BC856
Abstract: sot-23 marking 3g MARKING 3A SOT-23 transistor marking code SOT-23 marking 3F transistor sot-23 3F TRANSISTOR SOT-23 marking 3f npn transistor footprint marking 3F sot-23 transistor SOT-23 transistor code 3B
Text: BL Galaxy Electrical Production specification NPN general purpose Transistor FEATURES z Low current. max.100mA z Low voltage.(max.65v) BC856/857/858 Pb Lead-free APPLICATIONS z General purpose switching and amplification. SOT-23 ORDERING INFORMATION Type No.
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BC856/857/858
100mA)
OT-23
BC856A/B
BC857A/B/C
BC858A/B/C
BC856
BC856
sot-23 marking 3g
MARKING 3A SOT-23
transistor marking code SOT-23
marking 3F transistor sot-23
3F TRANSISTOR
SOT-23 marking 3f
npn transistor footprint
marking 3F sot-23 transistor
SOT-23 transistor code 3B
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3BS transistor
Abstract: marking 3bs transistor 3bs 3bs marking code 3BS MARKING sot323 transistor marking BL SOT323 BC856W BC857W BC858W
Text: BL Galaxy Electrical Production specification PNP Silicon Epitaxial Planar Transistor BC856W/BC857W/BC858W FEATURES z Ideally suited for automatic insertion. z Power dissipation. PC=200mW Pb Lead-free APPLICATIONS z General purpose switching and amplification application.
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BC856W/BC857W/BC858W
200mW)
OT-323
BC856W
BC857W
BC858W
3BS transistor
marking 3bs
transistor 3bs
3bs marking code
3BS MARKING
sot323 transistor marking
BL SOT323
BC856W
BC857W
BC858W
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stv2162
Abstract: vertical tv deflexion vco based functiongenerator RES54 Resistor MSB 54 RES55
Text: STV2162 2H - VIDEO SCANNING PROCESSOR . . . . . . . . . . . . . . . . . VIDEO PART USER CONTROL FUNCTIONS : CONTRAST, BRIGHTNESS, SATURATION, COLOR EQUALIZER RGB INPUT WITH FAST-BLANKING FOR ON-SCREEN-DISPLAY / TELETEXT FAST BLANKING INPUT FOR CONTRAST
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STV2162
SDIP56
stv2162
vertical tv deflexion
vco based functiongenerator
RES54
Resistor MSB 54
RES55
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STV2160
Abstract: amplifier smps PHILIPS color tv Circuit Diagram schematics
Text: STV2161 VIDEO SCANNING PSI PROCESSOR . . . . . . . . . . . . . VIDEO PART RGB INPUT WITH FAST BLANKING SWITCH FOR SCART CONNECTOR RGB INPUT WITH FAST BLANKING FOR ON SCREEN DISPLAY / TELETEXT USER CONTROL FUNCTIONS : CONTRAST, BRIGHTNESS, SATURATION AVERAGE BEAM LIMITER FUNCTION WITH
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STV2161
SDIP56
PMSDIP56
STV2160
amplifier smps
PHILIPS color tv Circuit Diagram schematics
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STV2160
Abstract: STV2161
Text: STV2161 VIDEO SCANNING PSI PROCESSOR . . . . . . . . . . . . . VIDEO PART RGB INPUT WITH FAST BLANKING SWITCH FOR SCART CONNECTOR RGB INPUT WITH FAST BLANKING FOR ON SCREEN DISPLAY / TELETEXT USER CONTROL FUNCTIONS : CONTRAST, BRIGHTNESS, SATURATION AVERAGE BEAM LIMITER FUNCTION WITH
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STV2161
STV2160
STV2161
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STV2160
Abstract: STV2161 stv*2160
Text: STV2161 VIDEO SCANNING PSI PROCESSOR . . . . . . . . . . . . . VIDEO PART RGB INPUT WITH FAST BLANKING SWITCH FOR SCART CONNECTOR RGB INPUT WITH FAST BLANKING FOR ON SCREEN DISPLAY / TELETEXT USER CONTROL FUNCTIONS : CONTRAST, BRIGHTNESS, SATURATION AVERAGE BEAM LIMITER FUNCTION WITH
