A2093
Abstract: 2SA2093 2SC5880
Text: 2SA2093 Transistors Power transistor −60V, −2A 2SA2093 zFeatures 1) High speed switching. (tf : Typ. : 30ns at IC = −2A) 2) Low saturation voltage, typically (Typ. : −200mV at IC = −1.0A, IB = −0.1A) 3) Strong discharge power for inductive load and
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2SA2093
-200mV
2SC5880
A2093
A2093
2SA2093
2SC5880
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A2093
Abstract: 2SA2093
Text: Power transistor 60V, 2A 2SA2093 Dimensions (Unit : mm) Features 1) High speed switching. (tf : Typ. : 30ns at IC = 2A) 2) Low saturation voltage, typically (Typ. : 200mV at IC = 1.0A, IB = 0.1A) 3) Strong discharge power for inductive load and
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2SA2093
200mV
2SC5880
A2093
R1120A
A2093
2SA2093
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transistor A2097
Abstract: 2SA2097 A2097
Text: 2SA2097 TOSHIBA Transistor Silicon PNP Epitaxial Type 2SA2097 High-Speed Swtching Applications DC-DC Converter Applications Unit: mm • High DC current gain: hFE = 200 to 500 IC = −0.5 A • Low collector-emitter saturation: VCE (sat) = −0.27 V (max)
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2SA2097
transistor A2097
2SA2097
A2097
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transistor A2097
Abstract: No abstract text available
Text: 2SA2097 TOSHIBA Transistor Silicon PNP Epitaxial Type 2SA2097 High-Speed Swtching Applications DC-DC Converter Applications Unit: mm • High DC current gain: hFE = 200 to 500 IC = −0.5 A • Low collector-emitter saturation: VCE (sat) = −0.27 V (max)
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2SA2097
transistor A2097
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2SA2097
Abstract: transistor pnp a110
Text: 2SA2097 TOSHIBA Transistor Silicon PNP Epitaxial Type 2SA2097 High-Speed Swtching Applications DC-DC Converter Applications Unit: mm • High DC current gain: hFE = 200 to 500 IC = −0.5 A • Low collector-emitter saturation: VCE (sat) = −0.27 V (max)
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2SA2097
2SA2097
transistor pnp a110
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A2097
Abstract: transistor A2097 2SA2097
Text: 2SA2097 TOSHIBA Transistor Silicon PNP Epitaxial Type 2SA2097 High-Speed Swtching Applications DC-DC Converter Applications Unit: mm • High DC current gain: hFE = 200 to 500 IC = −0.5 A · Low collector-emitter saturation: VCE (sat) = −0.27 V (max)
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2SA2097
SC-64
A2097
transistor A2097
2SA2097
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transistor A2097
Abstract: A2097 2SA2097 2SA20 transistor 2SA2097
Text: 2SA2097 TOSHIBA Transistor Silicon PNP Epitaxial Type 2SA2097 High-Speed Swtching Applications DC-DC Converter Applications Unit: mm • High DC current gain: hFE = 200 to 500 IC = −0.5 A • Low collector-emitter saturation: VCE (sat) = −0.27 V (max)
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2SA2097
SC-64
transistor A2097
A2097
2SA2097
2SA20
transistor 2SA2097
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transistor A2097
Abstract: A2097 2SA2097
Text: 2SA2097 TOSHIBA Transistor Silicon PNP Epitaxial Type 2SA2097 High-Speed Swtching Applications DC-DC Converter Applications Unit: mm • High DC current gain: hFE = 200 to 500 IC = −0.5 A • Low collector-emitter saturation: VCE (sat) = −0.27 V (max)
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2SA2097
transistor A2097
A2097
2SA2097
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transistor A2097
Abstract: No abstract text available
Text: 2SA2097 TOSHIBA Transistor Silicon PNP Epitaxial Type 2SA2097 High-Speed Swtching Applications DC-DC Converter Applications Unit: mm • High DC current gain: hFE = 200 to 500 IC = −0.5 A • Low collector-emitter saturation: VCE (sat) = −0.27 V (max)
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2SA2097
SC-64
transistor A2097
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Untitled
Abstract: No abstract text available
Text: 2SA2097 TOSHIBA Transistor Silicon PNP Epitaxial Type 2SA2097 High-Speed Swtching Applications DC-DC Converter Applications Unit: mm • High DC current gain: hFE = 200 to 500 IC = −0.5 A • Low collector-emitter saturation: VCE (sat) = −0.27 V (max)
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2SA2097
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A2093
Abstract: 2SA2093 2SC5880
Text: 2SA2093 Transistors Power transistor −60V, −2A 2SA2093 !External dimensions (Unit : mm) ATV 2.5 1.0 0.65Max. 0.5 4.4 0.9 6.8 14.5 !Features 1) High speed switching. (Tf : Typ. : 30ns at IC = −2A) 2) Low saturation voltage, typically (Typ. : −200mV at IC = −1.0A, IB = −0.1A)
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2SA2093
65Max.
