Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    TRANSISTOR 30A 600V Search Results

    TRANSISTOR 30A 600V Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    GN6030V4LSTL-E Renesas Electronics Corporation IGBT 600V 30A Visit Renesas Electronics Corporation
    RJK6018DPK-00#T0 Renesas Electronics Corporation Nch Single Power Mosfet 600V 30A 235Mohm To-3P Visit Renesas Electronics Corporation
    RJK6018DPM-00#T1 Renesas Electronics Corporation Nch Single Power Mosfet 600V 30A 235Mohm To-3Pfm Visit Renesas Electronics Corporation
    RJK60S7DPQ-E0#T2 Renesas Electronics Corporation 600V - 30A - Sj MOSFET High Speed Power Switching Visit Renesas Electronics Corporation
    RJL6020DPK-00#T0 Renesas Electronics Corporation Nch Single Power Mosfet 600V 30A 210Mohm To-3P Visit Renesas Electronics Corporation

    TRANSISTOR 30A 600V Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Darlington 30A

    Abstract: QCA30B60 30A high speed diode QCA30B40 QCB30A40 QCB30A60
    Text: TRANSISTOR MODULE QCA30B/QCB30A40/60 UL;E76102 M QCA30B and QCB30A are dual Darlington power transistor modules which have series-connected high speed, high power Darlington transistors. Each transistor has a reverse paralleled fast recovery diode. IC 30A, VCEX 400/600V


    Original     		PDF QCA30B/QCB30A40/60 E76102 QCA30B QCB30A 400/600V QCA30B40 QCA30B60 QCB30A40 QCB30A60 QCA30B40 Darlington 30A QCA30B60 30A high speed diode QCB30A60

    Untitled

    Abstract: No abstract text available
    Text: AP30G120W Pb Free Plating Product Advanced Power Electronics Corp. N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR Features 1100V VCES High speed switching Low Saturation Voltage VCE sat =3.0V@IC=30A Industry Standard TO-3P Package 30A IC C G RoHS Compliant C


    Original     		PDF AP30G120W Fig11.

    Untitled

    Abstract: No abstract text available
    Text: AP30G120SW Pb Free Plating Product Advanced Power Electronics Corp. N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR WITH FRD. Features High speed switching VCES Low Saturation Voltage VCE sat =3.0V@IC=30A IC 1200V 30A C CO-PAK, IGBT with FRD RoHS Compliant G C


    Original     		PDF AP30G120SW Fig11.

    Untitled

    Abstract: No abstract text available
    Text: AP30G120ASW RoHS-compliant Product Advanced Power Electronics Corp. N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR WITH FRD. Features High Speed Switching VCES Low Saturation Voltage V CE sat =2.9V@IC=30A CO-PAK, IGBT With FRD RoHS Compliant IC 1200V 30A C C


    Original     		PDF AP30G120ASW Fig11.

    Untitled

    Abstract: No abstract text available
    Text: V23990-P704-F-PM final data sheet flow 90PACK 1 600V/ 30A V23990-P704-F-01-14 Maximum Ratings / Höchstzulässige Werte Parameter Condition Symbol Datasheet values Unit max. Transistor Inverter Transistor Wechselrichter Collector-emitter break down voltage


    Original     		PDF V23990-P704-F-PM 90PACK V23990-P704-F-01-14

    AP30G120SW

    Abstract: AP30G120 ictc 500V N-Channel IGBT TO-3P
    Text: AP30G120SW Pb Free Plating Product Advanced Power Electronics Corp. N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR WITH FRD. Features ▼ High speed switching VCES ▼ Low Saturation Voltage VCE sat =3.0V@IC=30A IC 1200V 30A C ▼ CO-PAK, IGBT with FRD ▼ RoHS Compliant


    Original     		PDF AP30G120SW Fig11. AP30G120SW AP30G120 ictc 500V N-Channel IGBT TO-3P

    v120t

    Abstract: AP30G120W
    Text: AP30G120W Pb Free Plating Product Advanced Power Electronics Corp. N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR Features VCES 1200V IC ▼ High speed switching ▼ Low Saturation Voltage VCE sat =3.0V@IC=30A ▼ Industry Standard TO-3P Package 30A C G ▼ RoHS Compliant


    Original     		PDF AP30G120W Fig11. v120t AP30G120W

    ap30g120w

    Abstract: No abstract text available
    Text: AP30G120W Pb Free Plating Product Advanced Power Electronics Corp. N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR Features VCES 1100V 30A IC ▼ High speed switching ▼ Low Saturation Voltage VCE sat =3.0V@IC=30A ▼ Industry Standard TO-3P Package C G ▼ RoHS Compliant


    Original     		PDF AP30G120W Fig11. ap30g120w

    Untitled

    Abstract: No abstract text available
    Text: Advanced Power Electronics Corp. AP30G120W-HF-3 N-Channel Insulated Gate Bipolar Power Transistor VCES 1200V High Speed Switching C Low Saturation Voltage 30A IC Typical VCE sat = 3.0V at IC=30A RoHS-compliant halogen-free TO-3P package G C C G E TO-3P E


    Original     		PDF AP30G120W-HF-3 100oC AP30G120 30G120W

    Transistor AC 187

    Abstract: E80276 QM30HQ-24 high power transistor
    Text: MITSUBISHI TRANSISTOR MODULES QM30HQ-24 DRIVE USE FOR HIGH POWER TRANSISTOR INSULATED TYPE QM30HQ-24 • • • • • IC Collector current . 30A VCEX Collector-emitter voltage . 1200V hFE DC current gain. 5


    Original     		PDF QM30HQ-24 E80276 E80271 Transistor AC 187 E80276 QM30HQ-24 high power transistor

