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    TRANSISTOR 3F Z Search Results

    TRANSISTOR 3F Z Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR 3F Z Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    BC856

    Abstract: sot-23 marking 3g MARKING 3A SOT-23 transistor marking code SOT-23 marking 3F transistor sot-23 3F TRANSISTOR SOT-23 marking 3f npn transistor footprint marking 3F sot-23 transistor SOT-23 transistor code 3B
    Text: BL Galaxy Electrical Production specification NPN general purpose Transistor FEATURES z Low current. max.100mA z Low voltage.(max.65v) BC856/857/858 Pb Lead-free APPLICATIONS z General purpose switching and amplification. SOT-23 ORDERING INFORMATION Type No.


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    BC856/857/858 100mA) OT-23 BC856A/B BC857A/B/C BC858A/B/C BC856 BC856 sot-23 marking 3g MARKING 3A SOT-23 transistor marking code SOT-23 marking 3F transistor sot-23 3F TRANSISTOR SOT-23 marking 3f npn transistor footprint marking 3F sot-23 transistor SOT-23 transistor code 3B PDF

    3BS transistor

    Abstract: marking 3bs transistor 3bs 3bs marking code 3BS MARKING sot323 transistor marking BL SOT323 BC856W BC857W BC858W
    Text: BL Galaxy Electrical Production specification PNP Silicon Epitaxial Planar Transistor BC856W/BC857W/BC858W FEATURES z Ideally suited for automatic insertion. z Power dissipation. PC=200mW Pb Lead-free APPLICATIONS z General purpose switching and amplification application.


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    BC856W/BC857W/BC858W 200mW) OT-323 BC856W BC857W BC858W 3BS transistor marking 3bs transistor 3bs 3bs marking code 3BS MARKING sot323 transistor marking BL SOT323 BC856W BC857W BC858W PDF

    stv2162

    Abstract: vertical tv deflexion vco based functiongenerator RES54 Resistor MSB 54 RES55
    Text: STV2162 2H - VIDEO SCANNING PROCESSOR . . . . . . . . . . . . . . . . . VIDEO PART USER CONTROL FUNCTIONS : CONTRAST, BRIGHTNESS, SATURATION, COLOR EQUALIZER RGB INPUT WITH FAST-BLANKING FOR ON-SCREEN-DISPLAY / TELETEXT FAST BLANKING INPUT FOR CONTRAST


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    STV2162 SDIP56 stv2162 vertical tv deflexion vco based functiongenerator RES54 Resistor MSB 54 RES55 PDF

    STV2160

    Abstract: amplifier smps PHILIPS color tv Circuit Diagram schematics
    Text: STV2161 VIDEO SCANNING PSI PROCESSOR . . . . . . . . . . . . . VIDEO PART RGB INPUT WITH FAST BLANKING SWITCH FOR SCART CONNECTOR RGB INPUT WITH FAST BLANKING FOR ON SCREEN DISPLAY / TELETEXT USER CONTROL FUNCTIONS : CONTRAST, BRIGHTNESS, SATURATION AVERAGE BEAM LIMITER FUNCTION WITH


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    STV2161 SDIP56 PMSDIP56 STV2160 amplifier smps PHILIPS color tv Circuit Diagram schematics PDF

    STV2160

    Abstract: STV2161
    Text: STV2161 VIDEO SCANNING PSI PROCESSOR . . . . . . . . . . . . . VIDEO PART RGB INPUT WITH FAST BLANKING SWITCH FOR SCART CONNECTOR RGB INPUT WITH FAST BLANKING FOR ON SCREEN DISPLAY / TELETEXT USER CONTROL FUNCTIONS : CONTRAST, BRIGHTNESS, SATURATION AVERAGE BEAM LIMITER FUNCTION WITH


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    STV2161 STV2160 STV2161 PDF

