fp104
Abstract: No abstract text available
Text: Ordering number:EN4655 FP104 TR:PNP Epitaxial Planar Silicon Transistor SBD:Schottky Barrier Diode DC-DC Converter Applications Features Package Dimensions • Composite type with 2devices PNP transistor and Shottky barrier diode contained in one package,
|
Original
|
EN4655
FP104
FP104
2SA1729
SB05-05CP
FP104]
|
PDF
|
marking EB 202 diode
Abstract: 2SA1729 FP104 SB05-05CP marking EB 202 transistor EN4655
Text: Ordering number:EN4655 FP104 TR:PNP Epitaxial Planar Silicon Transistor SBD:Schottky Barrier Diode DC-DC Converter Applications Features Package Dimensions • Composite type with 2devices PNP transistor and Shottky barrier diode contained in one package,
|
Original
|
EN4655
FP104
FP104
2SA1729
SB05-05CP
FP104]
marking EB 202 diode
marking EB 202 transistor
EN4655
|
PDF
|
2SB1122
Abstract: 2SD1622 FP203 2SB1122 equivalent
Text: Ordering number:EN4496 FP203 PNP/NPN Epitaxial Planar Silicon Transistors Push-Pull Circuits Features Package Dimensions • Composite type with 2 transistors of PNP transistor and NPN transistor,facilitating high-density mounting. · The FP203 is formed with chips, being equivalent to
|
Original
|
EN4496
FP203
FP203
2SB1122
2SD1622,
FP203]
2SD1622
2SB1122 equivalent
|
PDF
|
marking 212
Abstract: 2SA1370 2SC3467 FP212 44974
Text: Ordering number:EN4497 FP212 PNP/NPN Epitaxial Planar Silicon Transistors High-Voltage Driver Applications Features Package Dimensions • Composite type with a PNP transistor and an NPN transistor, in one package, facilitating high-density mounting. · The FP212 is composed of 2 chips, one being
|
Original
|
EN4497
FP212
FP212
2SA1370
2SC3467,
FP212]
marking 212
2SC3467
44974
|
PDF
|
2097a
Abstract: 2SB1123 2SD1623 FP204 EN4493 marking 204
Text: Ordering number:EN4493 FP204 PNP/NPN Epitaxial Planar Silicon Transistors Push-Pull Circuit Applications Features Package Dimensions • Composite type with a PNP transistor and an NPN transistor in one package, facilitating high-density mounting. · The FP204 is composed of 2 chips, one being
|
Original
|
EN4493
FP204
FP204
2SB1123
2SD1623,
FP204]
2097a
2SD1623
EN4493
marking 204
|
PDF
|
EN4494
Abstract: 2SA1416 2SC3646 FP205 marking 205
Text: Ordering number:EN4494 FP205 PNP/NPN Epitaxial Planar Silicon Transistors Push-Pull Circuit Applications Features Package Dimensions • Composite type with a PNP transistor and an NPN transistor in one package, facilitating high-density mounting. · The FP205 is composed of 2 chips, one being
|
Original
|
EN4494
FP205
FP205
2SA1416
2SC3646,
FP205]
EN4494
2SC3646
marking 205
|
PDF
|
2SA1370
Abstract: 2SC3467 FP212
Text: Ordering number:EN4497 FP212 PNP/NPN Epitaxial Planar Silicon Transistors High-Voltage Driver Applications Features Package Dimensions • Composite type with a PNP transistor and an NPN transistor, in one package, facilitating high-density mounting. · The FP212 is composed of 2 chips, one being
|
Original
|
EN4497
FP212
FP212
2SA1370
2SC3467,
FP212]
2SC3467
|
PDF
|
2SC4987
Abstract: ITR07808 ITR07809 ITR07810 ITR07811 ITR07812
Text: Ordering number:ENN4723 NPN Epitaxial Planar Silicon Transistor 2SC4987 High-Speed Switching Applications Features Package Dimensions • High-speed switching. · Low collector saturation voltage. · High gain-bandwidth product. · Small collector capacitance.
