2SK1954
Abstract: No abstract text available
Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK1954,1954-Z SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION PACKAGE DRAWINGS Unit: mm 6.5 ±0.2 1.5 −0.1 voltage switching applications. +0.2 The 2SK1954 is N-channel MOS Field Effect Transistor designed for high
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2SK1954
1954-Z
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Untitled
Abstract: No abstract text available
Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK1954,1954-Z SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION <R> PACKAGE DRAWINGS Unit: mm 6.5 ±0.2 1.5 −0.1 voltage switching applications. +0.2 The 2SK1954 is N-channel MOS Field Effect Transistor designed for high
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2SK1954
1954-Z
O-252
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2SA1444 equivalent
Abstract: BA1F4M transistor equivalent table POWER MOS FET 2sj 2sk 2sd882 equivalent Equivalent to transistor 2sc945 2SA1206 TRANSISTOR equivalent 2SC1845 equivalent 2SK type 2SD1694 equivalent
Text: CD-ROM Transistor CD-ROM X13769XJ2V0CD00 08-1 Transistor Quick Reference by Package TO–92 • TO-92 Type Transistor VCEO V ~15 ~30 ~50 ~70 ~100 ~150 ~200 ~250 2SA1376 2SA1376A 2SC3478 2SC3478A 2SA1544 ~400 IC (A) ~20 m 2SC1674 2SA1206∗∗ 2SA988 2SA992
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X13769XJ2V0CD00
2SA1206
2SC1674
2SA988
2SA992
2SC1841
2SC1845
2SA733
2SA990
2SC945
2SA1444 equivalent
BA1F4M
transistor equivalent table
POWER MOS FET 2sj 2sk
2sd882 equivalent
Equivalent to transistor 2sc945
2SA1206 TRANSISTOR equivalent
2SC1845 equivalent
2SK type
2SD1694 equivalent
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rjh3047
Abstract: rjh3077 rjp3047 RJH3047DPK rjp3049 rjp6065 rjp3053 RJP3042 smd code FX mosfet RJP6055
Text: 2007.12 Renesas Discrete General Catalog Transistor/Diode/ Triac/ Thyristor www.renesas.com Triacs and Thyristors Small-Signal Transistors Power Transistor Renesas discrete devices: extending the limits Advanced electronic equipment requires larger data processing
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REJ01G0001-0400
rjh3047
rjh3077
rjp3047
RJH3047DPK
rjp3049
rjp6065
rjp3053
RJP3042
smd code FX mosfet
RJP6055
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2sk1060
Abstract: 2SK type transistor 2sk transistor 2sk193 2SK105 Datasheet transistor 2sk162 transistor SST 250 2SK1794 2SK104 2SK2234
Text: Transistor Field Effect Transistor Small Signal FET • 2SK type Junction type Part number Absolute maximum ratings (TA = 25 °C) Package Electrical characteristics (TA = 25 °C) VGDO (V) ID (mA) PT (mW) |Yfs1| Applications IDSS (mA) (ms) TYP. 2.5 TYP. 2SK104
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2SK104
2SK105
2SK162
2SK163
2SK193
2SK195
2SK505
X10679EJCV0SG00
1996P
2sk1060
2SK type
transistor 2sk
transistor 2sk193
2SK105 Datasheet
transistor 2sk162
transistor SST 250
2SK1794
2SK104
2SK2234
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2SC 8550
Abstract: 6020v4 6030v4 HITACHI 08122B 2SC 8050 HITACHI 08123B transistor h945 H945 TRANSISTOR c 6030v4 2sk3545
Text: Status List HITACHI TRANSISTOR/GaAsIC Vol.16-4 2002.11 Topic - Hitachi High Frequency Bipolar Transistors . 2 Index . 3, 4
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3SK309
3SK317
3SK318
BB101C
BB102C
BB301C
BB302C
BB304C
BB305C
BB501C
2SC 8550
6020v4
6030v4
HITACHI 08122B
2SC 8050
HITACHI 08123B
transistor h945
H945
TRANSISTOR c 6030v4
2sk3545
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2SK1930
Abstract: No abstract text available
Text: 2SK1930 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSII.5 2SK1930 Chopper Regulator, DC−DC Converter, and Motor Drive Applications Low drain−source ON resistance : RDS (ON) = 3.0 Ω (typ.) High forward transfer admittance : |Yfs| = 2.0 S (typ.)
