d408
Abstract: DD 128 D transistor GG13 LT 7212 MHz-860 RA45H7687M1 RA45H7687M1-101 DD 128 transistor
Text: MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA45H7687M1 RoHS Compliance, 764-870MHz 45W 12.8V, 2 Stage Amp. For MOBILE RADIO DESCRIPTION The RA45H7687M1 is a 45-watt RF MOSFET Amplifier Module for 12.8-volt mobile radios that operate in the 764- to
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RA45H7687M1
764-870MHz
RA45H7687M1
45-watt
870-MHz
d408
DD 128 D transistor
GG13
LT 7212
MHz-860
RA45H7687M1-101
DD 128 transistor
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LT 7210
Abstract: lt 7210 datasheet 440M 470M RA60H4452M1 RA60H4452M1-101
Text: MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA60H4452M1 RoHS Compliance, 440-520MHz 60W 12.5V, 2 Stage Amp. For MOBILE RADIO DESCRIPTION The RA60H4452M1 is a 60-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 440- to
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RA60H4452M1
440-520MHz
RA60H4452M1
60-watt
520-MHz
LT 7210
lt 7210 datasheet
440M
470M
RA60H4452M1-101
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400M
Abstract: 430M 470M RA30H4047M1
Text: MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA30H4047M1 RoHS Compliance, 400-470MHz 30W 12.5V, 2 Stage Amp. For MOBILE RADIO DESCRIPTION The RA30H4047M1 is a 30-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 400- to
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RA30H4047M1
400-470MHz
RA30H4047M1
30-watt
470-MHz
400M
430M
470M
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lt 7210
Abstract: 470M RA30H4552M1 RA30H4552M1-101
Text: MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA30H4552M1 RoHS Compliance, 450-520MHz 30W 12.5V, 2 Stage Amp. For MOBILE RADIO DESCRIPTION The RA30H4552M1 is a 30-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 450- to
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RA30H4552M1
450-520MHz
RA30H4552M1
30-watt
520-MHz
lt 7210
470M
RA30H4552M1-101
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LT 7210
Abstract: 470M RA30H4552M1 RA30H4552M1-101 074c RF POWER amplifier 10 watt
Text: MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA30H4552M1 RoHS Compliance, 450-520MHz 30W 12.5V, 2 Stage Amp. For MOBILE RADIO DESCRIPTION The RA30H4552M1 is a 30-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 450- to
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RA30H4552M1
450-520MHz
RA30H4552M1
30-watt
520-MHz
LT 7210
470M
RA30H4552M1-101
074c
RF POWER amplifier 10 watt
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430M
Abstract: 470M RA30H4047M1 400M
Text: MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA30H4047M1 RoHS Compliance, 400-470MHz 30W 12.5V, 2 Stage Amp. For MOBILE RADIO DESCRIPTION The RA30H4047M1 is a 30-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 400- to
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RA30H4047M1
400-470MHz
RA30H4047M1
30-watt
470-MHz
430M
470M
400M
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lt 7210
Abstract: 400M 430M 470M RA60H4047M1 RA60H4047M1-101 RA60H4047M
Text: MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA60H4047M1 RoHS Compliance, 400-470MHz 60W 12.5V, 2 Stage Amp. For MOBILE RADIO DESCRIPTION The RA60H4047M1 is a 60-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 400- to
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RA60H4047M1
400-470MHz
RA60H4047M1
60-watt
470-MHz
lt 7210
400M
430M
470M
RA60H4047M1-101
RA60H4047M
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RA45H7687M1
Abstract: RA45H7687M1-101 45WATT DD 128 D transistor
Text: MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA45H7687M1 RoHS Compliance, 764-870MHz 45W 12.8V, 2 Stage Amp. For MOBILE RADIO DESCRIPTION The RA45H7687M1 is a 45-watt RF MOSFET Amplifier Module for 12.8-volt mobile radios that operate in the 764- to
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RA45H7687M1
764-870MHz
RA45H7687M1
45-watt
870-MHz
RA45H7687M1-101
45WATT
DD 128 D transistor
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RA60H4047M1-101
Abstract: RA60H4047M1 lt 7245 lt 7210 400M 430M 470M amplifier 60watt module
Text: MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA60H4047M1 RoHS Compliance, 400-470MHz 60W 12.5V, 2 Stage Amp. For MOBILE RADIO DESCRIPTION The RA60H4047M1 is a 60-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 400- to
