SE012
Abstract: SE090 SE140N SE115N diode 2SC5487 sta474a 8050e SE110N SLA-7611
Text: Index by Part Number Part No. Type 2SA1186 Transistor Complementary (LAPT for Audio Output/General Purpose) 2SA1215 Transistor (Complementary (LAPT) for Audio Output/General Purpose) 2SA1216 Transistor (Complementary (LAPT) for Audio Output/General Purpose)
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2SA1186
2SA1215
2SA1216
2SA1262
2SA1294
2SA1295
2SA1303
2SA1386
2SA1386A
2SA1488
SE012
SE090
SE140N
SE115N
diode
2SC5487
sta474a
8050e
SE110N
SLA-7611
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Varistor RU
Abstract: SE110N transistor 2SC5487 2SA2003 SE090N high voltage transistor SE090 RBV-406 2SC5586
Text: Index by Part Number Part No. Type 2SA1186 Transistor Complementary (LAPT for Audio Output/General Purpose) 2SA1215 Transistor (Complementary (LAPT) for Audio Output/General Purpose) 2SA1216 Transistor (Complementary (LAPT) for Audio Output/General Purpose)
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2SA1186
2SA1215
2SA1216
2SA1262
2SA1294
2SA1295
2SA1303
2SA1386
2SA1386A
2SA1488
Varistor RU
SE110N
transistor
2SC5487
2SA2003
SE090N
high voltage transistor
SE090
RBV-406
2SC5586
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2SC5586
Abstract: transistor 2SC5586 diode RU 3AM 2SA2003 microwave oven diode single phase bridge rectifier IC with output 1A 2SC5487 RG-2A Diode Dual MOSFET 606 TFD312S-F
Text: Index by Part Number Part No. Type 2SA1186 Transistor Complementary (LAPT for Audio Output/General Purpose) 2SA1215 Transistor (Complementary (LAPT) for Audio Output/General Purpose) 2SA1216 Transistor (Complementary (LAPT) for Audio Output/General Purpose)
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2SA1186
2SA1215
2SA1216
2SA1262
2SA1294
2SA1295
2SA1303
2SA1386
2SA1386A
2SA1488
2SC5586
transistor 2SC5586
diode RU 3AM
2SA2003
microwave oven diode
single phase bridge rectifier IC with output 1A
2SC5487
RG-2A Diode
Dual MOSFET 606
TFD312S-F
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fgt313
Abstract: transistor fgt313 SLA4052 RG-2A Diode SLA5222 fgt412 RBV-3006 FMN-1106S SLA5096 diode ry2a
Text: Part Number Index Part No. Category Description Page Part No. Category Description Page 2SA1186 Transistor Audio and General Purpose LAPT 156 2SC4024 Transistor DC-DC Converter and General Purpose 158 2SA1215 Transistor Audio and General Purpose (LAPT) 156
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2SA1186
2SC4024
2SA1215
2SC4131
2SA1216
2SC4138
100VAC
2SA1294
2SC4140
fgt313
transistor fgt313
SLA4052
RG-2A Diode
SLA5222
fgt412
RBV-3006
FMN-1106S
SLA5096
diode ry2a
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BC847B
Abstract: BC857B BC857B 3F
Text: BC857B SMALL SIGNAL PNP TRANSISTOR PRELIMINARY DATA Type Marking BC857B 3F SILICON EPITAXIAL PLANAR PNP TRANSISTOR MINIATURE SOT-23 PLASTIC PACKAGE FOR SURFACE MOUNTING CIRCUITS TAPE AND REEL PACKING THE NPN COMPLEMENTARY TYPE IS BC847B • ■ ■ ■
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BC857B
OT-23
BC847B
OT-23
BC847B
BC857B
BC857B 3F
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3FW transistor
Abstract: marking 3FW 3FW marking 3FW ST BC857BW 3FW SOT 3FW NPN BC847BW BC857C
Text: BC857BW SMALL SIGNAL PNP TRANSISTOR PRELIMINARY DATA • ■ ■ ■ Type Marking BC857BW 3FW SILICON EPITAXIAL PLANAR PNP TRANSISTOR MINIATURE SOT-323 PLASTIC PACKAGE FOR SURFACE MOUNTING CIRCUITS TAPE AND REEL PACKING THE NPN COMPLEMENTARY TYPE IS BC847BW
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BC857BW
OT-323
BC847BW
OT-323
3FW transistor
marking 3FW
3FW marking
3FW ST
BC857BW
3FW SOT
3FW NPN
BC847BW
BC857C
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BC857B
Abstract: MARKING 3F BC847B
Text: BC857B SMALL SIGNAL PNP TRANSISTOR PRELIMINARY DATA • ■ ■ ■ Type Marking BC857B 3F SILICON EPITAXIAL PLANAR PNP TRANSISTOR MINIATURE SOT-23 PLASTIC PACKAGE FOR SURFACE MOUNTING CIRCUITS TAPE AND REEL PACKING THE NPN COMPLEMENTARY TYPE IS BC847B
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BC857B
OT-23
BC847B
OT-23
BC857B
MARKING 3F
BC847B
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Untitled
Abstract: No abstract text available
Text: BC857B SMALL SIGNAL PNP TRANSISTOR PRELIMINARY DATA • Type Marking BC857B 3F SILICON EPITAXIAL PLANAR PNP TRANSISTOR MINIATURE SOT-23 PLASTIC PACKAGE FOR SURFACE MOUNTING CIRCUITS TAPE AND REEL PACKING THE NPN COMPLEMENTARY TYPE IS BC847B s t c u
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BC857B
OT-23
BC847B
OT-23
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3FW transistor
Abstract: marking 3FW 3FW ST 3FW marking pnp 3fw 3FW SOT 3FW NPN 3fw pnp 3FW 22 transistor D marking PNP
Text: BC857BW SMALL SIGNAL PNP TRANSISTOR PRELIMINARY DATA • ■ ■ ■ Type Marking BC857BW 3FW SILICON EPITAXIAL PLANAR PNP TRANSISTOR MINIATURE SOT-323 PLASTIC PACKAGE FOR SURFACE MOUNTING CIRCUITS TAPE AND REEL PACKING THE NPN COMPLEMENTARY TYPE IS BC847BW