    STV2160

    Abstract: STV2161 stv*2160
    Text: STV2161 VIDEO SCANNING PSI PROCESSOR . . . . . . . . . . . . . VIDEO PART RGB INPUT WITH FAST BLANKING SWITCH FOR SCART CONNECTOR RGB INPUT WITH FAST BLANKING FOR ON SCREEN DISPLAY / TELETEXT USER CONTROL FUNCTIONS : CONTRAST, BRIGHTNESS, SATURATION AVERAGE BEAM LIMITER FUNCTION WITH


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    STV2161 STV2160 STV2161 stv*2160 PDF

    MA6400

    Abstract: 2F transistor Transistor 2f mm code
    Text: HYBRID I.C.s "Hi-Net" 500MHz Low Pass Filter 32.7W x13.3H×2T mm This will guarantee 45W of input power, with quite small loss and large attenuation at the insertion. The package is very thin with small installation area. (Code ZHBA1580A(B) Electrical characteristics(Zin = Zout = 50Ω)


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    500MHz ZHBA1580A BA1580A BA1580B 435MHz BA1580 440MHz 20min ZHBA1580B ZHBA1580A MA6400 2F transistor Transistor 2f mm code PDF

    TRANSISTOR 3F z

    Abstract: BC857AT BC857BT BC857CT
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD SOT-523 Plastic-Encapsulate Transistors BC857AT, BT, CT TRANSISTOR PNP SOT-523 FEATURES Ideally suited for automatic insertion z For Switching and AF Amplifier Applications z 1. BASE 2. EMITTER 3. COLLECTOR


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    OT-523 BC857AT, OT-523 BC857AT BC857BT BC857CT BC857AT BC857BT BC857CT -10mA, TRANSISTOR 3F z PDF

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD SOT-523 Plastic-Encapsulate Transistors BC857AT, BT, CT TRANSISTOR PNP SOT-523 FEATURES Ideally suited for automatic insertion z For Switching and AF Amplifier Applications z 1. BASE 2. EMITTER 3. COLLECTOR


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    OT-523 BC857AT, OT-523 BC857AT BC857BT BC857CT BC857AT BC857BT -10mA, -100mA, PDF

    balanced modulator MC1496 theory

    Abstract: balanced modulator MC1496 operation theory AM MODULATOR 1496 MC1496 application note balanced modulator MC1496 MC1496 balanced modulator theory MC1596 frequency doubler circuit MC1596K cascode transistor array VCO
    Text: Philips Semiconductors Application note Balanced modulator/demodulator applications using the MC1496/1596 AN189 The transistors are connected in a cascode fashion. Therefore, sufficient collector voltage must be supplied to avoid saturation if linear operation is to be achieved. Voltages greater than 2V are


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    MC1496/1596 AN189 MC1496/MC1596 MC1496 10MHz 12VDC 15VDC SR00782 balanced modulator MC1496 theory balanced modulator MC1496 operation theory AM MODULATOR 1496 MC1496 application note balanced modulator MC1496 balanced modulator theory MC1596 frequency doubler circuit MC1596K cascode transistor array VCO PDF

    Untitled

    Abstract: No abstract text available
    Text: ETN36-O3O 300a s < r7 - \ ' 7 > i > X 9 :Z is z L - ) l' : Outline Drawings POWER TRANSISTOR MODULE : Features • High Current • hFE High DC Current Gain •immm Non Insulated Type : Applications High Power Switching • S H ?W iS 3f{K • DC i - • i§ liU !S


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    ETN36-O3O I95t/R89 Shl50 PDF

    2SD1505

    Abstract: 2SB1064 TRANSISTOR 2sd1505 7M57
    Text: ROHM CO S -7 > y LTD 7 fl2 flW OGOSf lf ib £ / T ransistors 2SD1505 - y lj 3 > 2SD15Û5 • 3 B R H Ï1 7^ 3 3 -0 * Ifcf^=3f - V 7 ^ 7 V - ^ NPN Freq. Power Amp. Epitaxial Planar NPN Silicon Transistor • W Fi \t"j£[2/Dim ensions Unit : mm)


