MN1280
Abstract: KGT50N60kda bc547 smd transistor kia1117af transistor smd zG y6 smd transistor MB4213 y4 smd transistor smd transistor zaa KGT25N120NDA
Text: Table of Contents SMD THD ▣ Table of Contents 2 ▣ Bipolar Junction Transistor 4 Transistor Line-up PNP Transistor Transistor Line-up (NPN Transistor) Small Signal General Purpose Transistor Current Regulating Device Small Signal Low Noise Transistor
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oz960
Abstract: khb*9D5N20P MB4213 KIA78*pI MN1280 F10P048 KIA7812A MJE13007 mb4213 equivalent TRANSISTOR SMD N2 3j
Text: Table of Contents Index 4 SMD ✞✟ Bipolar Junction Transistors Transistor Line-up PNP Transistor Transistor Line-up (NPN Transistor) Small Signal General Purpose Transistors Small Signal Low Noise Transistors Small Signal Audio Muting Transistors Small Signal High hFE Transistors
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KIA7900PI
TC7SH04FU
KIC7SH04FU
SC604*
KAC3301QN
M51943
KIA7042AP/AF
TC7SH08FU
KIC7SH08FU
LT1937
oz960
khb*9D5N20P
MB4213
KIA78*pI
MN1280
F10P048
KIA7812A
MJE13007
mb4213 equivalent
TRANSISTOR SMD N2 3j
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2SC3866
Abstract: No abstract text available
Text: Product Specification www.jmnic.com 2SC3866 Silicon NPN Power Transistor DESCRIPTION ・High Breakdown Voltage: V BR CBO= 900V(Min) ・High Switching Speed ・High Reliability APPLICATIONS ・Switching regulators ・Ultrasonic generators ・High frequency inverters
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2SC3866
2SC3866
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2SC3862
Abstract: 2SC3120
Text: 2SC3862 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC3862 TV Tuner, UHF Mixer Applications VHF~UHF Band RF Amplifier Applications • Unit: mm Exchange of emitter for base in 2SC3120 Maximum Ratings Ta = 25°C Characteristics Symbol Rating Unit
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2SC3862
2SC3120
2SC3862
2SC3120
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2SC3120
Abstract: 2SC3862
Text: 2SC3862 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC3862 TV Tuner, UHF Mixer Applications VHF~UHF Band RF Amplifier Applications • Unit: mm Exchange of emitter for base in 2SC3120 Absolute Maximum Ratings Ta = 25°C Characteristics Symbol Rating
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2SC3862
2SC3120
2SC3120
2SC3862
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2SC3863
Abstract: FC144
Text: Ordering number:EN3479 FC144 NPN Epitaxial Planar Silicon Composite Transistor Switching Applications with Bias Resistance Applications Package Dimensions • Switching circuits, inverter circuits, interface circuits, driver circuits. unit:mm 2066 [FC144]
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EN3479
FC144
FC144]
FC144
2SC3863,
2SC3863
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Untitled
Abstract: No abstract text available
Text: 2SC3863 Transistors Pre-Biased "Digital" Transistor No. of Units Per Package1 V BR CEO (V)50 V(BR)CBO (V)50 I(C) Max. (A)100m Absolute Max. Power Diss. (W)200m I(CBO) Max. (A)100n @V(CBO) (V) (Test Condition)40 h(FE) Min. Current gain.50 h(FE) Max. Current gain.
