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    TRANSISTOR A 933 Search Results

    TRANSISTOR A 933 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR A 933 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    BFQ34

    Abstract: transistor marking N1 BFQ34/01,112
    Text: DISCRETE SEMICONDUCTORS DATA SHEET BFQ34 NPN 4 GHz wideband transistor Product specification File under Discrete Semiconductors, SC14 September 1995 Philips Semiconductors Product specification NPN 4 GHz wideband transistor DESCRIPTION BFQ34 PINNING NPN transistor encapsulated in a 4


    Original     		BFQ34 OT122A BFQ34/01 BFQ34/01 OT122 BFQ34 transistor marking N1 BFQ34/01,112 PDF

    2SC5006

    Abstract: 2SC5006-T1 "Small Signal Amplifiers" P1038 TD-2399
    Text: DATA SHEET SILICON TRANSISTOR 2SC5006 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION The 2SC5006 is an NPN epitaxial silicon transistor designed for use in low noise and small signal amplifiers from VHF band to UHF band. Low noise figure, high gain, and high current capability achieve a very wide dynamic range


    Original     		2SC5006 2SC5006 2SC5006-T1 "Small Signal Amplifiers" P1038 TD-2399 PDF

    ignition coil bu941

    Abstract: HIGH ENERGY IGNITION CIRCUIT COIL IGNITION 93334L-S08-R ignition block diagram transistor bu941 A350V BU941 93334-S08-R 93334-S08-T
    Text: UNISONIC TECHNOLOGIES CO., LTD 93334 LINEAR INTEGRATED CIRCUIT HIGH ENERGY IGNITION CIRCUIT DESCRIPTION This device is designed to use the signal from a reluctor type ignition pickup to produce a well controlled output from a power darlington output transistor.


    Original     		93334L 93334-S08-R 93334L-S08-R 93334-St QW-R121-006 ignition coil bu941 HIGH ENERGY IGNITION CIRCUIT COIL IGNITION 93334L-S08-R ignition block diagram transistor bu941 A350V BU941 93334-S08-R 93334-S08-T PDF

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 93334 LINEAR INTEGRATED CIRCUIT HIGH ENERGY IGNITION CIRCUIT  DESCRIPTION This device is designed to use the signal from a reluctor type ignition pickup to produce a well controlled output from a power darlington output transistor.


    Original     		93334G-S08-R QW-R121-006 PDF

    HIGH ENERGY IGNITION CIRCUIT

    Abstract: ignition block diagram R0435 COIL IGNITION 93334L-S08-R 93334-S08-R 93334-S08-T
    Text: UNISONIC TECHNOLOGIES CO., LTD 93334 LINEAR INTEGRATED CIRCUIT HIGH ENERGY IGNITION CIRCUIT „ DESCRIPTION This device is designed to use the signal from a reluctor type ignition pickup to produce a well controlled output from a power darlington output transistor.


    Original     		93334L 93334-S08-R 93334L-S08-R QW-R121-006 HIGH ENERGY IGNITION CIRCUIT ignition block diagram R0435 COIL IGNITION 93334L-S08-R 93334-S08-R 93334-S08-T PDF

    HIGH ENERGY IGNITION CIRCUIT

    Abstract: ignition coil ignition block diagram COIL IGNITION ignition DRIVE R0435 93334-S08-T 93334L-S08-R 93334-S08-R darlington type transistor in ignition
    Text: UNISONIC TECHNOLOGIES CO., LTD 93334 LINEAR INTEGRATED CIRCUIT HIGH ENERGY IGNITION CIRCUIT „ DESCRIPTION This device is designed to use the signal from a reluctor type ignition pickup to produce a well controlled output from a power darlington output transistor.


    Original     		93334L 93334-S08-R 93334L-S08-R 9333t QW-R121-006 HIGH ENERGY IGNITION CIRCUIT ignition coil ignition block diagram COIL IGNITION ignition DRIVE R0435 93334-S08-T 93334L-S08-R 93334-S08-R darlington type transistor in ignition PDF

    NEC NF 932

    Abstract: ZO 103 MA 75 623 2SC5009 2SC5009-T1 TD-2430 power transistor 3055
    Text: DATA SHEET SILICON TRANSISTOR 2SC5009 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION PACKAGE DIMENSIONS in milimeters noise figure, high gain, and high current capability achieve a very wide 1.6± 0.1 0.8± 0.1 dynamic range and excellent linearity. This is achieved by direct nitride


    Original     		2SC5009 2SC5009 NEC NF 932 ZO 103 MA 75 623 2SC5009-T1 TD-2430 power transistor 3055 PDF

    kf 8715

    Abstract: fiber optic FM Modulator gilbert cell sum RF TRANSISTOR 10GHZ FM Modulator 2GHz rf digital modulators ic 50E08 stub tuner matching 500E HFA3101
    Text: HFA3101 S E M I C O N D U C T O R Gilbert Cell UHF Transistor Array July 1995 Features Description • High Gain Bandwidth Product fT . . . . . . . . . . . 10GHz The HFA3101 is an all NPN transistor array configured as a Multiplier Cell. Based on Harris bonded wafer UHF-1 SOI


