2SC945
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD 2SC945 NPN SILICON TRANSISTOR AUDIO FREQUENCY AMPLIFIER HIGH FREQUENCY OSC NPN TRANSISTOR DESCRIPTION The UTC 2SC945 is an audio frequency amplifier high frequency OSC NPN transistor. FEATURES * Collector-Emitter voltage:
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2SC945
2SC945
150mA
2SA733
2SC945L-x-T92-B
2SC945G-x-T92-B
2SC945L-x-T92-K
2SC945G-x-T92-K
QW-R201-005
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mmbt945
Abstract: MMBT733 audio output TRANSISTOR NPN 094B BVCBO-50V
Text: UNISONIC TECHNOLOGIES CO., LTD MMBT945 NPN SILICON TRANSISTOR AUDIO FREQUENCY AMPLIFIER HIGH FREQUENCY OSC NPN TRANSISTOR DESCRIPTION The UTC MMBT945 is an audio frequency amplifier high frequency OSC NPN transistor. FEATURES * Collector-Emitter Voltage:
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MMBT945
MMBT945
150mA
MMBT733
MMBT945G-x-AE3-R
MMBT945G-x-AL3-R
OT-23
OT-323
QW-R206-094
MMBT733
audio output TRANSISTOR NPN
094B
BVCBO-50V
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2sc945
Abstract: 2SC945L 2SC945 R
Text: UNISONIC TECHNOLOGIES CO., LTD 2SC945 NPN SILICON TRANSISTOR AUDIO FREQUENCY AMPLIFIER HIGH FREQUENCY OSC NPN TRANSISTOR DESCRIPTION 1 The UTC 2SC945 is an audio frequency amplifier high frequency OSC NPN transistor. TO-92 FEATURES * Collector-Emitter voltage:
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2SC945
2SC945
150mA
2SA733
2SC945L
2SC945-x-T92-B
2SC945L-x-T92-B
2SC945-x-T92-K
2SC945L-x-T92-K
2SC945L
2SC945 R
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2SC945
Abstract: 2SC945L 2SC945G transistor 2sc945 2SC945 transistor 2SC945 DATASHEET 2Sc945 equivalent 2sC945 npn transistor 2SC945 Q equivalent 2SC945 R
Text: UNISONIC TECHNOLOGIES CO., LTD 2SC945 NPN SILICON TRANSISTOR AUDIO FREQUENCY AMPLIFIER HIGH FREQUENCY OSC NPN TRANSISTOR DESCRIPTION The UTC 2SC945 is an audio frequency amplifier high frequency OSC NPN transistor. FEATURES * Collector-Emitter voltage:
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2SC945
2SC945
150mA
2SA733
2SC945L
2SC945G
2SC945-x-T92-B
2SC945-x-T92-K
2SC945L-x-T92-B
2SC945L-x-T92-K
2SC945L
2SC945G
transistor 2sc945
2SC945 transistor
2SC945 DATASHEET
2Sc945 equivalent
2sC945 npn transistor
2SC945 Q equivalent
2SC945 R
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mmbt945
Abstract: MMBT733 audio output TRANSISTOR NPN BVCBO-50V Amplifier Transistor NPN 40V 100mA
Text: UNISONIC TECHNOLOGIES CO., LTD MMBT945 NPN SILICON TRANSISTOR AUDIO FREQUENCY AMPLIFIER HIGH FREQUENCY OSC NPN TRANSISTOR DESCRIPTION The UTC MMBT945 is an audio frequency amplifier high frequency OSC NPN transistor. FEATURES * Collector-Emitter voltage:
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MMBT945
MMBT945
150mA
MMBT733
MMBT945L
MMBT945G
MMBT945-x-AE3-R
MMBT945-x-AL3-R
MMBT945L-x-AE3-R
MMBT945G-x-AE3-R
MMBT733
audio output TRANSISTOR NPN
BVCBO-50V
Amplifier Transistor NPN 40V 100mA
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2SC945 P
Abstract: 2sc945 npn transistor
Text: UTC 2SC945 NPN EPITAXIAL SILICON TRANSISTOR AUDIO FREQUENCY AMPLIFIER HIGH FREQUENCY OSC NPN TRANSISTOR DESCRIPTION The UTC 2SC945 is an audio frequency amplifier high frequency OSC NPN transistor. 1 FEATURES *Collector-Emitter voltage: BVCBO=50V *Collector current up to 150mA
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2SC945
2SC945
150mA
2SA733
QW-R201-005
2SC945 P
2sc945 npn transistor
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2SC945
Abstract: 2SC945 DATASHEET 2SC945 Q equivalent 2SA733 2sc945 npn transistor
Text: UTC 2SC945 NPN EPITAXIAL SILICON TRANSISTOR AUDIO FREQUENCY AMPLIFIER HIGH FREQUENCY OSC NPN TRANSISTOR DESCRIPTION The UTC 2SC945 is an audio frequency amplifier high frequency OSC NPN transistor. 1 FEATURES *Collector-Emitter voltage: BVCBO=50V *Collector current up to 150mA
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2SC945
2SC945
150mA
2SA733
QW-R201-005
2SC945 DATASHEET
2SC945 Q equivalent
2SA733
2sc945 npn transistor
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transistor c 9018
Abstract: No abstract text available
Text: UTC 9018 NPN EPITAXIAL PLANAR TRANSISTOR NPN EPITAXIAL PLANAR TRANSISTOR DESCRIPTION The UTC 9018 is designed for use in AM/FM if amplifier and local oscillator of FM/VHF tuner. 1 TO-92 ABSOLUTE MAXIMUM RATINGS SYMBOL VALUE UNIT Collector-Base Voltage PARAMETER
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100uA
transistor c 9018
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ST 9018
Abstract: Transistor st 9018 transistor c 9018 9018 transistor S 9018 to-92 9018 9018 transistor NPN equivalent of 9018 transistor NPN Silicon Epitaxial Planar Transistor 9018 transistor 9018 NPN
Text: ST 9018 NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into six groups, D, E, F, G, H and I, according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations.
