Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    TRANSISTOR 400V 500MA Search Results

    TRANSISTOR 400V 500MA Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR 400V 500MA Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    ZXTN08400BFF

    Abstract: ZXTN08400BFFTA ZXTP08400BFF sot23 6 device Marking
    Text: ZXTN08400BFF 400V, SOT23F, NPN medium power high voltage transistor Summary BVCEX > 450V BVCEO > 400V BVECO > 6V IC cont = 0.5A VCE(sat) < 175mV @ 500mA PD = 1.5W Complementary part number ZXTP08400BFF Description C This NPN transistor has been designed for applications requiring high


    Original     		PDF ZXTN08400BFF OT23F, 175mV 500mA ZXTP08400BFF OT23F ZXTN08400BFF ZXTN08400BFFTA ZXTP08400BFF sot23 6 device Marking

    TRANSISTOR MARKING 1d5

    Abstract: No abstract text available
    Text: ZXTN08400BFF 400V, SOT23F, NPN medium power high voltage transistor Summary BVCEX > 450V BVCEO > 400V BVECO > 6V IC cont = 0.5A VCE(sat) < 175mV @ 500mA PD = 1.5W Complementary part number ZXTP08400BFF Description C This NPN transistor has been designed for applications requiring high


    Original     		PDF ZXTN08400BFF OT23F, 175mV 500mA ZXTP08400BFF OT23F TRANSISTOR MARKING 1d5

    Untitled

    Abstract: No abstract text available
    Text: A Product Line of Diodes Incorporated FZT658 Green 400V NPN HIGH VOLTAGE TRANSISTOR IN SOT223 Features Mechanical Data • • • • • BVCEO > 400V IC = 500mA High Continuous Current ICM = 1A Peak Pulse Current Low Saturation Voltage VCE SAT < 250mV @ 50mA


    Original     		PDF FZT658 OT223 500mA 250mV 200mA J-STD-020 MIL-STD-202, FZT758

    fmmt558

    Abstract: fmmt558ta DS-33101
    Text: A Product Line of Diodes Incorporated FMMT558 400V PNP HIGH VOLTAGE TRANSISTOR IN SOT23 Features Mechanical Data • BVCEO > -400V • • IC = -150mA high Continuous Collector Current • Case material: molded plastic. “Green” molding compound. • ICM = -500mA Peak Pulse Current


    Original     		PDF FMMT558 -400V -150mA -500mA 500mW -100mA FMMT458 AEC-Q101 J-STD-020 MIL-STD-202, fmmt558 fmmt558ta DS-33101

    Untitled

    Abstract: No abstract text available
    Text: A Product Line of Diodes Incorporated FZT958 Green 400V PNP MEDIUM POWER TRANSISTOR IN SOT223 Features Mechanical Data • • • • • • • • • • • • • BVCEO > -400V IC = -0.5A high Continuous Collector Current ICM = -1.5A Peak Pulse Current


    Original     		PDF FZT958 OT223 -400V -400mV AEC-Q101 OT223 J-STD-020 MIL-STD-202, FZT958 DS36166

    MJ13002

    Abstract: No abstract text available
    Text: FORWARD INTERNATIONAL ELECTRONICS LTD. SEMICONDUCTOR TECHNICAL DATA MJ13002 NPN TRIPLE DIFFUSED SILICON TRANSISTOR HIGH VOLTAGE TRANSISTOR Package: TO-92 * Suitable for switching Regulator and Motor Control Collector-Emitter Voltage Vceo=400V * Collector Dissipation Pc Max =750mW (Ta=250C)


    Original     		PDF MJ13002 750mW 100mA 200mA 500mA MJ13002

    TRANSISTOR 400V 500mA

    Abstract: NTE2579 250V 1A IE 420
    Text: NTE2579 Silicon NPN Transistor High Voltage, High Speed Switch Features: D Fast Switching Speed D Low Saturation Voltage Absolute Maximum Ratings: TA = +25°C unless otherwise specified Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 400V


    Original     		PDF NTE2579 500mA 500mA, TRANSISTOR 400V 500mA NTE2579 250V 1A IE 420

    2SC4107

    Abstract: ITR06315 ITR06316 ITR06313 ITR06314
    Text: Ordering number:ENN2472A NPN Triple Diffused Planar Silicon Transistor 2SC4107 400V/10A Switching Regulator Applications Features Package Dimensions • High breakdown voltage and high reliability. · High-speed switching . · Wide ASO. · Adoption of MBIT process.


