Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    TRANSISTOR AJW Search Results

    TRANSISTOR AJW Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR AJW Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    4.702.119

    Abstract: 41532 AT-32032 AT-41532 AT-41532-BLK S21E AT-41532-TR1G marking R5* sc-70
    Text: AT-41532 General Purpose, Low Current NPN Silicon Bipolar Transistor Data Sheet Description Features Avago’s AT-41532 is a general purpose NPN bipolar transistor that has been optimized for maximum ft at low voltage operation, making it ideal for use in battery


    Original     		PDF AT-41532 AT-41532 OT-323 SC-70) 5965-6167EN 5989-2650EN 4.702.119 41532 AT-32032 AT-41532-BLK S21E AT-41532-TR1G marking R5* sc-70

    transistor TT 2146

    Abstract: AT-32032 AT-32032-BLK 32032
    Text: AT-32032 Low Current, High Performance NPN Silicon Bipolar Transistor Data Sheet Description Features Avago’s AT-32032 is a high performance NPN bipolar transistor that has been optimized for maximum ft at low voltage operation, making it ideal for use in battery


    Original     		PDF AT-32032 AT-32032 OT323 SC-70) OT-323 5965-6216E 5989-2644EN transistor TT 2146 AT-32032-BLK 32032

    transistor TT 2146

    Abstract: marking R5* sc-70
    Text: AT-32032 Low Current, High Performance NPN Silicon Bipolar Transistor Data Sheet Description Features Avago’s AT-32032 is a high performance NPN bipolar transistor that has been optimized for maximum ft at low voltage operation, making it ideal for use in battery


    Original     		PDF AT-32032 AT-32032 OT-323 SC-70) MGA-81563 5989-2644EN AV02-1963EN transistor TT 2146 marking R5* sc-70

    darlington cascode second stage

    Abstract: transistor AT-320 agilent Transistor W03 56 A1T TRANSISTOR AT-32063 d2030
    Text: Low Noise Amplifiers for 320 MHz and 850 MHz Using the AT-32063 Dual Transistor Application Note 1131 Introduction This application note discusses the Agilent Technologies AT-32063 dual low noise silicon bipolar transistor. The AT-32063 consists of two AT-320XX transistors


    Original     		PDF AT-32063 AT-32063 AT-320XX OT-363 SC-70) AT-32063, 5966-0781E darlington cascode second stage transistor AT-320 agilent Transistor W03 56 A1T TRANSISTOR d2030

    AT-32032

    Abstract: AT-41532 AT-41532-BLK S21E s1225 AT41532TR1G marking R5* sc-70
    Text: Agilent AT-41532 General Purpose, Low Current NPN Silicon Bipolar Transistor Data Sheet Features Description Agilent’s AT-41532 is a general purpose NPN bipolar transistor that has been optimized for maximum ft at low voltage operation, making it ideal for use


    Original     		PDF AT-41532 AT-41532 OT-323 SC-70) SC-70 OT-323) 5965-6167E 5989-2650EN AT-32032 AT-41532-BLK S21E s1225 AT41532TR1G marking R5* sc-70

    transistor TT 2146

    Abstract: 3335 2.2 k resistor AJW 623 AT-32032 AT-32032-BLK C2L4 transistors malaysia 9409 marking R5* sc-70
    Text: Agilent AT-32032 Low Current, High Performance NPN Silicon Bipolar Transistor Data Sheet Features Description Agilent’s AT-32032 is a high performance NPN bipolar transistor that has been optimized for maximum ft at low voltage operation, making it ideal for use


    Original     		PDF AT-32032 AT-32032 OT-323 SC-70) 5965-6216E 5989-2644EN transistor TT 2146 3335 2.2 k resistor AJW 623 AT-32032-BLK C2L4 transistors malaysia 9409 marking R5* sc-70

    transistor BD 139

    Abstract: AP 1100 R1 darlington cascode second stage transistor AT-320 agilent AT32063 AT-32063
    Text: Low Noise Amplifiers for 320 MHz and 850 MHz Using the AT-32063 Dual Transistor Application Note 1131 Introduction This application note discusses the Agilent Technologies AT-32063 dual low noise silicon bipolar transistor. The AT32063 consists of two AT-320XX transistors mounted in a


