TRANSISTOR 500 Search Results

TRANSISTOR 500 Result Highlights (5)

Part	Manufacturer	Description
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns
XPQR8308QB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL
XPQ1R00AQB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL
TK190U65Z	Toshiba Electronic Devices & Storage Corporation	MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL

TRANSISTOR 500 Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
MN1280 Abstract: KGT50N60kda bc547 smd transistor kia1117af transistor smd zG y6 smd transistor MB4213 y4 smd transistor smd transistor zaa KGT25N120NDA Text: Table of Contents SMD THD ▣ Table of Contents 2 ▣ Bipolar Junction Transistor 4 Transistor Line-up PNP Transistor Transistor Line-up (NPN Transistor) Small Signal General Purpose Transistor Current Regulating Device Small Signal Low Noise Transistor	Original		PDF
IMX17 Abstract: 2SD1484K dual transistor Text: UTC IMX17 DUAL TRANSISTOR GENERAL PURPOSE DUAL TRANSISTOR FEATURES Two 2SD1484K chips in an SMT package. Mounting possible with SMT3 automatic mounting machine. Transistor elements are independent, eliminating interference. High collector current. Ic=500mA	Original	IMX17 2SD1484K 500mA OT-26 QW-R215-001 IMX17 dual transistor	PDF
DUAL TRANSISTOR Abstract: No abstract text available Text: UNISONIC TECHNOLOGIES CO., IMT17 DUAL TRANSISTOR GENERAL PURPOSE DUAL TRANSISTOR FEATURES Two MMBT2907A chips in an SMT package. Transistor elements are independent, eliminating interference. *High collector current. Ic = -500mA EQUIVALENT CIRCUITS	Original	IMT17 MMBT2907A -500mA IMT17L-AG6 IMT17G-AG6-R OT-26 QW-R215-006 DUAL TRANSISTOR	PDF
Untitled Abstract: No abstract text available Text: UTC IMX17 DUAL TRANSISTOR GENERAL PURPOSE DUAL TRANSISTOR FEATURES Two 2SD1484K chips in an SMT package. Mounting possible with SMT3 automatic mounting machine. Transistor elements are independent, eliminating interference. High collector current. Ic=500mA	Original	IMX17 2SD1484K 500mA OT-26 QW-R215-001 500mA, 100mA -20mA, 100MHz	PDF
M63828DP Abstract: 16PIN M63828WP 16P4X-A IL500 Text: MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY> M63828WP/DP Taiwan A’ssy product 7-UNIT 500mA DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE DESCRIPTION M63828WP and M63828DP are seven-circuit Darlington transistor arrays with clamping diodes. The circuits are made	Original	M63828WP/DP 500mA M63828WP M63828DP 500mA) 16P2X-B 16P2X-B 16PIN 16P4X-A IL500	PDF
IL500 Abstract: No abstract text available Text: MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY> M63827WP/DP Taiwan A’ssy product 7-UNIT 500mA DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE DESCRIPTION M63827WP and M63827DP are seven-circuit Darlington transistor arrays with clamping diodes. The circuits are made	Original	M63827WP/DP 500mA M63827WP M63827DP 500mA) 16P2X-B 16P2X-B 16PIN IL500	PDF
18P4G Abstract: 20P2N-A M54562FP M54562P pnp darlington array pnp 8 transistor array npn 8 transistor array 24 "transistor array" Text: POWEREX MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY> M54562P/FP 8-UNIT 500mA SOURCE TYPE DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE DESCRIPTION M54562P and M54562FP are eight-circuit output-sourcing Darlington transistor arrays. The circuits are made of PNP	Original	M54562P/FP 500mA M54562P M54562FP 500mA) 18P4G 20P2N-A pnp darlington array pnp 8 transistor array npn 8 transistor array 24 "transistor array"	PDF
