philips ferroxcube 4c6
Abstract: Philips Application Note ECO6907 Design of H.F. Wideband Power Transformers ferroxcube 4C6 toroid core philips toroid 4c6 ECO6907 4C6 toroid NCO8602 4c6 philips 14 x 9 x 5mm ECO7703
Text: APPLICATION NOTE A wideband power amplifier 25 − 110 MHz with the MOS transistor BLF245 NCO8602 Philips Semiconductors A wideband power amplifier (25 − 110 MHz) with the MOS transistor BLF245 CONTENTS 1 SUMMARY 2 INTRODUCTION 3 DESIGN OF THE AMPLIFIER
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BLF245
NCO8602
SCA57
philips ferroxcube 4c6
Philips Application Note ECO6907
Design of H.F. Wideband Power Transformers
ferroxcube 4C6 toroid core
philips toroid 4c6
ECO6907
4C6 toroid
NCO8602
4c6 philips 14 x 9 x 5mm
ECO7703
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transistor T04
Abstract: SiGe HBT GAIN BLOCK MMIC AMPLIFIER TRANSISTOR 30GHZ THM2004J TRANSISTOR C 608 Germanium Amplifier Circuit diagram Tachyonics
Text: PRELIMINARY THM2004J Wideband Linear Amplifier SiGe HBT MMIC Wideband Linear Amplifier Descriptions THM2004J is a high performance cascadeable 50-ohm amplifier. This RFIC uses the latest Silicon Germanium Hetero Junction Bipolar Transistor TAHB09 process of Tachyonics Co.,
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THM2004J
THM2004J
50-ohm
TAHB09)
30GHz
1000MHz
100MHz
transistor T04
SiGe HBT GAIN BLOCK MMIC AMPLIFIER
TRANSISTOR 30GHZ
TRANSISTOR C 608
Germanium Amplifier Circuit diagram
Tachyonics
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Buffer Amplifier Ghz
Abstract: THM2004J
Text: PRELIMINARY THM2004J Wideband Linear Amplifier SiGe HBT MMIC Wideband Linear Amplifier Descriptions THM2004J is a high performance cascadeable 50-ohm amplifier. This RFIC uses the latest Silicon Germanium Hetero Junction Bipolar Transistor TAHB09 process of Tachyonics Co.,
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THM2004J
THM2004J
50-ohm
TAHB09)
30GHz
1000MHz
100MHz
Buffer Amplifier Ghz
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THM2003J
Abstract: Tachyonics
Text: PRELIMINARY Wideband Linear Amplifier THM2003J SiGe HBT MMIC Wideband Linear Amplifier Descriptions THM2003J is a high performance cascadeable 50-ohm amplifier. This RFIC uses the latest Silicon Germanium Hetero Junction Bipolar Transistor TAHB09 process of Tachyonics Co.,
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THM2003J
THM2003J
50-ohm
TAHB09)
30GHz
1000MHz
100MHz
Tachyonics
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Untitled
Abstract: No abstract text available
Text: RF Amplifier Design Using HFA3046, HFA3096, HFA3127, HFA3128 Transistor Arrays Application Note November 1996 Introduction [ /Title AN93 15.1 /Subject (RF Amplifier Design Using HFA30 46, HFA30 96, HFA31 27, HFA31 28 Transistor Arrays ) /Autho r () /Keywords
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HFA3046,
HFA3096,
HFA3127,
HFA3128
AN9315
HFA30
HFA31
HFA3046/3096/3127/3128
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222259116641
Abstract: 222259016629 bvc62 AN98013 BD139 transistor circuit diagram BLV589 c38 transistor RG4M UHF amplifier module BLV859
Text: APPLICATION NOTE BLV859 UHF linear push-pull power transistor AN98013 Philips Semiconductors BLV859 UHF linear push-pull power transistor CONTENTS 1 ABSTRACT 2 INTRODUCTION 2.1 Amplifier Electrical design objectives 3 DESIGN OF THE AMPLIFIER 3.1 3.2 3.3 3.4
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BLV859
AN98013
SCA57
222259116641
222259016629
bvc62
AN98013
BD139 transistor circuit diagram
BLV589
c38 transistor
RG4M
UHF amplifier module
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9635
Abstract: sige hbt TARF2201 wideband linear amplifier Tx SiGe MMIC
Text: SiGe HBT MMIC Wideband Linear Amplifier TARF2201 SiGe HBT MMIC Wideband Linear Amplifier Descriptions TARF 2201 is a high performance cascadeable 50-ohm amplifier. This RFIC uses the latest Silicon Germanium Hetero Junction Bipolar Transistor TAHB09 process of Tachyonics Co.,
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TARF2201
50-ohm
TAHB09)
30GHz
TARF2201
12dBm
900MHz
OT343
9635
sige hbt
wideband linear amplifier
Tx SiGe MMIC
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9829 A
Abstract: TARF2202 .7E8
