TRANSISTOR 6R125P Search Results

TRANSISTOR 6R125P Result Highlights (5)

Part	ECAD Model	Manufacturer	Description	Download	Buy
TTC5886A		Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns
TTA2097		Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns
XPQR8308QB		Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL
XPQ1R00AQB		Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL
TK190U65Z		Toshiba Electronic Devices & Storage Corporation	MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL

TRANSISTOR 6R125P Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
6r125p Abstract: transistor 6R125P 6R125 IPA60R125CP 6R125P TRANSISTOR JESD22 SP000095275 c25 diode to220 D16 marking code transistor ipa60r125 Text: IPA60R125CP CoolMOS Power Transistor Product Summary Features V DS @ Tj,max • Worldwide best R DS,on in TO220 Fullpak 650 0.125 Ω R DS on ,max@T j= 25°C • Ultra low gate charge V Q g,typ 53 nC • Extreme dv/dt rated • High peak current capability	Original	IPA60R125CP PG-TO220 SP000095275 6R125P 6r125p transistor 6R125P 6R125 IPA60R125CP 6R125P TRANSISTOR JESD22 SP000095275 c25 diode to220 D16 marking code transistor ipa60r125	PDF
6r125p Abstract: transistor 6R125P 6R125 0380r MOSFET MARKING CODE 7V IPP60R125CP 6R125P IPP60R125CP Text: IPP60R125CP CoolMOSTM Power Transistor Product Summary Features V DS • Lowest figure-of-merit R ONxQg R DS on ,max • Ultra low gate charge Q g,typ 600 V 0.125 Ω 53 nC • Extreme dv/dt rated • High peak current capability • Qualified according to JEDEC1) for target applications	Original	IPP60R125CP PG-TO220-3-1 SP000088488 6R125P 6r125p transistor 6R125P 6R125 0380r MOSFET MARKING CODE 7V IPP60R125CP 6R125P IPP60R125CP	PDF
6r125p Abstract: transistor 6R125P PG-TO-247-3-1 Text: IPW60R125CP CoolMOSTM Power Transistor Product Summary Features V DS • Lowest figure-of-merit R ONxQg R DS on ,max • Ultra low gate charge Q g,typ 600 V 0.125 Ω 53 nC • Extreme dv/dt rated • High peak current capability • Qualified according to JEDEC1) for target applications	Original	IPW60R125CP PG-TO247-3-1 SP000088489 6R125P 6r125p transistor 6R125P PG-TO-247-3-1	PDF
6r125p Abstract: transistor 6R125P 6R125 IPP60R125CP JESD22 SP000088488 CA82 Text: IPP60R125CP CoolMOSTM Power Transistor Product Summary Features V DS @ Tj,max • Lowest figure-of-merit R ONxQg 650 0.125 Ω R DS on ,max • Ultra low gate charge V Q g,typ 53 nC • Extreme dv/dt rated • High peak current capability • Qualified according to JEDEC1) for target applications	Original	IPP60R125CP PG-TO220 SP000088488 6R125P 6r125p transistor 6R125P 6R125 IPP60R125CP JESD22 SP000088488 CA82	PDF
6r125p Abstract: transistor 6R125P br A 708 IPW60R125CP JESD22 SP000088489 CA82 6R125 Text: IPW60R125CP CoolMOSTM Power Transistor Product Summary Features V DS @ Tj,max • Lowest figure-of-merit R ONxQg 650 0.125 Ω R DS on ,max • Ultra low gate charge V Q g,typ 53 nC • Extreme dv/dt rated • High peak current capability • Qualified according to JEDEC1) for target applications	Original	IPW60R125CP PG-TO247-3-1 SP000088489 6R125P 6r125p transistor 6R125P br A 708 IPW60R125CP JESD22 SP000088489 CA82 6R125	PDF
6r125p Abstract: 6R125 Text: IPB60R125CP CoolMOSTM Power Transistor Product Summary Features V DS @ Tj,max • Lowest figure-of-merit R ONxQg 650 0.125 Ω R DS on ,max • Ultra low gate charge V Q g,typ 53 nC • Extreme dv/dt rated • High peak current capability • Qualified according to JEDEC1) for target applications	Original	IPB60R125CP PG-TO263 SP000088488 6R125P 6r125p 6R125	PDF
6r125p Abstract: transistor 6R125P 6R125 IPI60R125CP JESD22 CA82 Text: IPI60R125CP CoolMOSTM Power Transistor Product Summary Features V DS @ Tj,max • Lowest figure-of-merit R ONxQg 650 0.125 Ω R DS on ,max • Ultra low gate charge V Q g,typ 53 nC • Extreme dv/dt rated • High peak current capability • Qualified according to JEDEC1) for target applications	Original	IPI60R125CP PG-TO220 PG-TO262 6R125P 6r125p transistor 6R125P 6R125 IPI60R125CP JESD22 CA82	PDF
