TRANSISTOR 965 Search Results

TRANSISTOR 965 Result Highlights (5)

Part	Manufacturer	Description
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns
XPQR8308QB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL
XPQ1R00AQB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL
TK190U65Z	Toshiba Electronic Devices & Storage Corporation	MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL

TRANSISTOR 965 Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
JAPAN transistor Abstract: 96-529-BD11 Text: Transistors General purpose transistor dual transistors IMZ4 FFeatures 1) Includes a 2SA1036K and a 2SC411K transistor in a SMT package. 2) Mounting possible with SMT3 automatic mounting machine. 3) Transistor elements are independent, eliminating interference.	Original	2SA1036K 2SC411K 500mA 96-529-BD11) JAPAN transistor 96-529-BD11	PDF
transistor Abstract: 2SC411K transistor 495 "General Purpose Transistor" TRANSISTOR 493 dual npn 500ma smt machines 500ma pnp NPN/PNP transistor pnp 500ma 40v Text: Transistors General purpose transistor dual transistors IMZ4 FFeatures 1) Includes a 2SA1036K and a 2SC411K transistor in a SMT package. 2) Mounting possible with SMT3 automatic mounting machine. 3) Transistor elements are independent, eliminating interference.	Original	2SA1036K 2SC411K 500mA 96-529-BD11) curvesC411K transistor transistor 495 "General Purpose Transistor" TRANSISTOR 493 dual npn 500ma smt machines 500ma pnp NPN/PNP transistor pnp 500ma 40v	PDF
nec 2401 831 Abstract: nec 2401 2SC5010-T1 2SC5010 437 20000 marking 83 7749 transistor Text: DATA SHEET SILICON TRANSISTOR 2SC5010 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION The 2SC5010 is an NPN epitaxial silicon transistor designed for use in low noise and small signal amplifiers from VHF band to L band. Low noise figure, high gain, and high current capability achieve a very wide dynamic range and	Original	2SC5010 2SC5010 nec 2401 831 nec 2401 2SC5010-T1 437 20000 marking 83 7749 transistor	PDF
SILICON NPN TRANSISTOR EPITAXIAL PLANAR TYPE Abstract: JAPAN transistor 2SD1484K IMX17 Text: Transistors General purpose transistor dual transistors IMX17 FFeatures 1) Two 2SD1484K chips in an SMT package. 2) Mounting possible with SMT3 automatic mounting machine. 3) Transistor elements are independent, eliminating interference. 4) High collector current.	Original	IMX17 2SD1484K 500mA 96-523-D15) SILICON NPN TRANSISTOR EPITAXIAL PLANAR TYPE JAPAN transistor IMX17	PDF
dual npn 500ma Abstract: 2SD1484K IMX17 NPN Silicon Epitaxial Planar Transistor Transistors General Text: Transistors General purpose transistor dual transistors IMX17 FFeatures 1) Two 2SD1484K chips in an SMT package. 2) Mounting possible with SMT3 automatic mounting machine. 3) Transistor elements are independent, eliminating interference. 4) High collector current.	Original	IMX17 2SD1484K 500mA 96-523-D15) dual npn 500ma IMX17 NPN Silicon Epitaxial Planar Transistor Transistors General	PDF
BSP16T1 Abstract: SMD310 Text: ON Semiconductort BSP16T1 SOT-223 Package High Voltage Transistor ON Semiconductor Preferred Device PNP Silicon SOT–223 PACKAGE PNP SILICON HIGH VOLTAGE TRANSISTOR SURFACE MOUNT MAXIMUM RATINGS Rating Symbol Value Unit Collector–Emitter Voltage VCEO –300	Original	BSP16T1 OT-223 318E-04, O-261AA r14525 BSP16T1/D BSP16T1 SMD310	PDF
