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    TRANSISTOR 6M Search Results

    TRANSISTOR 6M Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR 6M Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    MN1280

    Abstract: KGT50N60kda bc547 smd transistor kia1117af transistor smd zG y6 smd transistor MB4213 y4 smd transistor smd transistor zaa KGT25N120NDA
    Text: Table of Contents SMD THD ▣ Table of Contents 2 ▣ Bipolar Junction Transistor 4 Transistor Line-up PNP Transistor Transistor Line-up (NPN Transistor) Small Signal General Purpose Transistor Current Regulating Device Small Signal Low Noise Transistor


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    oz960

    Abstract: khb*9D5N20P MB4213 KIA78*pI MN1280 F10P048 KIA7812A MJE13007 mb4213 equivalent TRANSISTOR SMD N2 3j
    Text: Table of Contents Index 4 SMD ✞✟ Bipolar Junction Transistors Transistor Line-up PNP Transistor Transistor Line-up (NPN Transistor) Small Signal General Purpose Transistors Small Signal Low Noise Transistors Small Signal Audio Muting Transistors Small Signal High hFE Transistors


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    PDF KIA7900PI TC7SH04FU KIC7SH04FU SC604* KAC3301QN M51943 KIA7042AP/AF TC7SH08FU KIC7SH08FU LT1937 oz960 khb*9D5N20P MB4213 KIA78*pI MN1280 F10P048 KIA7812A MJE13007 mb4213 equivalent TRANSISTOR SMD N2 3j

    germanium transistors PNP

    Abstract: IBM43RF0100 SiGe RF TRANSISTOR pnp germanium transistor SiGe PNP TRANSISTOR MAKING LIST SiGe PNP transistor FMMT2907ATA bipolar transistor ghz s-parameter J1 TRANSISTOR
    Text: Application Note Evaluating the IBM43RF0100 SiGe Low Noise Transistor Introduction The IBM43RF0100 SiGe High Dynamic Range Low Noise Transistor is a silicon-germanium SiGe NPN transistor designed for high performance, low cost applications. IBM’s SiGe manufacturing and packaging techniques result in a transistor with high gain, low noise,


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    PDF IBM43RF0100 IBM43RF0100EV 823Vdc. germanium transistors PNP SiGe RF TRANSISTOR pnp germanium transistor SiGe PNP TRANSISTOR MAKING LIST SiGe PNP transistor FMMT2907ATA bipolar transistor ghz s-parameter J1 TRANSISTOR

    TRANSISTOR Z4

    Abstract: No abstract text available
    Text: an AMP company Radar Pulsed Power Transistor, SW, loops Pulse, 10% Duty PHI 214-6M 1.2 - 1.4 GHz Features NPN Silicon Microwave Power Transistor Common Base Configuration Broadband Class C Operation Interdigitated Geometry Diffused Emitter Ballasting Resistors


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    PDF 214-6M TRANSISTOR Z4

    AA3R

    Abstract: 2SB772S V/AA3R
    Text: UNISONIC TECHNOLOGIES CO., 2SB772S PNP EPITAXIAL SILICON TRANSISTOR MEDIUM POWER LOW VOLTAGE TRANSISTOR DESCRIPTION The UTC 2SB772S is a medium power low voltage transistor, designed for audio power amplifier, DC-DC converter and voltage regulator. FEATURES


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    PDF 2SB772S 2SB772S 2SD882S OT-223 2SB772SL 2SB772S-AA3-R 2SB772SL-AA3-R OT-223 QW-R207-012 AA3R V/AA3R

    SB2202

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD. SB2202 PNP EPITAXIAL SILICON TRANSISTOR MEDIUM POWER LOW VOLTAGE TRANSISTOR  DESCRIPTION The UTC SB2202 is a medium power low voltage transistor, designed for audio power amplifier, DC-DC converter and voltage regulator.


