NEC 2403
Abstract: 3181 R33 2SC4227 2SC4227-T1 2SC4227-T2 of transistor C 4908 TC-2403 0 811 404 614
Text: DATA SHEET SILICON TRANSISTOR 2SC4227 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLD DESCRIPTION PACKAGE DIMENSIONS The 2SC4227 is a low supply voltage transistor designed for VHF, in millimeters UHF low noise amplifier.
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2SC4227
2SC4227
SC-70
2SC4227-T1
NEC 2403
3181 R33
2SC4227-T2
of transistor C 4908
TC-2403
0 811 404 614
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nec 2401 831
Abstract: nec 2401 2SC5010-T1 2SC5010 437 20000 marking 83 7749 transistor
Text: DATA SHEET SILICON TRANSISTOR 2SC5010 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION The 2SC5010 is an NPN epitaxial silicon transistor designed for use in low noise and small signal amplifiers from VHF band to L band. Low noise figure, high gain, and high current capability achieve a very wide dynamic range and
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2SC5010
2SC5010
nec 2401 831
nec 2401
2SC5010-T1
437 20000
marking 83
7749 transistor
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97CC
Abstract: transistor ESM 16 transistor ESM 30 ESM18 transistor ESM 18
Text: ESM 18 NPN SILICON TRANSISTOR, TRIPLE DIFFUSED TRANSISTOR SILIC IU M NPN, TRIPLE DIFFUSE High current fast switching transistor Transistor de commutation rapide fort courant V CEO 100 V Amplification BF ou H F grands signaux •c 25 A Thermal fatigue inspection
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CB-19
97CC
transistor ESM 16
transistor ESM 30
ESM18
transistor ESM 18
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A 564 transistor
Abstract: 3181 R33 transistor A 564
Text: DATA SHEET NEC SILICON TRANSISTOR 2SC4227 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLD DESCRIPTION The 2SC4227 is a low supply voltage transistor designed for VHF, PACKAGE DIMENSIONS in millimeters UHF low noise amplifier.
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2SC4227
2SC4227
SC-70
A 564 transistor
3181 R33
transistor A 564
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transistor NEC D 587
Abstract: 3181 R33 transistor c 3181
Text: DATA SHEET NEC SILICON TRANSISTOR 2SC4227 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLD DESCRIPTION PACKAGE DIMENSIONS The 2SC4227 is a low supply voltage transistor designed for VHF, in millimeters UHF low noise amplifier.
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2SC4227
2SC4227
SC-70
2SC4227-T1
transistor NEC D 587
3181 R33
transistor c 3181
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2sb504
Abstract: KPL 3009 2SB502 BLY34 germanium BF316A BSX12 2SD716, 2SB686 35W amplifiers bf197 acy52
Text: TRANSISTOR DATA TABLES Other Titles of Interest B P 85 International Transistor Equivalents Guide B P286 A R eferen ce G uide to Basic Electronics Terms BP287 A R eferen ce G uide to Practical Electronics Terms n TRANSISTOR DATA TABLES by Hans-Gunther Steidle
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ZO 107 MA
Abstract: 341S
Text: DATA SHEET NEC SILICON TRANSISTOR 2SC5009 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION The 2SC5009 is an NPN epitaxial silicon transistor designed for use PACKAGE DIMENSIONS in low noise and small signal am plifiers from VHF band to L band. Low
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2SC5009
2SC5009
ZO 107 MA
341S
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TRANSISTOR 2SC 2581
Abstract: 2sc 1919 NEC NF 932 2sc 1915 TRANSISTOR 2SC 733
Text: DATA SHEET NEC SILICON TRANSISTOR 2SC5009 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION The 2SC5009 is an NPN epitaxial silicon transistor designed for use in low noise and small signal am plifiers from VHF band to L band. Low PACKAGE DIMENSIONS
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2SC5009
2SC5009
TRANSISTOR 2SC 2581
2sc 1919
NEC NF 932
2sc 1915
TRANSISTOR 2SC 733
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Untitled
Abstract: No abstract text available
Text: Philips Semiconductors Product specification PowerMOS transistor BUK564-200A Logic level GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode logic level field-effect power transistor in a
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BUK564-200A
BUK564-200A
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Untitled
Abstract: No abstract text available
Text: Philips Semiconductors Product specification PowerMOS transistor BUK564-200A Logic level FET_ GENERAL DESCRIPTION QUICK REFERENCE DATA SYMBOL N-channel enhancement mode logic level fieid-effect power transistor in a
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BUK564-200A
BUK564-200A
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Untitled
Abstract: No abstract text available
Text: N AMER PHILIPS/DISCRETE b^E D bbS3^31 QQ2T474 72T APX DLVVO / V.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor intended for use in class-A, B and C operated mobile h.f, and v.h.f. transmitters with a nominal supply voltage of 13,5 V. The transistor is resistance stabilized and is
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QQ2T474
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Untitled
Abstract: No abstract text available
Text: Philips Semiconductors Product specification PowerMOS transistor Logic level FET_ _ GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode logic level field-effect power transistor in a plastic envelope suitable for surface
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BUK565-100A
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buf708
Abstract: BUF708D NPN HIGH VOLTAGE SWITCHING
Text: _ BUF708D Preliminary Specification Vishay Telefun ken Silicon NPN High Voltage Switching Transistor Features • Simple-sWitch-Off Transistor SWOT • HIGH SPEED technology • Planar passivation • 100 kHz switching rate
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BUF708D
2Q-Oct-98
20-Qct-99
buf708
NPN HIGH VOLTAGE SWITCHING
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CI Z 131 R-10
Abstract: BLW87 h a 431 transistor transistor L6
Text: N AMER PHILIPS/DISCRETE tlE » • bbS3T31 0051474 72T H A P X BL-VVO A V.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor intended for use in class-A, B and C operated mobile h.f, and v.h.f. transmitters with a nominal supply voltage of 13,5 V. The transistor is resistance stabilized and is
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bbS3T31
OT-123.
