NEC 2905
Abstract: NEC 1357 2SC4228 2SC4228-T1 2SC4228-T2 transistor 936 sc 789 transistor 1357 transistor NEC
Text: DATA SHEET SILICON TRANSISTOR 2SC4228 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLD DESCRIPTION PACKAGE DIMENSIONS The 2SC4228 is a low supply voltage transistor designed for VHF, in millimeters UHF low noise amplifier.
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2SC4228
2SC4228
NEC 2905
NEC 1357
2SC4228-T1
2SC4228-T2
transistor 936
sc 789 transistor
1357 transistor NEC
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Untitled
Abstract: No abstract text available
Text: SILICON TRANSISTOR NE58219 / 2SC5004 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION PACKAGE DIMENSIONS The NE58219 / 2SC5004 is a low supply voltage transistor in millimeters designed for UHF OSC/MIX. It is suitable for a high density surface mount assembly since the
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NE58219
2SC5004
2SC5004
NE58219-A
2SC5004-A
NE58219-T1-A
2SC5004-T1-A
perfor516
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NEC JAPAN 237 521 02
Abstract: transistor zo 607 2SC5004
Text: DATA SHEET SILICON TRANSISTOR 2SC5004 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION The 2SC5004 is a low supply voltage transistor designed for UHF PACKAGE DIMENSIONS in millimeters OSC/MIX. It is suitable for a high density surface mount assembly since the
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2SC5004
2SC5004
NEC JAPAN 237 521 02
transistor zo 607
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NEC JAPAN 282 110 01
Abstract: NEC 2561 TYP 513 309 2SC4570 2SC4570-T1 2SC4570-T2 date sheet ic 7483 marking 929 922 nec 5261
Text: DATA SHEET SHEET DATA SILICON TRANSISTOR 2SC4570 NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLD DESCRIPTION PACKAGE DIMENSIONS Units: mm The 2SC4570 is a low supply voltage transistor designed for UHF OSC/MIX. 2.1±0.1 It is suitable for a high density surface mount assembly since the
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2SC4570
2SC4570
SC-70)
2SC4570-T1
NEC JAPAN 282 110 01
NEC 2561
TYP 513 309
2SC4570-T1
2SC4570-T2
date sheet ic 7483
marking 929 922
nec 5261
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transistor zo 607
Abstract: zo 607 MA 2SC5004 2SC5004-T1 NE58219 NE58219-T1 nec 237 521 02 NE582
Text: DATA SHEET SILICON TRANSISTOR NE58219 / 2SC5004 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION PACKAGE DIMENSIONS The NE58219 / 2SC5004 is a low supply voltage transistor in millimeters designed for UHF OSC/MIX. It is suitable for a high density surface mount assembly since the
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NE58219
2SC5004
2SC5004
NE58219
NE58219-T1
2SC5004-T1
transistor zo 607
zo 607 MA
2SC5004-T1
NE58219-T1
nec 237 521 02
NE582
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TD2400
Abstract: transistor zo 607 2SC5007 2SC5007-T1 NEC 1555 AK-804 164-1-1
Text: DATA SHEET SILICON TRANSISTOR 2SC5007 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION The 2SC5007 is an NPN epitaxial silicon transistor designed for use in low noise and small signal amplifiers from VHF band to UHF band. Low noise figure, high gain, and high current capability achieve a very wide dynamic range
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2SC5007
2SC5007
TD2400
transistor zo 607
2SC5007-T1
NEC 1555
AK-804 164-1-1
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MSB92WT1
Abstract: SMD310
Text: MOTOROLA Order this document by MSB92WT1/D SEMICONDUCTOR TECHNICAL DATA MSB92WT1 Preliminary Information PNP Silicon General Purpose High Voltage Transistor Motorola Preferred Devices This PNP Silicon Planar Transistor is designed for general purpose amplifier
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MSB92WT1/D
MSB92WT1
SC-70/SOT-323
7-inch/3000
MSB92WT1
SMD310
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MSB92WT1
Abstract: SMD310 h2d transistor
Text: MOTOROLA Order this document by MSB92WT1/D SEMICONDUCTOR TECHNICAL DATA MSB92WT1 Preliminary Information PNP Silicon General Purpose High Voltage Transistor Motorola Preferred Devices This PNP Silicon Planar Transistor is designed for general purpose amplifier
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MSB92WT1/D