M63827DP Abstract: M63827WP 16PIN 16P4X-A IL500 Text: MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY> M63827WP/DP Taiwan A’ssy product 7-UNIT 500mA DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE DESCRIPTION M63827WP and M63827DP are seven-circuit Darlington transistor arrays with clamping diodes. The circuits are made	Original	M63827WP/DP 500mA M63827WP M63827DP 500mA) 16P2X-B 16P2X-B 16PIN 16P4X-A IL500	PDF
Untitled Abstract: No abstract text available Text: MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY> M63828WP/DP Taiwan A’ssy product 7-UNIT 500mA DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE DESCRIPTION M63828WP and M63828DP are seven-circuit Darlington transistor arrays with clamping diodes. The circuits are made	Original	M63828WP/DP 500mA M63828WP M63828DP 500mA) 16P2X-B 16P2X-B 16PIN	PDF
5R380CE Abstract: IPA50R380CE 5R38 IPI50R380CE IPP50R380CE ID032 5r380 Text: MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS CE 500V CoolMOS CE Power Transistor IPx50R380CE Data Sheet Rev. 2.0, 2010-08-27 Final Industrial & Multimarket 500V CoolMOS™ CE Power Transistor 1 IPP50R380CE, IPA50R380CE IPI50R380CE Description	Original	IPx50R380CE IPP50R380CE, IPA50R380CE IPI50R380CE 5R380CE 5R38 IPI50R380CE IPP50R380CE ID032 5r380	PDF
Untitled Abstract: No abstract text available Text: MITSUBISHI SEMICONDUCTORS <TRANSISTOR ARRAY> 8-UNIT 500mA SOURCE TYPE DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE DESCRIPTION M54563WP is eight-circuit output-sourcing darlington transistor array. The circuits are made of PNP and NPN transistors. This semiconductor integrated circuit	Original	500mA M54563WP 500mA) Jul-2011 Jun-2011	PDF
2SA1036 Abstract: IMT17 IMT17-AG6-R IMT17L-AG6-R Text: UNISONIC TECHNOLOGIES CO., IMT17 DUAL TRANSISTOR GENERAL PURPOSE DUAL TRANSISTOR FEATURES 4 Two 2SA1036 chips in an SMT package. Transistor elements are independent, eliminating interference. *High collector current. Ic = - 500mA 5 6 3 STRUCTURE 4 5 2 1	Original	IMT17 2SA1036 500mA OT-26 IMT17L IMT17-AG6-R IMT17L-AG6-R QW-R215-006 IMT17 IMT17-AG6-R IMT17L-AG6-R	PDF
pnp darlington array Abstract: PNP DARLINGTON SINK DRIVER 500ma pnp 8 transistor array pnp DARLINGTON TRANSISTOR ARRAY darlington Mitsubishi M54585 darlington array M54587 20P2N-A M54587FP Text: MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY> M54587P/FP 8-UNIT 500mA DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE DESCRIPTION M54587P and M54587FP are eight-circuit collector-currentsynchronized Darlington transistor arrays. The circuits are made of PNP and NPN transistors. Both the semiconductor	Original	M54587P/FP 500mA M54587P M54587FP pnp darlington array PNP DARLINGTON SINK DRIVER 500ma pnp 8 transistor array pnp DARLINGTON TRANSISTOR ARRAY darlington Mitsubishi M54585 darlington array M54587 20P2N-A	PDF
M54563WP Abstract: 24 V pnp 8 transistor array pnp DARLINGTON TRANSISTOR ARRAY pnp 8 darlington array pnp 8 transistor array ttl Text: MITSUBISHI SEMICONDUCTORS <TRANSISTOR ARRAY> M54563WP 8-UNIT 500mA SOURCE TYPE DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE DESCRIPTION M54563WP is eight-circuit output-sourcing darlington transistor array. The circuits are made of PNP and NPN transistors. This semiconductor integrated circuit	Original	M54563WP 500mA M54563WP 500mA) Jul-2011 24 V pnp 8 transistor array pnp DARLINGTON TRANSISTOR ARRAY pnp 8 darlington array pnp 8 transistor array ttl	PDF