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RA60H4047M1
400-470MHz
RA60H4047M1
60-watt
470-MHz
Mar2008
RA60H4047M1-101
lt 7245
lt 7210
400M
430M
470M
amplifier 60watt module
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lt 7245
Abstract: lt 7210 440M 470M RA60H4452M1 RA60H4452M1-101 POUT70
Text: MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA60H4452M1 RoHS Compliance, 440-520MHz 60W 12.5V, 2 Stage Amp. For MOBILE RADIO DESCRIPTION The RA60H4452M1 is a 60-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 440- to
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RA60H4452M1
440-520MHz
RA60H4452M1
60-watt
520-MHz
Mar2008
lt 7245
lt 7210
440M
470M
RA60H4452M1-101
POUT70
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Alcohol detection with vehicle controlling
Abstract: human detection sensors Reflective Sensor IR Parking sensor 46s smd transistor human detection sensor internal circuit design diagram of automatic ticket vending machine A773 MQ 6 gas SENSOR pin diagram panasonic motion sensor for out door automatic teller machine diagram
Text: GENERAL CATALOG BUILT-IN SENSORS 09/2010 Built-in Sensor 09/2010 Built-in Sensor Table of content Built-in Sensor Selector Chart .4 GS2 Sensor .8
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RM1205-9,
Alcohol detection with vehicle controlling
human detection sensors
Reflective Sensor IR Parking sensor
46s smd transistor
human detection sensor
internal circuit design diagram of automatic ticket vending machine
A773
MQ 6 gas SENSOR pin diagram
panasonic motion sensor for out door
automatic teller machine diagram
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RA45H8994M1
Abstract: RA45H8994M1-101
Text: MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA45H8994M1 RoHS Compliance, 896-941MHz 45W 12.8V, 2 Stage Amp. For MOBILE RADIO DESCRIPTION The RA45H8994M1 is a 45-watt RF MOSFET Amplifier Module for 12.8-volt mobile radios that operate in the 896- to
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RA45H8994M1
896-941MHz
RA45H8994M1
45-watt
941-MHz
RA45H8994M1-101
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RA45H8994M1
Abstract: RA45H8994M1-101 D3060
Text: MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA45H8994M1 RoHS Compliance, 896-941MHz 45W 12.8V, 2 Stage Amp. For MOBILE RADIO DESCRIPTION The RA45H8994M1 is a 45-watt RF MOSFET Amplifier Module for 12.8-volt mobile radios that operate in the 896- to
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RA45H8994M1
896-941MHz
RA45H8994M1
45-watt
941-MHz
RA45H8994M1-101
D3060
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Untitled
Abstract: No abstract text available
Text: austriamicrosystems AG is now ams AG The technical content of this austriamicrosystems datasheet is still valid. Contact information: Headquarters: ams AG Tobelbaderstrasse 30 8141 Unterpremstaetten, Austria Tel: +43 0 3136 500 0 e-Mail: [email protected]
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AS5035
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Untitled
Abstract: No abstract text available
Text: AS5035 PROGRAMMABLE 64 PPR INCREMENTAL MAGNETIC ROTARY ENCODER 1 2 General Description DATA SHEET Key Features The AS5035 is a magnetic incremental encoder with 64 quadrature pulses per revolution 8-bit resolution and index output. - Full turn (360°) contactless angular position encoder
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AS5035
AS5035
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BMN-35H
Abstract: gaussmeter rotary encoder volume AustriaMicrosystems 3D Hall AS5035 AS5035TR AS5040 SSOP16 SSOP-16 cylindrical permanent magnet
Text: AS5035 PROGRAMMABLE 64 PPR INCREMENTAL MAGNETIC ROTARY ENCODER 1 General Description 2 DATA SHEET Key Features The AS5035 is a magnetic incremental encoder with 64 quadrature pulses per revolution 8-bit resolution and index output. - Full turn (360°) contactless angular position encoder
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AS5035
AS5035
BMN-35H
gaussmeter
rotary encoder volume
AustriaMicrosystems 3D Hall
AS5035TR
AS5040
SSOP16
SSOP-16
cylindrical permanent magnet