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    PDF SB2202 SB2202 SB2202L-x-TM3-R SB2202G-x-TM3-R SB2202L-x-TN3-T SB2202G-x-TN3-T SB2202L-x-TN3-R SB2202G-x-TN3-R O-251 O-252

    2SB772S-T92-B

    Abstract: 2SB772S-T92-K 2SD882S 2SB772S 2SB772SL-T92-B 2SB772SL-T92-K transistor T 023
    Text: UNISONIC TECHNOLOGIES CO., 2SB772S PNP EPITAXIAL SILICON TRANSISTOR MEDIUM POWER LOW VOLTAGE TRANSISTOR DESCRIPTION The UTC 2SB772S is a medium power low voltage transistor, designed for audio power amplifier, DC-DC converter and voltage regulator. 1 FEATURES


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    PDF 2SB772S 2SB772S 2SD882S 2SB772SL 2SB772S-T92-B 2SB772SL-T92-B 2SB772S-T92-K 2SB772SL-T92-K QW-R201-023 2SD882S 2SB772SL-T92-B 2SB772SL-T92-K transistor T 023

    PW300S

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 2SB772 PNP SILICON TRANSISTOR MEDIUM POWER LOW VOLTAGE TRANSISTOR „ DESCRIPTION The UTC 2SB772 is a medium power low voltage transistor, designed for audio power amplifier, DC-DC converter and voltage regulator. „ FEATURES


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    PDF 2SB772 2SB772 2SD882 2SB772L-x-T60-K 2SB772G-x-T60-K 2SB772L-x-T6C-K 2SB772G-x-T6C-K 2SB772L-x-TM3-T 2SB772G-x-TM3-T 2SB772L-x-TN3-R PW300S

    b72L

    Abstract: IC regulator B72 sot-23
    Text: UNISONIC TECHNOLOGIES CO., LTD B772SS PNP SILICON TRANSISTOR MEDIUM POWER LOW VOLTAGE TRANSISTOR „ DESCRIPTION The UTC B772SS is a medium power low voltage transistor, designed for audio power amplifier, DC-DC converter and voltage regulator. „ FEATURES


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    PDF B772SS B772SS D882SS B772SSL-x-AE3-R B772SSG-x-AE3-R OT-23 2012isonic QW-R206-089 b72L IC regulator B72 sot-23

    2sb772

    Abstract: 2sb772l 2SB772L-x-TN3-R XT60
    Text: UNISONIC TECHNOLOGIES CO., LTD 2SB772 PNP SILICON TRANSISTOR MEDIUM POWER LOW VOLTAGE TRANSISTOR „ DESCRIPTION The UTC 2SB772 is a medium power low voltage transistor, designed for audio power amplifier, DC-DC converter and voltage regulator. „ FEATURES


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    PDF 2SB772 2SB772 2SD882 2SB772L 2SB772G 2SB772-x-T60-K 2SB772-x-T6C-K 2SB772-x-TM3-T 2SB772-x-TN3-R 2SB772-x-T9N-B 2SB772L-x-TN3-R XT60

    2SB772 complement

    Abstract: 2SB772L TO-92NL
    Text: UNISONIC TECHNOLOGIES CO., LTD 2SB772 PNP SILICON TRANSISTOR MEDIUM POWER LOW VOLTAGE TRANSISTOR „ DESCRIPTION The UTC 2SB772 is a medium power low voltage transistor, designed for audio power amplifier, DC-DC converter and voltage regulator. „ FEATURES


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    PDF 2SB772 2SB772 2SD882 2SB772L-x-T60-K 2SB772L-x-T6C-K 2SB772L-x-TM3-T 2SB772L-x-TN3-R 2SB772L-x-T9N-B 2SB772L-x-T9N-K 2SB772G-x-T60-K 2SB772 complement 2SB772L TO-92NL

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD B772SS PNP SILICON TRANSISTOR MEDIUM POWER LOW VOLTAGE TRANSISTOR  DESCRIPTION The UTC B772SS is a medium power low voltage transistor, designed for audio power amplifier, DC-DC converter and voltage regulator.  FEATURES