    Original     		PDF ENN2472A 2SC4107 00V/10A 2010C 2SC4107] O-220AB 2SC4107 ITR06315 ITR06316 ITR06313 ITR06314

    2SC4110

    Abstract: ITR06340 ITR06341 ITR06342 ITR06343 24752
    Text: Ordering number:ENN2475C NPN Triple Diffused Planar Silicon Transistor 2SC4110 400V/25A Switching Regulator Applications Features Package Dimensions • High breakdown voltage and high reliability. · Fast switching speed. · Wide ASO. · Adoption of MBIT process.


    Original     		PDF ENN2475C 2SC4110 00V/25A 2SC4110] 2SC4110 ITR06340 ITR06341 ITR06342 ITR06343 24752

    2SC4105

    Abstract: ITR06295 ITR06296 ITR06297 ITR06298 24703
    Text: Ordering number:ENN2470A NPN Triple Diffused Planar Silicon Transistor 2SC4105 400V/4A Switching Regulator Applications Features Package Dimensions • High breakdown voltage and high reliability. · High-speed switching. · Wide ASO. · Adoption of MBIT process.


    Original     		PDF ENN2470A 2SC4105 00V/4A 2010C 2SC4105] O-220AB 2SC4105 ITR06295 ITR06296 ITR06297 ITR06298 24703

    2SC4106

    Abstract: transistor 2sc4106 ITR06304 ITR06305 ITR06306 ITR06307
    Text: Ordering number:ENN2471A NPN Triple Diffused Planar Silicon Transistor 2SC4106 400V/7A Switching Regulator Applications Features Package Dimensions • High breakdown voltage and high reliability. · High-speed switching. · Wide ASO. · Adoption of MBIT process.


    Original     		PDF ENN2471A 2SC4106 00V/7A 2010C 2SC4106] O-220AB 2SC4106 transistor 2sc4106 ITR06304 ITR06305 ITR06306 ITR06307

    Untitled

    Abstract: No abstract text available
    Text: Ordering number : ENN2475C NPN Triple Diffused Planar Silicon Transistor 2SC4110 400V/25A Switching Regulator Applications Features Package Dimensions • High breakdown voltage and high reliability. · Fast switching speed. · Wide ASO. · Adoption of MBIT process.


    Original     		PDF ENN2475C 2SC4110 00V/25A 2SC4110] 2SC4110/D

    PPAP

    Abstract: 558 SOT23 DS3310 fmmt558
    Text: A Product Line of Diodes Incorporated FMMT558 400V PNP SILICON PLANAR HIGH VOLTAGE TRANSISTOR IN SOT23 Features Mechanical Data • • • • • • • • • • • • • • • 500mW Power dissipation 150mA Continuous collector current 500mA Peak Pulse Current


    Original     		PDF FMMT558 500mW 150mA 500mA 100mA FMMT458 AEC-Q101 J-STD-020 MIL-STD-202, PPAP 558 SOT23 DS3310 fmmt558

    2SC4162

    Abstract: ITR06410 ITR06411 ITR06412 ITR06413
    Text: 2SC4162 Ordering number : EN2483D SANYO Semiconductors DATA SHEET NPN Triple Diffused Planar Silicon Transistor 2SC4162 400V / 10A Switching Regulator Applications Features • • • • • High breakdown voltage, high reliability. High-speed switching tf : 0.1µs typ .


    Original     		PDF 2SC4162 EN2483D 2SC4162 ITR06410 ITR06411 ITR06412 ITR06413

    BUY69

    Abstract: BUY69A NPN Transistor VCEO 1000V
    Text: BUY69A High Voltage Power Transistor High Voltage Power Switch are designed for horizontal deflection output stage of CTV receivers and high voltage, fast switching and industrial application. Features: • Collector-Emitter Sustaining Voltage-100mA VCEO sus = 400V (Minimum).


    Original     		PDF BUY69A Voltage-100mA BUY69 BUY69A NPN Transistor VCEO 1000V

    2SC4425

    Abstract: ITR06830 ITR06831 ITR06832 NPN 400V 40A
    Text: Ordering number:ENN2848A NPN Triple Diffused Planar Silicon Transistor 2SC4425 400V/25A Switching Regulator Applications Features Package Dimensions • High breakdown voltage, high reliability. · Fast switching speed tf : 0.1µs typ . · Wide ASO. · Adoption of MBIT process.


    Original     		PDF ENN2848A 2SC4425 00V/25A 2039D 2SC4425] 2SC4425 ITR06830 ITR06831 ITR06832 NPN 400V 40A

    2SC4220

    Abstract: ITR06508 ITR06509 ITR06510 ITR06511
    Text: Ordering number:ENN2825A NPN Triple Diffused Planar Silicon Transistor 2SC4220 400V/7A Switching Regulator Applications Features Package Dimensions • High breakdown voltage, high reliability. · High-speed switching tf=0.1µs typ . · Wide ASO. · Adoption of MBIT process.


