MN1280
Abstract: KGT50N60kda bc547 smd transistor kia1117af transistor smd zG y6 smd transistor MB4213 y4 smd transistor smd transistor zaa KGT25N120NDA
Text: Table of Contents SMD THD ▣ Table of Contents 2 ▣ Bipolar Junction Transistor 4 Transistor Line-up PNP Transistor Transistor Line-up (NPN Transistor) Small Signal General Purpose Transistor Current Regulating Device Small Signal Low Noise Transistor
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Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD 2SD1664 NPN SILICON TRANSISTOR MEDIUM POWER NPN TRANSISTOR DESCRIPTION The UTC 2SD1664 is an epitaxial planar type NPN silicon transistor. FEATURES *Low VCE SAT : VCE (SAT)= 0.15V(Typ.) (IC/IB= 500mA/50mA) * Complement the 2SB1132.
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2SD1664
2SD1664
500mA/50mA)
2SB1132.
2SD1664G-x-AB3-R
2SD1664G-x-AE3-R
OT-89
OT-23
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Untitled
Abstract: No abstract text available
Text: UTC 2SD1664 NPN EPITAXIAL SILICON TRANSISTOR MEDIUM POWER NPN TRANSISTOR DESCRIPTION The UTC 2SD1664 is an epitaxial planar type NPN silicon transistor. 1 FEATURES *Low VCE sat : VCE (sat)= 0.15V(Typ) (Ic/IB= 500mA/50mA) *Complement the 2SB1132. SOT-89 1:EMITTER
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2SD1664
2SD1664
500mA/50mA)
2SB1132.
OT-89
QW-R208-025
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2SD1664
Abstract: 2SB1132
Text: UTC 2SD1664 NPN EPITAXIAL SILICON TRANSISTOR MEDIUM POWER NPN TRANSISTOR DESCRIPTION The UTC 2SD1664 is an epitaxial planar type NPN silicon transistor. 1 FEATURES *Low VCE sat : VCE (sat)= 0.15V(Typ) (Ic/IB= 500mA/50mA) *Complement the 2SB1132. SOT-89 1:EMITTER
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2SD1664
2SD1664
500mA/50mA)
2SB1132.
OT-89
QW-R208-025
2SB1132
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2SD1664L
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD 2SD1664 NPN SILICON TRANSISTOR MEDIUM POWER NPN TRANSISTOR DESCRIPTION 1 The UTC 2SD1664 is an epitaxial planar type NPN silicon transistor. FEATURES SOT-89 *Low VCE SAT : VCE (SAT)= 0.15V(Typ) (IC/IB= 500mA/50mA) *Complement the 2SB1132.
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2SD1664
2SD1664
OT-89
500mA/50mA)
2SB1132.
2SD1664L
2SD1664-x-AB3-R
2SD1664L-x-AB3-R
2SD1664L
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2SB1132
Abstract: 2SD1664 2SD1664G-
Text: UNISONIC TECHNOLOGIES CO., LTD 2SD1664 NPN SILICON TRANSISTOR MEDIUM POWER NPN TRANSISTOR DESCRIPTION The UTC 2SD1664 is an epitaxial planar type NPN silicon transistor. FEATURES 1 *Low VCE SAT : VCE (SAT)= 0.15V(Typ.) (IC/IB= 500mA/50mA) * Complement the 2SB1132.
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2SD1664
2SD1664
500mA/50mA)
2SB1132.
OT-89
2SD1664L
2SD1664G
2SD1664-x-AB3-R
2SD1664L-x-AB3-R
2SD1664G-x-AB3-R
2SB1132
2SD1664G-
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oz960
Abstract: khb*9D5N20P MB4213 KIA78*pI MN1280 F10P048 KIA7812A MJE13007 mb4213 equivalent TRANSISTOR SMD N2 3j
Text: Table of Contents Index 4 SMD ✞✟ Bipolar Junction Transistors Transistor Line-up PNP Transistor Transistor Line-up (NPN Transistor) Small Signal General Purpose Transistors Small Signal Low Noise Transistors Small Signal Audio Muting Transistors Small Signal High hFE Transistors
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KIA7900PI
TC7SH04FU
KIC7SH04FU
SC604*
KAC3301QN
M51943
KIA7042AP/AF
TC7SH08FU
KIC7SH08FU
LT1937
oz960
khb*9D5N20P
MB4213
KIA78*pI
MN1280
F10P048
KIA7812A
MJE13007
mb4213 equivalent
TRANSISTOR SMD N2 3j
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2SD1858
Abstract: 2SB1132 2SB1237 2SD1664
Text: Transistors Medium Power Transistor 32V, 1A 2SD1664 / 2SD1858 FFeatures 1) Low VCE(sat), VCE(sat) = 0.15V (typical). (IC / IB = 500mA / 50mA) 2) Complements the 2SB1132 / 2SB1237. FExternal dimensions (Units: mm) FStructure Epitaxial planar type NPN silicon transistor
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2SD1664
2SD1858
500mA
2SB1132
2SB1237.