|
Original
|
ENN4723
2SC4987
2SC4987]
2SC4987
ITR07808
ITR07809
ITR07810
ITR07811
ITR07812
|
PDF
|
9412 transistor
Abstract: 2SA1881 2SC4983 transistor 9412 2SC498
Text: Ordering number:4661 PNP/NPN Epitaxial Planar Silicon Transistor 2SA1881/2SC4983 Low-Frequency General-Purpose Amplifier Applications Features Package Dimensions • AF power amplifier, medium-speed switching, smallsized motor drivers and LED drivers. unit:mm
|
Original
|
2SA1881/2SC4983
2018B
2SA1881/2SC4983]
2SA1881/
2SC4983-appied
2SA1881
9412 transistor
2SA1881
2SC4983
transistor 9412
2SC498
|
PDF
|
marking B4
Abstract: 2SC4987 B5 SANYO
Text: Ordering number:EN4723 NPN Epitaxial Planar Silicon Transistor 2SC4987 High-Speed Switching Applications Package Dimensions • Fast switching speed. · Low collector saturation voltage. · High gain-bandwidth product. · Small collector capacitance. · Very small-sized package permitting 2SC4987applied sets to be made small and slim.
|
Original
|
EN4723
2SC4987
2SC4987applied
2SC4987]
40Ltd.
marking B4
2SC4987
B5 SANYO
|
PDF
|
c5088 transistor
Abstract: transistor C3207 TLO84CN sec c5088 IN5355B D2817A C3207 transistor toshiba f630 TLO81CP MC74HC533N
Text: Transistor - Diode Cross Reference - H.P. Part Numbers to JEDEC Numbers Part Num. 1820-0225 1820-0240 1820-0352 1820-1804 1821-0001 1821-0002 1821-0006 1850-0062 1850-0064 1850-0075 1850-0076 1850-0093 1850-0099 1850-0126 1850-0137 1850-0150 1850-0151 1850-0154
|
Original
|
1853IMPATT
c5088 transistor
transistor C3207
TLO84CN
sec c5088
IN5355B
D2817A
C3207 transistor
toshiba f630
TLO81CP
MC74HC533N
|
PDF
|
CA89
Abstract: SMA89 transistor A89
Text: A89/SMA89 100 TO 800 MHz CASCADABLE AMPLIFIER • HIGH REVERSE ISOLATION: >29 dB TYP. · LOW INPUT VSWR: 1.4:1 (TYP.) · HIGH LEVEL OUTPUT: +17.5 dBm (TYP.) Typical Performance @ 25°C Specifications (Rev. Date: 12/00)* Characteristics Typical Frequency Small Signal Gain (min.)
|
Original
|
A89/SMA89
SMA89
CA89
SMA89
transistor A89
|
PDF
|
STELLEX
Abstract: No abstract text available
Text: A89/SMA89 100 TO 800 MHz CASCADABLE AMPLIFIER • HIGH REVERSE ISOLATION: >29 dB TYP. · LOW INPUT VSWR: 1.4:1 (TYP.) · HIGH LEVEL OUTPUT: +17.5 dBm (TYP.) Typical Performance @ 25°C Specifications (Rev. Date: 12/00)* Characteristics Typical Guaranteed
|
Original
|
A89/SMA89
50-ohm
STELLEX
|
PDF
|
transistor A89
Abstract: No abstract text available
Text: A89/SMA89 100 TO 800 MHz TO-8 CASCADABLE AMPLIFIER • HIGH REVERSE ISOLATION: >29 dB TYP. · LOW INPUT VSWR: 1.4:1 (TYP.) · HIGH LEVEL OUTPUT: +17.5 dBm (TYP.) Typical Performance @ 25°C Specifications (Rev. Date: 6/02)* Characteristics Typical Frequency
|
Original
|
A89/SMA89
SMA89
transistor A89
|
PDF
|
|
|
PDTA124XE
Abstract: PDTC124
Text: DISCRETE SEMICONDUCTORS PDTC124XE NPN resistor-equipped transistor Product specification Supersedes data of 1998 Sep 21 Philips Semiconductors 1999 May 18 PHILIPS PHILIPS Philips Semiconductors Product specification NPN resistor-equipped transistor PDTC124XE
|
OCR Scan
|
PDTC124XE
PDTC124XE
SC-75
OT416)
PDTA124XE.
