TRANSISTOR 729 Search Results

TRANSISTOR 729 Result Highlights (5)

Part	Manufacturer	Description
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns
XPQR8308QB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL
XPQ1R00AQB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL
TK190U65Z	Toshiba Electronic Devices & Storage Corporation	MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL

TRANSISTOR 729 Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
sot467b Abstract: No abstract text available Text: BLF6H10L-160; BLF6H10LS-160 Power LDMOS transistor Rev. 2 — 12 December 2012 Product data sheet 1. Product profile 1.1 General description A 160 W LDMOS RF power transistor for base station applications. The transistor can deliver 160 W from 729 MHz to 960 MHz. The excellent ruggedness and broadband	Original	BLF6H10L-160; BLF6H10LS-160 BLF6H10L-160 6H10LS-160 sot467b	PDF
CA3083 Abstract: pspice high frequency transistor ca3096 transistor bf 760 NPN PNP Transistor Arrays 333E MM9710 2839E BF 949 transistor Text: CA3096 and CA3083 Transistor Array SPICE Models TM July 1997 tle 9 30 nd 08 anr y E - MM9710 Introduction Model Performance This application note describes the SPICE transistor models for the bipolar devices that comprise the CA3096, and the CA3083 High Frequency NPN/PNP Transistor Arrays.	Original	CA3096 CA3083 MM9710 CA3096, CH-1009 pspice high frequency transistor transistor bf 760 NPN PNP Transistor Arrays 333E MM9710 2839E BF 949 transistor	PDF
sot467bpo Abstract: No abstract text available Text: BLF6H10L-160; BLF6H10LS-160 Power LDMOS transistor Rev. 1 — 10 February 2012 Objective data sheet 1. Product profile 1.1 General description A 160 W LDMOS RF power transistor for base station applications. The transistor can deliver 160 W from HF to 1 GHz. The excellent ruggedness and broadband performance	Original	BLF6H10L-160; BLF6H10LS-160 BLF6H10L-160 6H10LS-160 sot467bpo	PDF
MX0912B351Y Abstract: No abstract text available Text: DISCRETE SEMICONDUCTORS DATA SHEET MX0912B351Y NPN microwave power transistor Product specification Supersedes data of November 1994 1997 Feb 19 Philips Semiconductors Product specification NPN microwave power transistor MX0912B351Y FEATURES PINNING - SOT439A	Original	MX0912B351Y OT439A SCA53 127147/00/02/pp12 MX0912B351Y	PDF
MX0912B251Y Abstract: capacitor 470 uF Text: DISCRETE SEMICONDUCTORS DATA SHEET MX0912B251Y NPN microwave power transistor Product specification Supersedes data of November 1994 1997 Feb 19 Philips Semiconductors Product specification NPN microwave power transistor MX0912B251Y FEATURES PINNING - SOT439A	Original	MX0912B251Y OT439A SCA53 127147/00/02/pp12 MX0912B251Y capacitor 470 uF	PDF
la 4440 amplifier circuit diagram 300 watt Abstract: la 4440 amplifier circuit diagram 300 watt diode LT 7229 2sd323 YM 7137 3D DA 3807 pdf transistor inverter welder 4 schematic 2N5630 THYRISTOR br 403 1N3492 Text: Alphanumeric Index Power Transistor Selector Guide Power Transistor Cross Reference Power Transistor Data Sheets Thyristor Selector Guide Thyristor Cross Reference Thyristor Data Sheets Leadforms, Hardware, and Mounting Techniques R ectifier and Zener Diode	OCR Scan	AN-784A la 4440 amplifier circuit diagram 300 watt la 4440 amplifier circuit diagram 300 watt diode LT 7229 2sd323 YM 7137 3D DA 3807 pdf transistor inverter welder 4 schematic 2N5630 THYRISTOR br 403 1N3492	PDF