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    PDF B772SS B772SS D882SS B772SSG-x-AE3-R OT-23 QW-R206-089

    TRANSISTOR b72

    Abstract: B772 D882 datasheet d882 B772SS D882SS b72 voltage regulator B772SSG B772SSG-x-AE3-R b772ssl
    Text: UNISONIC TECHNOLOGIES CO., LTD B772SS PNP SILICON TRANSISTOR MEDIUM POWER LOW VOLTAGE TRANSISTOR „ DESCRIPTION The UTC B772SS is a medium power low voltage transistor, designed for audio power amplifier, DC-DC converter and voltage regulator. „ FEATURES


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    PDF B772SS B772SS D882SS B772SSL B772SSG B772SS-x-AE3-R B772SSL-x-AE3-R B772SSG-x-AE3-R OT-23 QW-R206-089 TRANSISTOR b72 B772 D882 datasheet d882 D882SS b72 voltage regulator B772SSG B772SSG-x-AE3-R b772ssl

    MAPRST1214-150UF

    Abstract: No abstract text available
    Text: MAPRST1214-150UF RADAR PULSED POWER TRANSISTOR 150W, 1.2-1.4 GHz, 6ms Pulse Width, 25% Duty Cycle Preliminary Datasheet Revision 01/14/2003 FEATURES OUTLINE DRAWING ∗ NPN Silicon Microwave Power Transistor ∗ Common Base Configuration ∗ Broadband Class C Operation


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    PDF MAPRST1214-150UF -30dBc MAPRST1214-150UF

    E2 diode

    Abstract: Diode B2x
    Text: TRANSISTOR MODULE QCA30B/QCB30A40/60 UL;E76102 (M) QCA30B and QCB30A are dual Darlington power transistor modules which have series-connected high speed, high power Darlington transistors. Each transistor has a reverse paralleled fast recovery diode. C2E1


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    PDF QCA30B/QCB30A40/60 E76102 QCA30B QCB30A 110TAB 94max 32max 31max 35max 400/600V E2 diode Diode B2x

    2SB772L-T

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., 2SB772 PNP EPITAXIAL SILICON TRANSISTOR MEDIUM POWER LOW VOLTAGE TRANSISTOR DESCRIPTION The UTC 2SB772 is a medium power low voltage transistor, designed for audio power amplifier, DC-DC converter and voltage regulator. 1 FEATURES


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    PDF 2SB772 2SB772 2SD882 O-251 2SB772L 2SB772-TM3-R 2SB772L-TM3-R O-251 QW-R213-016 2SB772L-T

    2SB772SL

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 2SB772S PNP EPITAXIAL SILICON TRANSISTOR MEDIUM POWER LOW VOLTAGE TRANSISTOR DESCRIPTION The UTC 2SB772S is a medium power low voltage transistor, designed for audio power amplifier, DC-DC converter and voltage regulator. 1 FEATURES


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    PDF 2SB772S 2SB772S 2SD882S OT-223 2SB772SL 2SB772S-x-AA3-F-R 2SB772SL-x-AA3-F-R 2SB772SL-x-AA3-F-R QW-R207-012 2SB772SL

    POWER AND MEDIUM POWER TRANSISTOR 2SB772

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO.,LTD. 2SB772 PNP EPITAXIAL SILICON TRANSISTOR MEDIUM POWER LOW VOLTAGE TRANSISTOR DESCRIPTION The UTC 2SB772 is a medium power low voltage transistor, designed for audio power amplifier, DC-DC converter and voltage regulator. 1 FEATURES


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    PDF 2SB772 2SB772 2SD882 O-126C 2SB772L 2SB772-T6C-T 2SB772L-T6C-T O-126C QW-R217-002 POWER AND MEDIUM POWER TRANSISTOR 2SB772

    SB2202

    Abstract: SB2202L-TN3-R SB2202-TN3-R SB2202-TN3-T
    Text: UNISONIC TECHNOLOGIES CO., LTD. SB2202 PNP EPITAXIAL SILICON TRANSISTOR MEDIUM POWER LOW VOLTAGE TRANSISTOR DESCRIPTION The UTC SB2202 is a medium power low voltage transistor, designed for audio power amplifier, DC-DC converter and voltage regulator. 1 FEATURES