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    2SD1505 T-33-t39 2SS1505 2SB1064tH 2SB1064. O-220 2SD1505 1/7M57? 2SB1064 TRANSISTOR 2sd1505 7M57 PDF

    BFT92

    Abstract: BFR92 BFR92A 727 Transistor power values BFT92V
    Text: 11 N AMER P H IL IP S /D IS C R E T E 2SE D b b S B ^ l O O lö lb ? S BFT92 T-3f-J7 SILICON PLANAR EPITAXIAL TRANSISTORS P-N-P transistor in a microminiature plastic envelope. It is primarily intended for use in u.h.f. and microwave amplifiers in thick and thin-film circuits, such as in aerial amplifiers, radar systems,


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    BFT92 BFR92 BFR92A. Colle131 Z62771 BFT92 BFR92A 727 Transistor power values BFT92V PDF

    FUJI 1DI 300

    Abstract: 1DI 150 power transistor bjt 1000 a M106 power BJT 60A VEBo-10V fuji 1di fuji 1 pack bjt
    Text: _ _ - _ 1-Pack BJT I D I 3 Z - 1 • » * ! Outline Drawings 7 - | a « 13^ 21 29 8 8 16 nr POWER TRANSISTOR MODULE : Features • ¡S ii/± High Voltage • y ij — «J ;j- KrtîSc Including Free Wheeling Diode • ASO ^ S i ' Excellent Safe Operating Area


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    300Z-100 -300A FUJI 1DI 300 1DI 150 power transistor bjt 1000 a M106 power BJT 60A VEBo-10V fuji 1di fuji 1 pack bjt PDF

    TC-7986A

    Abstract: 2SK2112 CMS01 7986A diode lt 0236
    Text: zr — *5? N E h ^ > v ^ 3* MOS Field Effect Transistor r j C • :> — h 2 S K 2 1 1 2 MOS FET 2 S K 2 1 1 2 IÎN 3 1 + * ; H Ë M O S F E J T & U , * C ct 5 ¡ t g E K ^ g l * * -f -y T 't o * < - y * > 7 ìS j£ f c jÌt 'f c « > , C D r ^ ^ iX - ^ llE S i ^ ,


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    2SK2112 oeTi14 a-Ti4S24# TC-7986A CMS01 7986A diode lt 0236 PDF

    IMZ1

    Abstract: No abstract text available
    Text: b y > y Z £ /Transistors ROHM CO L T » IMZ1 MQE D V l ^ - x H 7 0 2 6 ^ 00Qb433 ' y /G eneral Small Signal Amp. Isolated Mini-Mold Device IMZ1 SRHN 7 = 2 7 -2 7 1 SMT SC-59) ¿ IP h -fc S K PNP vi-ssivitvvu-7- • ÿ W f^ ü IU /D im e n sio n s (Unit : mm)


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    Q00bM33 SC-59) T-27-27 Fig-13 IMZ1 PDF

    Untitled

    Abstract: No abstract text available
    Text: Transistor m in i Reel PNP — R atin g s m iniB a g Bulk 500 pcs _ Type_ PNP G en eral P urpose BC80S-16 73-8081 BC80E-25 73-8082 BC806-40 73-8083 V ceo Ic 100 f ICS V mA M in-M ax VCE fT M H z P art Marketing 53-8081 53-8082 53-8083 25V 500mA 100-250


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    BC80S-16 BC80E-25 BC806-40 500mA 100mA 100MHz 100mA 150MHz PDF

    STV2160

    Abstract: stv*2160 STV2161 philips tv smps SMPS smps 14 pin connector
    Text: Æ T S G S -T H O M S O N * 7 * . R 5 1 D Ê lS liL l g T îia @ fflD Ê g S T V 2 1 61 VIDEO SCANNING PSI PROCESSOR ADVANCE DATA VIDEO PART • RGB INPUT WITH FAST BLANKING SWITCH FOR SCART CONNECTOR ■ RGB INPUT WITH FAST BLANKING FOR ON SCREEN DISPLAY/TELETEXT