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BC857BW
OT-323
BC847BW
OT-323
3FW transistor
marking 3FW
3FW ST
3FW marking
pnp 3fw
3FW SOT
3FW NPN
3fw pnp
3FW 22 transistor
D marking PNP
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BC857B
Abstract: BC847B BC857C
Text: BC857B SMALL SIGNAL PNP TRANSISTOR PRELIMINARY DATA • ■ ■ ■ Type Marking BC857B 3F SILICON EPITAXIAL PLANAR PNP TRANSISTOR MINIATURE SOT-23 PLASTIC PACKAGE FOR SURFACE MOUNTING CIRCUITS TAPE AND REEL PACKING THE NPN COMPLEMENTARY TYPE IS BC847B
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BC857B
OT-23
BC847B
OT-23
BC857B
BC847B
BC857C
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TRANSISTOR SMD MARKING CODE 3f
Abstract: transistor smd marking code 3l SMD TRANSISTOR MARKING 3B 3F smd transistor TRANSISTOR SMD MARKING CODE 3K smd transistor 3f smd transistor 3g TRANSISTOR SMD MARKING CODE 3G smd transistor 3K transistor smd 3E
Text: SMD General Purpose Transistor PNP BC856/BC857/BC858 SMD General Purpose Transistor (PNP) Features • PNP Silicon Epitaxial Planar Transistor for Switching and Amplifier Applications Mechanical Data SOT-23 SOT-23, Plastic Package Case: Solderable per MIL-STD-202G, Method 208
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BC856/BC857/BC858
OT-23
OT-23,
MIL-STD-202G,
BC856A
BC857A
BC857B
BC857C
BC858A
BC858B
TRANSISTOR SMD MARKING CODE 3f
transistor smd marking code 3l
SMD TRANSISTOR MARKING 3B
3F smd transistor
TRANSISTOR SMD MARKING CODE 3K
smd transistor 3f
smd transistor 3g
TRANSISTOR SMD MARKING CODE 3G
smd transistor 3K
transistor smd 3E
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Untitled
Abstract: No abstract text available
Text: '^£;r'.i-^oyi.du.ctot \J-J'7.0ducti, E3iM AVE. ; :"~ EL.D, "•ie J v TELEPHONE: 973 376-2922 JERSEY o~oai 2N499 (212) 227-8005 FAX: (973) 376"SS6° GERMANIUM MICRO ALLOY DIFFUSED-BASE TRANSISTOR PNP POLARITY General Description This transistor is a PNP, germanium, triode transistor designed primarily
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2N499
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la 4440 amplifier circuit diagram 300 watt
Abstract: la 4440 amplifier circuit diagram 300 watt diode LT 7229 2sd323 YM 7137 3D DA 3807 pdf transistor inverter welder 4 schematic 2N5630 THYRISTOR br 403 1N3492
Text: Alphanumeric Index Power Transistor Selector Guide Power Transistor Cross Reference Power Transistor Data Sheets Thyristor Selector Guide Thyristor Cross Reference Thyristor Data Sheets Leadforms, Hardware, and Mounting Techniques R ectifier and Zener Diode
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AN-784A
la 4440 amplifier circuit diagram 300 watt
la 4440 amplifier circuit diagram 300 watt
diode LT 7229
2sd323
YM 7137 3D
DA 3807 pdf transistor
inverter welder 4 schematic
2N5630
THYRISTOR br 403
1N3492
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PDF
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BF398
Abstract: No abstract text available
Text: BF398 PNP SILICON TRANSISTOR TO-92F 3F398 is PNP silicon transistor designed for high voltage applications. CBE ABSOLUTE MAXIMUM RATINGS Collector-Base Voltage VC BO 150V Collector-Emitter Voltage VCEO 150V Emitter-Base Voltage VE 80 6V Total Power Dissipation
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BF398
O-92F
3F398
625mW
100mA
BF398
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BUK436-60A
Abstract: 134 T31 100-P BUK436-60B
Text: PHILIPS INTERNATIONAL bSE D • 711D6Sb 00t.3flTl 3^b ■ P H I N Philips Semiconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode iield-effect power transistor in a plastic envelope. The device is intended for use in
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711D6Sb
BUK436-60A/B
BUK436
drai11062b
BUK436-60A
134 T31
100-P
BUK436-60B
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PDF
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Untitled
Abstract: No abstract text available
Text: N AMER PHILIPS/DISCRETE bRE D • bbS3R31 0D3QSbS 3fi0 * A P X Philips Semiconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic full-pack envelope. The device is intended for use in
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bbS3R31
BUK445-400B
bbS3T31
bbS3131
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PDF
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Untitled
Abstract: No abstract text available
Text: N AMER PHILIPS/DISCRETE b^E D • bbS3T31 DDEaS^b 3fl•4 APX BUX99 SILICON TRIPLE DIFFUSED POWER TRANSISTOR High-voltage, high-speed, glass-passivated npn power transistor in a TO-126 envelope, intended for use in fast switching applications. QUICK REFERENCE DATA
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bbS3T31
BUX99
O-126
O-126.
