Philips 4312 020
Abstract: BLV25 Philips 2222 ferrite fxc3b fxc3b PHILIPS 4312 blw 64 rf transistor PHILIPS 4312 amplifier philips rf choke ferrite 151 schematic for 88 to 108 amplifier
Text: APPLICATION NOTE Wideband 300 W push-pull FM amplifier using BLV25 transistors AN98031 Philips Semiconductors Wideband 300 W push-pull FM amplifier using BLV25 transistors CONTENTS 1 INTRODUCTION 2 AMPLIFIER DESIGN THEORY 2.1 2.2 2.3 The output network The input network
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BLV25
AN98031
BLV25
BLW86
SCA57
Philips 4312 020
Philips 2222
ferrite fxc3b
fxc3b
PHILIPS 4312
blw 64 rf transistor
PHILIPS 4312 amplifier
philips rf choke ferrite
151 schematic for 88 to 108 amplifier
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current fed push pull topology
Abstract: "CHAPTER 1 Introduction to Power Semiconductors" Power Semiconductor Applications Philips Semiconductors transistor Electronic ballast "INDUCTION LAMP" "Power Semiconductor Applications" Philips 40w ELECTRONIC choke BALLAST DIAGRAM 230v 40w fluorescent lamp inverter circuit circuit diagram electronic ballast for 40W tube l circuit diagram electronic choke for tube light CHAPTER 1 Introduction to Power Semiconductors
Text: Lighting Power Semiconductor Applications Philips Semiconductors CHAPTER 8 Lighting 8.1 Fluorescent Lamp Control 575 Lighting Power Semiconductor Applications Philips Semiconductors Fluorescent Lamp Control 577 Lighting Power Semiconductor Applications Philips Semiconductors
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50/60Hz
current fed push pull topology
"CHAPTER 1 Introduction to Power Semiconductors"
Power Semiconductor Applications Philips Semiconductors
transistor Electronic ballast "INDUCTION LAMP"
"Power Semiconductor Applications" Philips
40w ELECTRONIC choke BALLAST DIAGRAM
230v 40w fluorescent lamp inverter circuit
circuit diagram electronic ballast for 40W tube l
circuit diagram electronic choke for tube light
CHAPTER 1 Introduction to Power Semiconductors
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Power Semiconductor Applications Philips Semiconductors
Abstract: "Power Semiconductor Applications" Philips "CHAPTER 1 Introduction to Power Semiconductors" CHAPTER 1 Introduction to Power Semiconductors "static induction thyristor" varistor 503 static induction Thyristor TELEVISION EHT TRANSFORMERS 201 Static Induction Thyristor varistor 10c 471
Text: Thermal Management Power Semiconductor Applications Philips Semiconductors CHAPTER 7 Thermal Management 7.1 Thermal Considerations 553 Thermal Management Power Semiconductor Applications Philips Semiconductors Thermal Considerations 555 Thermal Management
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BUK7528-30
Abstract: PHP45N03T
Text: Philips Semiconductors Product specification TrenchMOS transistor Standard level FET GENERAL DESCRIPTION N-channel enhancement mode standard level field-effect power transistor in a plastic envelope using ’trench’ technology. The device features very low on-state resistance
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O220AB
PHP45N03T
BUK7528-30
PHP45N03T
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BUK7528-30
Abstract: PHP42N03T
Text: Philips Semiconductors Product specification TrenchMOS transistor Standard level FET GENERAL DESCRIPTION N-channel enhancement mode standard level field-effect power transistor in a plastic envelope using ’trench’ technology. The device features very low on-state resistance
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O220AB
PHP42N03T
BUK7528-30
PHP42N03T
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BUK7528-30
Abstract: PHB42N03T
Text: Philips Semiconductors Product specification TrenchMOS transistor Standard level FET GENERAL DESCRIPTION N-channel enhancement mode standard level field-effect power transistor in a plastic envelope suitable for surface mounting using ’trench’ technology. The device
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OT404
PHB42N03T
BUK7528-30
PHB42N03T
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BUK7528-30
Abstract: PHB45N03T
Text: Philips Semiconductors Product specification TrenchMOS transistor Standard level FET GENERAL DESCRIPTION N-channel enhancement mode standard level field-effect power transistor in a plastic suitable for surface mounting envelope using ’trench’ technology. The device
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OT404
PHB45N03T
BUK7528-30
PHB45N03T
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BUK445-600B
Abstract: No abstract text available
Text: N AMER PHILIPS/DISCRETE bTE D • hbS3T31 003D575 Philips Semiconductors PowerMOS transistor PINNING -S O T 1 86 PIN BUK445-600B QUICK REFERENCE DATA SYMBOL PARAMETER < o Cl GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a
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hbS3T31
BUK445-600B
-SOT186
BUK445-600B
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Untitled
Abstract: No abstract text available
Text: Product specification Philips Semiconductors Silicon Diffused Power Transistor BUT11AF GENERAL DESCRIPTION High-voltage, high-speed glass-passivated npn power transistor in a S O U 86 envelope with electrically insulated mounting base,intended for use in converters, inverters, switching regulators, motor control systems, etc.