    Original     		HFA3101 10GHz HFA3101 10GHz) 390nH 825MHz 900MHz 75MHz 76MHz kf 8715 fiber optic FM Modulator gilbert cell sum RF TRANSISTOR 10GHZ FM Modulator 2GHz rf digital modulators ic 50E08 stub tuner matching 500E PDF

    2sb504

    Abstract: KPL 3009 2SB502 BLY34 germanium BF316A BSX12 2SD716, 2SB686 35W amplifiers bf197 acy52
    Text: TRANSISTOR DATA TABLES Other Titles of Interest B P 85 International Transistor Equivalents Guide B P286 A R eferen ce G uide to Basic Electronics Terms BP287 A R eferen ce G uide to Practical Electronics Terms n TRANSISTOR DATA TABLES by Hans-Gunther Steidle


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    Untitled

    Abstract: No abstract text available
    Text: DATA SHEET NEC SILICON TRANSISTOR 2SC5006 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION The 2SC5006 is an NPN epitaxial silicon transistor designed for use in low noise and small signal amplifiers from VHF band to UHF band. Low noise figure, high gain, and high current capability achieve a very wide dynamic range


    OCR Scan     		2SC5006 2SC5006 PDF

    transistor 2sc 1586

    Abstract: B 660 TG TRANSISTOR 2Sc 2525 L 3705 2sc 1364 transistor
    Text: DATA SHEET NEC SILICON TRANSISTOR 2SC5006 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION The 2SC5006 is an NPN epitaxial silicon transistor designed for use in low noise and small signal am plifiers from VHF band to UHF band. Low noise figure, high gain, and high current capability achieve a very w ide dynam ic range


    OCR Scan     		2SC5006 2SC5006 transistor 2sc 1586 B 660 TG TRANSISTOR 2Sc 2525 L 3705 2sc 1364 transistor PDF

    BUK854800A

    Abstract: Bipolar Transistor IGBT buk854-800a BUK854
    Text: Philips Semiconductors Product Specification Insulated Gate Bipolar Transistor IGBT GENERAL DESCRIPTION Fast-switching N-channel insulated gate bipolar power transistor in a plastic envelope. The device is intended for use in motor control, DC/DC and AC/DC


    OCR Scan     		BUK854-800A T0220AB accor00 BUK854800A Bipolar Transistor IGBT buk854-800a BUK854 PDF

    Bipolar Transistor IGBT

    Abstract: No abstract text available
    Text: Philips Semiconductors Product Specification Insulated Gate Bipolar Transistor IGBT GENERAL DESCRIPTION Fast-switching N-channel insulated gate bipolar power transistor in a plastic envelope. The device is intended for use in motor control, DC/DC and AC/DC


    OCR Scan     		BUK854-800A T0220AB Bipolar Transistor IGBT PDF

    MPS6547

    Abstract: 933 TRANSISTOR
    Text: MPS6547 silicon NPN SILICON RF A M PLIFIER TRANSISTOR NPN SILICON ANNULAR RF A M PLIFIER TRANSISTOR . . . designed for use in RF am plifier applications. • Collector-Em itter Breakdown Voltage — • High-Current-Gain—Bandwidth Product — f f = 100 0 M H z (T yp ) @ I q ~ 2 .0 mAdc


    OCR Scan     		MPS6547 MPS6547 933 TRANSISTOR PDF

    BFR96

    Abstract: BFR96 philips BFR96 LOW POWER TRANSISTOR for transistor bfr96 BFQ32 4 20 mA 1992 transistor bfr96 philips bfq32 BFR96$ a 933 transistor
    Text: Philips Sem iconductors Product specification ^ NPN 5 GHz wideband transistor DESCRIPTION VllDfiEb D04577b lfl7 « P H I N SbE D PHILIPS INTERNA TIONAL BFR96 PINNING NPN transistor in a plastic SOT37 envelope primarily intended for use in RF wideband amplifiers such as


    OCR Scan     		BFR96 DD4S77b ON4487) BFQ32. coll801 711082b BFR96 philips BFR96 LOW POWER TRANSISTOR for transistor bfr96 BFQ32 4 20 mA 1992 transistor bfr96 philips bfq32 BFR96$ a 933 transistor PDF

    BLX91A

    Abstract: BLX91 J 3305 transistor 936 transistor 931 D057 G027 IEC134 transistor 3305
    Text: PHI L IP S IN TE R N A T I O N A L MAINTENANCE TYPE MIE J> 7 1 10 â 2 b 0 0 27 0 2 3 □ B i PHIN B LX 91A . m T '3 3 'O S U.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor intended for transmitting applications in class-A, B or C w ith a


    OCR Scan     		BLX91A. T-33-OS 28ency June1976 BLX91A BLX91 J 3305 transistor 936 transistor 931 D057 G027 IEC134 transistor 3305 PDF