transistor A 564 Abstract: two 2sc2412k A 564 transistor transistor 564 imx1 transistor A 562 imx1 2SC2412K UMx1 dual 2sc2412k NPN Silicon Epitaxial Planar Transistor Text: Transistors General purpose transistor dual transistors UMX1N / IMX1 FFeatures 1) Two 2SC2412K chips in a UMT or SMT package. 2) Mounting possible with UMT3 or SMT3 automatic mounting machines. 3) Transistor elements are independent, eliminating interference.	Original	2SC2412K 96-503-C22) transistor A 564 two 2sc2412k A 564 transistor transistor 564 imx1 transistor A 562 imx1 2SC2412K UMx1 dual 2sc2412k NPN Silicon Epitaxial Planar Transistor	PDF
marking DF Abstract: BF721T1 Text: MOTOROLA Order this document by BF721T1/D SEMICONDUCTOR TECHNICAL DATA BF721T1 PNP Silicon Transistor Motorola Preferred Device COLLECTOR 2,4 PNP SILICON TRANSISTOR SURFACE MOUNT BASE 1 EMITTER 3 MAXIMUM RATINGS 4 Symbol Value Unit Collector-Emitter Voltage	Original	BF721T1/D BF721T1 BF721T1/D* marking DF BF721T1	PDF
Untitled Abstract: No abstract text available Text: A Product Line of Diodes Incorporated FMMT491Q 60V NPN MEDIUM POWER TRANSISTOR IN SOT23 Description Mechanical Data This Bipolar Junction Transistor BJT has been designed to meet the • stringent requirements of Automotive Applications. • Case: SOT23	Original	FMMT491Q J-STD-020 MIL-STD-202, DS37009	PDF
Untitled Abstract: No abstract text available Text: ON Semiconductort High Current Surface Mount PNP Silicon Switching Transistor for Load Management in Portable Applications MMBT589LT1 30 VOLTS 2.0 AMPS PNP TRANSISTOR MAXIMUM RATINGS TA = 25°C Rating Symbol Max Unit Collector −Emitter Voltage VCEO −30	Original	MMBT589LT1 OT-23 236AB)	PDF
Untitled Abstract: No abstract text available Text: A Product Line of Diodes Incorporated FMMT591Q 60V PNP MEDIUM POWER TRANSISTOR IN SOT23 Description Mechanical Data This Bipolar Junction Transistor BJT has been designed to meet the stringent requirements of Automotive Applications. • Features Case: SOT23	Original	FMMT591Q J-STD-020 DS37010	PDF
BSP16T1 Abstract: SMD310 marking Bt2 Text: MOTOROLA Order this document by BSP16T1/D SEMICONDUCTOR TECHNICAL DATA BSP16T1 SOT-223 Package High Voltage Transistor PNP Silicon Motorola Preferred Device COLLECTOR 2,4 SOT–223 PACKAGE PNP SILICON HIGH VOLTAGE TRANSISTOR SURFACE MOUNT BASE 1 EMITTER 3	Original	BSP16T1/D BSP16T1 OT-223 BSP16T1/D* BSP16T1 SMD310 marking Bt2	PDF
BSP16T1 Abstract: SMD310 C200C marking Bt2 Text: MOTOROLA Order this document by BSP16T1/D SEMICONDUCTOR TECHNICAL DATA BSP16T1 SOT-223 Package High Voltage Transistor PNP Silicon Motorola Preferred Device COLLECTOR 2,4 SOT–223 PACKAGE PNP SILICON HIGH VOLTAGE TRANSISTOR SURFACE MOUNT BASE 1 EMITTER 3	Original	BSP16T1/D BSP16T1 OT-223 318E-Inc. BSP16T1 SMD310 C200C marking Bt2	PDF
2sb504 Abstract: KPL 3009 2SB502 BLY34 germanium BF316A BSX12 2SD716, 2SB686 35W amplifiers bf197 acy52 Text: TRANSISTOR DATA TABLES Other Titles of Interest B P 85 International Transistor Equivalents Guide B P286 A R eferen ce G uide to Basic Electronics Terms BP287 A R eferen ce G uide to Practical Electronics Terms n TRANSISTOR DATA TABLES by Hans-Gunther Steidle	OCR Scan		PDF

