oz960
Abstract: khb*9D5N20P MB4213 KIA78*pI MN1280 F10P048 KIA7812A MJE13007 mb4213 equivalent TRANSISTOR SMD N2 3j
Text: Table of Contents Index 4 SMD ✞✟ Bipolar Junction Transistors Transistor Line-up PNP Transistor Transistor Line-up (NPN Transistor) Small Signal General Purpose Transistors Small Signal Low Noise Transistors Small Signal Audio Muting Transistors Small Signal High hFE Transistors
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KIA7900PI
TC7SH04FU
KIC7SH04FU
SC604*
KAC3301QN
M51943
KIA7042AP/AF
TC7SH08FU
KIC7SH08FU
LT1937
oz960
khb*9D5N20P
MB4213
KIA78*pI
MN1280
F10P048
KIA7812A
MJE13007
mb4213 equivalent
TRANSISTOR SMD N2 3j
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ZO 103 MA 75 623
Abstract: ZO 103 MA 75 542 1 928 405 767 NEC C 3568 TD-2433 2SC5008 2SC5008-T1 4557 nec 518 1149 0 44 111 1 928 405 452
Text: DATA SHEET SILICON TRANSISTOR 2SC5008 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION The 2SC5008 is an NPN epitaxial silicon transistor designed for use PACKAGE DIMENSIONS in millimeters in low noise and small signal amplifiers from VHF band to L band. Low
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2SC5008
2SC5008
ZO 103 MA 75 623
ZO 103 MA 75 542
1 928 405 767
NEC C 3568
TD-2433
2SC5008-T1
4557 nec
518 1149 0 44 111
1 928 405 452
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Untitled
Abstract: No abstract text available
Text: Ordering number:ENN3259 2SB1230 : PNP Epitaxial Planar Silicon Transistor 2SD1840 : NPN Triple Diffused Planar Silicon Transistor 2SB1230/2SD1840 100V/4A Switching Applications Applications Package Dimensions • Motor drivers, relay drivers, converters and other
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ENN3259
2SB1230
2SD1840
2SB1230/2SD1840
00V/4A
2SB1230/2SD1840]
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nec 2401 831
Abstract: nec 2401 2SC5010-T1 2SC5010 437 20000 marking 83 7749 transistor
Text: DATA SHEET SILICON TRANSISTOR 2SC5010 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION The 2SC5010 is an NPN epitaxial silicon transistor designed for use in low noise and small signal amplifiers from VHF band to L band. Low noise figure, high gain, and high current capability achieve a very wide dynamic range and
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2SC5010
2SC5010
nec 2401 831
nec 2401
2SC5010-T1
437 20000
marking 83
7749 transistor
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BFV421
Abstract: BFV420 BP317
Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 BFV421 PNP high voltage transistor Product specification File under Discrete Semiconductors, SC04 1996 Dec 09 Philips Semiconductors Preliminary specification PNP high voltage transistor BFV421 PINNING
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M3D186
BFV421
BFV420.
