MN1280
Abstract: KGT50N60kda bc547 smd transistor kia1117af transistor smd zG y6 smd transistor MB4213 y4 smd transistor smd transistor zaa KGT25N120NDA
Text: Table of Contents SMD THD ▣ Table of Contents 2 ▣ Bipolar Junction Transistor 4 Transistor Line-up PNP Transistor Transistor Line-up (NPN Transistor) Small Signal General Purpose Transistor Current Regulating Device Small Signal Low Noise Transistor
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oz960
Abstract: khb*9D5N20P MB4213 KIA78*pI MN1280 F10P048 KIA7812A MJE13007 mb4213 equivalent TRANSISTOR SMD N2 3j
Text: Table of Contents Index 4 SMD ✞✟ Bipolar Junction Transistors Transistor Line-up PNP Transistor Transistor Line-up (NPN Transistor) Small Signal General Purpose Transistors Small Signal Low Noise Transistors Small Signal Audio Muting Transistors Small Signal High hFE Transistors
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KIA7900PI
TC7SH04FU
KIC7SH04FU
SC604*
KAC3301QN
M51943
KIA7042AP/AF
TC7SH08FU
KIC7SH08FU
LT1937
oz960
khb*9D5N20P
MB4213
KIA78*pI
MN1280
F10P048
KIA7812A
MJE13007
mb4213 equivalent
TRANSISTOR SMD N2 3j
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2SD468
Abstract: No abstract text available
Text: ST 2SD468 NPN Silicon Epitaxial Planar Transistor Low Frequency Power amplifier applications. The transistor is subdivided into two groups B and C according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations.
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2SD468
2SD468
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2SD468
Abstract: No abstract text available
Text: ST 2SD468 NPN Silicon Epitaxial Planar Transistor Low Frequency Power amplifier applications. The transistor is subdivided into two groups B and C according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations.
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2SD468
2SD468
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2SD468
Abstract: 2sD468 transistor
Text: ST 2SD468 NPN Silicon Epitaxial Planar Transistor Low Frequency Power amplifier applications. The transistor is subdivided into two groups B and C according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations.
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2SD468
2SD468
2sD468 transistor
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rjh3047
Abstract: rjh3077 rjp3047 RJH3047DPK rjp3049 rjp6065 rjp3053 RJP3042 smd code FX mosfet RJP6055
Text: 2007.12 Renesas Discrete General Catalog Transistor/Diode/ Triac/ Thyristor www.renesas.com Triacs and Thyristors Small-Signal Transistors Power Transistor Renesas discrete devices: extending the limits Advanced electronic equipment requires larger data processing
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REJ01G0001-0400
rjh3047
rjh3077
rjp3047
RJH3047DPK
rjp3049
rjp6065
rjp3053
RJP3042
smd code FX mosfet
RJP6055
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Untitled
Abstract: No abstract text available
Text: UNISONICTECHNOLOGIESCO., LTD 2SD468 www.unisonic.com.tw Copyright 2008 Unisonic Technologies Co., Ltd NPN SILICON TRANSISTOR 1 of 4 QW-R211-003.B
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2SD468
QW-R211-003
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2SC 8550
Abstract: 6020v4 6030v4 HITACHI 08122B 2SC 8050 HITACHI 08123B transistor h945 H945 TRANSISTOR c 6030v4 2sk3545
Text: Status List HITACHI TRANSISTOR/GaAsIC Vol.16-4 2002.11 Topic - Hitachi High Frequency Bipolar Transistors . 2 Index . 3, 4
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3SK309
3SK317
3SK318
BB101C
BB102C
BB301C
BB302C
BB304C
BB305C
BB501C
2SC 8550
6020v4
6030v4
HITACHI 08122B
2SC 8050
