2SC5376F
Abstract: HN7G10FE SSM3K03FE 2sC537
Text: HN7G10FE TOSHIBA Multichip Discrete Device HN7G10FE Power Management Switch Applications Driver Circuit Applications Unit: mm Interface Circuit Applications • Q1 transistor : 2SC5376F equivalent • Q2 (MOSFET): SSM3K03FE equivalent Q1 (transistor) Maximum Ratings (Ta = 25°C)
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HN7G10FE
2SC5376F
SSM3K03FE
HN7G10FE
2sC537
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Untitled
Abstract: No abstract text available
Text: HN7G10FE TOSHIBA Multichip Discrete Device HN7G10FE Power Management Switch Applications Driver Circuit Applications Interface Circuit Applications • Q1 transistor : 2SC5376F equivalent • Q2 (MOSFET): SSM3K03FE equivalent Unit: mm Q1 (transistor) Absolute Maximum Ratings (Ta = 25°C)
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HN7G10FE
2SC5376F
SSM3K03FE
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SE012
Abstract: SE090 SE140N SE115N diode 2SC5487 sta474a 8050e SE110N SLA-7611
Text: Index by Part Number Part No. Type 2SA1186 Transistor Complementary (LAPT for Audio Output/General Purpose) 2SA1215 Transistor (Complementary (LAPT) for Audio Output/General Purpose) 2SA1216 Transistor (Complementary (LAPT) for Audio Output/General Purpose)
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2SA1186
2SA1215
2SA1216
2SA1262
2SA1294
2SA1295
2SA1303
2SA1386
2SA1386A
2SA1488
SE012
SE090
SE140N
SE115N
diode
2SC5487
sta474a
8050e
SE110N
SLA-7611
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Untitled
Abstract: No abstract text available
Text: HN7G10FE TOSHIBA Multichip Discrete Device HN7G10FE Power Management Switch Applications Driver Circuit Applications Interface Circuit Applications • Q1 transistor : 2SC5376F equivalent • Q2 (MOSFET): SSM3K03FE equivalent Unit: mm Q1 (transistor) Absolute Maximum Ratings (Ta = 25°C)
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HN7G10FE
2SC5376F
SSM3K03FE
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Varistor RU
Abstract: SE110N transistor 2SC5487 2SA2003 SE090N high voltage transistor SE090 RBV-406 2SC5586
Text: Index by Part Number Part No. Type 2SA1186 Transistor Complementary (LAPT for Audio Output/General Purpose) 2SA1215 Transistor (Complementary (LAPT) for Audio Output/General Purpose) 2SA1216 Transistor (Complementary (LAPT) for Audio Output/General Purpose)
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2SA1186
2SA1215
2SA1216
2SA1262
2SA1294
2SA1295
2SA1303
2SA1386
2SA1386A
2SA1488
Varistor RU
SE110N
transistor
2SC5487
2SA2003
SE090N
high voltage transistor
SE090
RBV-406
2SC5586
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2SC5586
Abstract: transistor 2SC5586 diode RU 3AM 2SA2003 microwave oven diode single phase bridge rectifier IC with output 1A 2SC5487 RG-2A Diode Dual MOSFET 606 TFD312S-F
Text: Index by Part Number Part No. Type 2SA1186 Transistor Complementary (LAPT for Audio Output/General Purpose) 2SA1215 Transistor (Complementary (LAPT) for Audio Output/General Purpose) 2SA1216 Transistor (Complementary (LAPT) for Audio Output/General Purpose)
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2SA1186
2SA1215
2SA1216
2SA1262
2SA1294
2SA1295
2SA1303
2SA1386
2SA1386A
2SA1488
2SC5586
transistor 2SC5586
diode RU 3AM
2SA2003
microwave oven diode
single phase bridge rectifier IC with output 1A
2SC5487
RG-2A Diode
Dual MOSFET 606
TFD312S-F
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2SC5471
Abstract: 2SC5853 2sa1015 transistor 2sc1815 transistor 2SA970 transistor 2SC5854 transistor 2sc1815 2Sc5720 transistor 2SC5766 Low-Frequency Low-Noise PNP transistor
Text: Part Number Product Category Polarity Collector-Emitter Voltage V_CEO,max V 2SC1815 Transistor for Low-Frequency Small-Signal Amplification NPN 50.0 150.0 0.25 2SA1015 Transistor for Low-Frequency Small-Signal Amplification PNP -50.0 -150.0 -0.3 2SC2458 Transistor for Low-Frequency Small-Signal Amplification NPN
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2SC1815
2SA1015
2SC2458
2SA1048
2SC2240
2SA970
2SC2459
2SA1049
A1587
2SC4117
2SC5471
2SC5853
2sa1015 transistor