SD1007 Abstract: SD1007 transistor thomson microwave transistor Text: S —THOMSON SOLID STATE MICROWAVE SD1007 THOMSON-CSF COMPONENTS CORPORATION Montgomery vilje, PÀ 18936 • 215 362-8500 ■ JW X .510-661-7299 . . . CATV/MATV AMPLIFIER TRANSISTOR DESCRIPTION SSM device type SD 1007-1 is a silicon epitaxial NPN-planar transistor	OCR Scan	SD1007 SD1007-1 SD1007 SD1007 transistor thomson microwave transistor	PDF
412 u1A Abstract: 1S697 KD721KA2 u1 3150 transistor kd721K Text: 7294621 PO WE RE X INC ' W M E N E Tfl I>F\| 7ET4LS1 DODSabl 4 — 7 33^ ^ '^ KD721KA2 X Powerex, Inc., Hlllis Street, Youngwood, Pennsylvania 15697 412 925-7272 Dual Darlington Transistor Module 25 Amperes/1000 Volts Description Powerex Dual Darlington Transistor	OCR Scan	KD721KA2 Amperes/1000 KD721KA2 412 u1A 1S697 u1 3150 transistor kd721K	PDF
2sb504 Abstract: KPL 3009 2SB502 BLY34 germanium BF316A BSX12 2SD716, 2SB686 35W amplifiers bf197 acy52 Text: TRANSISTOR DATA TABLES Other Titles of Interest B P 85 International Transistor Equivalents Guide B P286 A R eferen ce G uide to Basic Electronics Terms BP287 A R eferen ce G uide to Practical Electronics Terms n TRANSISTOR DATA TABLES by Hans-Gunther Steidle	OCR Scan		PDF
kd721K Abstract: No abstract text available Text: 7294621 POWE RE X INC ' m Tfl I>F\| 7ET4LS1 DODSabl 4 N E R E K KD721KA2 Powerex, Inc., Hlllis Street, Youngwood, Pennsylvania 15697 412 925-7272 Dual Darlington Transistor Module 25 Amperes/1000 Volts Description Powerex Dual Darlington Transistor Modules are designed for use in	OCR Scan	KD721KA2 Amperes/1000 kd721K	PDF
Untitled Abstract: No abstract text available Text: 729462 1 POWEREX INC Tfi DE \| TSTMbSl O d F s BSS 0 \| ' D fOUPIBt "^-33-35^ KT5m 05 Powerex, Inc., Hlllts Street, Ybungwood, Pennsylvania 1S697 412 925-7272 Split-Dual Darlington Transistor Module 50 Amperes/1200 Volts Description OUTLINE ORAWINQ Powerex Split-Dual Darlington Transistor	OCR Scan	1S697 Amperes/1200 KT521205	PDF
K723 Abstract: KT234520 transistor 236 bipolar power transistor vce 600 volt Text: 7294621 POWEREX INC I O H E R E _ D E I 7 2 i MbSI 0D0SD3b fl D KT234520 K Powemi, Inc., Hlllla Street, ibungwood, Pennsylvania 15697 412 925-7272 Split-Dual Bipolar Transistor Module 200 Amperes/600 Volts Description Powerex Split-Dual Bipolar Transistor	OCR Scan	7-33-2T? KT234S20 KT234520 Amperes/600 15Dia. K723 transistor 236 bipolar power transistor vce 600 volt	PDF
diode t25 4 c6 Abstract: 7421 transistor transistor k 4213 1S697 KT521205 KTS21205 T-33-35 KT-52 Text: fOUPIBt 729462 1 POWEREX INC Tfi DE \| TSTMbSl O d F s BSS 0 \| ' D "^-33-35^ K T5m 05 Powerex, Inc., Hlllts Street, Ybungwood, Pennsylvania 1S697 412 925-7272 Split-Dual Darlington Transistor Module 50 Amperes/1200 Volts Description OUTLINE ORAWINQ Powerex Split-Dual Darlington Transistor	OCR Scan	0DD23Ã KT521205 1S697 Amperes/1200 KT521205 diode t25 4 c6 7421 transistor transistor k 4213 1S697 KTS21205 T-33-35 KT-52	PDF
transistor k 4213 m Abstract: transistor k 4213 1S697 KT521203 KTS21203 Text: 7294621 POWEREX IN C Tfl De \| 7B cm b 2 1 mMEREX 3 j~ ‘ D ' T *i 3 3 -J t5 ; KT521203 Powerex, Inc., Hillis Street, Youngwood, Pennsylvania 15697 412 925-7272 ) Split-Dual Darlington Transistor Module 30 Amperes/1200 Volts Description Powerex.Split-Dual Darlington Transistor	OCR Scan	7Bcmb21 KT521203 Amperes/1200 KT521203 D00S3flM transistor k 4213 m transistor k 4213 1S697 KTS21203	PDF

