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    TRANSISTOR 2SC3052 Search Results

    TRANSISTOR 2SC3052 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR 2SC3052 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2SA1235A

    Abstract: RT3WLMM 100HZ 2SC3052
    Text: PRELIMINARY RT3WLMM Composite Transistor For Low Frequency Amplify Application Silicon Epitaxial Type OUTLINE DRAWING DESCRIPTION RT3WLMM is a composite transistor built with Unit：mm 2.1 2SC3052 chip and 2SA1235A chip in SC-88 package. 2.0 Each transistor elements are independent.


    Original     		PDF 2SC3052 2SA1235A SC-88 JEITASC-88 RT3WLMM 100HZ

    2SC3052

    Abstract: RT3CLLM
    Text: PRELIMINARY RT3CLLM Compound Transistor For Low Frequency Amplify Application Silicon Npn Epitaxial Type OUTLINE DRAWING DESCRIPTION RT3CLLM is a compound transistor built with two Unit：mm 2.1 2SC3052 chips in SC-88 package. 2.0 Each transistor elements are independent.


    Original     		PDF 2SC3052 SC-88 JEITASC-88 RT3CLLM

    2SC3052

    Abstract: RT2C00M
    Text: RT2C00M COMPOSITE TRANSISTOR FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE OUTLINE DRAWING DESCRIPTION Unit:mm RT2C00M is a composite transistor built with two 2SC3052 chips in SC-88 package. FEATURE ●Silicon npn epitaxial type Each transistor elements are independent.


    Original     		PDF RT2C00M RT2C00M 2SC3052 SC-88 25Tr1Tr2

    2SC3052

    Abstract: RT2C00M
    Text: RT2C00M COMPOSITE TRANSISTOR FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE OUTLINE DRAWING DESCRIPTION Unit:mm 2.1 SC-88 package. 1.25 0.2 RT2C00M is a composite transistor built with two 2SC3052 chips in FEATURE ① 0.65 ⑤ 2.0 Each transistor elements are independent.


    Original     		PDF RT2C00M SC-88 RT2C00M 2SC3052

    RT3WLMM

    Abstract: 2SA1235A 100HZ 2SC3052
    Text: PRELIMINARY RT3WLMM Composite Transistor For Low Frequency Amplify Application Silicon Epitaxial Type DESCRIPTION OUTLINE DRAWING Unit：mm RT3WLMM is compound transistor built with 2SC3052 chip and 2SA1235A chip in SC-88 package. FEATURE Silicon epitaxial type


    Original     		PDF 2SC3052 2SA1235A SC-88 JEITASC-88 RT3WLMM 100HZ 2SC3052

    2SC3052

    Abstract: transistor 2sc3052 2sc3052 if
    Text: 〈SMALL-SIGNAL TRANSISTOR〉 2SC3052 FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE mini type DESCRIPTION OUTLINE DRAWING Unit：ｍｍ 2SC3052 is a mini package resin sealed silicon NPN epitaxial transistor, It is designed for low frequency voltage application.


    Original     		PDF 2SC3052 2SC3052 100mA JEITASC-59 O-236 transistor 2sc3052 2sc3052 if

    2SC3052

    Abstract: No abstract text available
    Text: RECTRON 2SC3052 SEMICONDUCTOR TECHNICAL SPECIFICATION SOT-23 BIPOLAR TRANSISTORS TRANSISTOR NPN FEATURES * Power dissipation PCM : 0.15 W (Tamb=25OC) * Collector current ICM : 0.2 A * Collector-base voltage V(BR)CBO : 50 V * Operating and storage junction temperature range


    Original     		PDF 2SC3052 OT-23 OT-23 MIL-STD-202E 2SC3052

    2sc3052

    Abstract: 2SC3052F 2SC3052E 2SC3052-F 2SC3052G transistor 2sc3052 MARKING lf npn transistor marking LF marking LE 2SC3052-E
    Text: 2SC3052 0.2A , 50V NPN Plastic-Encapsulate Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free SOT-23 FEATURE A Excellent linearity of DC forward current gain. Low collector to emitter saturation voltage


    Original     		PDF 2SC3052 OT-23 100mA, 2SC3052-E 2SC3052-F 2SC3052-G 2sc3052 2SC3052F 2SC3052E 2SC3052-F 2SC3052G transistor 2sc3052 MARKING lf npn transistor marking LF marking LE 2SC3052-E

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors SOT-23 2SC3052 TRANSISTOR NPN FEATURES 1. BASE z z 2. EMITTER Low collector to emitter saturation voltage VCE(sat)=0.3V max(@IC=100mA,IB=10mA) Excellent linearity of DC forward current gain