    Original     		PDF AT-32063 AT32063 AT-320XX OT-363 SC-70) AT-32063, transistor BD 139 AP 1100 R1 darlington cascode second stage transistor AT-320 agilent

    AT-41532

    Abstract: TRANSISTOR TT 2190 transistor ajw
    Text: AT-41532 General Purpose, Low Current NPN Silicon Bipolar Transistor Data Sheet Description Features Avago’s AT-41532 is a general purpose NPN bipolar transistor that has been optimized for maximum ft at low voltage operation, making it ideal for use in battery powered


    Original     		PDF AT-41532 AT-41532 OT-323 SC-70) MGA-81563 5989-2650EN AV02-1964EN TRANSISTOR TT 2190 transistor ajw

    transistor c 5936 circuit diagram

    Abstract: AT-32063 c 2073 amplifier circuit diagram D2030 18 sot-363 rf power amplifier S2PB
    Text: Low Noise Amplifiers for 320 MHz and 850 MHz Using the AT-32063 Dual Transistor Application Note 1131 Introduction This application note discusses the Hewlett-Packard AT-32063 dual low noise silicon bipolar transistor. The AT-32063 consists of two AT-320XX transistors mounted in a


    Original     		PDF AT-32063 AT-320XX OT-363 SC-70) AT-32063, 5966-0781E transistor c 5936 circuit diagram c 2073 amplifier circuit diagram D2030 18 sot-363 rf power amplifier S2PB

    Untitled

    Abstract: No abstract text available
    Text: General Purpose, Low Current NPN␣ Silicon Bipolar Transistor Technical Data AT-41532 Features • General Purpose NPN Bipolar Transistor Optimized for Low Current, Low Voltage Applications at 900␣ MHz, 1.8␣ GHz, and 2.4␣ GHz • Performance 5␣ V, 5␣ mA


    Original     		PDF AT-41532 OT-323 SC-70) SC-70 OT-323) AT-41532 5965-6167E

    2.2 k resistor

    Abstract: No abstract text available
    Text: Low Current, High Performance NPN Silicon Bipolar Transistor Technical Data AT-32032 Features • High Performance Bipolar Transistor Optimized for Low Current, Low Voltage Applications at 900 MHz, 1.8␣ GHz, and 2.4 GHz • Performance at 2.7 V, 5 mA: 900 MHz: 1 dB NF, 15 dB GA


    Original     		PDF AT-32032 OT-323 SC-70) SC-70 OT-323) AT-32032 5965-6216E 2.2 k resistor

    Untitled

    Abstract: No abstract text available
    Text: General Purpose, Low Current NPN Silicon Bipolar Transistor Technical Data AT-41532 Features • General Purpose NPN Bipolar Transistor Optimized for Low Current, Low Voltage Applications at 900 MHz, 1.8 GHz, and 2.4 GHz • Performance 5 V, 5 mA 0.9 GHz: 1 dB NF, 15.5 dB GA


    Original     		PDF AT-41532 OT-323 SC-70) SC-70 OT-323) AT-41532 5965-6167E

    IC pt 2399 CIRCUIT DIAGRAM

    Abstract: No abstract text available
    Text: General Purpose, Low Current NPN Silicon Bipolar Transistor Technical Data AT-41532 Features • General Purpose NPN Bipolar Transistor Optimized for Low Current, Low Voltage Applications at 900 MHz, 1.8 GHz, and 2.4 GHz • Performance 5 V, 5 mA 0.9 GHz: 1 dB NF, 15.5 dB G A


    Original     		PDF AT-41532 OT-323 SC-70) SC-70 OT-323) AT-41532 5965-6167E IC pt 2399 CIRCUIT DIAGRAM

