OPERATIONAL AMPLIFIER DUAL INPUT, SINGLE OUTPUT TYPE MITSUBISHI ELEK (LINEAR) S3E T> DESCRIPTION The M5201 is a semiconductor integrated circuit designed for an operational amplifier which adopts analog switch func­


    OCR Scan
    M5201 M5203 A20//A M5218 equivalent M5201L mitsubishi m5201 MS201 m5201 dip 8 M5201P MS201L m5201 similar MS218 PDF

    aeg diode Si 61 L

    Abstract: aeg diodes D6 SGS Transistors BC23B SILICONIX U315 MZ306 BY126 bcv59 ac128 2N3680
    Text: Semiconductor Data Book Semiconductor Data Book Characteristics of approx. 10 000 Transistors, FETs, UJTs, Diodes, Rectifiers, Optical Semiconductors, Triacs and SCRs, Compiled by A. M. Ball Head of Physics, Teign School Newnes Technical Books Newnes Technical Books


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    11tA0A12 A025A A0290 U0U55 A0291 A0292 A0305 A0306 A0A56 A0A59 aeg diode Si 61 L aeg diodes D6 SGS Transistors BC23B SILICONIX U315 MZ306 BY126 bcv59 ac128 2N3680 PDF