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    STV2161 STV2160 stv*2160 STV2161 philips tv smps SMPS smps 14 pin connector PDF

    Untitled

    Abstract: No abstract text available
    Text: /T 7 7 £ S C S -T H O M S O N EintgisoiiLimtsiüintgs STV2162 2H - VIDEO SCANNING PROCESSOR PRO DU CT PREVIEW VIDEO PART • USER CONTROL FUNCTIONS : CONTRAST BRIGHTNESS, SATURATION, COLOR EQUALIZER ■ RGB INPUT WITH FAST-BLANKING FOR ON-SCREEN-DISPLAY/ TELETEXT


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    STV2162 PDF

    IC-8844

    Abstract: PA670 PA670T SC-70A
    Text: "t — ^7 • f y — h v ' J h ^ > V X ^ Silicon Transistor = I > UPA670T N P N X t f t $ r d e '> 77; ^ V ,; = l > h 7 > v x ^ 6 f c f > 2 l§ IS & juPA670T t t , h 7 > V X £ i 2[SS£p*3j& U tz 5. - =E- Jl> K f / w z - r & y , ( U f i : •■ m m )


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    uPA670T juPA670T SC-70/' O//PA671 IC-8844 PA670 PA670T SC-70A PDF

    E3F-DS30

    Abstract: omron e3f omron E3F-DS30 Metal detection sensor distance of 20 cm E3F2-DS30C4 F2-DS30 E3F2-DS10B4 omron E3F2-DS30C4 E3F2-3B4 E3F2-R2C4-E
    Text: omRon z-w ^ TS ;/ E3F2 Photoelectric Sensor Panel-mountable Cylindrical Photoelectric Sensor with Built-in Amplifier for Use as an Optical Proximity Switch • M 18 DIN-sized cylindrical housing, ABS resin case. ■ Simple adjustment by using threaded body.


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    E39-R1) E3F-DS30 omron e3f omron E3F-DS30 Metal detection sensor distance of 20 cm E3F2-DS30C4 F2-DS30 E3F2-DS10B4 omron E3F2-DS30C4 E3F2-3B4 E3F2-R2C4-E PDF

    n50g

    Abstract: 2SA990 PA33 TC5536
    Text: =r — — h vU =i> N E C ^ h ^ >vX 3r Silicon Transistor 2 PNPX fc°$ ¿CV 9 A 9 U =1 > h ^ > V * £ m m o z f-u t • S ¥ t ì : mm • x - y n i- ^ i'if iD f É J iliê Î ô ^ lx liit ï f f li: Ü T S ilT - t o t>m o * a i E * a i t i i B $ * f * § i'c o t - , í i k ü $


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    2SA990 n50g 2SA990 PA33 TC5536 PDF

    7974a

    Abstract: 2SD2403
    Text: ïr — ^ — h '> U =1 > h Silicon Transistor 2SD2403 N P N itf^ v T ^ u ^ v U ju r a « : * « « , 2 S D 2 4 0 3 t t /J 't ë fl» a a* 6 U W x '- ÿ ^ ï - * m m z i> ' p m m x ' f v i - x r m t •# U T * U , D C / D C w m m e : m m ) • K 7 < / * £ iî lC » l? T o


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    2SD2403 2SD2403U 7974a 2SD2403 PDF

    sft 322 transistor

    Abstract: b322 TRANSISTOR Transistor B322 B082 M106 B321 diode sg 5 ts
    Text: 1DI2OOZ-12O 200a g ± / < 7 — : Outline Drawings y < r7 - b :7 > ' > ^ ^ n . - ) U POWER TRANSISTOR MODULE 13 Z1_29 Features • ftflft/E High Voltage y i) KrtJlS • ASO Excellent Safe Operating Area • •m m Including Free Wheeling Diode Insulated Type


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    1DI2OOZ-12O e82988 -B-082 sft 322 transistor b322 TRANSISTOR Transistor B322 B082 M106 B321 diode sg 5 ts PDF