MSB92WT1
SC-70/SOT-323
7-inch/3000
MSB92WT1
SMD310
h2d transistor
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MSD42WT1
Abstract: SMD310
Text: MOTOROLA Order this document by MSD42WT1/D SEMICONDUCTOR TECHNICAL DATA MSD42WT1 Preliminary Information NPN Silicon General Purpose High Voltage Transistor Motorola Preferred Devices This NPN Silicon Planar Transistor is designed for general purpose amplifier
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MSD42WT1/D
MSD42WT1
SC-70/SOT-323
7-inch/3000
MSD42WT1
SMD310
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la 4440 amplifier circuit diagram 300 watt
Abstract: la 4440 amplifier circuit diagram 300 watt diode LT 7229 2sd323 YM 7137 3D DA 3807 pdf transistor inverter welder 4 schematic 2N5630 THYRISTOR br 403 1N3492
Text: Alphanumeric Index Power Transistor Selector Guide Power Transistor Cross Reference Power Transistor Data Sheets Thyristor Selector Guide Thyristor Cross Reference Thyristor Data Sheets Leadforms, Hardware, and Mounting Techniques R ectifier and Zener Diode
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AN-784A
la 4440 amplifier circuit diagram 300 watt
la 4440 amplifier circuit diagram 300 watt
diode LT 7229
2sd323
YM 7137 3D
DA 3807 pdf transistor
inverter welder 4 schematic
2N5630
THYRISTOR br 403
1N3492
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transistor NEC D 822 P
Abstract: NEC D 986 transistor NEC B 617 2SC4228 transistor NEC D 587 r44 marking transistor D 2624
Text: DATA SHEET NEC SILICON TRANSISTOR 2SC4228 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLD DESCRIPTION The 2SC4228 is a low supply voltage transistor designed for VHF, PACKAGE DIMENSIONS in millimeters UHF low noise amplifier.
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2SC4228
2SC4228
transistor NEC D 822 P
NEC D 986
transistor NEC B 617
transistor NEC D 587
r44 marking
transistor D 2624
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transistor NEC D 822 P
Abstract: No abstract text available
Text: DATA SHEET NEC SILICON TRANSISTOR 2SC4228 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLD DESCRIPTION The 2SC4228 is a low supply voltage transistor designed for VHF, PACKAGE DIMENSIONS in millimeters UHF low noise amplifier.
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2SC4228
2SC4228
transistor NEC D 822 P
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q001
Abstract: DDDD234 1BW TRANSISTOR FF200 TRANSISTOR BL 123 bdu 9 j
Text: 7 -3 < h 3 l FF 200 R 06 KL SSE EUPEC Transistor D • aMDaST? Thermische Eigenschaften Transistor RthJC Elektrische Eigenschaften Electrical properties Höchstzulässiae W erte Maximum rated values 600 V 200 A RthCK V ces le DDDD234 774 «UPEC Thermal properties
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DDDD234
34D32CI7
q001
1BW TRANSISTOR
FF200
TRANSISTOR BL 123
bdu 9 j
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Untitled
Abstract: No abstract text available
Text: DATA SHEET SILICON TRANSISTOR 2SC4570 NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLD DESCRIPTION The 2SC4570 is a low supply voltage transistor designed for UHF PACKAGE DIMENSIONS Units: mm OSC/MIX. 2.1 ±0.1 It is suitable for a high density surface mount assembly since the
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2SC4570
2SC4570
SC-70)
4570-T
PACK878
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NEC 1357
Abstract: LA 8873 TRANSISTOR C 4460
Text: DATA SHEET SILICON TRANSISTOR 2SC5004 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION The 2SC5004 is a low supply voltage transistor designed for UHF PACKAGE DIMENSIONS in m illim e te rs OSC/MIX. It is suitable for a high density surface mount assem bly since the
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2SC5004
2SC5004
NEC 1357
LA 8873
TRANSISTOR C 4460
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BLW77
Abstract: neutralization push-pull philips Trimmer 60 pf
Text: PHILIPS bSE » INTERNATIONAL • 7110öSb D0b3277 SSO IPHIN BLW77 H.F./V.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor intended for use in class-AB or class-B operated high power transmitters in the h.f. and v.h.f. bands. The transistor presents excellent performance as a linear am