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2SC3863
Freq250M
resistor10k
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2SC3866 transistor
Abstract: 2SC3866 2sc3866 power transistor 22sc3866 *c3866
Text: 2SC3866 FUJI POWER TRANSISTOR TRIPLE DIFFUSED PLANER TYPE HIGH VOLTAGE,HIGH SPEED SWITCHING NPN三重拡散プレーナ形 高耐圧高速スイッチング用 外形寸法 : Outline Drawings 外形寸法: TO-220F17 特長 :Features 特長: 高耐圧、
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2SC3866
O-220F17
SC-67
400mA
-800mA,
2SC3866 transistor
2SC3866
2sc3866 power transistor
22sc3866
*c3866
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2SC3865
Abstract: transistor 313
Text: 2SC3865 FUJI POWER TRANSISTOR TRIPLE DIFFUSED PLANER TYPE HIGH VOLTAGE,HIGH SPEED SWITCHING NPN三重拡散プレーナ形 高耐圧高速スイッチング用 外形寸法 : Outline Drawings 外形寸法: TO-220F17 特長 :Features 特長: 高耐圧、
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2SC3865
O-220F17
SC-67
2SC3865
transistor 313
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THINKI transistor catalog
Abstract: audio amplifier ic bd249c catalog AUDIO HIGH POWER AMPLIFIER 3DD301 2sc3229 2SA747
Text: THINKI TRANSISTOR CATALOG Power Transistors For Audio Power Amplifier PC IC Vceo W (A) (V) Model Vcbo Vebo (V) (V) Vce(sat) hFE fT (V) VCE(V) IC(A) max IC(A) (MHz) Package Function TYP IB(A) 1 -0.05 -150 2SA914 -150 -5 90-450 -5 -0.01 -1 -0.03 -0.003
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2SA914
O-126
2SA900
2SC2556
2SC2556A
LM317K
O-220
LM317T
THINKI transistor catalog
audio amplifier ic
bd249c catalog
AUDIO HIGH POWER AMPLIFIER
3DD301
2sc3229
2SA747
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y51 h 120c
Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711
Text: Towers' International Transistor Selector ! o Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U pdate Three London: NEW YORK
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500MA
500MA
240MWF
240MWF
y51 h 120c
bd124
KT368
BFQ59
Silec Semiconductors
BD214
al103
AFY18
bd192
MM1711
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Transistor 2SA 2SB 2SC 2SD
Abstract: 993 395 pnp npn transistor 2SA 101 TRANSISTOR 2SC 635 transistor 2Sb 474 transistor 2SC458 transistor 2sc2512 transistor 2sk 168 transistor 2SD 1153 3SK228
Text: Index Bipolar Transistor PNP, High Frequency Use 2SA Type 2SA673 . 81 2SA 673A . 81
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2SA673
2SA778
BB101C
BB301M
BB301C
Transistor 2SA 2SB 2SC 2SD
993 395 pnp npn
transistor 2SA 101
TRANSISTOR 2SC 635
transistor 2Sb 474
transistor 2SC458
transistor 2sc2512
transistor 2sk 168
transistor 2SD 1153
3SK228
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2SK2752
Abstract: 2sk1326 3SK234 2SK431 3SK238 3SK229 3SK197 2SK1479 1535M 2SK190
Text: SMALL SIGNAL TRANSISTOR •High frequency amplifier Package code Type No. CMPAK 2SC4903 2SC4906 2SC4965 2SC4967 2SC5051 CMPAK-4 2SC4994 2SC4995 2SC5079 2SC5081 MPAK 2SC2619 2SC2620 2SC2732 2SCZ733 2SC2734 2SC2735 2SC2736 2SC2776 2SC3127 2SC3513 2SC3793 2SC3867
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2SC46
2SK1070
2SK1326
2SK1479
2SK2752*
2SK2752
3SK234
2SK431
3SK238
3SK229
3SK197
1535M
2SK190
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Untitled
Abstract: No abstract text available
Text: TO SH IB A 2SC3862 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC3862 TV TUNER, UHF MIXER APPLICATIONS VHF—UHF BAND RF AMPLIFIER APPLICATIONS • Exchange of Emitter for Base in 2SC3120 MAXIMUM RATINGS Ta = 25°C CHARACTERISTIC Collector-Base Voltage
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2SC3862
2SC3120
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2SC3120
Abstract: 2SC3862
Text: TOSHIBA 2SC3862 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC3862 Unit in mm TV TUNER, UHF MIXER APPLICATIONS. V H F-U H F BAND RF AMPLIFIER APPLICATIONS. • Exchange of Emitter for Base in 2SC3120 e: EEMAXIMUM RATINGS Ta = 25°C CHARACTERISTIC
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2SC3862
2SC3120
fRF-800MHz
830MHz
2SC3120
2SC3862
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Untitled
Abstract: No abstract text available
Text: TOSHIBA 2SC3862 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC3862 TV TUNER, UHF MIXER APPLICATIONS. VH F-U HF BAND RF AMPLIFIER APPLICATIONS. Exchange of Emitter for Base in 2SC3120 MAXIMUM RATINGS Ta = 25°C u HA k ACt .u k IS t IC Collector-Base Voltage
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2SC3862
2SC3120
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2SC3120
Abstract: 2SC3862 C1402
Text: TO SH IBA 2SC3862 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC3862 Unit in mm TV TUNER, UHF MIXER APPLICATIONS VH F-U H F BAND RF AMPLIFIER APPLICATIONS + 0.5 2.5-0.3 • Exchange of Emitter for Base in 2SC3120 + 0.25 1.5-0.11 MAXIMUM RATINGS Ta = 25°C
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2SC3862
2SC3120
2SC3862
C1402
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Transistor 2SA 2SB 2SC 2SD
Abstract: 2SK596 2SC906 2SA1281 bup 3130 C3885A 2sd103 2SA1379 34d 937 086 bfq59
Text: cD/ transistor 2 0-u datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-01-9 Dieses Buch ist hinterlegt und urheberrechtlich geschutzt. Alle
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2sc2240 equivalent
Abstract: 2sc1815 equivalent 2sc3112 equivalent 2sa1015 equivalent 2sc2120 equivalent 2sc2458 equivalent 2Sc1959 equivalent 2SC1627 equivalent 2sc2878 equivalent 2SA1091 equivalent
Text: Surface Mount Devices 1 Super-Mini Transistors (SOT-23MOD.) Electrical Characteristics (Ta=25’ C) Application Type No. le (mA) PC (mW) TJ rc ) Mark Complementary Remarks (TO-92 Mini-transistor) Equivalent TO-92 Type No. 2SA1162 Low-frequency oompllflcation
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OT-23MOD.
