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    TRANSISTOR 2XW Search Results

    TRANSISTOR 2XW Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR 2XW Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: BLP15M7160P Power LDMOS transistor Rev. 2 — 10 June 2014 Product data sheet 1. Product profile 1.1 General description A 160W LDMOS RF power transistor for broadcast transmitter and industrial applications. The transistor is suitable for the frequency range HF to 1500 MHz. The


    Original     		PDF BLP15M7160P

    Untitled

    Abstract: No abstract text available
    Text: BLP15M7160P Power LDMOS transistor Rev. 1 — 10 January 2014 Objective data sheet 1. Product profile 1.1 General description A 160W LDMOS RF power transistor for broadcast transmitter and industrial applications. The transistor is suitable for the frequency range HF to 1500 MHz. The


    Original     		PDF BLP15M7160P

    Untitled

    Abstract: No abstract text available
    Text: BLF644P Broadband power LDMOS transistor Rev. 2 — 27 June 2014 Product data sheet 1. Product profile 1.1 General description A 70 W LDMOS RF power transistor for broadcast transmitter, communications and industrial applications. The transistor is suitable for the frequency range HF to 1300 MHz.


    Original     		PDF BLF644P

    Untitled

    Abstract: No abstract text available
    Text: BLF647PS Broadband power LDMOS transistor Rev. 2 — 18 November 2013 Product data sheet 1. Product profile 1.1 General description A 200 W LDMOS RF power transistor for broadcast transmitter and industrial applications. The transistor is suitable for the frequency range HF to 1500 MHz. The


    Original     		PDF BLF647PS

    Untitled

    Abstract: No abstract text available
    Text: BLF644P Broadband power LDMOS transistor Rev. 1 — 11 June 2013 Objective data sheet 1. Product profile 1.1 General description A 70 W LDMOS RF power transistor for broadcast transmitter and industrial applications. The transistor is suitable for the frequency range HF to 1300 MHz. The excellent


    Original     		PDF BLF644P

    Untitled

    Abstract: No abstract text available
    Text: BLF8G27LS-100V Power LDMOS transistor Rev. 1 — 17 August 2012 Objective data sheet 1. Product profile 1.1 General description 100 W LDMOS power transistor with improved video bandwidth for base station applications at frequencies from 2500 MHz to 2700 MHz.


    Original     		PDF BLF8G27LS-100V

    BLC8G27LS-160AV

    Abstract: BLC8G27LS sot1275
    Text: BLC8G27LS-160AV Power LDMOS transistor Rev. 1 — 23 May 2013 Objective data sheet 1. Product profile 1.1 General description 160 W LDMOS packaged asymmetrical Doherty power transistor for base station applications at frequencies from 2496 MHz to 2690 MHz.


    Original     		PDF BLC8G27LS-160AV BLC8G27LS-160AV BLC8G27LS sot1275

    TRANSISTOR CW 7805

    Abstract: No abstract text available
    Text: BLF8G10LS-300P Power LDMOS transistor Rev. 2 — 17 December 2013 Product data sheet 1. Product profile 1.1 General description 300 W LDMOS power transistor for base station applications at frequencies from 700 MHz to 1000 MHz. Table 1. Typical performance


    Original     		PDF BLF8G10LS-300P TRANSISTOR CW 7805

    Untitled

    Abstract: No abstract text available
    Text: BLC8G27LS-100AV Power LDMOS transistor Rev. 1 — 25 February 2014 Objective data sheet 1. Product profile 1.1 General description 100 W LDMOS packaged asymmetrical Doherty power transistor for base station applications at frequencies from 2490 MHz to 2690 MHz.


    Original     		PDF BLC8G27LS-100AV

    Untitled

    Abstract: No abstract text available
    Text: BLP7G07S-140P Power LDMOS transistor Rev. 2 — 9 October 2012 Objective data sheet 1. Product profile 1.1 General description 140 W LDMOS power transistor for base station applications at frequencies from 700 MHz to 1000 MHz. Table 1. Typical performance


    Original     		PDF BLP7G07S-140P

    Untitled

    Abstract: No abstract text available
    Text: BLF8G27LS-100V Power LDMOS transistor Rev. 2 — 3 December 2012 Product data sheet 1. Product profile 1.1 General description 100 W LDMOS power transistor with improved video bandwidth for base station applications at frequencies from 2500 MHz to 2700 MHz.


    Original     		PDF BLF8G27LS-100V

    Untitled

    Abstract: No abstract text available
    Text: BLF8G38LS-75V Power LDMOS transistor Rev. 2 — 9 January 2014 Preliminary data sheet 1. Product profile 1.1 General description 75 W LDMOS power transistor with improved video bandwidth for base station applications at frequencies from 3400 MHz to 3800 MHz.


