MN1280
Abstract: KGT50N60kda bc547 smd transistor kia1117af transistor smd zG y6 smd transistor MB4213 y4 smd transistor smd transistor zaa KGT25N120NDA
Text: Table of Contents SMD THD ▣ Table of Contents 2 ▣ Bipolar Junction Transistor 4 Transistor Line-up PNP Transistor Transistor Line-up (NPN Transistor) Small Signal General Purpose Transistor Current Regulating Device Small Signal Low Noise Transistor
|
Original
|
|
PDF
|
oz960
Abstract: khb*9D5N20P MB4213 KIA78*pI MN1280 F10P048 KIA7812A MJE13007 mb4213 equivalent TRANSISTOR SMD N2 3j
Text: Table of Contents Index 4 SMD ✞✟ Bipolar Junction Transistors Transistor Line-up PNP Transistor Transistor Line-up (NPN Transistor) Small Signal General Purpose Transistors Small Signal Low Noise Transistors Small Signal Audio Muting Transistors Small Signal High hFE Transistors
|
Original
|
KIA7900PI
TC7SH04FU
KIC7SH04FU
SC604*
KAC3301QN
M51943
KIA7042AP/AF
TC7SH08FU
KIC7SH08FU
LT1937
oz960
khb*9D5N20P
MB4213
KIA78*pI
MN1280
F10P048
KIA7812A
MJE13007
mb4213 equivalent
TRANSISTOR SMD N2 3j
|
PDF
|
2SD965U
Abstract: 2SD96
Text: ST 2SD965U NPN Silicon Epitaxial Planar Transistor For low frequency power amplification The transistor is subdivided into two groups, Q and R, according to its DC current gain. Absolute Maximum Ratings Ta = 25 OC Symbol Value Unit Collector to Base Voltage
|
Original
|
2SD965U
OT-89
2SD965U
2SD96
|
PDF
|
Untitled
Abstract: No abstract text available
Text: 2SD965W NPN Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of "-C" specifies halogen & lead-free 2SD965W TRANSISTOR NPN TO-92 FEATURES Power dissipation PCM : 0.75 Collector current ICM : 5 1.EMITTER W Tamb=25 C 2. COLLECTOR 3. BASE A
|
Original
|
2SD965W
270TYP
050TYP
01-Jun-2002
|
PDF
|
2SD965BL
Abstract: No abstract text available
Text: UTC 2SD965B NPN EPITAXIAL SILICON TRANSISTOR LOW VOLTAGE HIGH CURRENT NPN TRANSISTOR FEATURES * Collector current up to 5A * 2SD965B : Collector-Emitter voltage up to 30 V APPLICATIONS * Audio amplifier * Flash unit of camera * Switching circuit 1 TO-92 1: EMITTER
|
Original
|
2SD965B
2SD965BL
QW-R201-078
2SD965BL
|
PDF
|
2SD965BL
Abstract: 2SD965B
Text: UTC 2SD965B NPN EPITAXIAL SILICON TRANSISTOR LOW VOLTAGE HIGH CURRENT NPN TRANSISTOR FEATURES * Collector current up to 5A * 2SD965B : Collector-Emitter voltage up to 30 V APPLICATIONS * Audio amplifier * Flash unit of camera * Switching circuit 1 TO-92 1: EMITTER
|
Original
|
2SD965B
2SD965BL
QW-R201-078
2SD965BL
2SD965B
|
PDF
|
2SD965AL-AB3-R
Abstract: 2SD965 2sd965 transistor 2sd965l ab3r sot 89 2sd965
Text: UNISONIC TECHNOLOGIES CO.,LTD. 2SD965/A NPN EPITAXIAL SILICON TRANSISTOR LOW VOLTAGE HIGH CURRENT NPN TRANSISTOR FEATURES 1 * Collector current up to 5A * 2SD965 : Collector-Emitter voltage up to 20 V * 2SD965A : Collector-Emitter voltage up to 30 V SOT-89
|
Original
|
2SD965/A
2SD965
2SD965A
OT-89
2SD965L/2SD965AL
2SD965-AB3-R
2SD965L-AB3-R
2SD965A-AB3-R
2SD965AL-AB3-R
OT-89
2SD965
2sd965 transistor
2sd965l
ab3r
sot 89 2sd965
|
PDF
|
Untitled
Abstract: No abstract text available
