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    TRANSISTOR 7N6 Search Results

    TRANSISTOR 7N6 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR 7N6 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    7n6 TRANSISTOR

    Abstract: Marking 7n6 TRANSISTOR transistor 7n6 07n60 Marking 7n6 Mosfet 7n6 diode H07N60 H07N60E H07N60F marking code PB
    Text: HI-SINCERITY Spec. No. : MOS200604 Issued Date : 2006.02.01 Revised Date : 2006.02.07 Page No. : 1/5 MICROELECTRONICS CORP. H07N60 Series H07N60 Series Pin Assignment Tab N-Channel Power Field Effect Transistor 3-Lead Plastic TO-220AB Package Code: E Pin 1: Gate


    Original     		PDF MOS200604 H07N60 O-220AB 183oC 217oC 260oC 10sec H07N60E, 7n6 TRANSISTOR Marking 7n6 TRANSISTOR transistor 7n6 07n60 Marking 7n6 Mosfet 7n6 diode H07N60E H07N60F marking code PB

    CHINA TV FBT

    Abstract: transistor 2N3906 smd 2A SOT23 TS4B05G transistor 2N3904 smd 2A SOT23 fbt tv KIA7812API KIA431A transistor transistor KIA431A CHINA TV uoc 2N60 MOSFET SMPS
    Text: LG LCD TV AUTOBAHN BOARD Part List First & Best KEC Products For CRT TV http://www.keccorp.com Sales Engineering G Contact to: [email protected] Tel: +82-2-2025-5260 (H.P: +82-19-693-2580 ) 2005. 11. SALES ENGINEERING GROUP REV 3.3 1 KEC Products for CRT TV


    Original     		PDF O-92M KRC102M KRC112M O-92L KTN2369, KTC3194 KTC3197, KTC3198 KTC945B KIA431 CHINA TV FBT transistor 2N3906 smd 2A SOT23 TS4B05G transistor 2N3904 smd 2A SOT23 fbt tv KIA7812API KIA431A transistor transistor KIA431A CHINA TV uoc 2N60 MOSFET SMPS

    500W TRANSISTOR AUDIO AMPLIFIER

    Abstract: IN5822 diode irfs6408 220V ac to 9V dc converter circuit DC 48v AC 220v 500w smps P-Channel MOSFET 800v SB550 transistor drive motor 10A with transistor P channel MOSFET P channel 600v 20a IGBT list of n channel power mosfet
    Text: Power for Computing Analog Discrete Interface & Logic Power Solutions for • Conversion · Distribution · Management · Minimization There’s a lot more to power than power management. Optimizing system power in computing applications requires innovative products for power conversion, distribution,


    Original     		PDF Power247TM, 500W TRANSISTOR AUDIO AMPLIFIER IN5822 diode irfs6408 220V ac to 9V dc converter circuit DC 48v AC 220v 500w smps P-Channel MOSFET 800v SB550 transistor drive motor 10A with transistor P channel MOSFET P channel 600v 20a IGBT list of n channel power mosfet

    transistor 7n60

    Abstract: No abstract text available
    Text: CPEC 成都瑞芯电子有限公司 CHENGDU PROMISING CHIP ELECTRONICS CO., LTD RX7N60 600V N 沟道功率 MOSFET 产品简介 地址；成都高新区世纪城南路 216 号天府软件园 D 区 6 号楼 14 层 Tel：086-28-85198496 85198428 Fax：086-28-8519893


    Original     		PDF RX7N60 Tel086-28-85198496 Fax086-28-8519893 RX7N60] RX7N60, O-220AB, 00A/us, transistor 7n60

    transformer ei28

    Abstract: CT 5D-9 XL1225 transistor capacitor 100uf 25v AP4310 diode 5d9 resistor 10k xl1225 5d9 capacitor fuse 2a 250v
    Text: BCD Semi Ltd Co. AP384xG Demo Board Manual Content: 1. Description 2. Specifications 3. Schematics of the PCB 4. PCB Layout 5. Photo View of the Demo Board 6. PCB Dimensions 7. BOM 8. Test Result I. PROPRIETARY & CONFIDENTIAL ADVANCED ANALOG CIRCUITS CORPORATION


    Original     		PDF AP384xG 5V-265V AP3843G transformer ei28 CT 5D-9 XL1225 transistor capacitor 100uf 25v AP4310 diode 5d9 resistor 10k xl1225 5d9 capacitor fuse 2a 250v

    Automobile Black Box

    Abstract: Power Bank Freescale ACT2801 ACT2802 ACT8945A Atmel ACT8865 power management units high power
    Text: 3Q 2014 Contents 1. High Power DC-DC Converter Products ………………….………………………….………….………….….…. 3 1.1 DC-DC Product Selection Guide …….………………………………………………………………………….……. 4