    SOT 23 AJW

    Abstract: transistor TT 3034 Resistors 2306 181 AT-32032 AT-41532 AT-41532-BLK S21E 41532 mount chip transistor 332
    Text: General Purpose, Low Current NPN Silicon Bipolar Transistor Technical Data AT-41532 Features • General Purpose NPN Bipolar Transistor Optimized for Low Current, Low Voltage Applications at 900 MHz, 1.8 GHz, and 2.4 GHz • Performance 5 V, 5 mA 0.9 GHz: 1 dB NF, 15.5 dB GA


    Original     		PDF AT-41532 OT-323 SC-70) 5965-6167E SOT 23 AJW transistor TT 3034 Resistors 2306 181 AT-32032 AT-41532 AT-41532-BLK S21E 41532 mount chip transistor 332

    transistor TT 2146

    Abstract: AT-32032 AT-32032-BLK AT-32032-TR1 60668 transistor ajw 64256
    Text: Low Current, High Performance NPN Silicon Bipolar Transistor Technical Data AT-32032 Features • High Performance Bipolar Transistor Optimized for Low Current, Low Voltage Applications at 900 MHz, 1.8 GHz, and 2.4 GHz • Performance at 2.7 V, 5 mA: 900 MHz: 1 dB NF, 15 dB GA


    Original     		PDF AT-32032 OT-323 SC-70) SC-70 OT-323) 5965-6216E transistor TT 2146 AT-32032 AT-32032-BLK AT-32032-TR1 60668 transistor ajw 64256

    Untitled

    Abstract: No abstract text available
    Text: SAMHOP Microelectronics Corp. SM1103/SM1104 300mA CMOS LDO w/ ENABLE GENERAL DESCRIPTION FEATURES The SM1103/SM1104 is a 300mA Low Dropout and Low Noise micro-power Voltage Regulator suitable for battery powered portable equipments. The SM1103/SM1104 designed stable with


    Original     		PDF SM1103/SM1104 300mA SM1103/SM1104 OT23-6

    f541m43b

    Abstract: 2N2040 transistor D210 transistor s2p WL30 ATF-54143 ATF541M4 ATF551M4 BCV62 TL34
    Text: High Intercept Point Driver/Low Noise Amplifiers for 5.125–5.325 GHz and 5.725–5.825 GHz Applications using the Avago ATF-541M4 Enhancement Mode PHEMT Application Note 1350 Introduction Avago Technologies’ ATF-541M4 is a low noise high intercept point enhancement mode PHEMT designed


    Original     		PDF ATF-541M4 ATF-541M4 5988-9004EN f541m43b 2N2040 transistor D210 transistor s2p WL30 ATF-54143 ATF541M4 ATF551M4 BCV62 TL34

    TRANSISTOR W25

    Abstract: TL39 Phycomp TL42 TL34 ATF-54143 ATF-541M4 ATF-551M4 BCV62 w21 transistor
    Text: High Intercept Point Driver/Low Noise Amplifiers for 5.125–5.325 GHz and 5.725– 5.825 GHz Applications using the Agilent ATF-541M4 Enhancement Mode PHEMT Application Note 1350 to its 400 micron equivalent, the ATF-551M4, the ATF-541M4 provides greater power output with


    Original     		PDF ATF-541M4 ATF-551M4, ATF-54143 SC-70 ATF-541M4) 5988-9004EN TRANSISTOR W25 TL39 Phycomp TL42 TL34 ATF-54143 ATF-551M4 BCV62 w21 transistor

    SOT 23 AJW

    Abstract: PART MARKING 118 INTERSIL marking P5 AJW SOT-23 ISL90460 ISL90460UIE527-TK ISL90460UIE527Z-TK ISL90460UIH527-TK ISL90460UIH527Z ISL90460WIE527-TK
    Text: ISL90460 Single Volatile 32-Tap XDCP Data Sheet October 7, 2005 FN8225.3 Digitally Controlled Potentiometer XDCP Features The Intersil ISL90460 is a digitally controlled potentiometer (XDCP). Configured as a variable resistor, the device consists of a resistor array, wiper switches, a control section,