Text: UTC 2SD965B NPN EPITAXIAL SILICON TRANSISTOR LOW VOLTAGE HIGH CURRENT NPN TRANSISTOR FEATURES * Collector current up to 5A * 2SD965B : Collector-Emitter voltage up to 30 V APPLICATIONS * Audio amplifier * Flash unit of camera * Switching circuit 1 TO-92 1: EMITTER
|
Original
|
2SD965B
2SD965BL
QW-R201-078
|
PDF
|
2SD965U
Abstract: No abstract text available
Text: ST 2SD965U NPN Silicon Epitaxial Planar Transistor For low frequency power amplification The transistor is subdivided into two groups, Q and R, according to its DC current gain. Absolute Maximum Ratings Ta = 25 OC Symbol Value Unit Collector to Base Voltage
|
Original
|
2SD965U
OT-89
2SD965U
|
PDF
|
Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD 2SD965/A NPN SILICON TRANSISTOR LOW VOLTAGE HIGH CURRENT TRANSISTOR FEATURES * Collector current up to 5A * UTC 2SD965: Collector-Emitter voltage up to 20 V * UTC 2SD965A: Collector-Emitter voltage up to 30 V APPLICATIONS
|
Original
|
2SD965/A
2SD965:
2SD965A:
2SD965G-x-AB3-R
OT-89
2SD965L-x-T92-B
2SD965G-x-T92-B
2SD965L-x-T92-K
2SD965G-x-T92-K
2SD965L-x-TN3-R
|
PDF
|
2SD965
Abstract: 2SD965AL 2SD965A 2sd965l 2sd965 transistor sot 89 2sd965 2SD965AG
Text: UNISONIC TECHNOLOGIES CO., LTD 2SD965/A NPN SILICON TRANSISTOR LOW VOLTAGE HIGH CURRENT TRANSISTOR FEATURES * Collector current up to 5A * UTC 2SD965: Collector-Emitter voltage up to 20 V * UTC 2SD965A: Collector-Emitter voltage up to 30 V APPLICATIONS
|
Original
|
2SD965/A
2SD965:
2SD965A:
2SD965L/2SD965AL
2SD965G/2SD965AG
2SD965-x-AB3-R
2SD965-x-T92-B
2SD965-x-T92-K
2SD965-x-TN3-R
2SD965A-x-AB3-R
2SD965
2SD965AL
2SD965A
2sd965l
2sd965 transistor
sot 89 2sd965
2SD965AG
|
PDF
|
sot 89 2sd965
Abstract: 2SD965
Text: UTC 2SD965/A NPN EPITAXIAL SILICON TRANSISTOR LOW VOLTAGE HIGH CURRENT NPN TRANSISTOR FEATURES * Collector current up to 5A * 2SD965 : Collector-Emitter voltage up to 20 V * 2SD965A : Collector-Emitter voltage up to 30 V 1 APPLICATIONS * Audio amplifier * Flash unit of camera
|
Original
|
2SD965/A
2SD965
2SD965A
OT-89
2SD965
2SD965A
QW-R208-003
sot 89 2sd965
|
PDF
|
2sd965
Abstract: 2SD965A
Text: UTC 2SD965/A NPN EPITAXIAL SILICON TRANSISTOR LOW VOLTAGE HIGH CURRENT NPN TRANSISTOR FEATURES * Collector current up to 5A * 2SD965 : Collector-Emitter voltage up to 20 V * 2SD965A : Collector-Emitter voltage up to 30 V 1 APPLICATIONS * Audio amplifier * Flash unit of camera
|
Original
|
2SD965/A
2SD965
2SD965A
OT-89
QW-R208-003
2sd965
2SD965A
|
PDF
|
2SD965
Abstract: 2sd965 transistor r10100 C8010 2SD965P
Text: ST 2SD965 NPN Silicon Epitaxial Planar Transistor for low-frequency power and stroboscope applications. The transistor is subdivided into three groups P, Q and R, according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations.
|
Original
|
2SD965
2SD965
2sd965 transistor
r10100
C8010
2SD965P
|
PDF
|
|
|
2sd965
Abstract: C8010 C5001
Text: ST 2SD965 NPN Silicon Epitaxial Planar Transistor for low-frequency power and stroboscope applications. The transistor is subdivided into three groups P, Q and R, according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations.