Untitled Abstract: No abstract text available Text: UNISONIC TECHNOLOGIES CO., LTD 2SB1132 PNP SILICON TRANSISTOR MEDIUM POWER TRANSISTOR DESCRIPTION  The UTC 2SB1132 is a epitaxial planar type PNP silicon transistor.  FEATURES * Low VCE SAT . VCE(SAT) = -0.2V(Typ.) (IC / IB= -500mA / -50mA)  ORDERING INFORMATION	Original	2SB1132 2SB1132 -500mA -50mA) 2SB1132G-x-AB3-R OT-89 2SB1132G-x-AL3-R OT-323 2SB1132L-x-TN3-R 2SB1132G-x-TN3-R	PDF
M54516P Abstract: No abstract text available Text: MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY> M54516P 5-UNIT 500mA DARLINGTON TRANSISTOR ARRAY DESCRIPTION M54516P is five-circuit Darlington transistor arrays. The circuits are made of NPN transistors. Both the semiconductor integrated circuits perform high-current driving with extremely low input-current supply.	Original	M54516P 500mA M54516P 500mA)	PDF
M54585FP Abstract: M54585P 18P4G 20P2N-A npn 8 transistor array 24 "transistor array" M54585 Text: POWEREX MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY> M54585P/FP 8-UNIT 500mA DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE DESCRIPTION M54585P and M54585FP are eight-circuit Darlington transistor arrays with clamping diodes. The circuits are made of NPN transistors. Both the semiconductor integrated circuits	Original	M54585P/FP 500mA M54585P M54585FP 500mA) 18P4G 20P2N-A npn 8 transistor array 24 "transistor array" M54585	PDF
M54585P Abstract: M54585FP common collector npn array 18P4G 20P2N-A npn 8 transistor array Text: MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY> M54585P/FP 8-UNIT 500mA DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE DESCRIPTION M54585P and M54585FP are eight-circuit Darlington transistor arrays with clamping diodes. The circuits are made of NPN transistors. Both the semiconductor integrated circuits	Original	M54585P/FP 500mA M54585P M54585FP 500mA) common collector npn array 18P4G 20P2N-A npn 8 transistor array	PDF
Untitled Abstract: No abstract text available Text: UNISONIC TECHNOLOGIES CO., LTD 2SD1664 NPN SILICON TRANSISTOR MEDIUM POWER NPN TRANSISTOR  DESCRIPTION The UTC 2SD1664 is an epitaxial planar type NPN silicon transistor.  FEATURES Low VCE SAT : VCE (SAT)= 0.15V(Typ.) (IC/IB= 500mA/50mA) Complement the 2SB1132.	Original	2SD1664 2SD1664 500mA/50mA) 2SB1132. 2SD1664G-x-AB3-R 2SD1664G-x-AE3-R OT-89 OT-23	PDF
DARLINGTON TRANSISTOR ARRAY Abstract: No abstract text available Text: <TRANSISTOR ARRAY> M63840FP 8-UNIT 500mA DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE SOURCE TYPE DESCRIPTION PIN CONFIGURATION M63840FP are eight-circuit output-sourcing Darlington transistor array. The circuits are made of PNP and NPN transistors. Both the semiconductor integrated circuits perform	Original	M63840FP 500mA M63840FP 500mA) 20P2N-A DARLINGTON TRANSISTOR ARRAY	PDF
Untitled Abstract: No abstract text available Text: MITSUBISHI SEMICONDUCTORS <TRANSISTOR ARRAY> 8-UNIT 500mA SOURCE TYPE DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE DESCRIPTION M54562WP is an eight-circuit output-sourcing darlington transistor array. The circuits are made of PNP and NPN transistors. This semiconductor integrated circuit	Original	500mA M54562WP 500mA) Jul-2011	PDF
Untitled Abstract: No abstract text available Text: <TRANSISTOR ARRAY> M63840KP 8-UNIT 500mA DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE SOURCE TYPE DESCRIPTION PIN CONFIGURATION M63840KP are eight-circuit output-sourcing Darlington transistor array. The circuits are made of PNP and NPN transistors. Both the semiconductor integrated circuits perform	Original	M63840KP 500mA M63840KP 500mA) 20P2F-A	PDF
mcl610 Abstract: MCA81 MCL611 Transistor Data chart mcl600 mcs6200 transistor 6 B transistor c 2500 MCT4R MCL601 Text: 112 O p to iso Wlato rs A* * A, ~ PACKAGE PRODUCT KEY OUTPUT FORMAT TRANSISTOR TRANSISTOR TRANSISTOR TRANSISTOR TRANSISTOR TRANSISTOR TRANSISTOR MCT2 MCT2E MCT210 MCT26 MCT4 MCT4R* MCT6 A A A A C C B TRANSISTOR MCT66 B TRANSISTOR TRANSISTOR TRANSISTOR TRANSISTOR	OCR Scan	MCT210 MCT26 MCT66 MCL600 MCL610 MCT81 MCA81 MCL611 Transistor Data chart mcl600 mcs6200 transistor 6 B transistor c 2500 MCT4R MCL601	PDF
MCT8 opto Abstract: c1252 MCL601 MCT8 opto switch C1246 4N25 4N26 4N27 4N28 4N35 Text: 112 O p to iso lato rs A * * W A , ~ PACKAGE PRODUCT KEY OUTPUT FORM AT TRANSISTOR TRANSISTOR TRANSISTOR TRANSISTOR TRANSISTOR TRANSISTOR TRANSISTOR MCT2 MCT2E MCT210 MCT26 MCT4 MCT4R* MCT6 A A A A C C B TRANSISTOR MCT66 B TRANSISTOR TRANSISTOR TRANSISTOR	OCR Scan	MCT210 MCT26 MCT66 C1255 10TT1. MCT8 opto c1252 MCL601 MCT8 opto switch C1246 4N25 4N26 4N27 4N28 4N35	PDF

TRANSISTOR 500 Search Results

TRANSISTOR 500 Result Highlights (5)

TRANSISTOR 500 Datasheets Context Search

MN1280

IMX17

DUAL TRANSISTOR

Untitled

M63828DP

IL500

18P4G

M63827DP

Untitled

5R380CE

Untitled

2SA1036

pnp darlington array

M54563WP

Untitled

M54516P

M54585FP

M54585P

Untitled

DARLINGTON TRANSISTOR ARRAY

Untitled

Untitled

mcl610

MCT8 opto