LMBT4401WT1G
Abstract: 1N916 LMBT4401LT1 LMBT4401LT1G
Text: LESHAN RADIO COMPANY, LTD. General Purpose Transistor • We declare that the material of product compliance with RoHS requirements. LMBT4401WT1G ORDERING INFORMATION Device Marking Shipping 3 LMBT4401WT1G 2X 3000/Tape & Reel LMBT4401WT3G 2X 10000/Tape & Reel
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LMBT4401WT1G
3000/Tape
LMBT4401WT3G
10000/Tape
SC-70
LMBT4401WT1G
1N916
LMBT4401LT1
LMBT4401LT1G
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LMBT4401LT1G
Abstract: 1N916 LMBT4401LT1
Text: LESHAN RADIO COMPANY, LTD. General Purpose Transistor • We declare that the material of product compliance with RoHS requirements. LMBT4401LT1G ORDERING INFORMATION Device Marking Shipping 3 LMBT4401LT1G 2X 3000/Tape & Reel LMBT4401LT3G 2X 10000/Tape & Reel
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LMBT4401LT1G
3000/Tape
LMBT4401LT3G
10000/Tape
OT-23
LMBT4401LT1G
1N916
LMBT4401LT1
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Untitled
Abstract: No abstract text available
Text: LESHAN RADIO COMPANY, LTD. General Purpose Transistor • We declare that the material of product compliance with RoHS requirements. LMBT4401WT1G ORDERING INFORMATION Device Marking Shipping 3 LMBT4401WT1G 2X 3000/Tape & Reel LMBT4401WT3G 2X 10000/Tape & Reel
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LMBT4401WT1G
3000/Tape
LMBT4401WT3G
10000/Tape
SC-70
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Untitled
Abstract: No abstract text available
Text: LESHAN RADIO COMPANY, LTD. General Purpose Transistor • Pb−Free Package May be Available. The G−Suffix Denotes a Pb−Free Lead Finish LMBT4401LT1G ORDERING INFORMATION Device Marking Shipping 3 LMBT4401LT1G 2X 3000/Tape & Reel LMBT4401LT3G 2X 10000/Tape & Reel
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LMBT4401LT1G
3000/Tape
LMBT4401LT3G
10000/Tape
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2X transistor sot 353
Abstract: SOT-353 Silicon NPN Epitaxial Planar Type SRC1207 SUR521H marking code GI
Text: SUR521H Semiconductor Epitaxial Planar Type NPN Silicon Transistor Description • Digital transistor Features • Two SRC1207 chips in SOT-353 package • With built-in bias resistors Ordering Information Type NO. Marking SUR521H Package Code 2X SOT-353 Outline Dimensions
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SUR521H
SRC1207
OT-353
OT-353
KST-5007-000
2X transistor sot 353
SOT-353
Silicon NPN Epitaxial Planar Type
SUR521H
marking code GI
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Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD SOT-23 Plastic-Encapsulate Transistors MMBT4401 TRANSISTOR NPN SOT-23 FEATURES Switching transistor 1. BASE 2. EMITTER MARKING: MMBT4401=2X 3. COLLECTOR MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
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OT-23
MMBT4401
OT-23
MMBT4401
-55to
150mA
150mA,
100MHz
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MMBT4401
Abstract: marking 2X SOT23
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD SOT-23 Plastic-Encapsulate Transistors MMBT4401 TRANSISTOR NPN SOT-23 FEATURES Switching transistor 1. BASE 2. EMITTER MARKING: MMBT4401=2X 3. COLLECTOR MAXIMUM RATINGS (TA=25℃ unless otherwise noted)
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OT-23
MMBT4401
OT-23
MMBT4401
-55to
150mA
150mA,
100MHz
marking 2X SOT23
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SMD transistor 2x sot 23
Abstract: CMBT4401 TRANSISTOR SMD 2X K
Text: Continental Device India Limited An ISO/TS16949 and ISO 9001 Certified Company SOT-23 Formed SMD Package CMBT4401 SILICON PLANAR EPITAXIAL TRANSISTOR N–P–N transistor Marking CMBT4401 = 2X PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm Pin configuration
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ISO/TS16949