|
Original
|
2SD965
2sd965
C8010
C5001
|
PDF
|
Untitled
Abstract: No abstract text available
Text: UTC 2SD965/A NPN EPITAXIAL SILICON TRANSISTOR LOW VOLTAGE HIGH CURRENT NPN TRANSISTOR FEATURES * Collector current up to 5A * 2SD965 : Collector-Emitter voltage up to 20 V * 2SD965A : Collector-Emitter voltage up to 30 V 1 APPLICATIONS * Audio amplifier * Flash unit of camera
|
Original
|
2SD965/A
2SD965
2SD965A
2SD965L/2SD965AL
QW-R201-007
|
PDF
|
Untitled
Abstract: No abstract text available
Text: UTC 2SD965/A NPN EPITAXIAL SILICON TRANSISTOR LOW VOLTAGE HIGH CURRENT NPN TRANSISTOR FEATURES * Collector current up to 5A * 2SD965 : Collector-Emitter voltage up to 20 V * 2SD965A : Collector-Emitter voltage up to 30 V 1 APPLICATIONS * Audio amplifier * Flash unit of camera
|
Original
|
2SD965/A
2SD965
2SD965A
2SD965L/2SD965AL
QW-R201-007
|
PDF
|
Untitled
Abstract: No abstract text available
Text: UTC 2SD965/A NPN EPITAXIAL SILICON TRANSISTOR LOW VOLTAGE HIGH CURRENT NPN TRANSISTOR FEATURES * Collector current up to 5A * 2SD965 : Collector-Emitter voltage up to 20 V * 2SD965A : Collector-Emitter voltage up to 30 V 1 APPLICATIONS * Audio amplifier * Flash unit of camera
|
Original
|
2SD965/A
2SD965
2SD965A
QW-R201-007
|
PDF
|
Untitled
Abstract: No abstract text available
Text: UTC 2SD965 NPN EPITAXIAL SILICON TRANSISTOR LOW VOLTAGE HIGH CURRENT NPN TRANSISTOR FEATURES *Collector current up to 5A * Collector-Emitter voltage up to 20 V APPLICATIONS 1 * Audio amplifier * Flash unit of camera * Switching circuit TO-92 1:EMITTER 2:COLLECTOR 3: BASE
|
Original
|
2SD965
|
PDF
|
Untitled
Abstract: No abstract text available
Text: 2SD965 NPN Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of "-C" specifies halogen & lead-free 2SD965 TRANSISTOR（ NPN ） TO i 92 FEATURES 1.EMITTER Power dissipation PCM : 0.75 Collector current ICM : 5 W（Tamb=25℃） 2. COLLECTOR
|
Original
|
2SD965
270TYP
050TYP
01-Jun-2002
|
PDF
|
2SD965
Abstract: No abstract text available
Text: UTC 2SD965 /A NPN EPITAXIAL SILICON TRANSISTOR LOW VOLTAGE HIGH CURRENT NPN TRANSISTOR FEATURES * Collector current up to 5A * 2SD965 : Collector-Emitter voltage up to 20 V * 2SD965A : Collector-Emitter voltage up to 30 V 1 APPLICATIONS * Audio amplifier * Flash unit of camera
|
Original
|
2SD965
2SD965
2SD965A
O-252
2SD965A
QW-R209-007
|
PDF
|
2SD965
Abstract: 2SD965A 2sd965 transistor
Text: UTC 2SD965 /A NPN EPITAXIAL SILICON TRANSISTOR LOW VOLTAGE HIGH CURRENT NPN TRANSISTOR FEATURES * Collector current up to 5A * 2SD965 : Collector-Emitter voltage up to 20 V * 2SD965A : Collector-Emitter voltage up to 30 V 1 APPLICATIONS * Audio amplifier * Flash unit of camera
|
Original
|
2SD965
2SD965
2SD965A
O-252
QW-R209-007
2SD965A
2sd965 transistor
|
PDF
|
2sd965 transistor
Abstract: 2SD965 2SD96
Text: ST 2SD965 NPN Silicon Epitaxial Planar Transistor for low-frequency power and stroboscope applications. The transistor is subdivided into three groups P, Q and R, according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations.
|
Original
|
2SD965
2sd965 transistor
2SD965
2SD96
|
PDF
|
Untitled
Abstract: No abstract text available
Text: | FORWARD INTERNATIONAL ELECIRONICSLID. 2SD965 SEMICONDUCTOR TECHNICAL DATA NPN EPITAXIAL SILICON TRANSISTOR LOW VOLTAGE HIGH CURRENT TRANSISTOR FEATURES *H5gh current output up to 5A ♦Colfector-Emitter voltage ij> to 20V APPLICATIONS •Audio power amplifier
|
OCR Scan
|
2SD965
100uA
|
PDF
|
