TRANSISTOR 3400 Search Results

TRANSISTOR 3400 Result Highlights (5)

Part	Manufacturer	Description
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns
XPQR8308QB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL
XPQ1R00AQB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL
TK190U65Z	Toshiba Electronic Devices & Storage Corporation	MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL

TRANSISTOR 3400 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
Untitled Abstract: No abstract text available Text: BLF8G38LS-75V Power LDMOS transistor Rev. 2 — 9 January 2014 Preliminary data sheet 1. Product profile 1.1 General description 75 W LDMOS power transistor with improved video bandwidth for base station applications at frequencies from 3400 MHz to 3800 MHz.	Original	PDF	BLF8G38LS-75V
Untitled Abstract: No abstract text available Text: BLF8G38LS-75V Power LDMOS transistor Rev. 1 — 4 November 2013 Objective data sheet 1. Product profile 1.1 General description 75 W LDMOS power transistor with improved video bandwidth for base station applications at frequencies from 3400 MHz to 3800 MHz.	Original	PDF	BLF8G38LS-75V
Untitled Abstract: No abstract text available Text: BLF8G38LS-75V Power LDMOS transistor Rev. 3 — 1 July 2014 Product data sheet 1. Product profile 1.1 General description 75 W LDMOS power transistor with improved video bandwidth for base station applications at frequencies from 3400 MHz to 3800 MHz. Table 1.	Original	PDF	BLF8G38LS-75V
C5750X7R1H106M Abstract: 30RF35 Text: BLF6G38-100; BLF6G38LS-100 WiMAX power LDMOS transistor Rev. 01 — 11 November 2008 Product data sheet 1. Product profile 1.1 General description 100 W LDMOS power transistor for base station applications at frequencies from 3400 MHz to 3600 MHz. Table 1.	Original	PDF	BLF6G38-100; BLF6G38LS-100 ACPR885k ACPR1980k BLF6G38-100 6G38LS-100 C5750X7R1H106M 30RF35
transistor BV-1 501 Abstract: smd 501 transistor C5750X7R1H106M 30RF35 BLF6G38-50 BLF6G38LS-50 RF35 VJ1206Y104KXB Text: BLF6G38-50; BLF6G38LS-50 WiMAX power LDMOS transistor Rev. 01 — 12 February 2008 Preliminary data sheet 1. Product profile 1.1 General description 50 W LDMOS power transistor for base station applications at frequencies from 3400 MHz to 3800 MHz. Table 1.	Original	PDF	BLF6G38-50; BLF6G38LS-50 ACPR885k ACPR1980k BLF6G38-50 BLF6G38LS-50 transistor BV-1 501 smd 501 transistor C5750X7R1H106M 30RF35 RF35 VJ1206Y104KXB
TRANSISTOR j412 Abstract: J412 - TRANSISTOR SMD BLF6G38S-25 Text: BLF6G38-25; BLF6G38S-25 WiMAX power LDMOS transistor Rev. 01 — 18 February 2008 Preliminary data sheet 1. Product profile 1.1 General description 25 W LDMOS power transistor for base station applications at frequencies from 3400 MHz to 3800 MHz. Table 1.	Original	PDF	BLF6G38-25; BLF6G38S-25 ACPR885k ACPR1980k IS-95 BLF6G38-25 BLF6G38S-25 TRANSISTOR j412 J412 - TRANSISTOR SMD
Untitled Abstract: No abstract text available Text: BLF6G38-100; BLF6G38LS-100 WiMAX power LDMOS transistor Rev. 2 — 24 October 2011 Product data sheet 1. Product profile 1.1 General description 100 W LDMOS power transistor for base station applications at frequencies from 3400 MHz to 3600 MHz. Table 1. Typical performance	Original	PDF	BLF6G38-100; BLF6G38LS-100 ACPR885k ACPR1980k BLF6G38-100 6G38LS-100
Untitled Abstract: No abstract text available Text: BLF6G38-50; BLF6G38LS-50 WiMAX power LDMOS transistor Rev. 02 — 1 June 2010 Product data sheet 1. Product profile 1.1 General description 50 W LDMOS power transistor for base station applications at frequencies from 3400 MHz to 3800 MHz. Table 1. Typical performance	Original	PDF	BLF6G38-50; BLF6G38LS-50 ACPR885k ACPR1980k BLF6G38-50