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STV2161
STV2160
STV2161
stv*2160
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MA6400
Abstract: 2F transistor Transistor 2f mm code
Text: HYBRID I.C.s "Hi-Net" 500MHz Low Pass Filter 32.7W x13.3H×2T mm This will guarantee 45W of input power, with quite small loss and large attenuation at the insertion. The package is very thin with small installation area. (Code ZHBA1580A(B) Electrical characteristics(Zin = Zout = 50Ω)
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500MHz
ZHBA1580A
BA1580A
BA1580B
435MHz
BA1580
440MHz
20min
ZHBA1580B
ZHBA1580A
MA6400
2F transistor
Transistor 2f
mm code
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TRANSISTOR 3F z
Abstract: BC857AT BC857BT BC857CT
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD SOT-523 Plastic-Encapsulate Transistors BC857AT, BT, CT TRANSISTOR PNP SOT-523 FEATURES Ideally suited for automatic insertion z For Switching and AF Amplifier Applications z 1. BASE 2. EMITTER 3. COLLECTOR
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OT-523
BC857AT,
OT-523
BC857AT
BC857BT
BC857CT
BC857AT
BC857BT
BC857CT
-10mA,
TRANSISTOR 3F z
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Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD SOT-523 Plastic-Encapsulate Transistors BC857AT, BT, CT TRANSISTOR PNP SOT-523 FEATURES Ideally suited for automatic insertion z For Switching and AF Amplifier Applications z 1. BASE 2. EMITTER 3. COLLECTOR
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OT-523
BC857AT,
OT-523
BC857AT
BC857BT
BC857CT
BC857AT
BC857BT
-10mA,
-100mA,
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balanced modulator MC1496 theory
Abstract: balanced modulator MC1496 operation theory AM MODULATOR 1496 MC1496 application note balanced modulator MC1496 MC1496 balanced modulator theory MC1596 frequency doubler circuit MC1596K cascode transistor array VCO
Text: Philips Semiconductors Application note Balanced modulator/demodulator applications using the MC1496/1596 AN189 The transistors are connected in a cascode fashion. Therefore, sufficient collector voltage must be supplied to avoid saturation if linear operation is to be achieved. Voltages greater than 2V are
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MC1496/1596
AN189
MC1496/MC1596
MC1496
10MHz
12VDC
15VDC
SR00782
balanced modulator MC1496 theory
balanced modulator MC1496 operation theory
AM MODULATOR 1496
MC1496 application note
balanced modulator MC1496
balanced modulator theory
MC1596 frequency doubler circuit
MC1596K
cascode transistor array VCO
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Untitled
Abstract: No abstract text available
Text: ETN36-O3O 300a s < r7 - \ ' 7 > i > X 9 :Z is z L - ) l' : Outline Drawings POWER TRANSISTOR MODULE : Features • High Current • hFE High DC Current Gain •immm Non Insulated Type : Applications High Power Switching • S H ?W iS 3f{K • DC i - • i§ liU !S
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ETN36-O3O
I95t/R89
Shl50
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2SD1505
Abstract: 2SB1064 TRANSISTOR 2sd1505 7M57
Text: ROHM CO S -7 > y LTD 7 fl2 flW OGOSf lf ib £ / T ransistors 2SD1505 - y lj 3 > 2SD15Û5 • 3 B R H Ï1 7^ 3 3 -0 * Ifcf^=3f - V 7 ^ 7 V - ^ NPN Freq. Power Amp. Epitaxial Planar NPN Silicon Transistor • W Fi \t"j£[2/Dim ensions Unit : mm)
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2SD1505
T-33-t39
2SS1505
2SB1064tH
2SB1064.