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    PDF SB2202 SB2202 O-252 SB2202L SB2202-TN3-R SB2202L-TN3-R SB2202-TN3-T SB2202L-TN3-T SB2202L-TN3-R

    2SB772L

    Abstract: 2SB772 2SB772 TO-252 POWER AND MEDIUM POWER TRANSISTOR 2SB772 2SB772 equivalent 2SB772 complement 2sd882 TO-252 Power Transistors TO-126 Case 2SB772G 2SB772 TO-126
    Text: UNISONIC TECHNOLOGIES CO., LTD 2SB772 PNP SILICON TRANSISTOR MEDIUM POWER LOW VOLTAGE TRANSISTOR „ DESCRIPTION The UTC 2SB772 is a medium power low voltage transistor, designed for audio power amplifier, DC-DC converter and voltage regulator. „ FEATURES


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    PDF 2SB772 2SB772 2SD882 11112SD772L 2SD772G 2SB772-x-T60-K 2SB772-x-T6C-K 2SB772-x-TM3-T 2SB772-x-TN3-R 2SB772-x-T9N-B 2SB772L 2SB772 TO-252 POWER AND MEDIUM POWER TRANSISTOR 2SB772 2SB772 equivalent 2SB772 complement 2sd882 TO-252 Power Transistors TO-126 Case 2SB772G 2SB772 TO-126

    MAPRST1214-030UF

    Abstract: transistor j6 transistor 20 dB 14 ghz
    Text: MAPRST1214-030UF RADAR PULSED POWER TRANSISTOR 30W, 1.2-1.4 GHz, 6ms Pulse Width, 25% Duty Cycle Preliminary Datasheet Revision 01/14/2003 FEATURES OUTLINE DRAWING ∗ NPN Silicon Microwave Power Transistor ∗ Common Base Configuration ∗ Broadband Class C Operation


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    PDF MAPRST1214-030UF -30dBc MAPRST1214-030UF transistor j6 transistor 20 dB 14 ghz

    transistor bc 7-40

    Abstract: 6mbi100fc 6MBI100FC060 American Microsemiconductor 6MBI100FC-060
    Text: 6MBI100FC-060 FUJI Electric IGBT Transistor Module Advancing the Semiconductor Industry Since 1972 Abstract The 6MBI100FC-060 is a discontinued insulated-gate bipolar transistor in a modular package by FUJI Electric, currently in “Last Time Buy” sale through American


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    PDF 6MBI100FC-060Module 6MBI100FC-060 AS/EN/JISQ9100 ISO9001 transistor bc 7-40 6mbi100fc 6MBI100FC060 American Microsemiconductor

    2SB772SS

    Abstract: B72 sot-23
    Text: UNISONIC TECHNOLOGIES CO., LTD 2SB772SS PNP SILICON TRANSISTOR MEDIUM POWER LOW VOLTAGE TRANSISTOR DESCRIPTION 3 The UTC 2SB772SS is a medium power low voltage transistor, designed for audio power amplifier, DC-DC converter and voltage regulator. 1 2 FEATURES


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    PDF 2SB772SS 2SB772SS 2SD882SS OT-23 2SB772SSL 2SB772SS-x-AE3-R 2SB772SSL-x-AE3-R OT-23 2SB772SSL-x-AE3-R B72 sot-23

    Untitled

    Abstract: No abstract text available
    Text: TRANSISTOR M O D U L E S - IS O L A T E D T Y P E SQD50ABKX) SQD50AB is a high speed, high power Darlington transistor designed for use in Resonance circuit. The transistor has a reverse paralleled fast recovery diode. • Vcbo=I000V, 5 2 ± 0 .3 6mir>. 6min,


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    PDF SQD50ABKX) SQD50AB I000V, SQD50AB100 DD0222D