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    TRANSISTOR AOD408 Search Results

    TRANSISTOR AOD408 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR AOD408 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    AOD408

    Abstract: aoD408 transistor L082 Transistor AOD408
    Text: AOD408 N-Channel Enhancement Mode Field Effect Transistor General Description Features The AOD408 uses advanced trench technology to provide excellent RDS ON and low gate charge. This device is suitable for use as a load switch or in PWM applications. Standard Product AOD408 is Pb-free


    Original     		AOD408 AOD408L O-252 aoD408 transistor L082 Transistor AOD408 PDF

    Untitled

    Abstract: No abstract text available
    Text: Rev 2: Sept 2004 AOD408, AOD408L Green Product N-Channel Enhancement Mode Field Effect Transistor General Description Features The AOD408 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use as a load switch or in PWM


    Original     		AOD408, AOD408L AOD408 O-252 PDF

    AOD408

    Abstract: No abstract text available
    Text: AOD408 N-Channel Enhancement Mode Field Effect Transistor General Description Features The AOD408 uses advanced trench technology to provide excellent RDS ON and low gate charge. This device is suitable for use as a load switch or in PWM applications. Standard Product AOD408 is Pb-free (meets ROHS &


    Original     		AOD408 AOD408 O-252 PDF

    Untitled

    Abstract: No abstract text available
    Text: AOD408 N-Channel Enhancement Mode Field Effect Transistor General Description Features The AOD408 uses advanced trench technology to provide excellent RDS ON and low gate charge. This device is suitable for use as a load switch or in PWM applications. Standard Product AOD408 is Pb-free (meets ROHS &


    Original     		AOD408 AOD408 O-252 PDF

    D408

    Abstract: D408 transistor d408 be transistor d408 diode d408 TRANSISTOR aoD408 AOD408L
    Text: AOD408 N-Channel Enhancement Mode Field Effect Transistor General Description Features The AOD408 uses advanced trench technology to provide excellent RDS ON and low gate charge. This device is suitable for use as a load switch or in PWM applications. Standard Product AOD408 is Pbfree (meets ROHS & Sony 259 specifications).


    Original     		AOD408 AOD408 AOD408L O-252 PD-00085 D408 D408 transistor d408 be transistor d408 diode d408 TRANSISTOR aoD408 PDF

    AOD408

    Abstract: L082 aoD408 transistor AOD408L
    Text: AOD408 N-Channel Enhancement Mode Field Effect Transistor General Description Features The AOD408 uses advanced trench technology to provide excellent RDS ON and low gate charge. This device is suitable for use as a load switch or in PWM applications. Standard Product AOD408 is Pbfree (meets ROHS & Sony 259 specifications).


    Original     		AOD408 AOD408 AOD408L O-252 L082 aoD408 transistor PDF