96-207-D12)
2SD1858
2SB1237
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transistor Ic 1A datasheet NPN
Abstract: 2SD1858 2SD1664 NPN Silicon Epitaxial Planar Transistor Transistor d12 Transistor 2SD1858 2SB1237 2sb123 NPN Transistor Characteristics Silicon NPN Epitaxial Planar Power Transistor
Text: Transistors Medium Power Transistor 32V, 1A 2SD1664 / 2SD1858 FFeatures 1) Low VCE(sat), VCE(sat) = 0.15V (typical). (IC / IB = 500mA / 50mA) 2) Complements the 2SB1132 / 2SB1237. FExternal dimensions (Units: mm) FStructure Epitaxial planar type NPN silicon transistor
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2SD1664
2SD1858
500mA
2SB1132
2SB1237.
96-207-D12)
transistor Ic 1A datasheet NPN
2SD1858
NPN Silicon Epitaxial Planar Transistor
Transistor d12
Transistor 2SD1858
2SB1237
2sb123
NPN Transistor Characteristics
Silicon NPN Epitaxial Planar Power Transistor
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Untitled
Abstract: No abstract text available
Text: MP6X1 Transistors Medium Power Transistor 32V, 1A MP6X1 zDimensions (Unit : mm) zApplications Low frequency amplifier MPT6 zFeatures 1) Low VCE(sat), VCE(sat) = 0.15V(Typ.) (IC / IB = 500mA / 50mA) 2) Contain two 2SD1664-dies in a package. zStructure NPN silicon epitaxial planar transistor
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500mA
2SD1664-dies
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2SB1132
Abstract: 2SB1237 2SA1515S 2SD1858 transistor pnp 1a 2sB1237 transistor "Power transistor" data sheet transistor PNP 2SD1664 2SB1132 transistor
Text: Transistors Medium Power Transistor *32V, *1A 2SB1132 / 2SA1515S / 2SB1237 FFeatures 1) Low VCE(sat). VCE(sat) = *0.2V (Typ.) (IC / IB = –500mA / –50mA) 2) Compliments 2SD1664 / 2SD1858. FExternal dimensions (Units: mm) FStructure Epitaxial planar type
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2SB1132
2SA1515S
2SB1237
500mA
2SD1664
2SD1858.
96-120-B12)
2SB1237
2SD1858
transistor pnp 1a
2sB1237 transistor
"Power transistor"
data sheet transistor PNP
2SB1132 transistor
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Untitled
Abstract: No abstract text available
Text: Transistors Medium Power Transistor *32V, *1A 2SB1132 / 2SA1515S / 2SB1237 FFeatures 1) Low VCE(sat). VCE(sat) = *0.2V (Typ.) (IC / IB = –500mA / –50mA) 2) Compliments 2SD1664 / 2SD1858. FExternal dimensions (Units: mm) FStructure Epitaxial planar type
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2SB1132
2SA1515S
2SB1237
500mA
2SD1664
2SD1858.
96-120-B12)
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p64 transistor
Abstract: 2SD1664PT 2SD1664P
Text: CHENMKO ENTERPRISE CO.,LTD 2SD1664PT SURFACE MOUNT NPN Switching Transistor VOLTAGE 32 Volts CURRENT 1 Ampere APPLICATION * Telephone and proferssional communction equipment. * Other switching applications. FEATURE SC-62/SOT-89 * Suitable for high packing density.
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2SD1664PT
SC-62/SOT-89
p64 transistor
2SD1664PT
2SD1664P
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2SD1664GP
Abstract: No abstract text available
Text: CHENMKO ENTERPRISE CO.,LTD 2SD1664GP SURFACE MOUNT NPN Switching Transistor VOLTAGE 32 Volts CURRENT 1 Ampere APPLICATION * Telephone and proferssional communction equipment. * Other switching applications. FEATURE SC-62/SOT-89 * Suitable for high packing density.
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2SD1664GP
SC-62/SOT-89
2SD1664GP
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Untitled
Abstract: No abstract text available
Text: MP6Z1 Transistors Medium Power Transistor -32V, -1A MP6Z1 zApplications Low frequency amplifier zDimensions (Unit : mm) MPT6 zFeatures 1) Low VCE(sat) VCE(sat) = -0.2V(Typ.) (IC / IB = -500mA / -50mA) 2) Contains 2SD1664-die and 2SB1132-die in a package.