    Original     		PDF ACT2801 ACT2801C ACT2802 ACT2802B Automobile Black Box Power Bank Freescale ACT8945A Atmel ACT8865 power management units high power

    230V ac to 5V dc usb charger circuit

    Abstract: SAMA5 RK3026 s3c2416 charger pad wide
    Text: Contents 1. High Power DC-DC Converter Products ………………….………………………….………….………….….…. 3 1.1 DC-DC Product Selection Guide …….………………………………………………………………………….……. 4


    Original     		PDF ACT2801 ACT2801C ACT2802 ACT2802C 230V ac to 5V dc usb charger circuit SAMA5 RK3026 s3c2416 charger pad wide

    7N60a4

    Abstract: HGTG7N60A4 equivalent HGTP7N60A4 HGT1S7N60A4S HGTD7N60A4S HGTD7N60A4S9A HGTG7N60A4 TA49331
    Text: HGTD7N60A4S, HGT1S7N60A4S, HGTG7N60A4, HGTP7N60A4 Data Sheet December 2001 600V, SMPS Series N-Channel IGBT Features The HGTD7N60A4S, HGT1S7N60A4S, HGTG7N60A4 and HGTP7N60A4 are MOS gated high voltage switching devices combining the best features of MOSFETs and


    Original     		PDF HGTD7N60A4S, HGT1S7N60A4S, HGTG7N60A4, HGTP7N60A4 HGTG7N60A4 HGTP7N60A4 150oC. 100kHz 7N60a4 HGTG7N60A4 equivalent HGT1S7N60A4S HGTD7N60A4S HGTD7N60A4S9A TA49331

    RK3026

    Abstract: SAMA5 10w led diode charger pad wide REGULATOR sw 13003 10kk thermistor SC053
    Text: Contents 1. High Power DC-DC Converter Products ………………….………………………….………….…………………. 3 1.1 DC-DC Product Selection Guide …….………………………………………………………………………………. 4


    Original     		PDF ACT2801 ACT2802 ACT4501 ACT4523 RK3026 SAMA5 10w led diode charger pad wide REGULATOR sw 13003 10kk thermistor SC053

    Untitled

    Abstract: No abstract text available
    Text: HGTD7N60A4S, HGTG7N60A4, HGTP7N60A4 TM Data Sheet March 2000 File Number 600V, SMPS Series N-Channel IGBT Features The HGTD7N60A4S, HGTG7N60A4 and HGTP7N60A4 are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These


    Original     		PDF HGTD7N60A4S, HGTG7N60A4, HGTP7N60A4 HGTG7N60A4 HGTP7N60A4 150oC. TA49331.

    7n60a4

    Abstract: HGT1S7N60A4S9A HGTG7N60A4 HGTP7N60A4 LD26 TA49331
    Text: HGT1S7N60A4S9A, HGTG7N60A4 HGTP7N60A4 Data Sheet August 2003 600V, SMPS Series N-Channel IGBT Features The HGT1S7N60A4S9A, HGTG7N60A4 and HGTP7N60A4 are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These


    Original     		PDF HGT1S7N60A4S9A, HGTG7N60A4 HGTP7N60A4 HGTG7N60A4 150oC. 100kHz 200kHz 125oC 7n60a4 HGT1S7N60A4S9A HGTP7N60A4 LD26 TA49331

    7n60a4d

    Abstract: TA49370 TA49331 HGT1S7N60A4DS HGT1S7N60A4DS9A HGTG7N60A4D HGTP7N60A4D
    Text: HGTG7N60A4D, HGTP7N60A4D, HGT1S7N60A4DS TM Data Sheet March 2000 600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The HGTG7N60A4D, HGTP7N60A4D and HGT1S7N60A4DS are MOS gated high voltage switching devices combining the best features of MOSFETs and


    Original     		PDF HGTG7N60A4D, HGTP7N60A4D, HGT1S7N60A4DS HGTP7N60A4D HGT1S7N60A4DS 150oC. TA49331. TA49370. 7n60a4d TA49370 TA49331 HGT1S7N60A4DS9A HGTG7N60A4D

    7N60A4D

    Abstract: TA49333 TA49331 TA49370 EC 801 HGT1S7N60A4DS HGT1S7N60A4DS9A HGTG7N60A4D HGTP7N60A4D
    Text: HGTG7N60A4D, HGTP7N60A4D, HGT1S7N60A4DS Data Sheet March 2000 600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The HGTG7N60A4D, HGTP7N60A4D and HGT1S7N60A4DS are MOS gated high voltage switching devices combining the best features of MOSFETs and