-200mV
2SC5880
A2093
A2093
2SA2093
2SC5880
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A2093
Abstract: 2SA2093 2SC5880
Text: 2SA2093 Transistors Power transistor −60V, −2A 2SA2093 !External dimensions (Unit : mm) ATV 2.5 1.0 0.65Max. 0.5 4.4 0.9 6.8 14.5 !Features 1) High speed switching. (Tf : Typ. : 30ns at IC = −2A) 2) Low saturation voltage, typically (Typ. : −200mV at IC = −1.0A, IB = −0.1A)
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2SA2093
65Max.
-200mV
2SC5880
A2093
A2093
2SA2093
2SC5880
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2SC5879S
Abstract: 2sc5879 2SA2091S SC-72 a2091
Text: 2SA2091S Transistors Medium power transistor −60V, −1A 2SA2091S !External dimensions (Unit : mm) SPT (SC-72) 2.0 3Min. 3.0 4.0 (15Min.) !Features 1) High speed switching. (Tf : Typ. : 30ns at IC = −1A) 2) Low saturation voltage, typically (Typ. : −200mV at IC = −0.5A, IB = −50mA)
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2SA2091S
SC-72)
15Min.
-200mV
-50mA)
2SC5879S
A2091S
2SC5879S
2sc5879
2SA2091S
SC-72
a2091
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transistor bc 245
Abstract: 247Y smd transistor h2a gt30g122 gt35j321 GT45F123 MARKING SMD PNP TRANSISTOR h2a GT45F122 GT45f122 Series gt30f122
Text: Transistors Bipolar Small-Signal Transistors z 190 Small-Signal FETs z 205 Combination Products of Different Type Devices z 215 Bipolar Power Transistors z 217 Power MOSFETs z 232 Power Transistor Modules z 242 Radio-Frequency Bipolar Small-Signal Transistors z 243
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SC-43)
2SC1815
TPS615
TPS616
TPS610
transistor bc 245
247Y
smd transistor h2a
gt30g122
gt35j321
GT45F123
MARKING SMD PNP TRANSISTOR h2a
GT45F122
GT45f122 Series
gt30f122
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Untitled
Abstract: No abstract text available
Text: 2SA2096 Transistors Power transistor −60V, −5A 2SA2096 !External dimensions (Unit : mm) 0.75 5.5 1.5 5.1 (2) (3) 0.9 0.5 0.8Min. 1.5 2.5 9.5 2.3 C0.5 0.65 2.3 (1) Base (2) Collector (3) Emitter 6.5 2.3 (1) (SC-63) <SOT-428> 0.9 CPT3 1.0 0.5 !Features
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2SA2096
SC-63)
OT-428>
200mV
2SC5881
A2096
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2sa2097
Abstract: transistor A2097 A2097
Text: 2SA2097 TOSHIBA Transistor Silicon PNP Epitaxial Type 2SA2097 High-Speed Swtching Applications DC-DC Converter Applications • • • Unit: mm High DC current gain: h FE = 200 to 500 I C = −0.5 A Low collector-emitter saturation: V CE (sat) = −0.27 V (max)
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2SA2097
2sa2097
transistor A2097
A2097
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A2096
Abstract: 2SA2096 2SC5881
Text: 2SA2096 Transistors Power transistor −60V, −5A 2SA2096 zExternal dimensions (Unit : mm) 0.75 5.5 1.5 5.1 (2) (3) 0.9 0.5 0.8Min. 1.5 2.5 9.5 2.3 C0.5 0.65 2.3 (1) Base (2) Collector (3) Emitter 6.5 2.3 (1) (SC-63) <SOT-428> 0.9 CPT3 1.0 0.5 zFeatures
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2SA2096
SC-63)
OT-428>
-200mV
2SC5881
A2096
A2096
2SA2096
2SC5881
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a2096
Abstract: 2SA2096 2SC5881
Text: 2SA2096 Transistors Power transistor −60V, −5A 2SA2096 !External dimensions (Unit : mm) 0.75 5.5 1.5 5.1 (2) (3) 0.9 0.5 0.8Min. 1.5 2.5 9.5 2.3 C0.5 0.65 2.3 (1) Base (2) Collector (3) Emitter 6.5 2.3 (1) (SC-63) <SOT-428> 0.9 CPT3 1.0 0.5 !Features
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2SA2096
SC-63)
OT-428>
-200mV
2SC5881
A2096
a2096
2SA2096
2SC5881
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GT30F131
Abstract: GT30F124 TK18A60V smd m5 transistor 6-pin SMD TRANSISTOR H2A NPN GT50N322 MARKING SMD PNP TRANSISTOR h2a GT30J124 *30f124 TPCP8R01
Text: SEMICONDUCTOR GENERAL CATALOG Transistors Bipolar Small-Signal Transistors Junction FETs Combination Products of Different Type Devices MOSFETs Bipolar Power Transistors Radio-Frequency Bipolar Small-Signal Transistors Radio-Frequency Small-Signal FETs Radio-Frequency Power MOSFETs
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SCE0004L
TTC4116*
2SC4118
