TRANSISTOR 40 Search Results

TRANSISTOR 40 Result Highlights (5)

Part	Manufacturer	Description
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns
XPQR8308QB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL
XPQ1R00AQB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL
TK190U65Z	Toshiba Electronic Devices & Storage Corporation	MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL

TRANSISTOR 40 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
MN1280 Abstract: KGT50N60kda bc547 smd transistor kia1117af transistor smd zG y6 smd transistor MB4213 y4 smd transistor smd transistor zaa KGT25N120NDA Text: Table of Contents SMD THD ▣ Table of Contents 2 ▣ Bipolar Junction Transistor 4 Transistor Line-up PNP Transistor Transistor Line-up (NPN Transistor) Small Signal General Purpose Transistor Current Regulating Device Small Signal Low Noise Transistor	Original	PDF
1N4001 transistor free Abstract: BC337 figure 1N4001 BC337 BU323AP BU323P silicon diode 1N4001 specifications transistor BC337 transistor darlington npn Text: ON Semiconductort BU323AP NPN Silicon Darlington Power Transistor DARLINGTON NPN SILICON POWER TRANSISTOR 400 VOLTS 125 WATTS The BU323AP is a monolithic darlington transistor designed for automotive ignition, switching regulator and motor control applications.	Original	PDF	BU323AP BU323AP r14525 BU323AP/D 1N4001 transistor free BC337 figure 1N4001 BC337 BU323P silicon diode 1N4001 specifications transistor BC337 transistor darlington npn
BC337 rbe Abstract: BC337 figure 1N4001 BC337 BU323AP BU323P diode 1N4001 voltage limitations Text: ON Semiconductort BU323AP NPN Silicon Darlington Power Transistor DARLINGTON NPN SILICON POWER TRANSISTOR 400 VOLTS 125 WATTS The BU323AP is a monolithic darlington transistor designed for automotive ignition, switching regulator and motor control applications.	Original	PDF	BU323AP BU323AP r14525 BU323AP/D BC337 rbe BC337 figure 1N4001 BC337 BU323P diode 1N4001 voltage limitations
Untitled Abstract: No abstract text available Text: MITSUBISHI SEMICONDUCTORS <TRANSISTOR ARRAY> 8-UNIT 400mA DARLIGNON TRANSISTOR ARRAY DESCRIPTION M54583WP is eight-circuit collector-current sink type Darlington transistor arrays. The circuits are made of PNP and NPN transistors. Both the semiconductor integrated	Original	PDF	400mA M54583WP 400mA) M54583 Jul-2011 Jun-2011
M54523 Abstract: pnp 8 transistor array 18P4G 20P2N-A M54583 M54583FP M54583P 8 pin 4v power supply ic Text: MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY> M54583P/FP 8-UNIT 400mA DARLINGTON TRANSISTOR ARRAY DESCRIPTION M54583P and M54583FP are eight-circuit collector-currentsynchronized Darlington transistor arrays. The circuits are made of PNP and NPN transistors. Both the semiconductor	Original	PDF	M54583P/FP 400mA M54583P M54583FP M54583P 400mA) M54523 pnp 8 transistor array 18P4G 20P2N-A M54583 8 pin 4v power supply ic
M54583FP Abstract: pnp darlington array M54523 PNP DARLINGTON ARRAYS 18P4G 20P2N-A M54583 M54583P pnp 8 transistor array Text: MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY> M54583P/FP 8-UNIT 400mA DARLINGTON TRANSISTOR ARRAY DESCRIPTION M54583P and M54583FP are eight-circuit collector-currentsynchronized Darlington transistor arrays. The circuits are made of PNP and NPN transistors. Both the semiconductor	Original	PDF	M54583P/FP 400mA M54583P M54583FP M54583P 400mA) pnp darlington array M54523 PNP DARLINGTON ARRAYS 18P4G 20P2N-A M54583 pnp 8 transistor array