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BUT11AF
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Philips transistor k1
Abstract: BUK445-600B
Text: N AMER PH IL IPS/DISCRETE bTE D • hbS3T31 003D575 2ST « A P X Philips Semiconductors Product Specification PowerMOS transistor PINNING -S O T 1 86 PIN QUICK REFERENCE DATA SYMBOL PARAMETER < o Cl GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a
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003D575
BUK445-600B
PINNING-SOT186
/V-12
Philips transistor k1
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lc 945 p transistor NPN TO 92
Abstract: BLX96 blx96a IEC134 lc 945 p transistor s3 vision
Text: N AUER PHILIPS/DISCRETE ObE D 86 D 0 1 8 5 2 MAINTENANCE TYPE D ~ • T ^53*131 GOIHCHO T ~ ÔY [I "" BLX96 JL U.H.F. LINEAR POW ER TRANSISTOR N-P-N multi-emitter silicon planar epitaxial transistor primarily for use in linear u.h.f. amplifiers for television transposers and transmitters.
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0G14D10
BLX96
lc 945 p transistor NPN TO 92
BLX96
blx96a
IEC134
lc 945 p transistor
s3 vision
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Untitled
Abstract: No abstract text available
Text: i - 86D 0 1 86 0 m ObE D N AUER PHILIPS/DISCRETE D T - bbSBTBl DDIMDIS 3 T" 7 3 BLX97 MAINTENANCE TYPE U.H.F. LINEAR POWER TRANSISTOR N-P-N m ulti-em itter silicon planar epitaxial transistor primarily fo r use in linear u.h.f. amplifiers for television transposers and transmitters.
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BLX97
class-78
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BLU51
Abstract: No abstract text available
Text: N AMER PHILIPS/DISCRETE OLE D 86 D 0 1 1 2 4 ^53^31 0Q133b2 □ D 7- - 3 3 - BLU 51 A V.H.F./U.H.F. PUSH-PULL POWER TRANSISTOR N-P-N silicon planar epitaxial push-pull transistor designed fo r use in m ilitary and professional wideband applications in the 30 to 400 MHz range.
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0Q133L
BLU51
BLU51
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BLW 95
Abstract: No abstract text available
Text: h*\E t> m b b s a ^ a i o o s T H b i o?i i IAPX N A PIER PHILIPS/DISCRETE BLW 86 H.F./V.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor intended fo r use in class-A, AB and B operated h.f. and v.h.f. transmitters with a nominal supply voltage of 28 V. The transistor is resistance stabilized and is
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BLV21
Abstract: RF POWER TRANSISTOR NPN vhf
Text: N A ME R PHILIPS/DISCRETE t 'îE j> m □ □ 2 ñ ci m IAPX t t d BLV21 I V.H.F. POWER TRANSISTOR N-P-N silicon planar ep itaxial transistor intended fo r use in class-A, B and C operated h .f. and v .h .f. transm itters w ith a nom inal supply voltage o f 2 8 V . T h e transistor is resistance stabilized and is guaran
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BLV21
OT-123.
D26li4fl
7Z68950
7Z689S1
7Z68949
BLV21
RF POWER TRANSISTOR NPN vhf
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639 TRANSISTOR PNP
Abstract: BFQ34T TRANSISTOR P 3 BFQ54T philips MATV amplifiers GHz PNP transistor MEA336
Text: Philips Semiconductors Product specification PNP 4 GHz wideband transistor BFQ54T PHILIPS INTERNATIONAL D E S C R IP T IO N P N P transistor in a plastic S O T 3 7 package. It is primarily intended for use in M A TV and m icrowave amplifiers such a s in aerial amplifiers, radar
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BFQ34T.
BFQ54T
7110fl2ti
cur25
UBB33S
711Dfi2ti
639 TRANSISTOR PNP
BFQ34T
TRANSISTOR P 3
BFQ54T
philips MATV amplifiers
GHz PNP transistor
MEA336
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Untitled
Abstract: No abstract text available
Text: N AMER PHILIPS/DISCRETE m DbE J> 86D 01798 D Lb53T31 0Dm03L. 3 T - 31 ^ 6 * BLX91A A U.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor intended for transmitting applications in class-A, B or C with a supply voltage up to 28 V. The transistor is resistance stabilized and is guaranteed to withstand severe
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Lb53T31
0Dm03L.