    A 933 S transistors

    Abstract: No abstract text available
    Text: Transistors General Purpose Transistor -50V, 0.15A 2 S A 1037 A K / 2 S A 1576 A / 2 S A 1774 / 2 S A 933 A S • Features 1 ) Excellent I i f e linearity. 2) Complements the 2SC2412K/ 2SC4081 /2SC4617 / 2SC1740S. •E x te rn a l dimensions (Units: mm)


    OCR Scan     		2SC2412K/ 2SC4081 /2SC4617 2SC1740S. 2SA1037AK 2SA1576A SC-59 SC-70 2SA933AS A 933 S transistors PDF

    BFR96

    Abstract: BFR96 philips Transistor 933 Transistor s44 transistor bfr96 transistorbfr96
    Text: Philips Semiconductors Product specification - 3 /- . Z 3 NPN 5 GHz wideband transistor DESCRIPTION 711002b 004577b 1A7 • P H I N 5bE D PHILIPS INTERNATIONAL BFR96 PINNING NPN transistor in a plastic SOT37 envelope primarily intended for use in RF wideband amplifiers such as


    OCR Scan     		ON4487) BFQ32. BFR96 711DflSb r-31-23 711Dfl2b BFR96 BFR96 philips Transistor 933 Transistor s44 transistor bfr96 transistorbfr96 PDF

    transistor bfr96

    Abstract: BFR96 philips BFR96 BFR96 LOW POWER TRANSISTOR for transistor bfr96 BFR96 TRANSISTOR a 933 transistor BFR96 pins resistance BFQ32 Transistor 933
    Text: ^ 5 3 ^ 3 1 Philips Semiconductors 0031ÛÔ7 b fll M APX Product specification BFR96 NPN 5 GHz wideband transistor N AMER PHILIPS/DISCRETE DESCRIPTION □TE D PINNING NPN transistor in a plastic SOT37 envelope primarily intended for use in RF wideband amplifiers such as


    OCR Scan     		bbS3131 BFR96 ON4487) BFQ32. transistor bfr96 BFR96 philips BFR96 BFR96 LOW POWER TRANSISTOR for transistor bfr96 BFR96 TRANSISTOR a 933 transistor BFR96 pins resistance BFQ32 Transistor 933 PDF

    IC HXJ 2038

    Abstract: 1N52398 DB5T tfk 102 cny 70 hxj 2038 rca 40361 transistor rca 40362 TFK 680 CNY 70 Diode Equivalent 1N34A 2n5952 equivalent
    Text: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY


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    LG color tv Circuit Diagram schematics

    Abstract: free transistor equivalent book 2sc NPN TRANSISTORS LIST ACCORDING TO CURRENT, VOLTAG RCA SK CROSS-REFERENCE KIA 4318 transistor cs 9012 Til 322A sx3704 diode d.a.t.a. book 1N1007
    Text: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY


    OCR Scan     		3186J LG color tv Circuit Diagram schematics free transistor equivalent book 2sc NPN TRANSISTORS LIST ACCORDING TO CURRENT, VOLTAG RCA SK CROSS-REFERENCE KIA 4318 transistor cs 9012 Til 322A sx3704 diode d.a.t.a. book 1N1007 PDF

    1N6227

    Abstract: silec GG 84 1n623 2G300 chn 543 IC HXJ 2038 1N52398 IN5240 1n48 zener diode
    Text: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY


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    transistor bfr96

    Abstract: SL 100 NPN Transistor BFR96 BFR96 LOW POWER TRANSISTOR transistor 936 M8B916 BFR96 pins resistance BFR96 TRANSISTOR BFQ32 a 933 transistor
    Text: Philips Sem iconductors Product specification ^ NPN 5 GHz wideband transistor PHILIPS DESCRIPTION 711DÔ2t> 0 0 4 5 7 7 b Sfc.E D INTERNATIONAL BFR96 lfl7 « P H I N PINNING NPN transistor in a plastic SOT37 envelope primarily intended for use in RF wideband amplifiers such as


    OCR Scan     		BFR96 004577b ON4487) BFQ32. BFR96/02 0D457A2 00MS763 transistor bfr96 SL 100 NPN Transistor BFR96 BFR96 LOW POWER TRANSISTOR transistor 936 M8B916 BFR96 pins resistance BFR96 TRANSISTOR BFQ32 a 933 transistor PDF

    2SA19

    Abstract: 2SA1933 2SC5175
    Text: TOSHIBA 2SA1933 2 S A 1 933 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS HIGH CURRENT SWITCHING APPLICATIONS • INDUSTRIAL APPLICATIONS Unit in mm Low Saturation Voltage : VCE (sat)~ —0.4V (Max.) at I q = -3 A High Speed Switching Time : tgtg^l.O/^s (Typ.)


    OCR Scan     		2SA1933 2SC5175 --50V, 2SA19 2SA1933 2SC5175 PDF