    Original     		PDF HGTG7N60A4D, HGTP7N60A4D, HGT1S7N60A4DS HGTP7N60A4D HGT1S7N60A4DS 150oC. TA49331. TA49370. 7N60A4D TA49333 TA49331 TA49370 EC 801 HGT1S7N60A4DS9A HGTG7N60A4D

    7N60A4D

    Abstract: TA49370 HGT1S7N60A4DS HGT1S7N60A4DS9A HGTG7N60A4D HGTP7N60A4D TA49331 7N60A
    Text: HGTG7N60A4D, HGTP7N60A4D, HGT1S7N60A4DS Data Sheet December 2001 600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The HGTG7N60A4D, HGTP7N60A4D and HGT1S7N60A4DS are MOS gated high voltage switching devices combining the best features of MOSFETs and


    Original     		PDF HGTG7N60A4D, HGTP7N60A4D, HGT1S7N60A4DS HGTP7N60A4D HGT1S7N60A4DS 150oC. TA49331. TA49370. 7N60A4D TA49370 HGT1S7N60A4DS9A HGTG7N60A4D TA49331 7N60A

    7N60A4

    Abstract: HGTG7N60A4 HGTP7N60A4 TA49331 HGT1S7N60A4S HGTD7N60A4S HGTD7N60A4S9A
    Text: HGTD7N60A4S, HGT1S7N60A4S, HGTG7N60A4, HGTP7N60A4 Data Sheet June 2000 File Number 600V, SMPS Series N-Channel IGBT Features The HGTD7N60A4S, HGT1S7N60A4S, HGTG7N60A4 and HGTP7N60A4 are MOS gated high voltage switching devices combining the best features of MOSFETs and


    Original     		PDF HGTD7N60A4S, HGT1S7N60A4S, HGTG7N60A4, HGTP7N60A4 HGTG7N60A4 HGTP7N60A4 150oC. 100kHz 7N60A4 TA49331 HGT1S7N60A4S HGTD7N60A4S HGTD7N60A4S9A

    65e9 transistor

    Abstract: transistor 75307D Transistor 65e8 SD MOSFET DRIVE DATASHEET 4468 8 PIN G40N60 RHR15120 equivalent 10n120bnd 76107d transistor 76121D emerson three phase dc motor driver service note
    Text: DUAL DIE POWER MOSFETs TM 1 1-888-INTERSIL or 321-724-7143 | | ID AMPS rDS ON VGE = 10V OHMS rDS(ON) VGE = 5V OHMS rDS(ON) VGE = 2.5V OHMS TYPE MS-012AA (SO-8) MO-153AA (TSSOP-8) 12 3.50 - 0.050 - Dual N RF1K49090 - 12 3.50 - 0.130 - Dual P RF1K49093 - 12


    Original     		PDF 1-888-INTERSIL MS-012AA MO-153AA RF1K49090 RF1K49093 RF1K49092 ITF87056DQT ITF87072DK8T ITF87008DQT RF1K49223 65e9 transistor transistor 75307D Transistor 65e8 SD MOSFET DRIVE DATASHEET 4468 8 PIN G40N60 RHR15120 equivalent 10n120bnd 76107d transistor 76121D emerson three phase dc motor driver service note

    7N60B equivalent

    Abstract: 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2
    Text: Contents Page General Contents QA and Environmental Management Systems Alphanumeric Index Symbols and Terms Nomenclature Patents and Intellectual Property I II III XVIII XX XXII CLARE Optically Isolated Solid State Relays Optically Isolated AC-Power Switches


    Original     		PDF MS-013 10-Pin 5M-1994 MO-229 7N60B equivalent 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2

    sx3704

    Abstract: AP239 Transistor 80139 8C547 6C131C IN2222A 2N50B 2N2064 radio AC176 AC126 sft353
    Text: INTERNATIONAL TRANSISTOR EQUIVALENTS GUIDE A LSO BY THE S A M E AUTHOR BP108 International Diode Equivalents Guide BP140 Digital IC Equivalents and Pin Connections BP141 Linear IC Equivalents and Pin Connections ALSO OF INTEREST BP234 Transistor Selector Guide


    OCR Scan     		PDF

    7N60C3

    Abstract: 7N60C3D S7N60 g7N60C3D Zener Diode LT 432 diode lt 823 S7N60C3D 600VU NT 407 F power transistor
    Text: H G TP 7N60C3D, HGT1S 7N60C3D, HGT1S7N60C3DS H A R R IS S E M I C O N D U C T O R 1 4 A, 60 0V, U F S S e r i e s N - C h a n n e l I G B T January 1997 wi th An ti - P a r a i I el H y p e r f a s t D i o d e s Features Packaging JEDEC TO-22QAB • 1 4A, 6 0 0 V at T c = 2 5 ° C


