Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    TRANSISTOR A949 Search Results

    TRANSISTOR A949 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR A949 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    transistor a949

    Abstract: A949 a949 transistor A949 Y 2SA949
    Text: 2SA949 TOSHIBA Transistor Silicon PNP Triple Diffused Type 2SA949 Driver-Stage Audio Amplifier Applications High-Voltage Switching Applications • High breakdown voltage: VCEO = −150 V • Low output capacitance: Cob = 5.0 pF max • High transition frequency: fT = 120 MHz (typ.)


    Original     		PDF 2SA949 transistor a949 A949 a949 transistor A949 Y 2SA949

    transistor a949

    Abstract: A949 2SA949 A949 Y a949 transistor
    Text: 2SA949 TOSHIBA Transistor Silicon PNP Triple Diffused Type 2SA949 Driver-Stage Audio Amplifier Applications High-Voltage Switching Applications • High breakdown voltage: VCEO = −150 V • Low output capacitance: Cob = 5.0 pF max • High transition frequency: fT = 120 MHz (typ.)


    Original     		PDF 2SA949 transistor a949 A949 2SA949 A949 Y a949 transistor

    transistor a949

    Abstract: A949 2SA949
    Text: 2SA949 TOSHIBA Transistor Silicon PNP Triple Diffused Type 2SA949 Driver-Stage Audio Amplifier Applications High-Voltage Switching Applications • High breakdown voltage: VCEO = −150 V • Low output capacitance: Cob = 4.0 pF typ. • High transition frequency: fT = 120 MHz (typ.)


    Original     		PDF 2SA949 transistor a949 A949 2SA949

    transistor a949

    Abstract: A949 2SA949 a949 transistor TOSHIBA a949
    Text: 2SA949 TOSHIBA Transistor Silicon PNP Triple Diffused Type 2SA949 Driver-Stage Audio Amplifier Applications High-Voltage Switching Applications • High breakdown voltage: VCEO = −150 V • Low output capacitance: Cob = 5.0 pF max • High transition frequency: fT = 120 MHz (typ.)


    Original     		PDF 2SA949 O-92MOD transistor a949 A949 2SA949 a949 transistor TOSHIBA a949