TACAN transistor Abstract: 200 watts amplifier TACAN 7213-37 Text: Q4C D I 7^2=1337 OaaG135 fi S-THOMSON SO LID STATE MIC ROWAVE SD1528 THOMSON-CSF COMPONENTS CORPORATION MontgomeryviHe, PA 18936• 215 362-8500 wTWX 510-661-7299_ ; MICROWAVE POWER TRANSISTOR IFF, DME, TACAN DESCRIPTION The SSM SD1528 is a gold metalized, silicon NPN power transistor	OCR Scan	OaaG135 SD1528 SD1528 IFF/50 DME/50V TACAN/50 TACAN transistor 200 watts amplifier TACAN 7213-37	PDF
2n6080 Abstract: 2N6083 2N6081 2N6084 2N6082 Thomson-CSF Text: SOLID STATE MICROWAVE 2N 6 08 0 2N6081 2N 6082 2N 6083 2N 6 08 4 THOMSON-CSF COMPONENTS CORPORATION MontgomeryyiUe, PA 18936 • 215 362-8500 ■ TWX 510-661-7299 VHF COMMUNICATIONS TRANSISTOR DESCRIPTION: This line o f epitaxial silicon NPN-planar transistor is designed primarily	OCR Scan	2N6080 2N6081 N6082 2N6083 N6084 250mA 100mA 200mHz 175mHz, 2N6084 2N6082 Thomson-CSF	PDF
Untitled Abstract: No abstract text available Text: Philips Semiconductors Product specification PowerMOS transistor BUK542-60A/B Logic level GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic full-pack	OCR Scan	BUK542-60A/B BUK542 -SOT186	PDF
SD1451 Abstract: transistor sd1451 CQ 730 SD1451-2 TWX510-661-7299 Solid State Microwave Text: S G S— THOMSON ' ” 0 MC~D ?*=1ETE37 aoaaQ7fl 0 SOLID STATE MICROWAVE SD1451 THOMSON-CSF COMPONENTS CORPORATION ; Montgomeryvifle, PA 18936• (215? 362-8500« TWX 510-661-7299 2-30 MHz, 12.5 V SSB POWER TRANSISTOR DESCRIPTION The SD1451 is a 12.5 volt epitaxial silicon NPN planar transistor	OCR Scan	TWX510-661-7299 SD1451 SD1451 transistor sd1451 CQ 730 SD1451-2 TWX510-661-7299 Solid State Microwave	PDF
118-136 mhz Abstract: THOMSON-CSF, RF TRANSISTOR RF Amplifiers Thomson-CSF amplifier Text: S G S-THOMSON OMC D \| 7 ^ 2 3 7 OOaOlll 5 D T ~ ?-*f SOLID STATE MICROWAVE SD1224-2 i THOMSON-CSF COMPONENTS CORPORATION I Montgomeryville, PA 18936• 215 362-8500■ TWX 510-661-7299 _ . ' _; VHF COMMUNICATIONS TRANSISTOR DESCRIPTION The SD1224-2 is an epitaxial silicon NPN-planar transistor designed	OCR Scan	SD1224-2 118-136 mhz THOMSON-CSF, RF TRANSISTOR RF Amplifiers Thomson-CSF amplifier	PDF
Thomson-CSF amplifier Abstract: TACAN transistor THOMSON-CSF iff Text: S G S -T H O M S O N _ 04C D \| 7 ^ 2 3 7 Q 0G Q 134 b \| ? T~ SOLID STATE MICROWAVE SD1526 THOMSON-CSF COMPONENTS CORPORATION r Montgomeryville, PA 18936 • 215 362-8500 *T W X 510-661-7299 MICROWAVE POWER TRANSISTOR IFF, DME, TACAN NPN power transistor.	OCR Scan	SD1526 SD1526 IFF/28 DMW/28 TACAN/28 Thomson-CSF amplifier TACAN transistor THOMSON-CSF iff	PDF