HITACHI 08123B
transistor h945
H945
TRANSISTOR c 6030v4
2sk3545
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2SD468
Abstract: transistor 2sd468 2SB562 2SB5621
Text: UTC 2SD468 NPN EPITAXIAL SILICON TRANSISTOR LOW FREQUENCY POWER AMPLIFIER FEATURES *Low frequency power amplifier *Complement to 2SB562 1 TO-92NL 1:EMITTER 2:COLLECTOR 3:BASE ABSOLUTE MAXIMUM RATINGS Ta=25°C, unless otherwise specified PARAMETER SYMBOL
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2SD468
2SB562
O-92NL
QW-R211-003
2SD468
transistor 2sd468
2SB562
2SB5621
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2SB562
Abstract: 2SD468
Text: UTC 2SB562 PNP EPITAXIAL SILICON TRANSISTOR LOW FREQUENCY POWER AMPLIFIER FEATURES *Low frequency power amplifier *Complement to 2SD468 1 TO-92NL 1:EMITTER 2:COLLECTOR 3:BASE ABSOLUTE MAXIMUM RATINGS Ta=25°C, unless otherwise specified PARAMETER SYMBOL
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2SB562
2SD468
O-92NL
QW-R211-004
2SB562
2SD468
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2SD468
Abstract: 2SD468L 2sD468 transistor pf 08a -pt 2SB562 2SB56 2SB5621
Text: UNISONIC TECHNOLOGIES CO., LTD 2SD468 NPN SILICON TRANSISTOR LOW FREQUENCY POWER AMPLIFIER FEATURES 1 TO-92 * Low frequency power amplifier * Complement to 2SB562 1 TO-92NL *Pb-free plating product number: 2SD468L ORDERING INFORMATION Ordering Number
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2SD468
2SB562
O-92NL
2SD468L
2SD468-x-T92-B
2SD468L-x-T92-B
2SD468-x-T92-K
2SD468L-x-T92-K
2SD468-x-T9N-B
2SD468L-x-T9N-B
2SD468
2SD468L
2sD468 transistor
pf 08a -pt
2SB562
2SB56
2SB5621
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2sb562
Abstract: 2SD468
Text: UTC 2SB562 PNP EPITAXIAL SILICON TRANSISTOR LOW FREQUENCY POWER AMPLIFIER FEATURES *Low frequency power amplifier *Complement to 2SD468 1 TO-92NL 1:EMITTER 2:COLLECTOR 3:BASE ABSOLUTE MAXIMUM RATINGS Ta=25°C, unless otherwise specified PARAMETER SYMBOL
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2SB562
2SD468
O-92NL
QW-R211-004
2sb562
2SD468
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Untitled
Abstract: No abstract text available
Text: UTC 2SD468 NPN EPITAXIAL SILICON TRANSISTOR LOW FREQUENCY POWER AMPLIFIER FEATURES *Low frequency power amplifier *Complement to 2SB562 1 TO-92NL 1:EMITTER 2:COLLECTOR 3:BASE ABSOLUTE MAXIMUM RATINGS Ta=25°C, unless otherwise specified PARAMETER SYMBOL
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2SD468
2SB562
O-92NL
QW-R211-003
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2SD468
Abstract: 2SB562
Text: UTC 2SD468 NPN EPITAXIAL SILICON TRANSISTOR LOW FREQUENCY POWER AMPLIFIER FEATURES *Low frequency power amplifier *Complement to 2SB562 1 TO-92 1:EMITTER 2:COLLECTOR 3:BASE ABSOLUTE MAXIMUM RATINGS Ta=25°C, unless otherwise specified PARAMETER SYMBOL VALUE
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2SD468
2SB562
QW-R201-050
2SD468
2SB562
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Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92MOD Plastic-Encapsulate Transistors 2SD468 TO – 92M TO – 92MOD TRANSISTOR NPN 1. COLLECTOR 1. EMITTER 2. BASE FEATURES z Low Frequency Power Amplifier z Low Breakdown Voltage 2. COLLECTOR 3. EMITTER
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O-92MOD
2SD468
92MOD
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2SB562
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD 2SB562 PNP EPITAXIAL SILICON TRANSISTOR LOW FREQUENCY POWER AMPLIFIER 1 FEATURES TO-92 * Low frequency power amplifier * Complement to 2SD468 1 TO-92NL ORDERING INFORMATION Order Number Lead Free Halogen Free 2SB562L-x-T92-B
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2SB562