    Untitled

    Abstract: No abstract text available
    Text: Advanced Power Electronics Corp. AP30G120SW-HF-3 N-Channel Insulated Gate Bipolar Power Transistor High Speed Switching V CES 1200V Low Saturation Voltage C tab 30A IC Typical VCE(sat)= 3.0V at IC=30A G Internal "Co-Pak" Fast Recovery Diode C C RoHS-compliant, halogen-free TO-3P package


    Original     		PDF AP30G120SW-HF-3 AP30G120S 30G120SW

    30G120ASW

    Abstract: No abstract text available
    Text: Advanced Power Electronics Corp. AP30G120ASW-HF-3 N-Channel Insulated Gate Bipolar Power Transistor High Speed Switching V CES 1200V Low Saturation Voltage C tab 30A IC Typical VCE(sat)= 2.9V at IC=30A G Internal "Co-Pak" Fast Recovery Diode C C RoHS-compliant, halogen-free TO-3P package


    Original     		PDF AP30G120ASW-HF-3 AP30G120AS 30G120ASW 30G120ASW

    80uS

    Abstract: qm30tx-hb E80276
    Text: MITSUBISHI TRANSISTOR MODULES QM30TX-HB MEDIUM POWER SWITCHING USE INSULATED TYPE QM30TX-HB • • • • • IC Collector current . 30A VCEX Collector-emitter voltage . 600V hFE DC current gain. 750


    Original     		PDF QM30TX-HB E80276 E80271 80uS qm30tx-hb E80276

    QM30DY-H

    Abstract: E80276
    Text: MITSUBISHI TRANSISTOR MODULES QM30DY-H MEDIUM POWER SWITCHING USE INSULATED TYPE QM30DY-H • • • • • IC Collector current . 30A VCEX Collector-emitter voltage . 600V hFE DC current gain. 75


    Original     		PDF QM30DY-H E80276 E80271 QM30DY-H E80276

    8206a

    Abstract: Mitsubishi Electric Transistor MODULES Mitsubishi transistor QM30t 30a diode
    Text: MITSUBISHI TRANSISTOR MODULES QM30TX-HB MEDIUM POWER SWITCHING USE I _ INSULATED TYPE j ! OM30TX-HB i | * * * * * lc Collector current. 30A V cex Collector-emitter voltage.600V hFE


    OCR Scan     		PDF QM30TX-HB OM30TX-HB E80276 E80271 8206a Mitsubishi Electric Transistor MODULES Mitsubishi transistor QM30t 30a diode

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI TRANSISTOR MODULES QM30HQ-24 DRIVE USE FOR HIGH POWER TRANSISTOR INSULATED TYPE QM30HQ-24 Ic Collector current. 30A Vcex Collector-emitter voltage 1200V hFE DC current gain. 5 Insulated Type


    OCR Scan     		PDF QM30HQ-24 E80276 E80271

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI TRANSISTOR MODULES QM30DY-HB MEDIUM POWER SWITCHING USE INSULATED TYPE QM30DY-HB Ic Collector current. 30A Vcex Collector-emitter voltage.600V hFE DC current gain. 750 Insulated Type


    OCR Scan     		PDF QM30DY-HB E80276 E80271 60mA-

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI TRANSISTOR MODULES QM30TX-HB MEDIUM POWER SWITCHING USE INSULATED TYPE QM30TX-HB Ic Collector current. 30A Collector-emitter voltage.600V hFE DC current gain. 750 Insulated Type UL Recognized


    OCR Scan     		PDF QM30TX-HB E80276 E80271

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI TRANSISTOR MODULES QM30TF-HB MEDIUM POWER SWITCHING USE INSULATED TYPE QM30TF-HB Ic Collector current. 30A Vcex Collector-emitter voltage.600V hFE DC current gain. 750 Insulated Type


    OCR Scan     		PDF QM30TF-HB E80276 E80271

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI TRANSISTOR MODULES QM30HA-H MEDIUM POWER SWITCHING USE INSULATED TYPE QM30HA-H Ic Collector current. 30A Vcex Collector-emitter voltage.600V hFE DC current gain. 75 Insulated Type


    OCR Scan     		PDF QM30HA-H E80276 E80271

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI TRANSISTOR MODULES QM30CY-H MEDIUM POWER SWITCHING USE INSULATED TYPE Q M 30CY-H Ic Collector current. 30A Vcex Collector-emitter voltage.600V hFE DC current gain. 75 Insulated Type


    OCR Scan     		PDF QM30CY-H 30CY-H E80276 E80271

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI TRANSISTOR MODULES QM30TX-H MEDIUM POWER SWITCHING USE INSULATED TYPE Q M 30TX-H Ic Collector current. 30A Vcex Collector-emitter voltage.600V hFE DC current gain. 75 Insulated Type


    OCR Scan     		PDF QM30TX-H 30TX-H E80276 E80271

    QM30DY-H

    Abstract: No abstract text available
    Text: MITSUBISHI TRANSISTOR MODULES QM30DY-H MEDIUM POWER SWITCHING USE INSULATED TYPE QM30DY-H • 1C • V cex • hFE Collector current. 30A Collector-emitter voltage. 600V DC current gain.75


    OCR Scan     		PDF QM30DY-H E80276 E80271 QM30DY-H

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI TRANSISTOR MODULES QM30HA-HB MEDIUM POWER SWITCHING USE INSULATED TYPE Q M 30HA-HB Ic Collector current. 30A Vcex Collector-emitter voltage.600V hFE DC current gain. 750 Insulated Type


    OCR Scan     		PDF QM30HA-HB 30HA-HB E80276 E80271