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    TRANSISTOR 8550SS Search Results

    TRANSISTOR 8550SS Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR 8550SS Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    8550SST

    Abstract: 8550SS k 1 transistor
    Text: 8550SST -1.5A , -40V PNP Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free TO-92 FEATURES  General Purpose Switching and Amplification. G H Emitter Collector Base


    Original     		PDF 8550SST 8550SST-B 8550SST-C 8550SST-D -100mA -800mA -800mA, -80mA 8550SST 8550SS k 1 transistor

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors TO – 92 8550SS TRANSISTOR PNP 1.EMITTER FEATURES z General Purpose Switching and Amplification. 2.COLLECTOR 3.BASE MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)


    Original     		PDF 8550SS -100mA -800mA -800mA -80mA -50mA 30MHz

    8550SS

    Abstract: transistor 8550ss
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors 8550SS TRANSISTOR（ PNP ） TO—92 FEATURES Power dissipation PCM : 1W （Tamb=25℃） 1.EMITTER Collector current ICM: -1.5 A Collector-base voltage 2. COLLECTOR 3. BASE


    Original     		PDF 8550SS O--92 270TYP 050TYP 8550SS transistor 8550ss

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors 8550SS TRANSISTOR PNP TO-92 FEATURES Power dissipation PCM: 1 W (Tamb=25℃) 1. EMITTER Collector current ICM: -1.5 A - 40 V 2. COLLECTOR Collector-base voltage V(BR)CBO:


    Original     		PDF 8550SS -800mA, -50mA

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 8550SS Plastic-Encapsulate Transistors TRANSISTOR PNP TO-92 FEATURES 1. EMITTER Power dissipation PCM : 1 W 2. COLLECTOR (TA=25℃) 3. BASE 1 2 3 MAXIMUM RATINGS* TA=25℃ unless otherwise noted Symbol


    Original     		PDF 8550SS -100mA -800mA -800mA, -80mA -10mA -50mA -30MHZ

    Untitled

    Abstract: No abstract text available
    Text: TO-92 8550SS Plastic-Encapsulate Transistors TRANSISTOR PNP TO-92 FEATURES 1. EMITTER Power dissipation PCM : 1 W 2. COLLECTOR (TA=25℃) 3. BASE 1 2 3 MAXIMUM RATINGS* TA=25℃ unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage


    Original     		PDF 8550SS -100mA -800mA -800mA, -80mA -10mA -50mA -30MHZ

    transistor+8550ss

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 8550SS Plastic-Encapsulate Transistors TRANSISTOR PNP TO-92 FEATURES 1. EMITTER 2. BASE Power dissipation PCM : 1 W (TA=25℃) : 2 W (TC=25℃) 3. COLLECTOR 1 2 3 MAXIMUM RATINGS* TA=25℃ unless otherwise noted


    Original     		PDF 8550SS -100mA -800mA -800mA, -80mA -10mA -50mA -30MHZ transistor+8550ss

    8550SS

    Abstract: transistor 8550ss IC800 ic 800 IB-80
    Text: 8550SS 8550SS TRANSISTOR PNP TO-92 FEATURES Power dissipation PCM: 1 W (Tamb=25℃) 1. EMITTER Collector current ICM: -1.5 A - 40 V 2. COLLECTOR Collector-base voltage V(BR)CBO: 3. BASE Operating and storage junction temperature range 1 2 3 TJ, Tstg: -55℃ to +150℃


    Original     		PDF 8550SS -800mA, -50mA 8550SS transistor 8550ss IC800 ic 800 IB-80

    8550SS

    Abstract: transistor 8550ss 8550SSD 8550ss-d
    Text: MCC 8550SS-C 8550SS-D   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# TM Micro Commercial Components Features • • • • • • • TO-92 Plastic-Encapsulate Transistors Capable of 1.0Watts Tamb=25 OC of Power Dissipation.


    Original     		PDF 8550SS-C 8550SS-D -55OC 8550SS transistor 8550ss 8550SSD 8550ss-d

    8550SSD

    Abstract: 8550SS
    Text: MCC TM Micro Commercial Components 8550SS-C 8550SS-D   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features • • • • • • • TO-92 Plastic-Encapsulate Transistors Capable of 1.0Watts Tamb=25 OC of Power Dissipation.