    Original     		PDF BLF8G38LS-75V

    Untitled

    Abstract: No abstract text available
    Text: BLC8G27LS-180AV Power LDMOS transistor Rev. 1 — 1 July 2014 Objective data sheet 1. Product profile 1.1 General description 180 W LDMOS packaged asymmetrical Doherty power transistor for base station applications at frequencies from 2496 MHz to 2690 MHz.


    Original     		PDF BLC8G27LS-180AV

    Untitled

    Abstract: No abstract text available
    Text: BLF8G20LS-230V Power LDMOS transistor Rev. 1 — 7 November 2013 Preliminary data sheet 1. Product profile 1.1 General description 230 W LDMOS power transistor with improved video bandwidth for base station applications at frequencies from 1800 MHz to 2000 MHz.


    Original     		PDF BLF8G20LS-230V

    Untitled

    Abstract: No abstract text available
    Text: BLF8G20LS-200V Power LDMOS transistor Rev. 4 — 21 October 2013 Product data sheet 1. Product profile 1.1 General description 200 W LDMOS power transistor with improved video bandwidth for base station applications at frequencies from 1800 MHz to 2000 MHz.


    Original     		PDF BLF8G20LS-200V

    Untitled

    Abstract: No abstract text available
    Text: BLF8G38LS-75V Power LDMOS transistor Rev. 1 — 4 November 2013 Objective data sheet 1. Product profile 1.1 General description 75 W LDMOS power transistor with improved video bandwidth for base station applications at frequencies from 3400 MHz to 3800 MHz.


    Original     		PDF BLF8G38LS-75V

    Untitled

    Abstract: No abstract text available
    Text: BLC8G27LS-240AV Power LDMOS transistor Rev. 1 — 4 November 2013 Objective data sheet 1. Product profile 1.1 General description 240 W LDMOS packaged asymmetric Doherty power transistor for base station applications at frequencies from 2500 MHz to 2700 MHz.


    Original     		PDF BLC8G27LS-240AV

    Untitled

    Abstract: No abstract text available
    Text: BLF8G27LS-100V Power LDMOS transistor Rev. 3 — 29 January 2013 Product data sheet 1. Product profile 1.1 General description 100 W LDMOS power transistor with improved video bandwidth for base station applications at frequencies from 2500 MHz to 2700 MHz.


    Original     		PDF BLF8G27LS-100V

    Untitled

    Abstract: No abstract text available
    Text: BLP10H610 Broadband LDMOS driver transistor Rev. 1 — 20 January 2014 Objective data sheet 1. Product profile 1.1 General description A 10 W plastic LDMOS power transistor for broadcast transmitter and ISM applications at frequencies from HF to 1400 MHz.


    Original     		PDF BLP10H610 2002/95/EC,

    Untitled

    Abstract: No abstract text available
    Text: BLF8G20LS-230V Power LDMOS transistor Rev. 2 — 21 February 2014 Product data sheet 1. Product profile 1.1 General description 230 W LDMOS power transistor with improved video bandwidth for base station applications at frequencies from 1800 MHz to 2000 MHz.


    Original     		PDF BLF8G20LS-230V

    Untitled

    Abstract: No abstract text available
    Text: BLF8G20LS-160V Power LDMOS transistor Rev. 1 — 5 March 2014 Objective data sheet 1. Product profile 1.1 General description 160 W LDMOS power transistor with improved video bandwidth for base station applications at frequencies from 1800 MHz to 2000 MHz.


    Original     		PDF BLF8G20LS-160V

    Untitled

    Abstract: No abstract text available
    Text: BLF8G10LS-160V Power LDMOS transistor Rev. 2 — 24 October 2012 Product data sheet 1. Product profile 1.1 General description 160 W LDMOS power transistor with improved video bandwidth for base station applications at frequencies from 925 MHz to 960 MHz.


    Original     		PDF BLF8G10LS-160V

    Untitled

    Abstract: No abstract text available
    Text: BLP10H610 Broadband LDMOS driver transistor Rev. 3 — 25 September 2014 Product data sheet 1. Product profile 1.1 General description A 10 W plastic LDMOS power transistor for broadcast transmitter and ISM applications at frequencies from HF to 1400 MHz.


    Original     		PDF BLP10H610

    Untitled

    Abstract: No abstract text available
    Text: BLF8G09LS-400PW; BLF8G09LS-400PGW Power LDMOS transistor Rev. 2 — 20 December 2013 Preliminary data sheet 1. Product profile 1.1 General description 400 W LDMOS power transistor for base station applications at frequencies from 716 MHz to 960 MHz. Table 1.


    Original     		PDF BLF8G09LS-400PW; BLF8G09LS-400PGW BLF8G09LS-400PW 8G09LS-400PGW