    Original     		PDF OT-23 OT-23 2SC3052 100mA 100mA,

    sot-23 Marking Lf

    Abstract: transistor marking LF sot-23 sot-23 Marking LG marking NF sot-23 transistor marking LF SOT-23 lf
    Text: 2SC3052 SOT-23 Transistor NPN SOT-23 1. BASE 2. EMITTER 3. COLLECTOR Features — — Low collector to emitter saturation voltage VCE(sat)=0.3V max(@IC=100mA,IB=10mA) Excellent linearity of DC forward current gain MAXIMUM RATINGS (TA=25℃ unless otherwise noted)


    Original     		PDF OT-23 2SC3052 OT-23 100mA 100mA, sot-23 Marking Lf transistor marking LF sot-23 sot-23 Marking LG marking NF sot-23 transistor marking LF SOT-23 lf

    2sc3052

    Abstract: sot-23 Marking LG
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors SOT-23 2SC3052 TRANSISTOR NPN FEATURES 1. BASE z z 2. EMITTER Low collector to emitter saturation voltage VCE(sat)=0.3V max(@IC=100mA,IB=10mA) Excellent linearity of DC forward current gain


    Original     		PDF OT-23 OT-23 2SC3052 100mA 100mA, 2sc3052 sot-23 Marking LG

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors SOT—23 2SC3052 TRANSISTOR（NPN ） 1. BASE 2. EMITTER 3. COLLECTOR １．０ FEATURES Power dissipation PCM : 0.15 W（Tamb=25℃） Collector current ICM: 0.2 A Collector-base voltage


    Original     		PDF OT-23 2SC3052 037TPY 950TPY 550REF 022REF

    sot-23 Marking Lf

    Abstract: sot-23 Marking LG 2sc3052 MARKING LG
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors SOT-23 2SC3052 TRANSISTOR NPN 1. BASE 2. EMITTER 3. COLLECTOR 1. 0 FEATURES Power dissipation 2. 4 1. 3 W (Tamb=25℃) TJ, Tstg: -55℃ to +150℃ ELECTRICAL CHARACTERISTICS (Tamb=25℃


    Original     		PDF OT-23 OT-23 2SC3052 100mA, sot-23 Marking Lf sot-23 Marking LG 2sc3052 MARKING LG

    2sc3052

    Abstract: sot-23 Marking Lf
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23-3L Plastic-Encapsulate Transistors 2SC3052 TRANSISTOR NPN SOT-23-3L 1. BASE FEATURES 2. EMITTER 3. COLLECTOR 0.15 W (Tamb=25℃) 2. 80¡ À0. 05 0. 95¡ À0. 025 Collector current 0.2 A ICM: Collector-base voltage


    Original     		PDF OT-23-3L 2SC3052 OT-23-3L 100mA, 2sc3052 sot-23 Marking Lf

    lg smd transistor LF

    Abstract: lg smd transistor transistor smd marking LE 2sc3052 if marking LE smd transistor MARKING lg 2sc3052 smd transistor marking LF
    Text: Transistors SMD Type NPN Transistor 2SC3052 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 0.4 3 1 Power dissipation :PC=0.15W 0.55 Collector current :IC=0.2A +0.1 1.3-0.1 +0.1 2.4-0.1 Features 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1 0.38-0.1 +0.1 0.97-0.1 +0.05


    Original     		PDF 2SC3052 OT-23 100mA lg smd transistor LF lg smd transistor transistor smd marking LE 2sc3052 if marking LE smd transistor MARKING lg 2sc3052 smd transistor marking LF

    2sc3052

    Abstract: MARKING lf npn
    Text: 2SC3052 2SC3052 TRANSISTOR NPN SOT-23-3L 1. BASE FEATURES 2. EMITTER 3. COLLECTOR 0.15 W (Tamb=25℃) 2. 80¡ À0. 05 0. 95¡ À0. 025 Collector current ICM: 0.2 A Collector-base voltage 50 V V(BR)CBO: Operating and storage junction temperature range 0. 35


    Original     		PDF 2SC3052 OT-23-3L 100mA, 2sc3052 MARKING lf npn

    Untitled

    Abstract: No abstract text available
    Text: SOT-23-3L Plastic-Encapsulate Transistors 2SC3052 TRANSISTOR NPN SOT-23-3L 1. BASE FEATURES 2. EMITTER 3. COLLECTOR 0.15 W (Tamb=25℃) 2. 80¡ À0. 05 0. 95¡ À0. 025 Collector current 0.2 A ICM: Collector-base voltage 50 V V(BR)CBO: Operating and storage junction temperature range


