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    TRANSISTOR 625 Search Results

    TRANSISTOR 625 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR 625 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    MN1280

    Abstract: KGT50N60kda bc547 smd transistor kia1117af transistor smd zG y6 smd transistor MB4213 y4 smd transistor smd transistor zaa KGT25N120NDA
    Text: Table of Contents SMD THD ▣ Table of Contents 2 ▣ Bipolar Junction Transistor 4 Transistor Line-up PNP Transistor Transistor Line-up (NPN Transistor) Small Signal General Purpose Transistor Current Regulating Device Small Signal Low Noise Transistor


    Original     		PDF

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD MPSA14 Preliminary NPN SILICON TRANSISTOR DARLINGTON TRANSISTOR „ DESCRIPTION The UTC MPSA14 is a Darlington transistor. „ FEATURES * Collector-Emitter Voltage: VCES = 30V * Collector Dissipation: Pc maX = 625mW „ ORDERING INFORMATION


    Original     		PDF MPSA14 MPSA14 625mW MPSA14L-AB3-R MPSA14G-AB3-R MPSA14L-T92-K MPSA14G-T92-K MPSA14L-T92-B MPSA14G-T92-B OT-89

    MPSA13

    Abstract: PT 10000
    Text: UTC MPSA13 NPN EPITAXIAL SILICON TRANSISTOR DARLINGTON TRANSISTOR DESCRIPTION The UTC MPSA13 is a Darlington transistor. FEATURES *Collector-Emitter Voltage: VCES = 30V *Collector Dissipation: Pc mas = 625 mW 1 TO-92 1: EMITTER 2: BASE 3: COLLECTOR ABSOLUTE MAXIMUM RATINGS (Ta=25°C)


    Original     		PDF MPSA13 QW-R201-016 PT 10000

    MPSA13

    Abstract: utc mpsa13
    Text: UTC MPSA13 NPN EPITAXIAL SILICON TRANSISTOR DARLINGTON TRANSISTOR DESCRIPTION The UTC MPSA13 is a Darlington transistor. 1 FEATURES *Collector-Emitter Voltage: VCES = 30V *Collector Dissipation: Pc mas = 625 mW SOT-89 1: EMITTER 2: COLLECTOR 3: BASE ABSOLUTE MAXIMUM RATINGS (Ta=25°C)


    Original     		PDF MPSA13 OT-89 QW-R208-001 utc mpsa13

    MPSA13

    Abstract: vbe 10v, vce 5v NPN Transistor utc mpsa13
    Text: UTC MPSA13 NPN EPITAXIAL SILICON TRANSISTOR DARLINGTON TRANSISTOR DESCRIPTION The UTC MPSA13 is a Darlington transistor. 1 FEATURES *Collector-Emitter Voltage: VCES = 30V *Collector Dissipation: Pc mas = 625 mW SOT-89 1: EMITTER 2: COLLECTOR 3: BASE ABSOLUTE MAXIMUM RATINGS (Ta=25°C)


    Original     		PDF MPSA13 OT-89 100ms QW-R208-001 vbe 10v, vce 5v NPN Transistor utc mpsa13

    Darlington transistor

    Abstract: MPSA13 transistor 625
    Text: UTC MPSA13 NPN EPITAXIAL SILICON TRANSISTOR DARLINGTON TRANSISTOR DESCRIPTION The UTC MPSA13 is a Darlington transistor. FEATURES *Collector-Emitter Voltage: VCES = 30V *Collector Dissipation: Pc mas = 625 mW 1 TO-92 1: EMITTER 2: BASE 3: COLLECTOR ABSOLUTE MAXIMUM RATINGS (Ta=25°C)


    Original     		PDF MPSA13 100ms QW-R201-016 Darlington transistor transistor 625

    Untitled

    Abstract: No abstract text available
    Text: STC2907A PNP Silicon Transistor General Purpose Transistor • Collector-Emitter Voltage: VCEO= 60V • Collector Power Dissipation: PC max =625mW TO-92 1 1. Emitter 2. Base 3. Collector PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted


    Original     		PDF STC2907A 625mW

    npn transistor 433 Mhz

    Abstract: S 170 TRANSISTOR transistor 625 MPSA06 MPSA56 12G-V transistor cb 170
    Text: Shanghai Lunsure Electronic Technology Co.,Ltd Tel:0086-21-37185008 Fax:0086-21-57152769 MPSA06 Features l NPN Small Signal Transistor 625 mW NPN Silicon Epitaxial planar Transistor for switching and amplifier applications l As complementary type, the PNP transistor is MPSA56


    Original     		PDF MPSA06 MPSA56 100mA, 100mA 100MHz npn transistor 433 Mhz S 170 TRANSISTOR transistor 625 MPSA06 MPSA56 12G-V transistor cb 170

    STC2222

    Abstract: No abstract text available
    Text: STC2222A NPN Silicon Transistor General Purpose Transistor • Collector-Emitter Voltage: VCEO= 40V • Collector Power Dissipation: PC max =625mW • Refer STC2222 for graphs TO-92 1 1. Emitter 2. Base 3. Collector NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted


    Original     		PDF STC2222A 625mW STC2222

    MPSA14

    Abstract: TRANSISTOR 077 equivalent mpsa14 NPN Transistor 5V DARLINGTON
    Text: UTC MPSA14 NPN EPITAXIAL SILICON TRANSISTOR DARLINGTON TRANSISTOR DESCRIPTION The UTC MPSA14 is a Darlington transistor. FEATURES *Collector-Emitter Voltage: VCES = 30V *Collector Dissipation: Pc mas = 625 mW 1 TO-92 1: EMITTER 2: BASE 3: COLLECTOR ABSOLUTE MAXIMUM RATINGS (Operating temperature range applies unless otherwise specified.)


    Original     		PDF MPSA14 QW-R201-054 TRANSISTOR 077 equivalent mpsa14 NPN Transistor 5V DARLINGTON

    equivalent mpsa14

    Abstract: MPSa14 equivalent MPSA14 transistor darlington
    Text: UTC MPSA14 NPN EPITAXIAL SILICON TRANSISTOR DARLINGTON TRANSISTOR DESCRIPTION The UTC MPSA14 is a Darlington transistor. 1 FEATURES *Collector-Emitter Voltage: VCES = 30V *Collector Dissipation: Pc mas = 625 mW SOT-89 1: EMITTER 2: COLLECTOR 3: BASE ABSOLUTE MAXIMUM RATINGS (Operating temperature range applies unless otherwise specified.)


    Original     		PDF MPSA14 OT-89 QW-R208-008 equivalent mpsa14 MPSa14 equivalent transistor darlington

    TRANSISTOR 077

    Abstract: MPSA113 MPSA11
    Text: UTC MPSA113 NPN EPITAXIAL SILICON TRANSISTOR DARLINGTON TRANSISTOR DESCRIPTION The UTC MPSA113 is a Darlington transistor. FEATURES *Collector-Emitter Voltage: VCES = 30V *Collector Dissipation: Pc mas = 625 mW 1 TO-92 1: EMITTER 2: BASE 3: COLLECTOR ABSOLUTE MAXIMUM RATINGS (Operating temperature range applies unless otherwise specified.)


    Original     		PDF MPSA113 QW-R201-042 TRANSISTOR 077 MPSA11

    MPSA14

    Abstract: transistor 625
    Text: UTC MPSA14 NPN EPITAXIAL SILICON TRANSISTOR DARLINGTON TRANSISTOR DESCRIPTION The UTC MPSA14 is a Darlington transistor. 1 FEATURES *Collector-Emitter Voltage: VCES = 30V *Collector Dissipation: Pc mas = 625 mW SOT-89 1: EMITTER 2: COLLECTOR 3: BASE ABSOLUTE MAXIMUM RATINGS (Operating temperature range applies unless otherwise specified.)