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transistor c 9018
Abstract: ST 9018 9018 transistor NPN Silicon Epitaxial Planar Transistor 9018 Transistor st 9018 equivalent of 9018 transistor 9018 S 9018 to-92 9018 D Transistor Br 9018
Text: ST 9018 NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into six groups, D, E, F, G, H and I, according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations.
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transistor c 9018
Abstract: transistor 9018 NPN NPN Silicon Epitaxial Planar Transistor 9018 9018 transistor NPN 9018 transistor transistor 9018
Text: ST 9018 NPN Silicon Epitaxial Planar Transistor for AM/FM amplifier and local oscillator of FM/VHF tuner applications. The transistor is subdivided into six groups, D, E, F, G, H and I, according to its DC current gain. On special request, these transistors can be
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transistor c 9018
Abstract: ic 9018 9018 NPN Silicon Epitaxial Planar Transistor 9018 9018 transistor 9018 transistor NPN transistor 9018 NPN C 9018 transistor Br 9018
Text: ST 9018 NPN Silicon Epitaxial Planar Transistor for AM/FM amplifier and local oscillator of FM/VHF tuner applications. The transistor is subdivided into six groups, D, E, F, G, H and I, according to its DC current gain. On special request, these transistors can be
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transistor 9018 NPN
Abstract: 9018 transistor 9018 NPN transistor 9018 transistor NPN transistor 9018
Text: UTC 9018 UTC NPN EPITAXIAL PLANAR TRANSISTOR UNISONIC TECHNOLOGIES CO. LTD 2 QW-R201-025,A UTC 9018 NPN EPITAXIAL PLANAR TRANSISTOR UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values such as maximum ratings, operating condition ranges, or
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QW-R201-025
transistor 9018 NPN
9018 transistor
9018 NPN transistor
9018 transistor NPN
transistor 9018
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD 2SB798 PNP EPITAXIAL SILICON TRANSISTOR POWER TRANSISTOR DESCRIPTION The UTC 2SB798 is designed for audio frequency power amplifier applications, especially in Hybrid Integrated Circuits. FEATURES * Low Collector Saturation Voltage:
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2SB798
2SB798
-100mA
2SB798G-x-AB3-R
OT-89
QW-R208-020
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2sa733
Abstract: 2SC945 DATASHEET 2SC945
Text: UTC 2SA733 NPN EPITAXIAL SILICON TRANSISTOR LOW FREQUENCY AMPLIFIER PNP EPITAXIAL SILICON TRANSISTOR DESCRIPTION The UTC 2SA733 is an low frequency amplifier. 1 FEATURES *Collector-Emitter voltage: BVCBO=-50V *Collector current up to –150mA *High hFE linearity
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2SA733
2SA733
150mA
2SC945
2SC945 DATASHEET
2SC945
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SMD transistor MARKING CODE 43
Abstract: TRANSISTOR SMD MARKING CODE A1 TRANSISTOR SMD MARKING CODE 42 SMD Transistor A1 TC114E smd TRANSISTOR code marking 36 smd TRANSISTOR code marking 013 Transistor SMD marking code NV smd transistor 023 TRANSISTOR SMD MARKING CODE X D
Text: DISCRETE SEMICONDUCTORS DATA SHEET PDTC114E series NPN resistor-equipped transistor; R1 = 10 kΩ, R2 = 10 kΩ Product specification Supersedes data of 1999 May 31 2003 Apr 10 Philips Semiconductors Product specification NPN resistor-equipped transistor;
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PDTC114E
resistor-equipPDTC114EE
PDTC114EU
PDTC114EEF
SMD transistor MARKING CODE 43
TRANSISTOR SMD MARKING CODE A1
TRANSISTOR SMD MARKING CODE 42
SMD Transistor A1
TC114E
smd TRANSISTOR code marking 36
smd TRANSISTOR code marking 013
Transistor SMD marking code NV
smd transistor 023
TRANSISTOR SMD MARKING CODE X D
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2SA733
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD 2SA733 PNP SILICON TRANSISTOR LOW FREQUENCY AMPLIFIER PNP EPITAXIAL SILICON TRANSISTOR DESCRIPTION The UTC 2SA733 is a low frequency amplifier. FEATURES * Collector-emitter voltage: BVCEO=-50V * Collector current up to -150mA