7Z67567
CI Z 131 R-10
BLW87
h a 431 transistor
transistor L6
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transistor BUX
Abstract: BUX10 bux THOMSON 4682 bux 10
Text: *BUX10 NPN SILICON TRANSISTOR, TRIPLE DIFFUSED TR A N S IS TO R S IL IC IU M NPN, T R IP L E D IF F U S E % Preferred device D isp o sitif recommandé High speed, high current, high power transistor Transistor de puissance rapide, fo rt courant 125 V 25 A
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CB-19
transistor BUX
BUX10
bux THOMSON
4682
bux 10
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transistor smd za
Abstract: smd transistor JJ jb smd ic smd transistor sy BUD7312
Text: S B _ BUD7312 ▼ Vishay Telefunken Silicon NPN High Voltage Switching Transistor Features • Simple-sWitch-Off Transistor SWOT • Very low dynamic saturation • HIGH SPEED technology • Very low operating temperature
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BUD7312
BUD7312
Collec-Jul-99
22-Jul-99
transistor smd za
smd transistor JJ
jb smd ic
smd transistor sy
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BUF653
Abstract: No abstract text available
Text: _ BUF653 Vishay Telefunken Silicon NPN High Voltage Switching Transistor Features • Simple-sWitch-Off Transistor SWOT • HIGH SPEED technology • Planar passivation • 100 kHz switching rate • Very low switching losses
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BUF653
20-Jan-99
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smd transistor ISS
Abstract: CM12A transistor smd za BUD744 SMD Transistor BM smd transistor ed j 6 smd transistor 20JAN99
Text: _ BUD744 Vishay Telefunken Silicon NPN High Voltage Switching Transistor Features • Simple-sWitch-Off Transistor SWOT • Very low dynamic saturation • HIGH SPEED technology • Very low operating temperature • Planar passivation
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BUD744
BUD744
BUD744-SMD
20-Jan-99
smd transistor ISS
CM12A
transistor smd za
SMD Transistor BM
smd transistor ed
j 6 smd transistor
20JAN99
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PDF
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BUF742
Abstract: No abstract text available
Text: _ BUF742 Vishay Telefunken Silicon NPN High Voltage Switching Transistor Features • Simple-sWitch-Off Transistor SWOT • HIGH SPEED technology • Planar passivation • 100 kHz switching rate • Very low switching losses
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BUF742
20-Jan-99
BUF742
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BUF650
Abstract: NPN HIGH VOLTAGE SWITCHING
Text: _ BUF650 Vishay Telefunken Silicon NPN High Voltage Switching Transistor Features • Simple-sWitch-Off Transistor SWOT • HIGH SPEED technology • Planar passivation • 100 kHz switching rate • Very low switching losses
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BUF650
20-Jan-99
NPN HIGH VOLTAGE SWITCHING
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BUF642
Abstract: No abstract text available
Text: _ BUF642 Vishay Telefunken Silicon NPN High Voltage Switching Transistor Features • Simple-sWitch-Off Transistor SWOT • HIGH SPEED technology • Planar passivation • 100 kHz switching rate • Very low switching losses
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BUF642
20-Jan-99
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PDF
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BUF660
Abstract: No abstract text available
Text: _ BUF660 Vishay Telefunken Silicon NPN High Voltage Switching Transistor Features • Simple-sWitch-Off Transistor SWOT • HIGH SPEED technology • Planar passivation • 100 kHz switching rate • Very low switching losses
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BUF660
20-Jan-99
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PDF
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BUF7312
Abstract: No abstract text available
Text: _ BUF7312 Vishay Telefunken Silicon NPN High Voltage Switching Transistor Features • Simple-sWitch-Off Transistor SWOT • HIGH SPEED technology • Planar passivation • 100 kHz switching rate • Very low switching losses
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BUF7312
22-Jul-99
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PDF
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BUF630
Abstract: No abstract text available
Text: _ BUF630 Vishay Telefunken Silicon NPN High Voltage Switching Transistor Features • Simple-sWitch-Off Transistor SWOT • HIGH SPEED technology • Planar passivation • 100 kHz switching rate • Very low switching losses
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BUF630
20-Jan-99
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