    Original     		PDF MPSA14 OT-89 100mA 100mA 100MHz QW-R208-008 transistor 625

    Untitled

    Abstract: No abstract text available
    Text: UTC MMBTA13 NPN EPITAXIAL SILICON TRANSISTOR DARLINGTON TRANSISTOR DESCRIPTION The UTC MMBTA13 is a darlington transistor. FEATURES 1 *Collector-Emitter Voltage: Vces = 30V *Collector Dissipation : Pc mas = 625 mW SOT-23 1:EMITTER 2:BASE 3:COLLECTOR ABSOLUTE MAXIMUM RATINGS ( Operating temperature range applies unless otherwise specified )


    Original     		PDF MMBTA13 MMBTA13 OT-23 100mA 100mA 100MHz

    oz960

    Abstract: khb*9D5N20P MB4213 KIA78*pI MN1280 F10P048 KIA7812A MJE13007 mb4213 equivalent TRANSISTOR SMD N2 3j
    Text: Table of Contents Index 4 SMD ✞✟ Bipolar Junction Transistors Transistor Line-up PNP Transistor Transistor Line-up (NPN Transistor) Small Signal General Purpose Transistors Small Signal Low Noise Transistors Small Signal Audio Muting Transistors Small Signal High hFE Transistors


    Original     		PDF KIA7900PI TC7SH04FU KIC7SH04FU SC604* KAC3301QN M51943 KIA7042AP/AF TC7SH08FU KIC7SH08FU LT1937 oz960 khb*9D5N20P MB4213 KIA78*pI MN1280 F10P048 KIA7812A MJE13007 mb4213 equivalent TRANSISTOR SMD N2 3j

    transistor marking DG

    Abstract: TRANSISTOR SMD MARKING CODE pa marking code DG SMD Transistor dg transistor smd NXP SMD TRANSISTOR MARKING CODE SMD transistor code 132 transistor smd code marking 101 transistor smd code marking 102 TRANSISTOR SMD CODE PACKAGE SOT363 marking code BV SMD Transistor
    Text: PUML1/DG 50 V, 200 mA NPN general-purpose transistor/ 100 mA NPN resistor-equipped transistor Rev. 01 — 14 July 2008 Product data sheet 1. Product profile 1.1 General description NPN general-purpose transistor and NPN Resistor-Equipped Transistor RET in one


    Original     		PDF OT363 SC-88) AEC-Q101 transistor marking DG TRANSISTOR SMD MARKING CODE pa marking code DG SMD Transistor dg transistor smd NXP SMD TRANSISTOR MARKING CODE SMD transistor code 132 transistor smd code marking 101 transistor smd code marking 102 TRANSISTOR SMD CODE PACKAGE SOT363 marking code BV SMD Transistor

    pin configuration transistor 2n4401

    Abstract: 2N4401 NATIONAL SEMICONDUCTOR 2n4401 configuration 2N4401 - TRANSISTOR 2N4403 NATIONAL SEMICONDUCTOR
    Text: 2N4401 Vishay Semiconductors Small Signal Transistor NPN Features • NPN Silicon Epitaxial Transistor for switching and amplifier applications. • As complementary type, the PNP transistor 2N4403 is recommended. • On special request, this transistor is also manufactured in the pin configuration TO-18.


    Original     		PDF 2N4401 2N4403 OT-23 MMBT4401. 2N4401 2N4401-BULK 2N4401-TAP D-74025 14-Oct-04 pin configuration transistor 2n4401 2N4401 NATIONAL SEMICONDUCTOR 2n4401 configuration 2N4401 - TRANSISTOR 2N4403 NATIONAL SEMICONDUCTOR

    pin configuration NPN transistor 2n3906

    Abstract: 2N3906BU 2N3906 2N3906 hie 2N3906 APPLICATION pin configuration pnp transistor 2n3906 2n3906-type transistor 2n3904
    Text: 2N3906 Vishay Semiconductors Small Signal Transistor PNP Features • PNP Silicon Epitaxial Planar Transistor switching and amplifier applications. • As complementary type, the NPN transistor 2N3904 is recommended. • On special request, this transistor is also manufactured in the pin configuration TO-18.


    Original     		PDF 2N3906 2N3904 OT-23 MMBT3906. 2N3906 2N3906-BULK 2N3906-TAP D-74025 21-Oct-04 pin configuration NPN transistor 2n3906 2N3906BU 2N3906 hie 2N3906 APPLICATION pin configuration pnp transistor 2n3906 2n3906-type transistor 2n3904

    pin configuration NPN transistor 2n3906

    Abstract: 2N3906 2n3906 PNP transistor DC current gain 2N3906 APPLICATION 2n3906 hie 2N3906BU 2N3904 2N3906-BULK 2N3906-TAP MMBT3906
    Text: 2N3906 Vishay Semiconductors Small Signal Transistor PNP Features • PNP Silicon Epitaxial Planar Transistor switching and amplifier applications. • As complementary type, the NPN transistor 2N3904 is recommended. • On special request, this transistor is also manufactured in the pin configuration TO-18.