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-500mA
-50mA)
2SD1664-die
2SB1132-die
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MP6Z1
Abstract: No abstract text available
Text: MP6Z1 Transistors Medium Power Transistor -32V, -1A MP6Z1 zApplications Low frequency amplifier zDimensions (Unit : mm) MPT6 zFeatures 1) Low VCE(sat) VCE(sat) = -0.2V(Typ.) (IC / IB = -500mA / -50mA) 2) Contains 2SD1664-die and 2SB1132-die in a package.
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-500mA
-50mA)
2SD1664-die
2SB1132-die
MP6Z1
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Untitled
Abstract: No abstract text available
Text: MP6Z1 Transistors Medium Power Transistor -32V, -1A MP6Z1 zApplications Low frequency amplifier zDimensions (Unit : mm) MPT6 zFeatures 1) Low VCE(sat) VCE(sat) = -0.2V(Typ.) (IC /IB = -500mA / -50mA) 2) Contains 2SD1664-die and 2SB1132-die in a package.
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-500mA
-50mA)
2SD1664-die
2SB1132-die
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Untitled
Abstract: No abstract text available
Text: Medium Power Transistor -32V, -1A MP6Z1 Dimensions (Unit : mm) Applications Low frequency amplifier MPT6 Features 1) Low VCE(sat) VCE(sat) = -0.2V(Typ.) (IC / IB = -500mA / -50mA) 2) Contains 2SD1664-die and 2SB1132-die in a package. (6) (5) (4)
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-500mA
-50mA)
2SD1664-die
2SB1132-die
R1010A
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MP6X1
Abstract: No abstract text available
Text: MP6X1 Transistors Medium Power Transistor 32V, 1A MP6X1 zDimensions (Unit : mm) zApplications Low frequency amplifier MPT6 zFeatures 1) Low VCE(sat), VCE(sat) = 0.15V(Typ.) (IC / IB = 500mA / 50mA) 2) Contain two 2SD1664-dies in a package. (6) (5) (4) (1)
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500mA
2SD1664-dies
MP6X1
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smd transistor marking br
Abstract: smd transistor marking da smd marking DA transistor SMD DA MARKING SMD TRANSISTOR P SMD BR 32 DA SMD transistor smd marking smd transistor marking 1 da transistor 2SD1664
Text: Transistors SMD Type Medium Power Transistor 2SD1664 Features Low VCE sat Compliments to 2SB1132 Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-Base Voltage VCBO 40 V Collector-Emitter Voltage VCEO 32 V Emitter-Base Voltage VEBO 5
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2SD1664
2SB1132
40x40x0
500mA
-50mA
100MHz
smd transistor marking br
smd transistor marking da
smd marking DA
transistor SMD DA
MARKING SMD TRANSISTOR P
SMD BR 32
DA SMD
transistor smd marking
smd transistor marking 1 da
transistor 2SD1664
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Untitled
Abstract: No abstract text available
Text: ST 2SD1664U NPN SILICON EPITAXIAL MEDIUM POWER TRANSISTOR Absolute Maximum Ratings Ta = 25 OC Parameter Symbol Value Unit Collector Base Voltage VCBO 40 V Collector Emitter Voltage VCEO 32 V Emitter Base Voltage Collector Current - DC Collector Current - Pulse 1)
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2SD1664U
OT-89
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Abstract: No abstract text available
Text: ST 2SD1664U NPN SILICON EPITAXIAL MEDIUM POWER TRANSISTOR Absolute Maximum Ratings Ta = 25 OC Parameter Symbol Value Unit Collector Base Voltage VCBO 40 V Collector Emitter Voltage VCEO 32 V Emitter Base Voltage Collector Current - DC Collector Current - Pulse 1)
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2SD1664U
OT-89
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Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89 Plastic-Encapsulate Transistors 2SD1664 SOT-89 TRANSISTOR NPN 1. BASE FEATURES Power dissipation 2. COLLECTOR PCM: 0.5 1 W (Tamb=25℃) 2 3. EMITTER Collector current 1 A ICM: Collector-base voltage
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OT-89
2SD1664
OT-89
500mA,
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Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89-3L Plastic-Encapsulate Transistors 2SD1664 SOT-89-3L TRANSISTOR NPN 1. BASE FEATURES z Low VCE(sat), VCE(sat)=0.15V(typical).(IC/IB=500mA/50mA) z Complements to 2SB1132 2. COLLECTOR 1 2 3. EMITTER
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OT-89-3L
2SD1664
OT-89-3L
500mA/50mA)
2SB1132
100mA
100MHz
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