MAM285
SCA52
117041/00/01/pp8
BFV421
BFV420
BP317
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BF588
Abstract: BP317
Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D067 BF588 PNP high-voltage transistor Product specification Supersedes data of September 1994 File under Discrete Semiconductors, SC04 1996 Dec 09 Philips Semiconductors Product specification PNP high-voltage transistor
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M3D067
BF588
O-202
MBH792
O-202)
SCA52
117041/00/02/pp8
BF588
BP317
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2SB1230
Abstract: 2SD1840
Text: Ordering number:EN3259 2SB1230 : PNP Epitaxial Planar Silicon Transistor 2SD1840 : NPN Triple Diffused Planar Silicon Transistor 2SB1230/2SD1840 100V/4A Switching Applications Applications Package Dimensions • Motor drivers, relay drivers, converters and other
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EN3259
2SB1230
2SD1840
2SB1230/2SD1840
00V/4A
2SB1230/2SD1840]
2SB1230
2SD1840
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vhf linear amplifier
Abstract: vhf linear pulse power amplifier BLV33F MGG130
Text: DISCRETE SEMICONDUCTORS DATA SHEET BLV33F VHF linear power transistor Product specification 1996 Oct 10 Philips Semiconductors Product specification VHF linear power transistor BLV33F PINNING - SOT119A FEATURES • Internally matched input for wideband operation and
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BLV33F
OT119A
DESCRIPT31
SCA52
127041/1200/01/pp20
vhf linear amplifier
vhf linear pulse power amplifier
BLV33F
MGG130
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BLV2044
Abstract: chip die npn transistor
Text: DISCRETE SEMICONDUCTORS DATA SHEET BLV2044 UHF power transistor Product specification Supersedes data of 1996 Feb 09 1996 Nov 14 Philips Semiconductors Product specification UHF power transistor BLV2044 FEATURES PINNING - SOT437A • Emitter ballasting resistors for optimum temperature
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BLV2044
OT437A
SCA52
127061/1200/02/pp12
BLV2044
chip die npn transistor
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BLV2045
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS DATA SHEET BLV2045 UHF power transistor Product specification Supersedes data of 1996 Feb 09 1996 Nov 13 Philips Semiconductors Product specification UHF power transistor BLV2045 FEATURES PINNING - SOT390A • Emitter ballasting resistors for optimum temperature
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BLV2045
OT390A
the31
SCA52
127061/1200/02/pp16
BLV2045
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la 4440 amplifier circuit diagram 300 watt
Abstract: la 4440 amplifier circuit diagram 300 watt diode LT 7229 2sd323 YM 7137 3D DA 3807 pdf transistor inverter welder 4 schematic 2N5630 THYRISTOR br 403 1N3492
Text: Alphanumeric Index Power Transistor Selector Guide Power Transistor Cross Reference Power Transistor Data Sheets Thyristor Selector Guide Thyristor Cross Reference Thyristor Data Sheets Leadforms, Hardware, and Mounting Techniques R ectifier and Zener Diode
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AN-784A
la 4440 amplifier circuit diagram 300 watt
la 4440 amplifier circuit diagram 300 watt
diode LT 7229
2sd323
YM 7137 3D
DA 3807 pdf transistor
inverter welder 4 schematic
2N5630
THYRISTOR br 403
1N3492
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2sb504
Abstract: KPL 3009 2SB502 BLY34 germanium BF316A BSX12 2SD716, 2SB686 35W amplifiers bf197 acy52
Text: TRANSISTOR DATA TABLES Other Titles of Interest B P 85 International Transistor Equivalents Guide B P286 A R eferen ce G uide to Basic Electronics Terms BP287 A R eferen ce G uide to Practical Electronics Terms n TRANSISTOR DATA TABLES by Hans-Gunther Steidle
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ZO 107 MA
Abstract: 341S
Text: DATA SHEET NEC SILICON TRANSISTOR 2SC5009 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION The 2SC5009 is an NPN epitaxial silicon transistor designed for use PACKAGE DIMENSIONS in low noise and small signal am plifiers from VHF band to L band. Low
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2SC5009
2SC5009
ZO 107 MA
341S
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TRANSISTOR 2SC 2581
Abstract: 2sc 1919 NEC NF 932 2sc 1915 TRANSISTOR 2SC 733
Text: DATA SHEET NEC SILICON TRANSISTOR 2SC5009 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION The 2SC5009 is an NPN epitaxial silicon transistor designed for use in low noise and small signal am plifiers from VHF band to L band. Low PACKAGE DIMENSIONS
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2SC5009
2SC5009
TRANSISTOR 2SC 2581
2sc 1919
NEC NF 932
2sc 1915
TRANSISTOR 2SC 733
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928 606 402 00
Abstract: No abstract text available
Text: DATA SHEET NEC SILICON TRANSISTOR 2SC5008 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION PACKAGE DIMENSIONS The 2SC5008 is an NPN epitaxial silicon transistor designed for use in millimeters in low noise and small signal am plifiers from VHF band to L band. Low
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2SC5008
2SC5008
928 606 402 00
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TRANSISTOR LD25
Abstract: No abstract text available
Text: Philips Semiconductors Product Specification PowerMOS transistor BUK581-100A Logic level GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope
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BUK581-100A
OT223
BUK581
-100A
TRANSISTOR LD25
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2n 914
Abstract: transistor 914 NPN transistor SST 117 2N914 914 transistor
Text: *2N 914 NPN SILICON TRANSISTOR, EPITAXIAL TRANSISTOR NPN SILIC IU M , E P ITAXIAL Preferred device D isp o sitif recommandé • Low current fast switching Commutation rapide faible courant Maximum power dissipation V CEO 15 V h ji^ d O mA 3 0 -1 2 0 fT 300 MHz min.