6R125 Abstract: 6r125p IPP60R125CP transistor 6R125P SMD marking CODE F16 IPB60R125CP JESD22 SP000088488 CA82 IPP60R Text: IPB60R125CP CoolMOSTM Power Transistor Product Summary Features V DS @ Tj,max • Lowest figure-of-merit R ONxQg 650 0.125 Ω R DS on ,max • Ultra low gate charge V Q g,typ 53 nC • Extreme dv/dt rated • High peak current capability • Qualified according to JEDEC1) for target applications	Original	IPB60R125CP PG-TO263 IPP60R125CP PG-TO220 SP000088488 6R125P 6R125 6r125p IPP60R125CP transistor 6R125P SMD marking CODE F16 IPB60R125CP JESD22 SP000088488 CA82 IPP60R	PDF
6r125p Abstract: transistor 6R125P IPW60R125CP JESD22 SP000088489 CA82 6R125 Text: IPW60R125CP CoolMOSTM Power Transistor Product Summary Features V DS @ Tj,max • Lowest figure-of-merit R ONxQg 650 0.125 Ω R DS on ,max • Ultra low gate charge V Q g,typ 53 nC • Extreme dv/dt rated • High peak current capability • Qualified according to JEDEC1) for target applications	Original	IPW60R125CP PG-TO247-3-1 SP000088489 6R125P 6r125p transistor 6R125P IPW60R125CP JESD22 SP000088489 CA82 6R125	PDF
6r125p Abstract: No abstract text available Text: IPP60R125CP CoolMOSTM Power Transistor Product Summary Features V DS @ Tj,max • Lowest figure-of-merit R ONxQg 650 0.125 Ω R DS on ,max • Ultra low gate charge V Q g,typ 53 nC • Extreme dv/dt rated • High peak current capability • Qualified according to JEDEC1) for target applications	Original	IPP60R125CP PG-TO220 SP000088488 6R125P 6r125p	PDF
IPB60R125CP Abstract: 6r125p Text: IPB60R125CP CoolMOSTM Power Transistor Product Summary Features V DS @ Tj,max • Lowest figure-of-merit R ONxQg 650 0.125 Ω R DS on ,max • Ultra low gate charge V 53 Q g,typ nC • Extreme dv/dt rated • High peak current capability • Qualified according to JEDEC1) for target applications	Original	IPB60R125CP PG-TO263 SP000088488 6R125P IPB60R125CP 6r125p	PDF
6r125p Abstract: transistor 6R125P 6R125 IPW60R125CP JESD22 SP000088489 P diode Text: IPW60R125CP CoolMOS Power Transistor Product Summary Features V DS @ Tj,max • Lowest figure-of-merit R ONxQg 650 0.125 Ω R DS on ,max • Ultra low gate charge V Q g,typ 53 nC • Extreme dv/dt rated • High peak current capability • Qualified according to JEDEC1) for target applications	Original	IPW60R125CP PG-TO247-3-1 SP000088489 6R125P 6r125p transistor 6R125P 6R125 IPW60R125CP JESD22 SP000088489 P diode	PDF
6r125p Abstract: 6R125 transistor 6R125P SP000088489 IPW60R125CP JESD22 PG-TO247-3-1 CA82 Text: IPW60R125CP CoolMOS Power Transistor Product Summary Features V DS @ Tj,max • Lowest figure-of-merit R ONxQg 650 0.125 Ω R DS on ,max • Ultra low gate charge V Q g,typ 53 nC • Extreme dv/dt rated • High peak current capability • Qualified according to JEDEC1) for target applications	Original	IPW60R125CP PG-TO247-3-1 SP000088489 6R125P 009-134-A O-247 6r125p 6R125 transistor 6R125P SP000088489 IPW60R125CP JESD22 PG-TO247-3-1 CA82	PDF
6r125p Abstract: transistor 6R125P DF 331 TRANSISTOR transistor df 331 IPA60R125CP CA82 JESD22 PG-TO220-3-31 SP000095275 6R125 Text: IPA60R125CP CoolMOSTM Power Transistor Product Summary Features V DS @ Tj,max • Worldwide best R DS,on in TO220 Fullpak 650 0.125 Ω R DS on ,max • Ultra low gate charge V Q g,typ 53 nC • Extreme dv/dt rated • High peak current capability • Qualified according to JEDEC1) for target applications	Original	IPA60R125CP PG-TO220-3-31 SP000095275 6R125P 6r125p transistor 6R125P DF 331 TRANSISTOR transistor df 331 IPA60R125CP CA82 JESD22 PG-TO220-3-31 SP000095275 6R125	PDF

6r125p Abstract: No abstract text available Text: MOSFET MetalOxideSemiconductorFieldEffectTransistor CoolMOS P6 600VCoolMOS™P6PowerTransistor IPx60R125P6 DataSheet Rev.2.0 Final PowerManagement&Multimarket 600VCoolMOS™P6PowerTransistor IPW60R125P6,IPP60R125P6,IPA60R125P6 1Description	Original	IPx60R125P6 IPW60R125P6, IPP60R125P6, IPA60R125P6 O-247 O-220 6r125p	PDF