2sc1815 transistor
2SA970 transistor
2SC5854
transistor 2sc1815
2Sc5720 transistor
2SC5766
Low-Frequency Low-Noise PNP transistor
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2SC5376FV
Abstract: sat 1205
Text: 2SC5376FV TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC5376FV Audio Frequency General Purpose Amplifier Applications For Muting and Switching Applications VCE sat (1) = 15 mV (typ.) 1.2±0.05 0.32±0.05 Low Collector Saturation Voltage: 0.22±0.05 •
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2SC5376FV
2SC5376FV
sat 1205
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TRANSISTOR KT 837
Abstract: a1046 transistor A1046 A1684
Text: Ordering number:ENN5535A NPN Epitaxial Planar Silicon Transistor 2SC5374 VHF to UHF Band OSC, High-Frequency Amplifiers Applications Features Package Dimensions S21e2=10.5dB • High gain : typ f=1GHz . · High cutoff frequency : fT=5.2GHz typ. unit:mm
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ENN5535A
2SC5374
2SC5374]
TRANSISTOR KT 837
a1046
transistor A1046
A1684
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ITR08169
Abstract: 2SC5374 ITR08168 ITR08170 ITR08171 ITR08172
Text: Ordering number:ENN5535A NPN Epitaxial Planar Silicon Transistor 2SC5374 VHF to UHF Band OSC, High-Frequency Amplifiers Applications Features Package Dimensions ⏐S21e⏐2=10.5dB • High gain : typ f=1GHz . · High cutoff frequency : fT=5.2GHz typ. unit:mm
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ENN5535A
2SC5374
S21e2
2SC5374]
ITR08169
2SC5374
ITR08168
ITR08170
ITR08171
ITR08172
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2SC5375
Abstract: ITR06394 ITR06395 ITR06396 ITR06397
Text: Ordering number:ENN5541A NPN Epitaxial Planar Silicon Transistor 2SC5375 VHF to UHF Band OSC, High-Frequency Amplifiers Applications Features Package Dimensions ⏐S21e⏐2=10dB • High gain : typ f=1GHz . · High cutoff frequency : fT=5.2GHz typ. unit:mm
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ENN5541A
2SC5375
S21e2
2059B
2SC5375]
2SC5375
ITR06394
ITR06395
ITR06396
ITR06397
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Untitled
Abstract: No abstract text available
Text: Ordering number:ENN5541A NPN Epitaxial Planar Silicon Transistor 2SC5375 VHF to UHF Band OSC, High-Frequency Amplifiers Applications Features Package Dimensions S21e2=10dB • High gain : typ f=1GHz . · High cutoff frequency : fT=5.2GHz typ. unit:mm
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ENN5541A
2SC5375
2059B
2SC5375]
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Untitled
Abstract: No abstract text available
Text: 2SC5376CT TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process 2SC5376CT General Purpose Amplifier Applications Switching and Muting Switch Applications • Low saturation voltage: VCE (sat) (1) = 15 mV (typ.) • Large collector current: IC = 400 mA (max)
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2SC5376CT
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2SC5376F
Abstract: No abstract text available
Text: 2SC5376F TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC5376F Audio Frequency General Purpose Amplifier Applications For Muting and Switching Applications • Low Collector Saturation Voltage: VCE sat (1) = 15 mV (typ.) • High Collector Current: IC = 400 mA (max)
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2SC5376F
2SC5376F
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Untitled
Abstract: No abstract text available
Text: 2SC5376FV TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC5376FV Audio Frequency General Purpose Amplifier Applications For Muting and Switching Applications @IC = 10 mA/IB = 0.5 mA Characteristics Symbol Rating Unit Collector-base voltage VCBO 15 V Collector-emitter voltage
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2SC5376FV
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2SC5375
Abstract: TA-0824 Transistor 4733 transistor kt 801 IC 7484
Text: Ordering number:EN5541A NPN Epitaxial Planar Silicon Transistor 2SC5375 VHF to UHF Band OSC, High-Frequency Amplifiers Applications Features Package Dimensions • High gain : S21e =10dB typ f=1GHz . · High cutoff frequency : fT=5.2GHz typ. 2 unit:mm