BLX91A
D01404S
7Z68928
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Analog Voice scrambler
Abstract: TDA7050 transistor 835 TRANSISTOR regulator PCF2104 transistor 458 AUDIO Amplifier with transistor BC548 Philips Semiconductors Selection Guide BSN10A 2n5551 128
Text: Philips Semiconductors Functional index Selection guide PAGE SPEECH/TRANSMISSION CIRCUITS PCA1070 Multistandard programmable analog CMOS transmission IC 110 TEA1060; TEA1061 Versatile telephone transmission circuits with dialler interfac 483 TEA1062; TEA1062A
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PCA1070
TEA1060;
TEA1061
TEA1062;
TEA1062A
TEA1064A
TEA1064B
TEA1065
TEA1066T
TEA1067
Analog Voice scrambler
TDA7050
transistor 835
TRANSISTOR regulator
PCF2104
transistor 458
AUDIO Amplifier with transistor BC548
Philips Semiconductors Selection Guide
BSN10A
2n5551 128
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transistor 835
Abstract: Amplifier with transistor BC548 TRANSISTOR regulator AUDIO Amplifier with transistor BC548 transistor 81 110 w 85 transistor 81 110 w 63 transistor transistor 438 TRANSISTOR GUIDE transistor 649
Text: Philips Semiconductors Alphanumeric index Selection guide PAGE BC327; BC327A; BC328 Silicon planar epitaxial transistor 58 BC337; BC337A; BC338 Silicon planar epitaxial transistor 59 BC546; BC547; BC548 Silicon planar epitaxial transistor 60 BC556; BC557; BC558
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BC327;
BC327A;
BC328
BC337;
BC337A;
BC338
BC546;
BC547;
BC548
BC556;
transistor 835
Amplifier with transistor BC548
TRANSISTOR regulator
AUDIO Amplifier with transistor BC548
transistor 81 110 w 85
transistor 81 110 w 63
transistor
transistor 438
TRANSISTOR GUIDE
transistor 649
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blv59
Abstract: sot171
Text: N AMER PHILIPS/DISCRETE bRE D • bbS3T31 □ □ 2 C1 G 7 4 A GTb BLV59 U.H.F. LINEAR POWER TRANSISTOR N-P-N silicon planar e p ita xia l tran sisto r in SOT-171 envelope p rim a rily intended fo r use as linear a m p lifie r in u.h .f. television transm itters.
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bbS3T31
BLV59
OT-171
blv59
sot171
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BLX91A
Abstract: BLX91 R33F 0180 capacitor de polyester MHA IEC134
Text: N AMER~ PHILIPS/DISCRETE" 86D Dfc-E D • 1^53131 001403t. 01798 JI BLX91A U.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor intended for transmitting applications in class-A, B or C with a supply voltage up to 28 V. The transistor is resistance stabilized and is guaranteed to withstand severe
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tbS3T31
001403t.
BLX91A
BLX91A
BLX91
R33F
0180
capacitor de polyester MHA
IEC134
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Untitled
Abstract: No abstract text available
Text: Philips Semiconductors Product specification NPN video transistor BFQ225 APPLICATIONS • Primarily intended for cascode output and buffer stages in high resolution colour monitors. o DESCRIPTION NPN silicon transistor encapsulated in a 3-lead plastic SOT 128B package.
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BFQ225
OT128B.
UBG488
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multi-emitter transistor
Abstract: SOT-48 BLX96 IEC134 BLX-96 IEC-134
Text: bSE D • 7110a2b Q0b35MÛ 472 ■ PHIN MAINTENANCE TYPE_ | BLX96 PHILIPS INTERNATIONAL U.H.F. LINEAR POWER TRANSISTOR N -P -N m u lti-e m itte r silicon planar ep itaxial transistor p rim a rily fo r use in linear u .h .f. am plifiers fo r television transposers and tran sm itters.
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711D82b
BLX96
multi-emitter transistor
SOT-48
BLX96
IEC134
BLX-96
IEC-134
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Untitled
Abstract: No abstract text available
Text: Philips Semiconductors Product specification Silicon Diffused Power Transistor BU508DW GENERAL DESCRIPTION High voltage, high-speed switching npn transistors in a plastic envelope with integrated efficiency diode, primarily for use in horizontal deflection circuits of colour television receivers.
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BU508DW
100PD
/PD25
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