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CB-16
-40mA
2n 914
transistor 914
NPN transistor SST 117
2N914
914 transistor
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Untitled
Abstract: No abstract text available
Text: Philips Semiconductors Product Specification PowerMOS transistor BUK581-100A Logic tevel FET _ GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope suitable for surface mount
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BUK581-100A
OT223
BUK581
-100A
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BLX93A
Abstract: BLX93 PCOT 01827 IEC134 transistor WC 2C TRANSISTOR G13 plw series capacitor TH90
Text: N AMER PHILIPS/DISCRETE _ 8 6 0 0 1 8 2 2 ObE D D ~T - • * 3 bbS3T31 G014Gb0 Ü “j ^ BLX93A U.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor intended for transmitting applications in class-A, B or C with a supply voltage up to 28 V. The transistor is resistance stabilized and Is guaranteed to withstand severe
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BLX93A
BLX93A
BLX93
PCOT
01827
IEC134
transistor WC 2C
TRANSISTOR G13
plw series capacitor
TH90
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transistor NEC B 617
Abstract: nec 2035 744 zo 607 p 408 7749 transistor 2sc5010 ic 151 811 transistor 3568
Text: DATA SHEET NEC SILICON TRANSISTOR 2SC5010 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION The 2SC5010 is an NPN epitaxial silicon transistor designed for use in low noise and small signal am plifiers from VHF band to L band. Low noise figure, high gain, and high current capability achieve a very w ide dynam ic range and
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2SC5010
2SC5010
transistor NEC B 617
nec 2035 744
zo 607 p 408
7749 transistor
ic 151 811
transistor 3568
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Untitled
Abstract: No abstract text available
Text: N AMER PHILIPS/DISCRETE bb53^31 OOE^SH? BLW 9 7 b'lE D IAPX Jl H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor designed fo r use in class-A, AB and B operated high-power industrial and military transmitting equipment in the h.f. band. The transistor offers excellent performance as a linear amplifier in s.s.b. applications. It is resistance
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BUK464-200A
Abstract: No abstract text available
Text: Product specification Philips Semiconductors PowerMOS transistor GENERAL DESCRIPTION BUK464-200A QUICK REFERENCE DATA N-channel enhancement mode field-effect power transistor in a plastic envelope suitable for surface mount applications. The device is intended for use in
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BUK464-200A
VALUES1996
OT404
BUK464-200A
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2N2222A 338
Abstract: TFK 949 2N1167 halbleiter index transistor ad161 BSY19 al103 ac128 TFK 404 Tfk 931
Text: Towers' International Transistor Selector Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U p date One London: NEW YORK
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2CY17
2CY18
2CY19
2CY20
2CY21
500MA
500MA
2N2222A 338
TFK 949
2N1167
halbleiter index transistor
ad161
BSY19
al103
ac128
TFK 404
Tfk 931
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Untitled
Abstract: No abstract text available
Text: Philips Semiconductors Product specification TrenchMOS transistor Standard level FET GENERAL DESCRIPTION N-channel enhancement mode standard level field-effect power transistor in a plastic envelope using ’trench’ technology. The device features very low on-state resistance
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BUK7508-55
T0220AB
-ID/100
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