    Original     		PDF OT-23-3L 2SC3052 OT-23-3L 100mA,

    marking CODE n3 6PIN

    Abstract: MOSFET TRANSISTOR SMD MARKING CODE nh INK0001AC RT8H 2SA798 equivalent 2SC2259 marking code NJ SMD Transistor MC931 diode smd transistor marking A7 p7 transistor smd marking ka p7
    Text: ２０１０年３月版 Sales Guide セールスガイド 小信号トランジスタダイオード/リニアIC Small Signal TransistorＤiodes / Linear IC 目次 INDEX 形名について The Type Name of the Transistor ･･･････････････････････････････ 2


    Original     		PDF 2SA1235 marking CODE n3 6PIN MOSFET TRANSISTOR SMD MARKING CODE nh INK0001AC RT8H 2SA798 equivalent 2SC2259 marking code NJ SMD Transistor MC931 diode smd transistor marking A7 p7 transistor smd marking ka p7

    2SC5804

    Abstract: isahaya 2SC3052 ISC5804AT2 NPN transistor 1211
    Text: 〈Transistor〉 ISC5804AT2 Low frequency Application Silicon NPN Epitaxial Type DESCRIPTION OUTLINE 2SC5804 is a super mini package resin sealed DRAWING Unit：ｍｍ silicon NPN epitaxial transistor, It is designed for low frequency application. 1.21±0.1


    Original     		PDF ISC5804AT2 2SC5804 2SC3052. 100mA/IB isahaya 2SC3052 ISC5804AT2 NPN transistor 1211

    2SC5804

    Abstract: TRANSISTOR 2sc5804 2SC3052
    Text: 〈SMALL-SIGNAL TRANSISTOR〉 2SC5804 PRELIMINARY Notics:This is not a final specification. Some parametric limits are subject to change. FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE DESCRIPTION OUTLINE DRAWING Unit：ｍｍ 2SC5804 is a super mini package resin sealed


    Original     		PDF 2SC5804 2SC5804 2SC3052. TRANSISTOR 2sc5804 2SC3052

    Q2N4401

    Abstract: D1N3940 Q2N2907A D1N1190 Q2SC1815 Q2N3055 Q2N1132 D1N750 D02CZ10 D1N751
    Text: Analog Parts Index Digital Mixed-Signal Device Type Index Click on a device type to jump to its page Actuator Fluid Level Detector Operational Amplifier Small-Signal Mosfet Amplifier/Equilizer Ground Fault Interrupter Opto-Isolator Switch Mulitplier Analog


    Original     		PDF RD91EB Q2N4401 D1N3940 Q2N2907A D1N1190 Q2SC1815 Q2N3055 Q2N1132 D1N750 D02CZ10 D1N751

    2sc3052

    Abstract: MARKING HRA MARKING XL
    Text: MITSUBISHI SEMICONDUCTOR SMALL-SIGNAL TRANSISTOR 2SC3052 FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE DESCRIPTION Mitsubishi 2SC3052 is a super mini silicon PNP epitaxial type transistor OUTLINE DRAWING designed for low frequency voltage amplify application.


    OCR Scan     		PDF 2SC3052 2SC3052 100mA, 270Hz MARKING HRA MARKING XL

    RTIP144C

    Abstract: RTIN141C RTIN141S 2SD947 equivalent 2SD612K equivalent of transistor 2SA1115 RTIN241C rtip241 2sd880 equivalent RTIN140C
    Text: m&ttm -urn h "7 > v X £ /T ra n sisto rs ddp h 7> y of Transistor Equivalent Products S M t r o iS H li, L T 2 fiJffl< t £ £ i \ LT IS * * * ' 6 S & It should be borne in mind that following listings are made according to the transistors’ maximum ratings.


    OCR Scan     		PDF 2SB1186 2SB1186A 2SA1304 2SA1306 2SA1305 2SB1274 2SB1015 2SB1133 2SB1287 2SB1185 RTIP144C RTIN141C RTIN141S 2SD947 equivalent 2SD612K equivalent of transistor 2SA1115 RTIN241C rtip241 2sd880 equivalent RTIN140C

    2SC3928A

    Abstract: Transistor lss 2SC3728 2SC4357 2sc5211 8E sot-89 2SA1369 2SC5209 2sA1989
    Text: # High-Density mounting equipments Continued Max. ratings Type Mo. Application Sinicftff* Vo» ¥<»o LPA 2SA1948 LVA 2SA1989 * ★ LVA 2SC3052 LVA 2SC3053 FM.RF.CON IF Si.PNP.E -25 — 120 -120 Si.PNP.E -50 -50 50 Si.NPN.E Si.NPN.E 30 50 -4 -5 -6 - 1A -100


    OCR Scan     		PDF