Untitled Abstract: No abstract text available Text: 5SC D • û23SbOS GGQM'îlS b « S I E G 7 ^ ? - ^ 3 2 N 4033 PNP Silicon Planar Transistor SIEMENS AKTIENGESELLSCHAF 2 N 4 0 3 3 is an epitaxial PNP silicon planar transistor in TO 3 9 case 5 C 3 DIN 41 8 7 3 . The collector is electrically connected to the case. The transistor is particularly intended for	OCR Scan	23SbOS	PDF
transistor NEC B 617 Abstract: nec 2035 744 zo 607 p 408 7749 transistor 2sc5010 ic 151 811 transistor 3568 Text: DATA SHEET NEC SILICON TRANSISTOR 2SC5010 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION The 2SC5010 is an NPN epitaxial silicon transistor designed for use in low noise and small signal am plifiers from VHF band to L band. Low noise figure, high gain, and high current capability achieve a very w ide dynam ic range and	OCR Scan	2SC5010 2SC5010 transistor NEC B 617 nec 2035 744 zo 607 p 408 7749 transistor ic 151 811 transistor 3568	PDF
30n20 Abstract: No abstract text available Text: Philips Semiconductors Product specification TrenchMOS transistor Standard level FET GENERAL DESCRIPTION N-channel enhancement mode standard level field-effect power transistor in a plastic envelope using 'trench' technology. The device features very low on-state resistance	OCR Scan	T0220AB BUK7514-55 30n20	PDF
Untitled Abstract: No abstract text available Text: Philips Semiconductors Product specification NPN switching transistor PMST2369 FEATURES DESCRIPTION • S-mini package NPN transistor in a plastic SOT323 S-mini package. • High speed switching. APPLICATIONS It is intended for high speed switching applications.	OCR Scan	PMST2369 OT323 OT323)	PDF
MAR 544 MOSFET TRANSISTOR Abstract: J 6920 FET MAR 740 MOSFET TRANSISTOR LA 7814 RD70HVF 7907 mitsubishi RD70HVF1 7386 mos transistor d 2689 MOSFET 2095 transistor Text: ATTENTION OBSERVE PRECAUTIONS FOR HANDLING Revision date:4th/Mar/02 MITSUBISHI RF POWER MOS FET ELHTROSTATIC SENSITIVE DEVICES RD70HVF1 Silicon MOSFET Power Transistor,! 75MHz70W 520MHz50W DESCRIPTION OUTLINE DRAWING RD70HVF1 is a MOS FET type transistor specifically	OCR Scan	4th/Mar/02 RD70HVF1 75MHz70W 520MHz50W RD70HVF1 175MHz 520MHz MAR 544 MOSFET TRANSISTOR J 6920 FET MAR 740 MOSFET TRANSISTOR LA 7814 RD70HVF 7907 mitsubishi 7386 mos transistor d 2689 MOSFET 2095 transistor	PDF
Untitled Abstract: No abstract text available Text: Transistors General Purpose Transistor Isolated Dual Transistors IMT17 •Features 1) Two 2SA1036K chips in a SMT package. 2) Mounting possible with SMT3 au tomatic mounting machine. 3) Transistor elements are indepen dent, eliminating interference.	OCR Scan	IMT17 2SA1036K -500m JMT17	PDF
2N2222A 338 Abstract: TFK 949 2N1167 halbleiter index transistor ad161 BSY19 al103 ac128 TFK 404 Tfk 931 Text: Towers' International Transistor Selector Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U p date One London: NEW YORK	OCR Scan	2CY17 2CY18 2CY19 2CY20 2CY21 500MA 500MA 2N2222A 338 TFK 949 2N1167 halbleiter index transistor ad161 BSY19 al103 ac128 TFK 404 Tfk 931	PDF
Untitled Abstract: No abstract text available Text: Philips Semiconductors Product specification TrenchMOS transistor Standard level FET GENERAL DESCRIPTION N-channel enhancement mode standard level field-effect power transistor in a plastic envelope using ’trench’ technology. The device features very low on-state resistance	OCR Scan	BUK7514-55 T0220AB	PDF
transistor sd 965 Abstract: No abstract text available Text: Philips Semiconductors Product specification TrenchMOS transistor Standard ievel FET GENERAL DESCRIPTION N-channel enhancement mode standard level field-effect power transistor in a plastic envelope using ’trench’ technology. The device features very low on-state resistance	OCR Scan	BUK7528-55 T0220AB transistor sd 965	PDF
sot-223 body marking D K Q F Abstract: No abstract text available Text: MOTOROLA Order this document by PZTA92T1/D SEMICONDUCTOR TECHNICAL DATA High Voltage Transistor P N P PZTA92T1 S iliC O n COLLECTOR2,4 Motorola Preferred Device SOT-223 PACKAGE PNP SILICON HIGH VOLTAGE TRANSISTOR SURFACE MOUNT MAXIMUM RATINGS Rating Symbol	OCR Scan	PZTA92T1/D PZTA92T1 OT-223 sot-223 body marking D K Q F	PDF

TRANSISTOR 965 Search Results

TRANSISTOR 965 Result Highlights (5)

TRANSISTOR 965 Datasheets Context Search

JAPAN transistor

transistor

nec 2401 831

SILICON NPN TRANSISTOR EPITAXIAL PLANAR TYPE

dual npn 500ma

BSP16T1

transistor A 564

marking DF

Untitled

Untitled

Untitled

BSP16T1

BSP16T1

2sb504

Untitled

transistor NEC B 617

30n20

Untitled

MAR 544 MOSFET TRANSISTOR

Untitled

2N2222A 338

Untitled

transistor sd 965

sot-223 body marking D K Q F