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2SK1930
2SK1930
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2SK1954
Abstract: 2SK1954-Z MEI-1202 TEA-1035
Text: DATA SHEET ir NEC MOS FIELD EFFECT POWER TRANSISTOR 2SK1954, 2SK1954-Z » - M SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION PACKAGE DIMENSIONS The 2S K1954 is N -channel M O S Field Effect Transistor in millimeters
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OCR Scan
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2SK1954,
2SK1954-Z
2SK1954
IEI-1209)
2SK1954-Z
MEI-1202
TEA-1035
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2SK1954
Abstract: 2SK1954-Z MEI-1202 TEA-1035
Text: r NEC - • - DATA SHEET MOS FIELD EFFECT POWER TRANSISTOR 2SK1954, 2SK1954-Z SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION PACKAGE DIMENSIONS The 2SK1954 is N-channel MOS Field Effect Transistor designed for high voltage switching applications.
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OCR Scan
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2SK1954,
2SK1954-Z
2SK1954
IEI-1209)
MEI-1202
TEA-1035
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2SK1953
Abstract: transistor 7905 nec 7905 7905 Nec MEI-1202 TEA-1035 TC-2447
Text: DATA SHEET NEC MOS FIELD EFFECT POWER TRANSISTOR 2SK1953 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION The 2SK1953 is N-channel MOS Field Effect Transistor PACKAGE DIMENSIONS in m illim eters designed fo r high voltage switching applications.
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OCR Scan
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2SK1953
IEI-1209)
transistor 7905
nec 7905
7905 Nec
MEI-1202
TEA-1035
TC-2447
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Y243
Abstract: 2SK1992 2SK1993 TEA-1035 t3gu
Text: DATA SHEET A MOS FIELD EFFECT POWER TRANSISTOR 2SK1992/2SK1993 SWITCHING N-CHANIMEL POWER MOS FET INDUSTRIAL USE DESCRIPTION The 2SK1992/2SK1993 is N-channel MOS Field Effect Transistor PACKAGE DIMENSIONS in millimeters designed fo r high voltage switching applications.
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2SK1992/2SK1993
IEI-1209)
Y243
2SK1992
2SK1993
TEA-1035
t3gu
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transistor NEC D 882 p
Abstract: nec d 882 p nec d 882 p transistor transistor nec d 882 p transistor transistor nec d 882 NEC 882 p 2SK19 transistor NEC 882 p c 879 transistor transistor+2sk
Text: MOS FIELD EFFECT POWER TRANSISTOR 2SK1954, 2SK1954-Z SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION PACKAGE DIMENSIONS Th e 2SK1954 is N-channel M O S Field Effect Transistor designed for high voltage sw itching applications. tin millimeters
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2SK1954,
2SK1954-Z
2SK1954
2SK1954
IEI-1209>
transistor NEC D 882 p
nec d 882 p
nec d 882 p transistor transistor
nec d 882 p transistor
transistor nec d 882
NEC 882 p
2SK19
transistor NEC 882 p
c 879 transistor
transistor+2sk
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NEC JAPAN 7915
Abstract: nec 7915 TC-7915 K1994 2sk1994
Text: DATA SHEET NEC MOS FIELD EFFECT POWER TRANSISTOR 2SK1994 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION The 2SK1994 is N-channel M O S Field Effect Transistor designed fo r high voltage switching applications. FEATURES • Low On-state Resistance
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2SK1994
2SK1994
IEI-1209)
NEC JAPAN 7915
nec 7915
TC-7915
K1994
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2SK1995
Abstract: tea 2453 MEI-1202 TEA-1035 transistor 2sk1995
Text: DATA SHEET NEC MOS FIELD EFFECT POWER TRANSISTOR 2SK1995 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION The 2SK1995 is N-channel M O S Field Effect Transistor designed fo r high voltage switching applications. FEATURES • Low On-state Resistance
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2SK1995
IEI-1209)
tea 2453
MEI-1202
TEA-1035
transistor 2sk1995
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nec 7905
Abstract: 2SK1953 7905 Nec TC-7905 applications OF IC 7905 TC-2447
Text: DATA SHEET NEC MOS FIELD EFFECT POWER TRANSISTOR 2SK1953 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION The 2SK1953 is N -channel M O S Field Effect Transistor designed fo r high voltage switching applications. FEATURES • Low On-state Resistance
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2SK1953
2SK1953
IEI-1209)
nec 7905
7905 Nec
TC-7905
applications OF IC 7905
TC-2447
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2SK1993
Abstract: No abstract text available
Text: DATA SHEET MOS FIELD EFFECT POWER TRANSISTOR i 2SK1992/2SK1993 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION The 2SK1992/2SK1993 is N-channel MOS Field Effect Transistor PACKAGE DIMENSIONS in m illim eters designed fo r high voltage switching applications.