O-220
2SD1505
1/7M57?
2SB1064
TRANSISTOR 2sd1505
7M57
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BFT92
Abstract: BFR92 BFR92A 727 Transistor power values BFT92V
Text: 11 N AMER P H IL IP S /D IS C R E T E 2SE D b b S B ^ l O O lö lb ? S BFT92 T-3f-J7 SILICON PLANAR EPITAXIAL TRANSISTORS P-N-P transistor in a microminiature plastic envelope. It is primarily intended for use in u.h.f. and microwave amplifiers in thick and thin-film circuits, such as in aerial amplifiers, radar systems,
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BFT92
BFR92
BFR92A.
Colle131
Z62771
BFT92
BFR92A
727 Transistor power values
BFT92V
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FUJI 1DI 300
Abstract: 1DI 150 power transistor bjt 1000 a M106 power BJT 60A VEBo-10V fuji 1di fuji 1 pack bjt
Text: _ _ - _ 1-Pack BJT I D I 3 Z - 1 • » * ! Outline Drawings 7 - | a « 13^ 21 29 8 8 16 nr POWER TRANSISTOR MODULE : Features • ¡S ii/± High Voltage • y ij — «J ;j- KrtîSc Including Free Wheeling Diode • ASO ^ S i ' Excellent Safe Operating Area
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300Z-100
-300A
FUJI 1DI 300
1DI 150
power transistor bjt 1000 a
M106
power BJT 60A
VEBo-10V
fuji 1di
fuji 1 pack bjt
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TC-7986A
Abstract: 2SK2112 CMS01 7986A diode lt 0236
Text: zr — *5? N E h ^ > v ^ 3* MOS Field Effect Transistor r j C • :> — h 2 S K 2 1 1 2 MOS FET 2 S K 2 1 1 2 IÎN 3 1 + * ; H Ë M O S F E J T & U , * C ct 5 ¡ t g E K ^ g l * * -f -y T 't o * < - y * > 7 ìS j£ f c jÌt 'f c « > , C D r ^ ^ iX - ^ llE S i ^ ,
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2SK2112
oeTi14
a-Ti4S24#
TC-7986A
CMS01
7986A
diode lt 0236
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IMZ1
Abstract: No abstract text available
Text: b y > y Z £ /Transistors ROHM CO L T » IMZ1 MQE D V l ^ - x H 7 0 2 6 ^ 00Qb433 ' y /G eneral Small Signal Amp. Isolated Mini-Mold Device IMZ1 SRHN 7 = 2 7 -2 7 1 SMT SC-59) ¿ IP h -fc S K PNP vi-ssivitvvu-7- • ÿ W f^ ü IU /D im e n sio n s (Unit : mm)
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Q00bM33
SC-59)
T-27-27
Fig-13
IMZ1
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Untitled
Abstract: No abstract text available
Text: Transistor m in i Reel PNP — R atin g s m iniB a g Bulk 500 pcs _ Type_ PNP G en eral P urpose BC80S-16 73-8081 BC80E-25 73-8082 BC806-40 73-8083 V ceo Ic 100 f ICS V mA M in-M ax VCE fT M H z P art Marketing 53-8081 53-8082 53-8083 25V 500mA 100-250
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BC80S-16
BC80E-25
BC806-40
500mA
100mA
100MHz
100mA
150MHz
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STV2160
Abstract: stv*2160 STV2161 philips tv smps SMPS smps 14 pin connector
Text: Æ T S G S -T H O M S O N * 7 * . R 5 1 D Ê lS liL l g T îia @ fflD Ê g S T V 2 1 61 VIDEO SCANNING PSI PROCESSOR ADVANCE DATA VIDEO PART • RGB INPUT WITH FAST BLANKING SWITCH FOR SCART CONNECTOR ■ RGB INPUT WITH FAST BLANKING FOR ON SCREEN DISPLAY/TELETEXT
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STV2161
STV2160
stv*2160
STV2161
philips tv smps
SMPS
smps 14 pin connector
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PDF