TTA1586*
2SA1588
2SC4117
2SA1587
2SC5233
2SC4738
2SA1832
GT30F131
GT30F124
TK18A60V
smd m5 transistor 6-pin
SMD TRANSISTOR H2A NPN
GT50N322
MARKING SMD PNP TRANSISTOR h2a
GT30J124
*30f124
TPCP8R01
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GT30J124
Abstract: smd transistor h2a gt45f122 TPCP8R01 GT30F123 2sc1815 smd type smd marking 8L01 h2a smd 2SC5471 2sc5200 amplifiers circuit diagram
Text: SEMICONDUCTOR GENERAL CATALOG Transistors Bipolar Small-Signal Transistors Junction FETs Combination Products of Different Type Devices MOSFETs Bipolar Power Transistors Radio-Frequency Bipolar Small-Signal Transistors Radio-Frequency Small-Signal FETs Radio-Frequency Power MOSFETs
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SCE0004I
SC-43)
2SC1815
GT30J124
smd transistor h2a
gt45f122
TPCP8R01
GT30F123
2sc1815 smd type
smd marking 8L01
h2a smd
2SC5471
2sc5200 amplifiers circuit diagram
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GT30F124
Abstract: TPCP8R01 GT30J124 JAPANESE 2SC TRANSISTOR 2010 smd transistor h2a smd marking 8L01 tk25e06k3 GT45F122 gt30g124 GT30F123
Text: SEMICONDUCTOR GENERAL CATALOG Transistors Bipolar Small-Signal Transistors Junction FETs Combination Products of Different Type Devices MOSFETs Bipolar Power Transistors Radio-Frequency Bipolar Small-Signal Transistors Radio-Frequency Small-Signal FETs Radio-Frequency Power MOSFETs
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2010/9SCE0004K
SC-43)
2SC1815
700the
GT30F124
TPCP8R01
GT30J124
JAPANESE 2SC TRANSISTOR 2010
smd transistor h2a
smd marking 8L01
tk25e06k3
GT45F122
gt30g124
GT30F123
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1N4148 SOD-123
Abstract: conn SIL2 tp1 conn sil2 4-pole bldc sensorless 12v dc brushless motor Infineon - Brushless DC Motor 24v dc motor drive circuit diagram SPEED CONTROL of DC MOTOR using 3 phase bridge co dc motor driver MANUAL 3 phase ac Induction motor h bridge dc motor speed control HISTORY
Text: User’s Manual, V 1.0, June 2003 Motor Control Development Kit A reference design for low voltage 3-phase AC induction and brushless DC motor control. Microcontrollers N e v e r s t o p t h i n k i n g . Motor Control Development Kit Revision History:2003-06 V 1.0
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upload/documents/048/247/
TLE6280GP
upload/documents/014/220/TLE6280GP
feeTLE4274GS
P-SOT223-4-1
LM6132AIM
P-DSO36-12
MAX3221E
TSSOP16
1N4148 SOD-123
conn SIL2
tp1 conn sil2
4-pole bldc sensorless 12v dc brushless motor
Infineon - Brushless DC Motor
24v dc motor drive circuit diagram
SPEED CONTROL of DC MOTOR using 3 phase bridge co
dc motor driver MANUAL
3 phase ac Induction motor h bridge
dc motor speed control HISTORY
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mdu 2653
Abstract: mdu 2654 BGA1152 transistor Arm 3055 equivalent Gigablaze serdes CMOS h27 j1 3003 RC1800 A207 resistor R10 J 2995 FC1152
Text: DATASHEET RapidChip Integrator Platform ASIC Family February 2005 Preliminary DB08-000237-03 This document is preliminary. As such, it contains data derived from functional simulations and performance estimates. LSI Logic has not verified either the
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DB08-000237-03
DB08-000237-03,
1152-Ball
mdu 2653
mdu 2654
BGA1152
transistor Arm 3055 equivalent
Gigablaze serdes CMOS
h27 j1 3003
RC1800
A207
resistor R10 J 2995
FC1152
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MIC710
Abstract: XC6875 MC1741L C4558C SG425 mc7724c NE533V General Instrument data book 741p SN75107
Text: Master Index and Cross Reference Guide M IL-M -38510 Program and Chip Information Operational Amplifiers Voltage Regulators Interface Circuits Voltage Comparators Consumer Circuits Other Linear Circuits Package Information and Mounting Hardware Application Notes
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OCR Scan
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PDF
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110-E77-20.
MIC710
XC6875
MC1741L
C4558C
SG425
mc7724c
NE533V
General Instrument data book
741p
SN75107
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