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OCR Scan
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2SK1992/2SK1993
2SK1992/2SK1993
IEI-1209)
2SK1993
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2sb504
Abstract: KPL 3009 2SB502 BLY34 germanium BF316A BSX12 2SD716, 2SB686 35W amplifiers bf197 acy52
Text: TRANSISTOR DATA TABLES Other Titles of Interest B P 85 International Transistor Equivalents Guide B P286 A R eferen ce G uide to Basic Electronics Terms BP287 A R eferen ce G uide to Practical Electronics Terms n TRANSISTOR DATA TABLES by Hans-Gunther Steidle
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sx3704
Abstract: AP239 Transistor 80139 8C547 6C131C IN2222A 2N50B 2N2064 radio AC176 AC126 sft353
Text: INTERNATIONAL TRANSISTOR EQUIVALENTS GUIDE A LSO BY THE S A M E AUTHOR BP108 International Diode Equivalents Guide BP140 Digital IC Equivalents and Pin Connections BP141 Linear IC Equivalents and Pin Connections ALSO OF INTEREST BP234 Transistor Selector Guide
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700 v power transistor
Abstract: SB07
Text: p Discrete Devices for Video Cameras Complex Type Transistor + Schottky Barrier Diode Transistor Type Package No. FP101 Pc m PCP4 V C iO lc (V) (A) 25 2.0 v CE(sat) FP301 PCP4 2/100 1.1* 1.5/75 0.6 50 (V) 0.5 500 3.0 25 2.0 2/500 1.5/30 140 to 2/100 560
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FP101
2SB1121
SB05-05CP
2SB1396
SB07-03C
2SD1621
SB07-03C
FP102
FP301
250mm2
700 v power transistor
SB07
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Untitled
Abstract: No abstract text available
Text: TOSHIBA Discrete Semiconductors 2SK1928 Field Effect Transistor Silicon N Channel MOSType itMOS II High Speed, High Current Switching Applications Features • Low Drain-Source ON Resistance ' ^DS(ON) = 0.7Q (Typ.) • High Forward Transfer Admittance - lYfSl= 10S (Typ.)
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2SK1928
0021fc
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2SK192A
Abstract: No abstract text available
Text: TOSHIBA 2SK192A TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL JUNCTION TYPE 2 SK19 2A Unit in mm FM TUNER APPLICATIONS VHF BAND AM PLIFIER APPLICATIONS 0.55MAX. 0.4 CHARACTERISTIC Gate-Drain Voltage Gate Current Drain Power Dissipation Junction Temperature
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2SK192A
100MHz)
55MAX.
100MHz
2SK192A
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Untitled
Abstract: No abstract text available
Text: TOSHIBA 2SK192A TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL JUNCTION TYPE 2 SK19 2A Unit in mm FM TUNER APPLICATIONS VHF BAND AM PLIFIER APPLICATIONS 0.55MAX. 0.4 CHARACTERISTIC Gate-Drain Voltage Gate Current Drain Power Dissipation Junction Temperature
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OCR Scan
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2SK192A
55MAX.
100MHz)
100MHz
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PDF
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nec 7912
Abstract: TRANSISTOR 7912 2SK1988 2SK1989 MEI-1202 TEA-1035 TC-7912
Text: Notice: You cannot copy or search for text in this PDF file, because this PDF _ file is converted from the scanned image of printed materials._ P1 98.2 DATA SHEET ,r NEC - » - MOS FIELD EFFECT POWER TRANSISTOR 2SK1988, 1989
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2SK1988,
2SK1988
2SK1989
nec 7912
TRANSISTOR 7912
MEI-1202
TEA-1035
TC-7912
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2SK1913
Abstract: BTB 600 BR BTb 600
Text: TOSHIBA Discrete Semiconductors 2SK1913 Field Effect Transistor Unit in mm Silicon N Channel MOSType c-MOS III.5 High Speed, High Current Switching Applications Features • Low Drain-Source ON Resistance " Rds(ON) = 0.9H (Typ.) • High Forward Transfer Admittance
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2SK1913
100jiA
20kii)
D021LÃ
BTB 600 BR
BTb 600
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