Philips electrolytic 106 screw Abstract: STR aluminium electrolytic capacitor Text: DISCRETE SEMICONDUCTORS RX1214B350Y NPN microwave power transistor Product specification Superseded data of November 1994 Philips Semiconductors 1997 Feb 18 PHILIPS PHILIPS Philips Semiconductors Product specification NPN microwave power transistor RX1214B350Y	OCR Scan	RX1214B350Y RX1214B350Y SCA53 127147/00/02/pp12 Philips electrolytic 106 screw STR aluminium electrolytic capacitor	PDF
2N5016 Abstract: transistor 2n5016 att1100 multi-emitter transistor Text: s G S—THOMSON Q4C D \| 7=12^37 Q0GQ120 b ”J ~ *f ° SOLID STATE MICROWAVE 2N5016 THOMSON-CSF COMPONENTS CORPORATION Montgomeryviìie, P A 18936 • 215 855-8400 » TWX 510-661-7299 1 . VHF-UHF SILICON NPN POWER TRANSISTOR DESCRIPTION: The SSS 2N5016 is a silicon epitaxial NPN planar transistor which	OCR Scan	Q0GQ120 2N5016 2N5016 700mHz. transistor 2n5016 att1100 multi-emitter transistor	PDF
Untitled Abstract: No abstract text available Text: 7294621 m POWEREX u a m INC “ DEI 7514^51 DD0SD3b x Powerex, Inc., Hlllls Street, ibungwood, Pennsylvania 15697 412 925-7272 fl D "T ^ S ^ Z y KT234520 Split-Dual Bipolar Transistor Module 200 Amperes/600 Volts Description o u t liv e m m ìn g Powerex Split-Dual Bipolar Transistor	OCR Scan	KT234520 Amperes/600	PDF
Thomson-CSF 15 Abstract: SILICON POWER CUBE Text: T~3l~ 3 OMC D I 7=152537 □□00037 fl B p S-THOMSON SOLID STATE MICROWAVE SD1169 ; THOMSON-CSF COMPONENTS CORPORATION . Montgomery ville,P A 18936• (215 362-8500■ T W X 510-661-7299 66-88 MHz COMMUNICATIONS TRANSISTOR DESCRIPTION The SD1169 is an NPN Silicon Expitaxial Planar Transistor designed	OCR Scan	SD1169 SD1169 10/IF Thomson-CSF 15 SILICON POWER CUBE	PDF

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TRANSISTOR 729 Search Results

TRANSISTOR 729 Result Highlights (5)

TRANSISTOR 729 Datasheets Context Search

sot467b

CA3083

sot467bpo

MX0912B351Y

MX0912B251Y

la 4440 amplifier circuit diagram 300 watt

SD1007

412 u1A

2sb504

kd721K

Untitled

K723

diode t25 4 c6

transistor k 4213 m

TACAN transistor

2n6080

Untitled

SD1451

118-136 mhz

Thomson-CSF amplifier

Philips electrolytic 106 screw

2N5016

Untitled

Thomson-CSF 15