Text: SiGe HBT MMIC Wideband Linear Amplifier TARF2202 SiGe HBT MMIC Wideband Linear Amplifier Descriptions TARF 2202 is a high performance cascadeable 50-ohm amplifier. This RFIC uses the latest Silicon Germanium Hetero Junction Bipolar Transistor TAHB09 process of Tachyonics Co.,
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TARF2202
50-ohm
TAHB09)
30GHz
TARF2202
1900MHz
100MHz
9829 A
.7E8
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Untitled
Abstract: No abstract text available
Text: Ordering number:ENN4668 PNP Epitaxial Planar Silicon Transistor 2SA1723 High-Frequency Amplifier, Medium-Power Amplifier Applications Applications Package Dimensions • Wideband amplifiers. · High-frequency drivers. unit:mm 2009B [2SA1723] Features 8.0 2.7
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ENN4668
2SA1723
2009B
2SA1723]
300mA)
O-126
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2SA1723
Abstract: ITR04378 ITR04379 ITR04380 ITR04381 ITR04382
Text: Ordering number:ENN4668 PNP Epitaxial Planar Silicon Transistor 2SA1723 High-Frequency Amplifier, Medium-Power Amplifier Applications Applications Package Dimensions • Wideband amplifiers. · High-frequency drivers. unit:mm 2009B [2SA1723] Features 8.0 2.7
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ENN4668
2SA1723
2009B
2SA1723]
300mA)
O-126
2SA1723
ITR04378
ITR04379
ITR04380
ITR04381
ITR04382
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2N5109UB
Abstract: 19500/453 2N5109UBJ 2N5109UBJS 2N5109UBJX
Text: 2N5109UB Silicon NPN Transistor Data Sheet Description Applications Semicoa Semiconductors offers: • General purpose • VHF-UHF amplifier transistor • NPN silicon transistor • Screening and processing per MIL-PRF-19500 Appendix E • JAN level 2N5109UBJ
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2N5109UB
MIL-PRF-19500
2N5109UBJ)
2N5109UBJX)
2N5109UBJV)
2N5109UBJS)
MIL-STD-750
MIL-PRF-19500/453
-10dB
2N5109UB
19500/453
2N5109UBJ
2N5109UBJS
2N5109UBJX
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JANTX 2N5109
Abstract: 2N5109 2N5109J 2N5109JS 2N5109JV 2N5109JX
Text: 2N5109 Silicon NPN Transistor Data Sheet Description Applications Semicoa Semiconductors offers: • General purpose • VHF-UHF amplifier transistor • NPN silicon transistor • Screening and processing per MIL-PRF-19500 Appendix E • JAN level 2N5109J
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2N5109
MIL-PRF-19500
2N5109J)
2N5109JX)
2N5109JV)
2N5109JS)
MIL-STD-750
MIL-PRF-19500/453
-10dB
JANTX 2N5109
2N5109
2N5109J
2N5109JS
2N5109JV
2N5109JX
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JANTX 2N5109
Abstract: No abstract text available
Text: 2N5109 Silicon NPN Transistor Data Sheet Description Applications SEMICOA Corporation offers: • General purpose • VHF-UHF amplifier transistor • NPN silicon transistor • Screening and processing per MIL-PRF-19500 Appendix E • JAN level 2N5109J
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2N5109
MIL-PRF-19500
2N5109J)
2N5109JX)
2N5109JV)
2N5109JS)
MIL-STD-750
MIL-PRF-19500/453
-10dB
JANTX 2N5109
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JANTX 2N5109
Abstract: 2N510
Text: 2N5109 Silicon NPN Transistor Data Sheet Description Applications Semicoa Semiconductors offers: • General purpose • VHF-UHF amplifier transistor • NPN silicon transistor • Screening and processing per MIL-PRF-19500 Appendix E • JAN level 2N5109J
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2N5109
MIL-PRF-19500
2N5109J)
2N5109JX)
2N5109JV)
2N5109JS)
MIL-STD-750
MIL-PRF-19500/453
-10dB
JANTX 2N5109
2N510
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DIE CHIP 51 FET
Abstract: No abstract text available
Text: EC4790 Wide Band Power FET GaAs Field Effect Transistor Description The EC4790 device,available in chip form, is a power GaAs Field Effect Transistor, designed for wideband oscillator and amplifier applications, up to 18GHz Individual via hole connection is made
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EC4790
EC4790
18GHz
23dBm
26dBm
DSEC47907003
DIE CHIP 51 FET
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Philips 2222 050 capacitor
Abstract: No abstract text available
Text: Philips Semiconductors Product specification NPN 7GHz wideband transistor DESCRIPTION BFG135 PINNING NPN silicon planar epitaxial transistor in a plastic SOT223 envelope, intended for wideband amplifier applications. The small emitter structures, with integrated
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BFG135
OT223
MSB002
OT223.