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2SA733
2SA733
-150mA
2SC945
2SA733L-x-AE3-R
2SA733G-x-AE3-R
2SA733L-x-AL3-R
2SA733G-x-AL3-R
2SA733L-x-T92-R
2SA733G-x-T92-R
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2SA733
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD 2SA733 PNP SILICON TRANSISTOR LOW FREQUENCY AMPLIFIER PNP EPITAXIAL SILICON TRANSISTOR DESCRIPTION The UTC 2SA733 is a low frequency amplifier. FEATURES * Collector-emitter voltage: BVCEO=-50V * Collector current up to -150mA
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2SA733
2SA733
-150mA
2SC945
2SA733L-x-AE3-R
2SA733G-x-AE3-R
2SA733L-x-AL3-R
2SA733G-x-AL3-R
2SA733L-x-T92-B
2SA733G-x-T92-B
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2SA733
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD 2SA733 PNP SILICON TRANSISTOR LOW FREQUENCY AMPLIFIER PNP EPITAXIAL SILICON TRANSISTOR DESCRIPTION The UTC 2SA733 is a low frequency amplifier. FEATURES * Collector-emitter voltage: BVCEO=-50V * Collector current up to -150mA
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2SA733
2SA733
-150mA
2SC945
2SA733G-x-AE3-R
2SA733G-x-AL3-R
2SA733L-x-T92-B
2SA733G-x-T92-B
2SA733L-x-T92-K
2SA733G-x-T92-K
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Untitled
Abstract: No abstract text available
Text: UTC 2SB798 PNP EPITAXIAL SILICON TRANSISTOR POWER TRANSISTOR DESCRIPTION The UTC 2SB798 is designed for audio frequency power amplifier applications, especially in Hybrid Integrated Circuits. 1 FEATURES *Low Collector Saturation Voltage: VCE sat < -0.4V (Ic= -1.0A,IB=-100mA )
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2SB798
2SB798
-100mA
OT-89
QW-R208-020
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dk qw
Abstract: 2SB798
Text: UTC 2SB798 PNP EPITAXIAL SILICON TRANSISTOR POWER TRANSISTOR DESCRIPTION The UTC 2SB798 is designed for audio frequency power amplifier applications, especially in Hybrid Integrated Circuits. 1 FEATURES *Low Collector Saturation Voltage: VCE sat < -0.4V (Ic= -1.0A,IB=-100mA )
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2SB798
2SB798
-100mA
OT-89
QW-R208-020
dk qw
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PDF
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Untitled
Abstract: No abstract text available
Text: UTC 2SA733 PNP EPITAXIAL SILICON TRANSISTOR LOW FREQUENCY AMPLIFIER PNP EPITAXIAL SILICON TRANSISTOR DESCRIPTION The UTC 2SA733 is an low frequency amplifier. 1 FEATURES *Collector-Emitter voltage: BVCBO=-50V *Collector current up to –150mA *High hFE linearity
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2SA733
2SA733
150mA
2SC945
QW-R201-003
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Untitled
Abstract: No abstract text available
Text: UTC 2SA733 PNP EPITAXIAL SILICON TRANSISTOR LOW FREQUENCY AMPLIFIER PNP EPITAXIAL SILICON TRANSISTOR DESCRIPTION The UTC 2SA733 is an low frequency amplifier. 1 FEATURES *Collector-Emitter voltage: BVCBO=-50V *Collector current up to –150mA *High hFE linearity
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2SA733
2SA733
150mA
2SC945
QW-R201-003
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diode st 4148
Abstract: ST 4148 LL4148 st 8050 sot-23 st 8050 9016 transistor 9014 SOT 23 4148 st TRANSISTOR 4148 1N4001-1N4007
Text: TRANSISTOR & DIODE Transistor -S T 8050 - 1.5A TO-92 - ST 8050 (TO-92) - ST 8550 - 1.5A (TO-92) - ST 8550 (TO-92) - ST 9011 (TO-92) - ST 9012 (TO-92) - ST 9013 (TO-92) - ST 9014 (TO-92 -S T 9015 (TO-92) - ST 9016 (TO-92) -S T 9018 (TO-92) o - MMBT8050LT1 -1.5A (SOT-23)
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MMBT8050LT1
OT-23)
-LL4001-LL4007
-LL4148
1N4001-1N4007
diode st 4148
ST 4148
LL4148 st
8050 sot-23
st 8050
9016 transistor
9014 SOT 23
4148 st
TRANSISTOR 4148
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