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PDF
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BUK436-60A
Abstract: MC 151 transistor 100-P BUK436-60B
Text: PHILIPS INTERNA TION AL bSE D • 711D6Sb 00t.3flTl 3^b ■ P H I N Philips Sem iconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode iield-effect power transistor in a plastic envelope. The device is intended for use in
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OCR Scan
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711D6Sb
BUK436-60A/B
BUK436
711062b
00b3fi
BUK436-60A
MC 151 transistor
100-P
BUK436-60B
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PDF
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2sb504
Abstract: KPL 3009 2SB502 BLY34 germanium BF316A BSX12 2SD716, 2SB686 35W amplifiers bf197 acy52
Text: TRANSISTOR DATA TABLES Other Titles of Interest B P 85 International Transistor Equivalents Guide B P286 A R eferen ce G uide to Basic Electronics Terms BP287 A R eferen ce G uide to Practical Electronics Terms n TRANSISTOR DATA TABLES by Hans-Gunther Steidle
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PDF
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BUX99
Abstract: apx 400V
Text: N AMER PHI LIPS/DIS CRET E b'ìE » b b S B 'm DOSASI 3fl4 IAPX BUX99 V _ SILICON TRIPLE DIFFUSED POWER TRANSISTOR High-voltage, high-speed, glass-passivated npn power transistor in a TO-126 envelope, intended for use in fast switching applications.
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BUX99
O-126
O-126.
BUX99
apx 400V
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PDF
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Untitled
Abstract: No abstract text available
Text: CSA1162 LOW FREQUENCY GENERAL PURPOSE AMPLIFIER TRANSISTOR P-N-P transistor Marking CSA1162Y-3E CSA1162GR G -3F PACKAGE OUTLIN E DETAILS ALL DIM EN SION S IN m m 3.0 2.8 Pin configuration 1 = BASE 2 = EMITTER 3 = COLLECTOR 0.14 0.09 0.48 0.38 3 2.6 2.4 _1.02
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CSA1162
CSA1162Y-3E
CSA1162GR
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PDF
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Untitled
Abstract: No abstract text available
Text: CSA1162 LOW FREQUENCY GENERAL PURPOSE AMPLIFIER TRANSISTOR P-N-P transistor PACKAGE O U TLIN E DETAILS ALL DIM EN SION S IN nun Marking CSA1162Y-3E CSA1162GR G -3F _3.0 2.8 0.14 Û.09 0.48 o 3b Pin configuration 1 = BASE 2 = EMITTER 3 = COLLECTOR 2.6 2.4 _1.02
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CSA1162
CSA1162Y-3E
CSA1162GR
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PDF
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CA3046 RCA
Abstract: ICAN-5296 CA304B CA3046 CA3045 RCA-CA3018 rca CA3046 LLAM CA3045F 92CS-I52I6
Text: D E | 3fl7SDÛl 0014b0G 5 G E SOLID STATE 01 3875081 G Arrays _ SOLID S T AT E 0 1E 1 4 600 D CA3045, CA3046 General-Purpose N-P-N Transistor Arrays Three Isolated Transistors and One DifferentiallyConnected Transistor Pair For Low-Power Applications at Frequencies
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CA3045,
CA3046
CA3045
CA3046
92CS-K256H1
92CS-ISI96
CA3046 RCA
ICAN-5296
CA304B
RCA-CA3018
rca CA3046
LLAM
CA3045F
92CS-I52I6
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PDF
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Untitled
Abstract: No abstract text available
Text: N AMER PHILIPS/DISCRETE bbS3T31 DDBflflRO LQ3 I APX b'lE D l BLU99 BLU99/SL U.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor primarily intended for use in mobile radio transmitters in the u.h.f. band. The transistor is also very suitable for application in the 900 MHz mobile radio band.
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bbS3T31
BLU99
BLU99/SL
OT122A)
BLU99/SL
OT122D)
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