    Original     		PDF ENN2825A 2SC4220 00V/7A 2049C 2SC4220] O-220MF 2SC4220 ITR06508 ITR06509 ITR06510 ITR06511

    2SC4161

    Abstract: transistor 2sc4161
    Text: Ordering number:ENN2482 NPN Triple Diffused Planar Silicon Transistor 2SC4161 400V/7A Switching Regulator Applications Features Package Dimensions • High breakdown voltage, high reliability. · High-speed switching tf=0.1µs typ . · Wide ASO. · Adoption of MBIT process.


    Original     		PDF ENN2482 2SC4161 00V/7A 2SC4161] 2SC4161 transistor 2sc4161

    DFN1006-3

    Abstract: No abstract text available
    Text: DSS3540M 40V LOW VCE sat PNP SURFACE MOUNT TRANSISTOR Features Mechanical Data • • • • • • • • Low Collector-Emitter Saturation Voltage, VCE(sat) Ultra-Small Leadless Surface Mount Package ESD: HBM 8kV, MM 400V Complementary NPN Type Available (DSS2540M)


    Original     		PDF DSS3540M DSS2540M) DFN1006-3 J-STD-020 MIL-STD-202, DFN1006-3 DS31821

    Untitled

    Abstract: No abstract text available
    Text: DSS3515M 15V LOW VCE sat PNP SURFACE MOUNT TRANSISTOR Features Mechanical Data • • • • • • • • Low Collector-Emitter Saturation Voltage, VCE(sat) Ultra-Small Leadless Surface Mount Package ESD: HBM 8kV, MM 400V Complementary NPN Type Available (DSS2515M)


    Original     		PDF DSS3515M DSS2515M) DFN1006-3 J-STD-020 MIL-STD-202, DFN1006-3 DS31819

    DFN1006-3

    Abstract: DSS2515M DSS3515M DSS3515M-7 DSS3515M-7B pnp transistor 400V 500mA
    Text: DSS3515M 15V LOW VCE sat PNP SURFACE MOUNT TRANSISTOR Features Mechanical Data • • • • • • • • Low Collector-Emitter Saturation Voltage, VCE(sat) Ultra-Small Leadless Surface Mount Package ESD: HBM 8kV, MM 400V Complementary NPN Type Available (DSS2515M)


    Original     		PDF DSS3515M DSS2515M) DFN1006-3 J-STD-020 MIL-STD-202, DS31819 DFN1006-3 DSS2515M DSS3515M DSS3515M-7 DSS3515M-7B pnp transistor 400V 500mA

    DFN1006-3

    Abstract: DSS2515M DSS2515M-7 DSS2515M-7B DSS3515M pnp transistor 400V 500mA
    Text: DSS2515M 15V LOW VCE sat NPN SURFACE MOUNT TRANSISTOR Features Mechanical Data • • • • • • • • Low Collector-Emitter Saturation Voltage, VCE(sat) Ultra-Small Leadless Surface Mount Package ESD HBM SKV MM 400V Complementary PNP Type Available (DSS3515M)


    Original     		PDF DSS2515M DSS3515M) DFN1006-3 J-STD-020 MIL-STD-202, DS31816 DFN1006-3 DSS2515M DSS2515M-7 DSS2515M-7B DSS3515M pnp transistor 400V 500mA

    Untitled

    Abstract: No abstract text available
    Text: Ordering number: EN 3512B _ 2SA1786/2SC4646 2SA1786:PNP Epitaxial Planar Silicon Transistor 2SC4646:NFN Triple Diffused Planar Silicon Transistor High Voltage Driver Applications Features • Large current capacity Ic = 2A • High breakdown voltage (Vceo = 400V)


    OCR Scan     		PDF 3512B 2SA1786/2SC4646 2SA1786 2SC4646 2SA1786 12894TH AX-8287/4231MH 5180TA X-6912

    transistor on 4409

    Abstract: on 4409 5SA18 2SC473 2SC4734 transistor t5c 2SA1830 5sa1
    Text: Ordering num ber:EN4409 2SA1830/2SC4734 2SA1830 : PNP Epitaxial Planar Silicon Transistor No.4409 2SC4734 : NPN Triple Diffused Planar Silicon Transistor High-Voltage Driver Applications Features • Large current capacity Ic = 2A . • High breakdown voltage (Vceo = 400V).


    OCR Scan     		PDF EN4409 2SA1830/2SC4734 2SA1830 2SC4734 2SA1830/2SC4734 transistor on 4409 on 4409 5SA18 2SC473 2SC4734 transistor t5c 2SA1830 5sa1