|
TTC5886A
|
|
Toshiba Electronic Devices & Storage Corporation
|
NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns |
|
|
|
TTA2097
|
|
Toshiba Electronic Devices & Storage Corporation
|
PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns |
|
|
|
GRT155R61A106ME13J
|
|
Murata Manufacturing Co Ltd
|
0402 (1005M) X5R (EIA) 10Vdc 10μF±20% |
|
|
|
GRT155R61A106ME13D
|
|
Murata Manufacturing Co Ltd
|
0402 (1005M) X5R (EIA) 10Vdc 10μF±20% |
|
|
|
XPQR8308QB
|
|
Toshiba Electronic Devices & Storage Corporation
|
N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL |
|
|