2SD468
O-92NL
2SB562L-x-T92-B
2SB562G-x-T92-B
2SB562L-x-T92-K
2SB562G-x-T92-K
2SB562L-x-T9N-B
2SB562G-x-T9N-B
2SB562L-x-T9N-K
2SB562
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Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92L Plastic-Encapsulate Transistors TO – 92L 2SB562 TRANSISTOR PNP 1. EMITTER 2. COLLECTOR FEATURES z Low Frequency Power Amplifier z Complementary Pair with 2SD468 3. BASE MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
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O-92L
2SB562
2SD468
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Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92L Plastic-Encapsulate Transistors 2SB562 TO-92L TRANSISTOR PNP FEATURES z z 1. EMITTER 2. COLLECTOR Low frequency power amplifier• Complementary pair with 2SD468 3. BASE MAXIMUM RATINGS (TA=25℃ unless otherwise noted)
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O-92L
2SB562
O-92L
2SD468
-10uA
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Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92L Plastic-Encapsulate Transistors TO – 92L 2SD468 TRANSISTOR NPN 1. EMITTER 2. COLLECTOR FEATURES z Low Frequency Power Amplifier z Complementary Pair with 2SB562 3. BASE MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
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O-92L
2SD468
2SB562
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2sb562
Abstract: 2SD468 2SB56
Text: 2SB562 0.9 W, -1 A, -25 V PNP Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURES z Low frequency power amplifier z Complementary pair with 2SD468 ABSOLUTE MAXIMUM RATINGS at Ta = 25°C
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2SB562
2SD468
01-June-2002
2sb562
2SD468
2SB56
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Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92L Plastic-Encapsulate Transistors 2SD468 TO-92L TRANSISTOR（NPN） FEATURES Power dissipation PCM : 0.9 W（Tamb=25℃） Collector current ICM : 1 A Collector-base voltage V BR CBO : 25 V Operating and storage junction temperature range
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O-92L
2SD468
O-92L
270TYP
050TYP
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2sb504
Abstract: KPL 3009 2SB502 BLY34 germanium BF316A BSX12 2SD716, 2SB686 35W amplifiers bf197 acy52
Text: TRANSISTOR DATA TABLES Other Titles of Interest B P 85 International Transistor Equivalents Guide B P286 A R eferen ce G uide to Basic Electronics Terms BP287 A R eferen ce G uide to Practical Electronics Terms n TRANSISTOR DATA TABLES by Hans-Gunther Steidle
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y51 h 120c
Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711
Text: Towers' International Transistor Selector ! o Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U pdate Three London: NEW YORK
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500MA
500MA
240MWF
240MWF
y51 h 120c
bd124
KT368
BFQ59
Silec Semiconductors
BD214
al103
AFY18
bd192
MM1711
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Transistor 2SA 2SB 2SC 2SD
Abstract: 993 395 pnp npn transistor 2SA 101 TRANSISTOR 2SC 635 transistor 2Sb 474 transistor 2SC458 transistor 2sc2512 transistor 2sk 168 transistor 2SD 1153 3SK228
Text: Index Bipolar Transistor PNP, High Frequency Use 2SA Type 2SA673 . 81 2SA 673A . 81
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2SA673
2SA778
BB101C
BB301M
BB301C
Transistor 2SA 2SB 2SC 2SD
993 395 pnp npn
transistor 2SA 101
TRANSISTOR 2SC 635
transistor 2Sb 474
transistor 2SC458
transistor 2sc2512
transistor 2sk 168
transistor 2SD 1153
3SK228
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