711062b
110fi2b
711Da2b
Philips 2222 050 capacitor
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BFG135 power amplifier for 900Mhz
Abstract: BFG135 amplifier BFG135 A amplifier bfg135 BFG135 TRANSISTOR MBB300 BFG135 - BFG135 microstripline npn 2222 transistor power amplifier specifications at 900Mhz
Text: Philips Semiconductors Product specification NPN 7GHz wideband transistor DESCRIPTION BFG135 PINNING NPN silicon planar epitaxial transistor in a plastic SOT223 envelope, intended for wideband amplifier applications. The small emitter structures, with integrated
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BFG135
OT223
711Qfl2ti
7110fl2b
BFG135
BFG135 power amplifier for 900Mhz
BFG135 amplifier
BFG135 A amplifier
BFG135 TRANSISTOR
MBB300
BFG135 - BFG135
microstripline
npn 2222 transistor
power amplifier specifications at 900Mhz
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BFG35
Abstract: TRANSISTOR FQ BFG35 amplifier BHS111 npn 2222 transistor TRANSISTOR NPN c4 nf C2570
Text: Philips Semiconductors Product specification NPN 4 GHz wideband transistor DESCRIPTION BFG35 PINNING NPN planar epitaxial transistor mounted in a plastic SOT223 envelope, intended for wideband amplifier applications. It features high output voltage capabilities.
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BFG35
OT223
OT223.
MSA035
TRANSISTOR FQ
BFG35 amplifier
BHS111
npn 2222 transistor
TRANSISTOR NPN c4 nf
C2570
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BFG35 amplifier
Abstract: No abstract text available
Text: Philips Semiconductors Product specification NPN 4 GHz wideband transistor DESCRIPTION BFG35 PINNING NPN planar epitaxial transistor mounted in a plastic SOT223 envelope, intended for wideband amplifier applications. It features high output voltage capabilities.
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OT223
I3FG55.
BFG35
OT223.
MBB364
BFG35 amplifier
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npn 2222 transistor
Abstract: BFG198 MS80 din 45325 2222 TRANSISTOR NPN Philips 2222 114 capacitor 2222 851
Text: Philips Semiconductors Product specification NPN 8 GHz wideband transistor DESCRIPTION BFG198 PINNING NPN planar epitaxial transistor in a plastic SOT223 envelope, intended for wideband amplifier applications. The device features a high gain and excellent output voltage capabilities.
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BFG198
OT223
7110fl2b
MSA035
OT223.
npn 2222 transistor
BFG198
MS80
din 45325
2222 TRANSISTOR NPN
Philips 2222 114 capacitor
2222 851
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2N6439
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Power Transistor . . . designed primarily for wideband large-signal output amplifier stages in the 225 to 400 MHz frequency range. • Guaranteed Performance in 225 to 400 MHz Broadband Amplifier @ 28 Vdc
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2N6439
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philips 22 ah 590
Abstract: npn 2222 transistor 629 08103 BFG198 TRANSISTOR FQ Philips 2222 032
Text: Philips Semiconductors Product specification NPN 8 GHz wideband transistor DESCRIPTION BFG198 PINNING NPN planar epitaxial transistor in a plastic S O T 223 envelope, intended for wideband amplifier applications. The device features a high gain and excellent output voltage capabilities.
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BFG198
OT223
7110fl2b
MSA035
OT223.
711002b
philips 22 ah 590
npn 2222 transistor
629 08103
TRANSISTOR FQ
Philips 2222 032
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transistor zg
Abstract: F689K BF689 zg transistor
Text: Philips Semiconductors Product specification NPN 2 GHz wideband transistor DESCRIPTION BF689K PINNING NPN transistor in a plastic SOT54 TO-92 variant envelope. It is intended for application as an amplifier or oscillator in the VHF and UHF range. PIN DESCRIPTION
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BF689K
F689K
SB034
transistor zg
BF689
zg transistor
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Untitled
Abstract: No abstract text available
Text: bb53^31 Philips Semiconductors QQgMflgg 335 WAPX Product specification NPN 4 GHz wideband transistor ^ BFG35 M APIER PHILIPS/DISCRETE b7E D DESCRIPTION PINNING NPN planar epitaxial transistor mounted in a plastic SOT223 envelope, intended for wideband amplifier applications. It features
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BFG35
OT223
BFG55.
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