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Untitled
Abstract: No abstract text available
Text: /T 7 7 £ S C S -T H O M S O N EintgisoiiLimtsiüintgs STV2162 2H - VIDEO SCANNING PROCESSOR PRO DU CT PREVIEW VIDEO PART • USER CONTROL FUNCTIONS : CONTRAST BRIGHTNESS, SATURATION, COLOR EQUALIZER ■ RGB INPUT WITH FAST-BLANKING FOR ON-SCREEN-DISPLAY/ TELETEXT
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STV2162
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PDF
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IC-8844
Abstract: PA670 PA670T SC-70A
Text: "t — ^7 • f y — h v ' J h ^ > V X ^ Silicon Transistor = I > UPA670T N P N X t f t $ r d e '> 77; ^ V ,; = l > h 7 > v x ^ 6 f c f > 2 l§ IS & juPA670T t t , h 7 > V X £ i 2[SS£p*3j& U tz 5. - =E- Jl> K f / w z - r & y , ( U f i : •■ m m )
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uPA670T
juPA670T
SC-70/'
O//PA671
IC-8844
PA670
PA670T
SC-70A
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E3F-DS30
Abstract: omron e3f omron E3F-DS30 Metal detection sensor distance of 20 cm E3F2-DS30C4 F2-DS30 E3F2-DS10B4 omron E3F2-DS30C4 E3F2-3B4 E3F2-R2C4-E
Text: omRon z-w ^ TS ;/ E3F2 Photoelectric Sensor Panel-mountable Cylindrical Photoelectric Sensor with Built-in Amplifier for Use as an Optical Proximity Switch • M 18 DIN-sized cylindrical housing, ABS resin case. ■ Simple adjustment by using threaded body.
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E39-R1)
E3F-DS30
omron e3f
omron E3F-DS30
Metal detection sensor distance of 20 cm
E3F2-DS30C4
F2-DS30
E3F2-DS10B4
omron E3F2-DS30C4
E3F2-3B4
E3F2-R2C4-E
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n50g
Abstract: 2SA990 PA33 TC5536
Text: =r — — h vU =i> N E C ^ h ^ >vX 3r Silicon Transistor 2 PNPX fc°$ ¿CV 9 A 9 U =1 > h ^ > V * £ m m o z f-u t • S ¥ t ì : mm • x - y n i- ^ i'if iD f É J iliê Î ô ^ lx liit ï f f li: Ü T S ilT - t o t>m o * a i E * a i t i i B $ * f * § i'c o t - , í i k ü $
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2SA990
n50g
2SA990
PA33
TC5536
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PDF
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7974a
Abstract: 2SD2403
Text: ïr — ^ — h '> U =1 > h Silicon Transistor 2SD2403 N P N itf^ v T ^ u ^ v U ju r a « : * « « , 2 S D 2 4 0 3 t t /J 't ë fl» a a* 6 U W x '- ÿ ^ ï - * m m z i> ' p m m x ' f v i - x r m t •# U T * U , D C / D C w m m e : m m ) • K 7 < / * £ iî lC » l? T o
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2SD2403
2SD2403U
7974a
2SD2403
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sft 322 transistor
Abstract: b322 TRANSISTOR Transistor B322 B082 M106 B321 diode sg 5 ts
Text: 1DI2OOZ-12O 200a g ± / < 7 — : Outline Drawings y < r7 - b :7 > ' > ^ ^ n . - ) U POWER TRANSISTOR MODULE 13 Z1_29 Features • ftflft/E High Voltage y i) KrtJlS • ASO Excellent Safe Operating Area • •m m Including Free Wheeling Diode Insulated Type
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1DI2OOZ-12O
e82988
-B-082
sft 322 transistor
b322 TRANSISTOR
Transistor B322
B082
M106
B321
diode sg 5 ts
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