    OCR Scan     		PDF 7N60C3D, HGT1S7N60C3DS O-22QAB O-262AA HGTP7N60C3D, HGT1S7N60C3D HGT1S7N60C3DS -800-4-H 7N60C3 7N60C3D S7N60 g7N60C3D Zener Diode LT 432 diode lt 823 S7N60C3D 600VU NT 407 F power transistor

    1N5160

    Abstract: MAX 6438 GEO SEMICONDUCTORS 2N6058 transistor bf 175 2N3902 2N5696 1N5788 Germanium itt
    Text: DEVICE INDEX Devices characterized in Volume II show the page reference only. Devices characterized in Volume I are referenced by volume and page number. DEVICE 1N5000 1N5001 1N5002 1N5003 1 N 5 1 3 9 .A 1 N 5 1 4 0 .A 1 N 5 1 4 1 .A 1 N 5 1 4 2 .A 1 N 5 1 4 3 .A


    OCR Scan     		PDF 1N5000 1N5001 1N5002 1N5003 1N5149 1N5150 1N5153 1N5155 1N5158 1N5159 1N5160 MAX 6438 GEO SEMICONDUCTORS 2N6058 transistor bf 175 2N3902 2N5696 1N5788 Germanium itt

    7N60a4

    Abstract: LG 631 IC TA49331 LG 631 HGTD7N60A4S HGTD7N60A4S9A HGTG7N60A4 HGTP7N60A4 LD26 transistor st make 803
    Text: HGTD7N60A4S, HGTG7N60A4, HGTP7N60A4 in t e r r ii J a n u a ry . m D ata S h eet File N u m b er i 4826 Features 600V, SMPS Series N-Channel IGBT The HGTD7N60A4S, HGTG7N60A4 and HGTP7N60A4 are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These


    OCR Scan     		PDF HGTD7N60A4S, HGTG7N60A4, HGTP7N60A4 HGTG7N60A4 HGTP7N60A4 TA49331. 7N60a4 LG 631 IC TA49331 LG 631 HGTD7N60A4S HGTD7N60A4S9A LD26 transistor st make 803

    7n60a4d

    Abstract: TA49331 HGTG*N60A4D TA49333 HGTG7N60A4D TA49370 7N60a4 HGT1S7N60A4DS HGT1S7N60A4DS9A HGTP7N60A4D
    Text: HGTG7N60A4D, HGTP7N60A4D, HGT1S7N60A4DS interrii J a n u a ry . m D ata S h eet 600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The HGTG7N60A4D, HGTP7N60A4D and HGT1S7N60A4DS are MOS gated high voltage switching devices combining the best features of MOSFETs and


    OCR Scan     		PDF HGTG7N60A4D, HGTP7N60A4D, HGT1S7N60A4DS HGTP7N60A4D HGT1S7N60A4DS TA49331. TA49370. 7n60a4d TA49331 HGTG*N60A4D TA49333 HGTG7N60A4D TA49370 7N60a4 HGT1S7N60A4DS9A

    Untitled

    Abstract: No abstract text available
    Text: HAFRFRIS S E M I C O N D U C T O R HGTD7N60C3, HGTD7N60C3S, HGTP7N60C3 14A, 600V, UFS Series N-Channel IGBTs January 1997 Packaging Features j e d e c t o - 22oab • 14A, 600V at Tc = 25°C • 600V Switching SOA Capability • Typical Fall T i m e . 140ns at T j = 150°C


    OCR Scan     		PDF HGTD7N60C3, HGTD7N60C3S, HGTP7N60C3 22oab 140ns HGTD7N60C3S HGTP7N60C3

    SN76477

    Abstract: TNY 176 PN EQUIVALENT 2n4401 free transistor equivalent book tis43 XR2206 application notes Semiconductor Data Handbook mj802 2N3866 s2p bc149c TIP35C TIP36C sub amplifier circuit diagram LM131
    Text: From the Publishers of ETI & HE HEM M iNqs E U c t r o n ic s L rd Electronic C om ponents Et M icrocom puters 16 BRAND STREET, HITCHIN, HERTS, SG5 1JE Telephone: 0462 33031 memories 2114L 2708 2716 2532 2732 4116 4164 6116P3 6116LP3 •Op 220p 210p 380p


    OCR Scan     		PDF 2114L 6116P3 6116LP3 AY-3-1270 AY-3-1350 AY-3-8910 AY-3-8912 AY-5-1230 CA3080E CA3130E SN76477 TNY 176 PN EQUIVALENT 2n4401 free transistor equivalent book tis43 XR2206 application notes Semiconductor Data Handbook mj802 2N3866 s2p bc149c TIP35C TIP36C sub amplifier circuit diagram LM131