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D0b3277
BLW77
7110flSh
7Z77473
7Z77475
BLW77
neutralization push-pull
philips Trimmer 60 pf
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D 1437 transistor
Abstract: No abstract text available
Text: DATA SHEET SILICON TRANSISTOR 2SC5004 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION The 2 S C 5004 is a low supply voltage transistor designed for UHF PACKAGE DIMENSIONS in m illim e te rs OSC/M IX. It is suitable for a high density surface mount assembly since the
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2SC5004
D 1437 transistor
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Untitled
Abstract: No abstract text available
Text: N AMER PHILIPS/DISCRETE b'lE D b b S B ' m DDETBflD DM2 * A P X BLW77 J V . H.F./V.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor intended for use in class-AB or class-B operated high power transmitters in the h.f. and v.h.f. bands. The transistor presents excellent performance as a linear am
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BLW77
28The
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transistor NEC B 617
Abstract: nec. 5.5 473
Text: DATA SHEET NEC SILICON TRANSISTOR 2SC5007 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION The 2SC5007 is an NPN epitaxial silicon transistor designed for use in low noise and small signal am plifiers from VHF band to UHF band. Low noise figure, high gain, and high current capability achieve a very w ide dynam ic range
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2SC5007
2SC5007
transistor NEC B 617
nec. 5.5 473
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W1p TRANSISTOR
Abstract: transistor w1P w1p npn SOT23 W1P W1P 59 transistor w1p 60 W1P 51 W1p 69 W1P 66 transistor W1P 50
Text: Philips Sem iconductors 1^53131 0025366 774 M A P X AMER P H I L I P S / D I S C R E T E Product specification b?E PNP 5 GHz wideband transistor DESCRIPTION ^ BFT92 PINNING PNP transistor in a plastic SOT23 envelope. PIN It is primarily Intended for use in RF
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BFT92
BFR92
BFR92A.
W1p TRANSISTOR
transistor w1P
w1p npn
SOT23 W1P
W1P 59 transistor
w1p 60
W1P 51
W1p 69
W1P 66 transistor
W1P 50
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431202036640 choke
Abstract: CEF 83 A 3 BLW85 ZL18 blw85 transistor test circuit
Text: PHILIPS INTERN A T I O N A L L.5E D 711Dfi2ti 00b33>4b Ô3Û • PHIN ■ I BLW85 _ A _ H.F./V.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor intended for use in class-A, B and C operated mobile h.f. and v.h.f. transmitters with a nominal supply voltage of 12,5 V . The transistor is resistance stabilized and
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BLW85
QQb3357
431202036640 choke
CEF 83 A 3
BLW85
ZL18
blw85 transistor test circuit
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buk552
Abstract: No abstract text available
Text: Philips Semiconductors Product Specification PowerMOS transistor BUK552-100A/B Logic level FET_ GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope. The device is intended for use in
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BUK552-100A/B
BUK552
-100A
-100B
BUK552-1OOA/B
buk552
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Untitled
Abstract: No abstract text available
Text: N AMER PHILIPS/DISCRETE 860 ObE » • bbS3^31 0013^22 1 D 01684 BLX13 V H.F./V.H.F. POWER TRANSISTOR N-P-N epitaxial planar transistor intended fo r s.s.b. in class-A and AB and in f.m . transm itting appli cations in class-C w ith a supply voltage up to 28 V, The transistor is resistance stabilized and tested
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BLX13
147nH
118nH
bbS3T31
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TRIMMER cap no-2222 809 07015
Abstract: BD433 BLW77
Text: N AMER PHILIPS/DISCRETE b^E t> m t b s a ' m odetbôd ghs IAPX BLW77 H.F./V.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor intended for use in class-AB orclass-B operated high power transmitters in the h .f. and v .h .f. bands. The transistor presents excellent performance as a linear am
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BLW77
TRIMMER cap no-2222 809 07015
BD433
BLW77
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