    Original     		PDF 8550SS-C 8550SS-D -55OC 8550SS 100uAdc, 8550SSD

    Untitled

    Abstract: No abstract text available
    Text: MCC TM Micro Commercial Components 8550SS-C 8550SS-D   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features TO-92 Plastic-Encapsulate Transistors Capable of 1.0Watts Tamb=25 OC of Power Dissipation.


    Original     		PDF 8550SS-C 8550SS-D -55OC 8550SS

    8550ss

    Abstract: transistor 8550ss
    Text: MCC TM Micro Commercial Components 8550SS-C 8550SS-D   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features • • • • • • • TO-92 Plastic-Encapsulate Transistors Capable of 1.0Watts Tamb=25 OC of Power Dissipation.


    Original     		PDF 8550SS-C 8550SS-D -55OC 8550SS transistor 8550ss

    8550SS

    Abstract: No abstract text available
    Text: MCC TM Micro Commercial Components 8550SS-C 8550SS-D   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features • • • • • • • TO-92 Plastic-Encapsulate Transistors Capable of 1.0Watts Tamb=25 OC of Power Dissipation.


    Original     		PDF 8550SS-C 8550SS-D -55OC 8550SS 8550SS

    Y2 transistor

    Abstract: Transistor S8550 2TY bq d882 transistor bc547 bk 045 transistor D882 datasheet Z1 Transistor TRANSISTOR MARK AQY S8050 equivalent K596-B sot 89 D882
    Text: >>JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD. >>Tel: 86-510-6852812*12 >>Fax: 86-510-6858792 >>http://www.cj-elec.com >>http://www.globalsources.com/cjet.co >>Email:huaxing20@hotmail.com huaxing20@sohu.com >> Huaxing Lee DIODES IN SOD-123


    Original     		PDF huaxing20 OD-123 1N4148W 1N4448W 1N5711W* 1N6263W* B0520LW B0530W B0540W Y2 transistor Transistor S8550 2TY bq d882 transistor bc547 bk 045 transistor D882 datasheet Z1 Transistor TRANSISTOR MARK AQY S8050 equivalent K596-B sot 89 D882

    secos gmbh

    Abstract: c945 p 331 transistor npn SM2150AM SM1150AM c945 p 331 transistor SMBJ11CA 2sd2142 SM4005A SSG8 pzt649
    Text: Table of Contents Diodes Rectifier Schottky Rectifier 》Low VF Schottky Rectifier C1 - C5 Fast Rectifier D1 - D3 Low Loss Super Fast Bridge E1 - E3 F1 High Efficiency G1 - G4 Schottky H1 - H3 Switching I1- I3 PiN Diode J1 Bridge Rectifier 》 Fast Bridge Rectifiers


    Original     		PDF SGSR809-A SC-59 SGSR809-B SGSR809-C SGSR809-D SGSR809-E secos gmbh c945 p 331 transistor npn SM2150AM SM1150AM c945 p 331 transistor SMBJ11CA 2sd2142 SM4005A SSG8 pzt649

    secos gmbh

    Abstract: SMBJ11CA SM4005A SMBJ130CA SMBJ14CA SMBJ16CA SMBJ160CA BZV55C6V2 BZV55C12 SMBJ13CA
    Text: Table of Contents Diodes Rectifier Schottky Rectifier 》Low VF Schottky Rectifier Small Signal Bridge B1 - B2 General Rectifier C1 - C4 Fast Rectifier D1 - D3 》Super Fast Low Loss Super Fast E1 - E3 High Efficiency G1 - G3 Schottky H1 - H3 Switching I1- I3


    Original     		PDF SC-59 SGSR809-A SGSR809-B SGSR809-C SGSR809-D SGSR809-E secos gmbh SMBJ11CA SM4005A SMBJ130CA SMBJ14CA SMBJ16CA SMBJ160CA BZV55C6V2 BZV55C12 SMBJ13CA