M54522 Abstract: m54566 M54566WP Text: MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY> M54566WP 7-UNIT 400mA DARLINGTON TRANSISTOR ARRAY DESCRIPTION PIN CONFIGURATION M54566WP are seven-circuit collector-current synchronized Darlington transistor arrays. The circuits are made of PNP and NPN transistors. Both the semiconductor	Original	PDF	M54566WP 400mA M54566WP 400mA) M54522 m54566
8 pin 4v power supply ic Abstract: Seven Transistor Array PNP M54222 M54566FP M54566P pnp 8 transistor array pnp DARLINGTON TRANSISTOR ARRAY PNP DARLINGTON ARRAYS Text: MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY> M54566P/FP 7-UNIT 400mA DARLINGTON TRANSISTOR ARRAY DESCRIPTION M54566P and M54566FP are seven-circuit collector-currentsynchronized Darlington transistor arrays. The circuits are made of PNP and NPN transistors. Both the semiconductor	Original	PDF	M54566P/FP 400mA M54566P M54566FP 400mA) 8 pin 4v power supply ic Seven Transistor Array PNP M54222 pnp 8 transistor array pnp DARLINGTON TRANSISTOR ARRAY PNP DARLINGTON ARRAYS
transistor equivalent table Abstract: PBLS4002D Text: PBLS4002D 40 V PNP BISS loadswitch Rev. 01 — 1 December 2004 Objective data sheet 1. Product profile 1.1 General description Low VCEsat PNP transistor and NPN resistor-equipped transistor in a SOT457 SC-74 package. 1.2 Features • ■ ■ ■ ■ Low VCEsat (BISS) transistor and resistor-equipped transistor in one package	Original	PDF	PBLS4002D OT457 SC-74) transistor equivalent table PBLS4002D
Untitled Abstract: No abstract text available Text: OBSOLETE - PLEASE USE ZXTC4591AMC ZXTD4591AM832 MPPS Miniature Package Power Solutions Complementary dual 40V high performance transistor Summary NPN Transistor - VCEO = 40V; RSAT = 195m⍀; IC = 2.5A PNP Transistor - VCEO = -40V; RSAT = 350m⍀; IC = -2A	Original	PDF	ZXTC4591AMC ZXTD4591AM832 D-81541
M54522 Abstract: M54566DP Seven Transistor Array PNP m54566 Text: MITSUBISHI SEMICONDUCTORS <TRANSISTOR ARRAY> M54566DP 7-UNIT 400mA DARLINGTON TRANSISTOR ARRAY DESCRIPTION M54566DP is seven-circuit collector current sink type darlington transistor arrays. The circuits are made of PNP and NPN transistors. Both the semiconductor integrated	Original	PDF	M54566DP 400mA M54566DP 400mA) Jul-2011 M54522 Seven Transistor Array PNP m54566
M54583WP Abstract: in4418 Text: MITSUBISHI SEMICONDUCTORS <TRANSISTOR ARRAY> M54583WP 8-UNIT 400mA DARLIGNON TRANSISTOR ARRAY DESCRIPTION M54583WP is eight-circuit collector-current sink type Darlington transistor arrays. The circuits are made of PNP and NPN transistors. Both the semiconductor integrated	Original	PDF	M54583WP 400mA M54583WP 400mA) Jul-2011 in4418
M54523 Abstract: M54583FP 18P4G 20P2N-A M54583 M54583P pnp 8 transistor array 8-channel PNP darlington array Text: POWEREX MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY> M54583P/FP 8-UNIT 400mA DARLINGTON TRANSISTOR ARRAY DESCRIPTION M54583P and M54583FP are eight-circuit collector-currentsynchronized Darlington transistor arrays. The circuits are made of PNP and NPN transistors. Both the semiconductor	Original	PDF	M54583P/FP 400mA M54583P M54583FP M54583P 400mA) M54523 18P4G 20P2N-A M54583 pnp 8 transistor array 8-channel PNP darlington array
PBLS4004D Abstract: No abstract text available Text: PBLS4004D 40 V PNP BISS loadswitch Rev. 01 — 9 November 2004 Objective data sheet 1. Product profile 1.1 General description Low VCEsat PNP transistor and NPN resistor-equipped transistor in a SOT457 SC-74 package. 1.2 Features • ■ ■ ■ ■ Low VCEsat (BISS) transistor and resistor-equipped transistor in one package	Original	PDF	PBLS4004D OT457 SC-74) PBLS4004D