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transistor AG 307
Abstract: 410E2 C67078-S5204-A4 E3043 E3062 E3062A
Text: PROFET BTS 307 Smart Highside Power Switch Product Summary Overvoltage protection Operating voltage On-state resistance Load current ISO Features • Overload protection • Current limitation • Short circuit protection • Thermal shutdown • Overvoltage protection
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O-220AB/5
2003-Oct-01
transistor AG 307
410E2
C67078-S5204-A4
E3043
E3062
E3062A
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4011N
Abstract: 4013N 4011-N 94HB IC 4015N TIF140 P3055 4021N Bc 140 transistor transistor BC 55 gb
Text: Leiterplattenführung horizontal Horizontal Press-in Card Guide CGI-W-160 r Nur eine Standardlänge speziell für Leiterplatten mit max. 2,3 mm Stärke, Wandhöhe 2,4 mm. One standard lenght for PCBs with max. 2,3 mm thickness, wall height 2,4 mm. r Montage: / Mounting:
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CGI-W-160
H1-50
H2-50
D-85640
4011N
4013N
4011-N
94HB
IC 4015N
TIF140
P3055
4021N
Bc 140 transistor
transistor BC 55 gb
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UGN3076T
Abstract: UGN3076 UGS3076T
Text: UGN-3076T/U AND UGS-3076T/U HALL EFFECT BIPOLAR DIGITAL LATCHES UGN-3076T/U AND UGS-3076T/U BIPOLAR HALL EFFECT DIGITAL LATCHES FEATURES • • • • • • Operable with Inexpensive Multipole Ring Magnets High Reliability — No Moving Parts Small Size
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UGN-3076T/U
UGS-3076T/U
UGN3076T
UGN3076
UGS3076T
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410G2
Abstract: 410G 410H2 BTS 307
Text: • «235b05 0012bi7 n i ■ SIEMENS PROFET BTS 307 Smart Highside Power Switch Features * * * * * * * * * * * * Overtoad protection Current limitation Short circuit protection Thermal shutdown Overvoltage protection Fast demagnetization of inductive loads
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235b05
0012bi7
an20AB/5,
E3043
C67078-S5204-A3
fl535bOS
410G2
410G
410H2
BTS 307
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UGN3077U
Abstract: UGS-3077U UGN-3077T UGN-3077U SENSOR HALL 452 hall current sensor 3A UGN3077 Sprague Hall Effect 820 572 711 UGS-3077T
Text: U G N -3 0 7 7T /U A N D U G S -3 0 77T/U H A LL EFFECT LATCHES FOR BRUSHLESS DC M O T O R C O N TR O L UGN-3077T/U AND UGS-3077T/U HALL EFFECT LATCHES FOR BRUSHLESS DC MOTOR CONTROL —Symmetrical Duty Cycle FEATURES • Symmetrical Output • For Use with Multipole Ring Magnets
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UGN-3077T/U
UGS-3077T/U
UGS-3077T/U
UGN3077U
UGS-3077U
UGN-3077T
UGN-3077U
SENSOR HALL 452
hall current sensor 3A
UGN3077
Sprague Hall Effect
820 572 711
UGS-3077T
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mje 3003
Abstract: mje 1303 transistor Bf 444 369-42 BFT25A 433-2 npn sot23 1303 DDE537A transistor SOT23 4d Philips FA 291
Text: Philips Semiconductors b b 5 3 ci 3 1 N AMER DDE5 3 bb 003 ^lA PX P H ILIP S /D IS C R E TE Product specification b7 E NPN 5 GHz wideband transistor FEATURES • c BFT25A PINNING Low current consumption 100 nA - 1 mA • Low noise figure • Gold metallization ensures
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bb53ci31
DDE53bb
BFT25A
BFT25A
mje 3003
mje 1303
transistor Bf 444
369-42
433-2 npn
sot23 1303
DDE537A
transistor SOT23 4d
Philips FA 291
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TC9159P
Abstract: tc9158p
Text: h' lifmiir B 9 0 9 7 2 4 7 TO SHIBA. ELECTRONIC i g 02E » ? 18102 T-77-2Í TC9158P, TC9159P RECEIVING FREQUENCY DYNAMIC DRIVER. - Unit in mm The TC9158P/TC9159P is a receiving frequency display driver developed for the DTS-6/8. This driver latches serial data transferred from
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T-77-2Ã
TC9158P,
TC9159P
TC9158P/TC9159P
TC9158P
TC9159P
LW/FMJ/FMU/AM9/AM10)
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Untitled
Abstract: No abstract text available
Text: DATA SHEET NEC SILICON TRANSISTOR 2SC5010 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION T h e 2 S C 5 0 1 0 is an NPN e p ita xia l silico n tra n s is to r d e s ig n e d fo r use in low no ise and sm a ll sig n a l a m p lifie rs from
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2SC5010
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