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EN5541A
2SC5375
2059B
2SC5375]
2SC5375
TA-0824
Transistor 4733
transistor kt 801
IC 7484
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2SC5376FV
Abstract: No abstract text available
Text: 2SC5376FV TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC5376FV Audio Frequency General Purpose Amplifier Applications For Muting and Switching Applications @IC = 10 mA/IB = 0.5 mA Characteristics Symbol Rating Unit Collector-base voltage VCBO 15 V Collector-emitter voltage
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2SC5376FV
2SC5376FV
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2SC5374
Abstract: KT 819 transistor Specification zo 607
Text: Ordering number:EN5535A NPN Epitaxial Planar Silicon Transistor 2SC5374 VHF to UHF Band OSC, High-Frequency Amplifiers Applications Features Package Dimensions • High gain : S21e =10.5dB typ f=1GHz . · High cutoff frequency : fT=5.2GHz typ. 2 unit:mm
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EN5535A
2SC5374
2SC5374]
2SC5374
KT 819 transistor
Specification zo 607
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Untitled
Abstract: No abstract text available
Text: 2SC5376FV TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC5376FV Audio Frequency General Purpose Amplifier Applications For Muting and Switching Applications @IC = 10 mA/IB = 0.5 mA Characteristics Symbol Rating Unit Collector-base voltage VCBO 15 V Collector-emitter voltage
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2SC5376FV
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2SC5376F
Abstract: No abstract text available
Text: 2SC5376F TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC5376F Audio Frequency General Purpose Amplifier Applications For Muting and Switching Applications • Low Collector Saturation Voltage: VCE sat (1) = 15 mV (typ.) · High Collector Current: IC = 400 mA (max)
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2SC5376F
2SC5376F
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2N2222A 338
Abstract: TFK 949 2N1167 halbleiter index transistor ad161 BSY19 al103 ac128 TFK 404 Tfk 931
Text: Towers' International Transistor Selector Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U p date One London: NEW YORK
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2CY17
2CY18
2CY19
2CY20
2CY21
500MA
500MA
2N2222A 338
TFK 949
2N1167
halbleiter index transistor
ad161
BSY19
al103
ac128
TFK 404
Tfk 931
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y51 h 120c
Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711
Text: Towers' International Transistor Selector ! o Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U pdate Three London: NEW YORK
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500MA
500MA
240MWF
240MWF
y51 h 120c
bd124
KT368
BFQ59
Silec Semiconductors
BD214
al103
AFY18
bd192
MM1711
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SE110N
Abstract: A4032 SE130N SE005N SE090N high hfe transistor FMQG5FM SLA7022M SE012 3gu diode
Text: Index Type No. Order Type No. Type Type No. 2SA1186 Type 16 2SC3830 16 2SC3831 16 2SC3832 19 2SC3833 2SA1294 1R 2SC3834 2SA1295 16 2SC3835 16 2SC3851 General Purpose Transistor 19 16 2SC3852 Low VcE(sat)-High hFE Transistor 18 19 2SC3856 16 2SC3857 Transistors for Audio Am plifier (Single Emitter)
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2SA1186
2SA1215
2SA1216
2SA1262
2SA1294
2SA1295
2SA1303
2SA1386
2SA1488
2SA1492
SE110N
A4032
SE130N
SE005N
SE090N
high hfe transistor
FMQG5FM
SLA7022M
SE012
3gu diode
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2SC5376
Abstract: No abstract text available
Text: TOSHIBA 2SC5376 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE 2SC5376 Unit in mm AUDIO FREQUENCY GENERAL PURPOSE AMPLIFIER APPLICATIONS FOR MUTING AND SWITCHING APPLICATIONS • Low Collector Saturation Voltage : V ce sat (l) = 15mV (Typ.) @ Iq = 10mA /Ig = 0.5mA
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2SC5376
400mA
2SC5376
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