8 pin 4v power supply ic Abstract: M54222 Seven Transistor Array PNP M54566FP pnp 8 transistor array M54566P transistor arrays 5v m54566 M5422 pnp darlington array Text: POWEREX MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY> M54566P/FP 7-UNIT 400mA DARLINGTON TRANSISTOR ARRAY DESCRIPTION M54566P and M54566FP are seven-circuit collector-currentsynchronized Darlington transistor arrays. The circuits are made of PNP and NPN transistors. Both the semiconductor	Original	PDF	M54566P/FP 400mA M54566P M54566FP 400mA) 8 pin 4v power supply ic M54222 Seven Transistor Array PNP pnp 8 transistor array transistor arrays 5v m54566 M5422 pnp darlington array
Untitled Abstract: No abstract text available Text: STD123ASF Semiconductor NPN Silicon Transistor Features • High β& low saturation transistor. hFE=400 Min. @VCE=1V, Ic=100mA • Suitable for large current drive directly. • Application for IRED Drive transistor in remote transmitter. Ordering Information	Original	PDF	STD123ASF 100mA STD123ASF OT-23F KST-2029-001
PBLS4001D Abstract: 13905 Text: PBLS4001D 40 V PNP BISS loadswitch Rev. 01 — 30 November 2004 Objective data sheet 1. Product profile 1.1 General description Low VCEsat PNP transistor and NPN resistor-equipped transistor in a SOT457 SC-74 package. 1.2 Features • ■ ■ ■ ■ Low VCEsat (BISS) transistor and resistor-equipped transistor in one package	Original	PDF	PBLS4001D OT457 SC-74) PBLS4001D 13905
M54519P Abstract: M54519FP IC M54519P Text: MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY> M54519P/FP 7-UNIT 400mA DARLINGTON TRANSISTOR ARRAY DESCRIPTION M54519P and M54519FP are seven-circuit Darlington transistor arrays. The circuits are made of NPN transistors. Both the semiconductor integrated circuits perform high-current	Original	PDF	M54519P/FP 400mA M54519P M54519FP 400mA) IC M54519P
STD123AS Abstract: No abstract text available Text: STD123AS Semiconductor NPN Silicon Transistor Features • High β& low saturation transistor. hFE=400 Min. @VCE=1V, Ic=100mA • Suitable for large current drive directly. • Application for IRED Drive transistor in remote transmitter. Ordering Information	Original	PDF	STD123AS 100mA OT-23 KSD-T5C016-000 STD123AS
Untitled Abstract: No abstract text available Text: STD123AS Semiconductor NPN Silicon Transistor Features • • • • High β& low saturation transistor. hFE=400 Min. @VCE=1V, Ic=100mA Suitable for large current drive directly. Application for IRED Drive transistor in remote transmitter. Ordering Information	Original	PDF	STD123AS 100mA STD123AS OT-23 KSD-T5C016-001
2SD2696 Abstract: No abstract text available Text: 2SD2696 Transistors Low frequency transistor for amplification 2SD2696 zStructure NPN Silicon Epitaxial Planar Transistor zExternal dimensions (Unit : mm) 1.2 0.32 zFeatures 1) The transistor of 400mA class which went only with 2012 size conventionally is attained in 1208 size.	Original	PDF	2SD2696 400mA 300mA 100mA 2SD2696
mcl610 Abstract: MCA81 MCL611 Transistor Data chart mcl600 mcs6200 transistor 6 B transistor c 2500 MCT4R MCL601 Text: 112 O p to iso Wlato rs A* * A, ~ PACKAGE PRODUCT KEY OUTPUT FORMAT TRANSISTOR TRANSISTOR TRANSISTOR TRANSISTOR TRANSISTOR TRANSISTOR TRANSISTOR MCT2 MCT2E MCT210 MCT26 MCT4 MCT4R* MCT6 A A A A C C B TRANSISTOR MCT66 B TRANSISTOR TRANSISTOR TRANSISTOR TRANSISTOR	OCR Scan	PDF	MCT210 MCT26 MCT66 MCL600 MCL610 MCT81 MCA81 MCL611 Transistor Data chart mcl600 mcs6200 transistor 6 B transistor c 2500 MCT4R MCL601
MCT8 opto Abstract: c1252 MCL601 MCT8 opto switch C1246 4N25 4N26 4N27 4N28 4N35 Text: 112 O p to iso lato rs A * * W A , ~ PACKAGE PRODUCT KEY OUTPUT FORM AT TRANSISTOR TRANSISTOR TRANSISTOR TRANSISTOR TRANSISTOR TRANSISTOR TRANSISTOR MCT2 MCT2E MCT210 MCT26 MCT4 MCT4R* MCT6 A A A A C C B TRANSISTOR MCT66 B TRANSISTOR TRANSISTOR TRANSISTOR	OCR Scan	PDF	MCT210 MCT26 MCT66 C1255 10TT1. MCT8 opto c1252 MCL601 MCT8 opto switch C1246 4N25 4N26 4N27 4N28 4N35
TP3400 Abstract: No abstract text available Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA TP3400 The RF Line UHF Linear Power Transistor 'C = 400 mA UHF LINEAR TRANSISTOR NPN SILICON The TP3400 is a NPN transistor gold metallized for reliability. The transition frequency of 3 GHz make this transistor a high gain — high output	OCR Scan	PDF	TP3400 TP3400

TRANSISTOR 40 Search Results

TRANSISTOR 40 Result Highlights (5)

TRANSISTOR 40 Datasheets Context Search

MN1280

1N4001 transistor free

BC337 rbe

Untitled

M54523

M54583FP

M54522

8 pin 4v power supply ic

transistor equivalent table

Untitled

M54522

M54583WP

M54523

PBLS4004D

8 pin 4v power supply ic

Untitled

PBLS4001D

M54519P

STD123AS

Untitled

2SD2696

mcl610

MCT8 opto

TP3400