    Original     		PDF ISL90460 32-Tap FN8225 ISL90460 SOT 23 AJW PART MARKING 118 INTERSIL marking P5 AJW SOT-23 ISL90460UIE527-TK ISL90460UIE527Z-TK ISL90460UIH527-TK ISL90460UIH527Z ISL90460WIE527-TK

    Untitled

    Abstract: No abstract text available
    Text: ISL90460 Single Volatile 32-Tap XDCP Data Sheet October 7, 2005 FN8225.3 Digitally Controlled Potentiometer XDCP Features The Intersil ISL90460 is a digitally controlled potentiometer (XDCP). Configured as a variable resistor, the device consists of a resistor array, wiper switches, a control section,


    Original     		PDF ISL90460 32-Tap FN8225 ISL90460

    TRANSISTOR C815

    Abstract: equivalent transistor C5001 ATF-58143 AV02-0913EN ATF581433 surface mount transistor c633 C5001 transistor fet curtice AN-1222 LL1005-FH2N2S
    Text: ATF-58143 E-pHEMT GaAs FET Low Noise Amplifier Design for 900 MHz Applications Application Note 1375 Introduction A critical first step in any LNA design is the selection of the ­active device. Low cost field ­effect transistors are often used due to their low noise figures and high linearity. Besides having a very low typical noise figure 0.6


    Original     		PDF ATF-58143 900MHz ATF-58143 AN-1281: ATF54143 5989-9554EN AV02-0913EN TRANSISTOR C815 equivalent transistor C5001 ATF581433 surface mount transistor c633 C5001 transistor fet curtice AN-1222 LL1005-FH2N2S

    equivalent transistor C5001

    Abstract: C5001 transistor c815 transistor transistor c815 ATF581433 ATF-58143 transistor C633 ATF58143 LL1005-FH2N2S TRANSISTORS BJT list
    Text: Agilent ATF-58143 E-pHEMT GaAs FET Low Noise Amplifier Design for 900 MHz Applications Application Note 1375 Introduction A critical first step in any LNA design is the selection of the active device. Low cost field effect transistors are often used due to their low noise figures


    Original     		PDF ATF-58143 ATF-58143 MTT-28, AN-1281: ATF-54143 AN-1222: equivalent transistor C5001 C5001 transistor c815 transistor transistor c815 ATF581433 transistor C633 ATF58143 LL1005-FH2N2S TRANSISTORS BJT list

    agilent pHEMT transistor

    Abstract: Curtice transistor ajw agilent pHEMT transistor LNA LOW NOISE AMPLIFIER ATF-54143 AN-1222 ATF55143 ATF-55143 ATF-551M4 advanced design system
    Text: Agilent ATF-55143 E-pHEMT GaAs FET Low Noise Amplifier Design for 1.575 GHz GPS Applications Application Note 1376 Introduction A critical first step in any LNA design is the selection of the active device. Low cost field effect transistors are often used


    Original     		PDF ATF-55143 ATF-55143 5988-9555EN agilent pHEMT transistor Curtice transistor ajw agilent pHEMT transistor LNA LOW NOISE AMPLIFIER ATF-54143 AN-1222 ATF55143 ATF-551M4 advanced design system

    transistor ajw

    Abstract: ATF55143 Curtice AN-1222 ATF-54143 ATF-55143 ATF-551M4 ATF-5X143 55143
    Text: ATF-55143 E-pHEMT GaAs FET Low Noise Amplifier Design for 1.575 GHz GPS Applications Application Note 1376 Introduction A critical first step in any LNA design is the selection of the active device. Low cost field effect transistors are often used due to their low noise figures and high


    Original     		PDF ATF-55143 ATF-55143 AN-1281: ATF-54143 5988-9555EN transistor ajw ATF55143 Curtice AN-1222 ATF-551M4 ATF-5X143 55143