SCA64
5002/00/03/pp8
PDTA124XE
PDTC124
|
PDF
|
2SA1370
Abstract: No abstract text available
Text: Ordering num ber: EN4497 _ FP212 No.4497 PNP/NPN Epitaxial Planar Silicon Transistors High-Voltage Driver Applications F eatu re s • Composite type with a PNP transistor and an NPN transistor, in one package, facilitating highdensity mounting.
|
OCR Scan
|
EN4497
FP212
FP212
2SA1370
2SC3467,
|
PDF
|
Untitled
Abstract: No abstract text available
Text: Ordering num ber: EN 4 4 9 6 SANYO _FP203 PNP/NPN Epitaxial Planar Silicon Transistors No.4496 i Push-Pull Circuits F eatu res • Composite type with 2 transistors of PNP transistor and NPN transistor, facilitating high-density mounting.
|
OCR Scan
|
FP203
2SB1122
2SD1622,
250mm2X0
250mm2X
|
PDF
|
marking 202
Abstract: fp104
Text: Ordering number : E N 4655 FP104 No. 4655 TR : PNP Epitaxial Planar Silicon Transistor SBD : Schottky Barrier Diode DC/DC Converter Applications F eatu res • Composite type with 2 devices PNP transistor and Schottky barrier diode contained in one package,
|
OCR Scan
|
FP104
FP104
2SA1729
SB05-05CP
250mm2
100mA
marking 202
|
PDF
|
Untitled
Abstract: No abstract text available
Text: Ordering num ber:EN4493 _ FP204 No.4493 i PNP/NPN Epitaxial Planar Silicon Transistors SAMYO i Push-Pull Circuit Applications F e a tu re s • Composite type with a PNP transistor and an NPN transistor in one package, facilitating high-density
|
OCR Scan
|
EN4493
FP204
FP204
2SB1123
2SD1623,
|
PDF
|
Untitled
Abstract: No abstract text available
Text: Ordering number: E N 4655 _ No.4655 FP104 TR : PNP Epitaxial Planar Silicon Transistor SBD : Schottky Barrier Diode DC/DC Converter Applications I F e a tu re s - Composite type with 2 devices PNP transistor and Schottky barrier diode contained in one package,
|
OCR Scan
|
FP104
FP104
2SA1729
SB05-05CP
|
PDF
|
transistor t09
Abstract: PDTC114EU
Text: Philips Semiconductors Product specification NPN resistor-equipped transistor PDTC114EU FEATURES • Built-in bias resistors R1 and R2 typ. 10 kO each H • Simplification of circuit design • Reduces number of components and board space. APPLICATIONS 13— B
|
OCR Scan
|
PDTC114EU
OT323)
OT323
PDTA114EU.
transistor t09
PDTC114EU
|
PDF
|
47Z3
Abstract: 2SC4987 1000-23 EN4723
Text: Ordering number :E N 4 72 3 SANYO _2SC4987 NPN Epitaxial Planar Silicon Transistor No.4723 i High-Speed Switching Applications F eatu res • Fast switching speed. • Low collector saturation voltage. • High gain-bandwidth product. • Small collector capacitance.
|
OCR Scan
|
EN4723
2SC4987
2SC4987-applied
47Z3
2SC4987
1000-23
EN4723
|
PDF
|
Untitled
Abstract: No abstract text available
Text: O r d e rin g n u m b e r : E N 4 4 9 4 FP205 No.4494 PN P/N PN E pitaxial P lan ar Silicon T ransistors SAXYO i Push-Pull Circuit Applications F e a tu re s • Composite type with a PN P transistor and an NPN tran sisto r in one package, facilitating high-density
|
OCR Scan
|
FP205
FP205
2SA1416
2SC3646,
|
PDF
|
TC518512FTL-70
Abstract: No abstract text available
Text: 5 2 4 ,2 8 8 W O R D S x 8 8 IT CMOS PSEUDO S T A T IC RAM PRELIMINARY D E S C R IP T IO N T he T C 5 1 8 5 1 2 P L F am ily is a 4M b it high speed CM OS Pseudo S tatic RAM organized as 5 2 4 ,2 8 8 words by 8 bits. T he T C 5 1 8 5 1 2 P L F am ily u tilizin g one transistor dynamic memory cell with CM OS
|
OCR Scan
|
TC518512PL
TC518512PL/FL/FTUTRLâ
TC518512FTL-70,
35MAX
TC518512TRL
TC518512FTL-70
|
PDF
|