OT-23
CMBT4401
C-120
SMD transistor 2x sot 23
CMBT4401
TRANSISTOR SMD 2X K
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SMD transistor 2x sot 23
Abstract: TRANSISTOR SMD 2X K CMBT4401
Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package CMBT4401 SILICON PLANAR EPITAXIAL TRANSISTOR N–P–N transistor Marking CMBT4401 = 2X PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm Pin configuration
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OT-23
CMBT4401
C-120
SMD transistor 2x sot 23
TRANSISTOR SMD 2X K
CMBT4401
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2SC2904
Abstract: 2sc2904 TRANSISTOR transistor 835 H22A
Text: 2SC2904 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI 2SC2904 is a silicon epitaxial plana type transistor designed for high power amplifiers in HF band. PACKAGE STYLE .500 6L FLG A C FEATURES: 2x Ø N • Internal Input Matching Network • PG = 11.5 dB at 1000 W/30 MHz
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2SC2904
2SC2904
2sc2904 TRANSISTOR
transistor 835
H22A
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mmbt4401
Abstract: marking 2x sot23
Text: MMBT4401 SOT-23 Transistor NPN 1. BASE 2. EMITTER SOT-23 3. COLLECTOR Features Switching transistor MARKING: MMBT4401=2X MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage
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MMBT4401
OT-23
OT-23
MMBT4401
-55to
150mA
150mA,
100MHz
marking 2x sot23
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SMD transistor 2x sot 23
Abstract: CMBT4401
Text: IS/ISO 9002 Lic# QSC/L- 000019.2 Continental Device India Limited IS / IECQC 700000 IS / IECQC 750100 An IS/ISO 9002 and IECQ Certified Manufacturer SOT-23 Formed SMD Package CMBT4401 SILICON PLANAR EPITAXIAL TRANSISTOR N–P–N transistor Marking CMBT4401 = 2X
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OT-23
CMBT4401
C-120
SMD transistor 2x sot 23
CMBT4401
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BLV25
Abstract: No abstract text available
Text: BLV25 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: PACKAGE STYLE .500 6L FLG A C The ASI BLV25 is a 28 V silicon NPN power transistor designed primarily for VHF FM broadcast transmitters. 1 2 2x Ø N FULL R D FEATURES: 3 • 28 V operation • PG = 10 dB at 175 W/108 MHz
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BLV25
BLV25
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ASI10531
Abstract: ASI2223-4
Text: ASI2223-4 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: PACKAGE STYLE .400 2NL FLG The ASI 2223-4 is a common Base transistor capable of providing 4 W, ClassC output power over the band 2220-2300 MHz. A C .025 x 45° 4x .062 x 45° 2X B B ØD C E F E G FEATURES:
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ASI2223-4
ASI10531
ASI2223-4
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BLV25
Abstract: No abstract text available
Text: BLV25 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: PACKAGE STYLE .500 6L FLG A C The ASI BLV25 is a 28 V silicon NPN power transistor designed primarily for VHF FM broadcast transmitters. 2 1 2x Ø N FU LL R D FEATURES: 4 3 • 28 V operation • PG = 1.0 dB at 175 W/108 MHz
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BLV25
BLV25
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sd1441
Abstract: SD-1441
Text: SD1441 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI SD1441 is a12.5 V epitaxial silicon NPN plannar transistor. Designed primarily for VHF communication in the 175 MHz frequency. PACKAGE STYLE .500 6L FLG A C FEATURES: 1 3 2x Ø N FULL R • 175 MHz 12.5 V
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SD1441
SD1441
SD-1441
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2SC2782
Abstract: NPN 2SC2782 transistor 2sc2782