    Original     		PDF 2N3906 2N3904 OT-23 MMBT3906. 2N3906-BULK 2N3906-TAP D-74025 14-Dec-04 pin configuration NPN transistor 2n3906 2N3906 2n3906 PNP transistor DC current gain 2N3906 APPLICATION 2n3906 hie 2N3906BU 2N3906-TAP MMBT3906

    pin configuration transistor 2n4403

    Abstract: 2N4403 NATIONAL SEMICONDUCTOR 2N4401 NATIONAL SEMICONDUCTOR 2N4403 2N4403-BULK 2N4403-TAP MMBT4403 2N4401 SOT-23 2N4403
    Text: 2N4403 VISHAY Vishay Semiconductors Small Signal Transistor PNP Features • PNP Silicon Epitaxial Planar Transistor for switching and amplifier applications. • As complementary type, the NPN transistor 2N4401 is recommended. • On special request, this transistor is also manufactured in the pin configuration TO-18.


    Original     		PDF 2N4403 2N4401 OT-23 MMBT4403. 2N4403-BUs D-74025 01-Sep-04 pin configuration transistor 2n4403 2N4403 NATIONAL SEMICONDUCTOR 2N4401 NATIONAL SEMICONDUCTOR 2N4403 2N4403-BULK 2N4403-TAP MMBT4403 SOT-23 2N4403

    pin configuration transistor 2n4403

    Abstract: 2N4403 NATIONAL SEMICONDUCTOR 2N4403 NPN Transistor
    Text: 2N4403 VISHAY Vishay Semiconductors Small Signal Transistor PNP Features • PNP Silicon Epitaxial Planar Transistor for switching and amplifier applications. • As complementary type, the NPN transistor 2N4401 is recommended. • On special request, this transistor is also manufactured in the pin configuration TO-18.


    Original     		PDF 2N4403 2N4401 OT-23 MMBT4403. D-74025 18-Aug-04 pin configuration transistor 2n4403 2N4403 NATIONAL SEMICONDUCTOR 2N4403 NPN Transistor

    SQD400AA120

    Abstract: No abstract text available
    Text: TRANSISTOR MODULE SQD400AA120 UL;E76102 （M） SQD400AA120 is a Darlington power transistor module with a high speed, high power Darlington transistor. The transistor has a reverse paralleled fast recovery diode. The mounting base of the module is electrically isolated from Semiconductor elements for


    Original     		PDF SQD400AA120 E76102 SQD400AA120 113max.

    702 TRANSISTOR

    Abstract: SQD400AA100
    Text: TRANSISTOR MODULE SQD400AA100 UL;E76102 （M） SQD400AA100 is a Darlington power transistor module with a high speed, high power Darlington transistor. The transistor has a reverse paralleled fast recovery diode. The mounting base of the module is electrically isolated from Semiconductor elements for


    Original     		PDF SQD400AA100 E76102 SQD400AA100 113max. 100msec10sec 1msec100msec VCC600V 702 TRANSISTOR

    pin configuration NPN transistor 2N3904

    Abstract: PIN CONFIGURATION OF 2N3904 2N3904 2N3904B of 2n3904 transistor 2n3904 pin out 2n3904 application 2N3904TA 2n3904 national pin configuration pnp transistor 2n3904
    Text: 2N3904 Vishay Semiconductors Small Signal Transistor NPN Features • NPN Silicon Epitaxial Planar Transistor for switching and amplifier applications. • As complementary type, the PNP transistor 2N3906 is recommended. • On special request, this transistor is also manufactured in the pin configuration TO-18.


    Original     		PDF 2N3904 2N3906 OT-23 MMBT3904. 2N3904 2N3904-BULK 2N3904-TAP D-74025 21-Oct-04 pin configuration NPN transistor 2N3904 PIN CONFIGURATION OF 2N3904 2N3904B of 2n3904 transistor 2n3904 pin out 2n3904 application 2N3904TA 2n3904 national pin configuration pnp transistor 2n3904