BLF6G38S-25 Abstract: transistor equivalent table BDS3/3/4.6-4S2 BDS3/3/4.6-4S2-Z Text: BLF6G38-25; BLF6G38S-25 WiMAX power LDMOS transistor Rev. 3 — 11 March 2013 Product data sheet 1. Product profile 1.1 General description 25 W LDMOS power transistor for base station applications at frequencies from 3400 MHz to 3800 MHz. Table 1. Typical performance	Original	PDF	BLF6G38-25; BLF6G38S-25 ACPR885k ACPR1980k IS-95 BLF6G38-25 BLF6G38S-25 transistor equivalent table BDS3/3/4.6-4S2 BDS3/3/4.6-4S2-Z
30RF35 Abstract: BLF6G38-50 BLF6G38LS-50 C5750X7R1H106M RF35 VJ1206Y104KXB Text: BLF6G38-50; BLF6G38LS-50 WiMAX power LDMOS transistor Rev. 02 — 1 June 2010 Product data sheet 1. Product profile 1.1 General description 50 W LDMOS power transistor for base station applications at frequencies from 3400 MHz to 3800 MHz. Table 1. Typical performance	Original	PDF	BLF6G38-50; BLF6G38LS-50 ACPR885k ACPR1980k BLF6G38-50 30RF35 BLF6G38LS-50 C5750X7R1H106M RF35 VJ1206Y104KXB
TRANSISTOR J601 Abstract: gp816 RF35 J2396 J249 Text: BLF6G38-10; BLF6G38-10G WiMAX power LDMOS transistor Rev. 01 — 3 February 2009 Product data sheet 1. Product profile 1.1 General description 10 W LDMOS power transistor for base station applications at frequencies from 3400 MHz to 3600 MHz. Table 1. Typical performance	Original	PDF	BLF6G38-10; BLF6G38-10G ACPR885k ACPR1980k BLF6G38-10 BLF6G38-10G TRANSISTOR J601 gp816 RF35 J2396 J249
smd transistor 3400 Abstract: smd transistor equivalent table J412 - TRANSISTOR SMD BLF6G38S-25 C5750X7R1H106M cdma QPSK modulation Walsh pilot BLF6G38-25 C4532X7R1H475M RF35 722 smd transistor Text: BLF6G38-25; BLF6G38S-25 WiMAX power LDMOS transistor Rev. 02 — 23 December 2008 Product data sheet 1. Product profile 1.1 General description 25 W LDMOS power transistor for base station applications at frequencies from 3400 MHz to 3800 MHz. Table 1. Typical performance	Original	PDF	BLF6G38-25; BLF6G38S-25 ACPR885k ACPR1980k IS-95 BLF6G38-25 BLF6G38S-25 smd transistor 3400 smd transistor equivalent table J412 - TRANSISTOR SMD C5750X7R1H106M cdma QPSK modulation Walsh pilot C4532X7R1H475M RF35 722 smd transistor
Untitled Abstract: No abstract text available Text: BLF6G38-100; BLF6G38LS-100 WiMAX power LDMOS transistor Rev. 2 — 24 October 2011 Product data sheet 1. Product profile 1.1 General description 100 W LDMOS power transistor for base station applications at frequencies from 3400 MHz to 3600 MHz. Table 1. Typical performance	Original	PDF	BLF6G38-100; BLF6G38LS-100 ACPR885k ACPR1980k BLF6G38-100 6G38LS-100
2SA1444 equivalent Abstract: BA1F4M transistor equivalent table POWER MOS FET 2sj 2sk 2sd882 equivalent Equivalent to transistor 2sc945 2SA1206 TRANSISTOR equivalent 2SC1845 equivalent 2SK type 2SD1694 equivalent Text: CD-ROM Transistor CD-ROM X13769XJ2V0CD00 08-1 Transistor Quick Reference by Package TO–92 • TO-92 Type Transistor VCEO V ~15 ~30 ~50 ~70 ~100 ~150 ~200 ~250 2SA1376 2SA1376A 2SC3478 2SC3478A 2SA1544 ~400 IC (A) ~20 m 2SC1674 2SA1206∗∗ 2SA988 2SA992	Original	PDF	X13769XJ2V0CD00 2SA1206 2SC1674 2SA988 2SA992 2SC1841 2SC1845 2SA733 2SA990 2SC945 2SA1444 equivalent BA1F4M transistor equivalent table POWER MOS FET 2sj 2sk 2sd882 equivalent Equivalent to transistor 2sc945 2SA1206 TRANSISTOR equivalent 2SC1845 equivalent 2SK type 2SD1694 equivalent