Text: 2SC2782 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI 2SC2782 is a12.5 V epitaxial silicon NPN transistor. Designed primarily for VHF power amplifer application up to175 MHz band. PACKAGE STYLE .500 6L FLG A C 1 3 2x Ø N FULL R D FEATURES: 2 • 175 MHz 12.5 V
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2SC2782
2SC2782
to175
NPN 2SC2782
transistor 2sc2782
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MRF247
Abstract: amplifier mrf247 865 RF transistor
Text: MRF247 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI MRF247 is Designed for 12.5 V VHF large signal amplifier applications up to 175 MHz. PACKAGE STYLE .500 6L FLG A C FEATURES: 2x Ø N • Internal Input Matching Network • PG = 7.0 dB at 75 W/175 MHz
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MRF247
MRF247
amplifier mrf247
865 RF transistor
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Untitled
Abstract: No abstract text available
Text: TVV030 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI TVV030 is Designed for Television Band III Applications up to 225 MHz. PACKAGE STYLE .500 6L FLG A C FEATURES: 2x ØN • Common Emitter • PG = 7.5 dB at 30 W/225 MHz • Omnigold Metalization System
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TVV030
TVV030
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MRF648
Abstract: MRF648 applications MRF648 Data Sheet MRF648 equivalent
Text: MRF648 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI MRF648 is Designed for 12.5 V UHF large signal amplifier applications up to 512 MHz. PACKAGE STYLE .500 6L FLG A C FEATURES: 2x Ø N • Internal Input Matching Network • PG = 4.4 dB at 60 W/470 MHz
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MRF648
MRF648
MRF648 applications
MRF648 Data Sheet
MRF648 equivalent
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AVF250
Abstract: ASI10571
Text: AVF250 NPN SILICON RF POWER TRANSISTOR PACKAGE STYLE .400 2NL FLG DESCRIPTION: A .0 2 5 x 4 5 ° 4 x .0 6 2 x 4 5 ° 2X B The ASI AVF250 is a high power ClassC transistor designed for IFF/BME/TACAN applications in 1025-1150 MHz range. ØD C E F G H FEATURES:
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AVF250
AVF250
ASI10571
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TBA950
Abstract: TBA950-2X TBA 950 2x 2X transistor TBA9502X Phase Control Circuit RC oscillator in inverter circuit diagram filter stage flyback 50hz oscillator inverter Circuit diagram 15625-Hz
Text: TBA950:2X APLESSEY W Sem iconductors, FOR MAINTENANCE PURPOSES ONLY: DO NOT USE FOR NEW DESIGNS TBA950: 2X LINE OSCILLATOR COMBINATION The T B A 9 5 0 :2 X is a monolithic integrated circuit for pulse separation and line synchronisation in TV receivers with transistor output stages.
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TBA950
TBA950:
TBA950-2X
TBA 950 2x
2X transistor
TBA9502X
Phase Control Circuit
RC oscillator in inverter circuit diagram
filter stage flyback
50hz oscillator inverter Circuit diagram
15625-Hz
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Untitled
Abstract: No abstract text available
Text: CMBT4401 SILICON PLANAR EPITAXIAL TRANSISTOR N -P-N transistor Marking CMBT4401 = 2X PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm 0.14 0.70 0.50 ’S 1 Pin configuration 1.4 1.2 1 = BASE 2 = EMITTER 3 = COLLECTOR J R0.1 .004 ' <l< R 0.0S 0.12 W (.002) 0.02
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CMBT4401
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Untitled
Abstract: No abstract text available
Text: CMBT4401 SILICON PLAN AR EPITAXIAL TRANSISTOR N-P-N transistor Marking CMBT4401 = 2X PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm 3.0 2.8 0.14 0.48 0.38 3 Pin configuration 2.6 1 = BASE 2 = EMITTER 3 « COLLECTOR 2.4 _L02 0.89* 2.00 0.60 0.40 1.80 ABSOLUTE MAXIMUM RATINGS
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CMBT4401
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