2SC2712
2SA1162
2SC2713
2SA1163
2SC2859
2SA1182
2SC3138
2SA1255
2SC3265
2sc2240 equivalent
2sc1815 equivalent
2sc3112 equivalent
2sa1015 equivalent
2sc2120 equivalent
2sc2458 equivalent
2Sc1959 equivalent
2SC1627 equivalent
2sc2878 equivalent
2SA1091 equivalent
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Untitled
Abstract: No abstract text available
Text: Ordering number : EN3479 FC144 No.3479 NPN Epitaxial Planar Silicon Composite Transistor Switching Applications with Bias Resistance A p p licatio n s • Switching circuits, inverter circuits, interface circuits, driver circuits. F e a tu re s • On-chip bias resistances R1 = 2.2kfi, R2 = lOkO
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EN3479
FC144
FC144
2SC3863,
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2SC5146
Abstract: TRANSISTOR 2SA 2SK type Transistor 2SD 2SC2545, 2SC2546 2SC2547 2sb darlington 2sb647 2sd667 2sc458lg 2SC2546 2sb74
Text: Product Profiles Bipolar PNP Transistor 2SA type Electrical characteristics Test Maximum ratings ^CEO Package SPAK TO-92 Type No, (V) 'c Pc (mA) (W) ^FE Test condition V_ condition vŒ (V) <c (mA) (sat) Cob 'C (mA) (mA) (pF) *T (MHz) Others 200 - (V) 2SA1337
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2SA1337
2SA1350
2SA1374
2SA1390
2SA673
2SA673A
2SC5146
TRANSISTOR 2SA
2SK type
Transistor 2SD
2SC2545, 2SC2546 2SC2547
2sb darlington
2sb647 2sd667
2sc458lg
2SC2546
2sb74
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Untitled
Abstract: No abstract text available
Text: SILICON NPN EPITAXIAL PLANAR TYPE TRANSISTOR U nit in mm TV TUNER, UHF MIXER APPLICATIONS. VHF— UHF BAND RF AMPLIFIER APPLICATIONS. .Z 5 11 - c^ *00.11 • Exchange of Em itter for Base in 2SC3120 EE • d 3 EE M A X IM U M RATINGS Ta = 25°C CHARACTERISTIC
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2SC3120
2SC3862
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Untitled
Abstract: No abstract text available
Text: MOLD TYPE BIPOLAR TRANSISTORS Ratings and Specifications Q High voltage high speed switching transistors • T h e transistor is best suited fo r use w ith 240V AC inp u t sw itching regulators. • Can o p e rate w ith in th e 30kHz range Dcvice lypo V cB O
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30kHz
7SC3505
2SD7734
2SD2047
2SC3866
2SC3549
2SC4603
SC35b1
2SC4419
2SC3030
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RTIP144C
Abstract: RTIN141C RTIN141S 2SD947 equivalent 2SD612K equivalent of transistor 2SA1115 RTIN241C rtip241 2sd880 equivalent RTIN140C
Text: m&ttm -urn h "7 > v X £ /T ra n sisto rs ddp h 7> y of Transistor Equivalent Products S M t r o iS H li, L T 2 fiJffl< t £ £ i \ LT IS * * * ' 6 S & It should be borne in mind that following listings are made according to the transistors’ maximum ratings.
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2SB1186
2SB1186A
2SA1304
2SA1306
2SA1305
2SB1274
2SB1015
2SB1133
2SB1287
2SB1185
RTIP144C
RTIN141C
RTIN141S
2SD947 equivalent
2SD612K
equivalent of transistor 2SA1115
RTIN241C
rtip241
2sd880 equivalent
RTIN140C
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