SC15 Abstract: LTE42008R Data Handbook sc15 Text: DISCRETE SEMICONDUCTORS DATA SHEET LTE42008R NPN microwave power transistor Product specification Supersedes data of June 1992 File under Discrete Semiconductors, SC15 1997 Feb 24 Philips Semiconductors Product specification NPN microwave power transistor	Original	PDF	LTE42008R OT440A SCA53 127147/00/02/pp12 SC15 LTE42008R Data Handbook sc15
D16861 Abstract: NP60N04KUG Text: PRELIMINARY DATA SHEET MOS FIELD EFFECT TRANSISTOR NP60N04KUG SWITCHING N-CHANNEL POWER MOS FET ORDERING INFORMATION DESCRIPTION The NP60N04KUG is N-channel MOS Field Effect Transistor designed for high current switching applications. PART NUMBER PACKAGE NP60N04KUG	Original	PDF	NP60N04KUG NP60N04KUG O-263 MP-25ZK) O-263) D16861
2sk2498 Abstract: IEI-1213 MEI-1202 MF-1134 Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK2498 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION PACKAGE DIMENSIONS 2SK2498 is N-Channel MOS Field Effect Transistor designed for in millimeter high current switching applications. 10.0±0.3 FEATURES	Original	PDF	2SK2498 2SK2498 O-220 IEI-1213 MEI-1202 MF-1134
LTE42012R Abstract: No abstract text available Text: DISCRETE SEMICONDUCTORS DATA SHEET LTE42012R NPN microwave power transistor Product specification Supersedes data of June 1992 1997 Feb 21 Philips Semiconductors Product specification NPN microwave power transistor LTE42012R FEATURES PINNING - SOT440A • Interdigitated structure provides high emitter efficiency	Original	PDF	LTE42012R OT440A SCA53 127147/00/02/pp12 LTE42012R
LTE42005S Abstract: No abstract text available Text: DISCRETE SEMICONDUCTORS DATA SHEET LTE42005S NPN microwave power transistor Product specification Supersedes data of June 1992 1997 Feb 21 Philips Semiconductors Product specification NPN microwave power transistor LTE42005S FEATURES PINNING - SOT440A • Diffused emitter ballasting resistors provide excellent	Original	PDF	LTE42005S OT440A LTE42005S
d1740 Abstract: NP55N04SUG Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR NP55N04SUG SWITCHING N-CHANNEL POWER MOSFET ORDERING INFORMATION DESCRIPTION The NP55N04SUG is N-channel MOS Field Effect Transistor designed for high current switching applications. PART NUMBER PACKAGE NP55N04SUG TO-252 MP-3ZK	Original	PDF	NP55N04SUG NP55N04SUG O-252 O-252) d1740
Untitled Abstract: No abstract text available Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR NP55N04SUG SWITCHING N-CHANNEL POWER MOSFET ORDERING INFORMATION DESCRIPTION The NP55N04SUG is N-channel MOS Field Effect Transistor designed for high current switching applications. PART NUMBER PACKAGE NP55N04SUG TO-252 MP-3ZK	Original	PDF	NP55N04SUG NP55N04SUG O-252 O-252)
BP317 Abstract: LTE21025R marking code 439 Text: DISCRETE SEMICONDUCTORS DATA SHEET LTE21025R NPN microwave power transistor Product specification Supersedes data of June 1992 1997 Feb 21 Philips Semiconductors Product specification NPN microwave power transistor LTE21025R FEATURES PINNING - SOT440A • Diffused emitter ballasting resistors provide excellent	Original	PDF	LTE21025R OT440A SCA53 127147/00/02/pp8 BP317 LTE21025R marking code 439
d16861 Abstract: NP60N04KUG D1686 Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR NP60N04KUG SWITCHING N-CHANNEL POWER MOS FET ORDERING INFORMATION DESCRIPTION The NP60N04KUG is N-channel MOS Field Effect Transistor designed for high current switching applications. PART NUMBER PACKAGE NP60N04KUG TO-263 MP-25ZK	Original	PDF	NP60N04KUG NP60N04KUG O-263 MP-25ZK) O-263) d16861 D1686
la 4440 amplifier circuit diagram 300 watt Abstract: la 4440 amplifier circuit diagram 300 watt diode LT 7229 2sd323 YM 7137 3D DA 3807 pdf transistor inverter welder 4 schematic 2N5630 THYRISTOR br 403 1N3492 Text: Alphanumeric Index Power Transistor Selector Guide Power Transistor Cross Reference Power Transistor Data Sheets Thyristor Selector Guide Thyristor Cross Reference Thyristor Data Sheets Leadforms, Hardware, and Mounting Techniques R ectifier and Zener Diode	OCR Scan	PDF	AN-784A la 4440 amplifier circuit diagram 300 watt la 4440 amplifier circuit diagram 300 watt diode LT 7229 2sd323 YM 7137 3D DA 3807 pdf transistor inverter welder 4 schematic 2N5630 THYRISTOR br 403 1N3492

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TRANSISTOR 3400 Search Results

TRANSISTOR 3400 Result Highlights (5)

TRANSISTOR 3400 Datasheets Context Search

Untitled

Untitled

Untitled

C5750X7R1H106M

transistor BV-1 501

TRANSISTOR j412

Untitled

Untitled

BLF6G38S-25

30RF35

TRANSISTOR J601

smd transistor 3400

Untitled

2SA1444 equivalent

SC15

D16861

2sk2498

LTE42012R

LTE42005S

d1740

Untitled

BP317

d16861

la 4440 amplifier circuit diagram 300 watt