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    TRANSISTOR B1 Search Results

    TRANSISTOR B1 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR B1 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    MN1280

    Abstract: KGT50N60kda bc547 smd transistor kia1117af transistor smd zG y6 smd transistor MB4213 y4 smd transistor smd transistor zaa KGT25N120NDA
    Text: Table of Contents SMD THD ▣ Table of Contents 2 ▣ Bipolar Junction Transistor 4 Transistor Line-up PNP Transistor Transistor Line-up (NPN Transistor) Small Signal General Purpose Transistor Current Regulating Device Small Signal Low Noise Transistor


    Original     		PDF

    KIA78*pI

    Abstract: transistor KIA78*p TRANSISTOR 2N3904 khb*9D5N20P khb9d0n90n KID65004AF TRANSISTOR mosfet KIA7812API khb*2D0N60P
    Text: KEC 2N2904E Transistor KEC BC859 Transistor KEC F1B2CCI FRD KEC KDS135S Diode KEC 2N2906E Transistor KEC BC860 Transistor KEC KAC3301QN Intergrated Circuit KEC KDS160 Diode KEC 2N3904 Transistor KEC BCV71 Transistor KEC KDB2151E Diode KEC KDS160E Diode KEC


    Original     		PDF 2N2904E BC859 KDS135S 2N2906E BC860 KAC3301QN KDS160 2N3904 BCV71 KDB2151E KIA78*pI transistor KIA78*p TRANSISTOR 2N3904 khb*9D5N20P khb9d0n90n KID65004AF TRANSISTOR mosfet KIA7812API khb*2D0N60P

    khb*9D5N20P

    Abstract: khb9d0n90n 6v Zener diode khb*2D0N60P transistor KHB7D0N65F BC557 transistor kia*278R33PI KHB9D0N90N circuit ktd998 transistor
    Text: KEC 2N2904E Transistor KEC BC859 Transistor KEC F1B2CCI FRD KEC KDS135S Diode 2N2906E Transistor KEC BC860 Transistor KEC KAC3301QN Intergrated Circuit KEC KDS160 Diode KEC KEC 2N3904 Transistor KEC BCV71 Transistor KEC KDB2151E Diode KEC KDS160E Diode KEC


    Original     		PDF 2N2904E BC859 KDS135S 2N2906E BC860 KAC3301QN KDS160 2N3904 BCV71 KDB2151E khb*9D5N20P khb9d0n90n 6v Zener diode khb*2D0N60P transistor KHB7D0N65F BC557 transistor kia*278R33PI KHB9D0N90N circuit ktd998 transistor

    DUAL TRANSISTOR

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD UMZ1N Preliminary DUAL TRANSISTOR GENERAL PURPOSE TRANSISTOR  DESCRIPTION The UTC UMZ1N is a dual transistor, including an NPN transistor and a PNP transistor. It uses UTC’s advanced technology to provide customers with high DC current gain, etc.


    Original     		PDF OT-363 QW-R218-024 DUAL TRANSISTOR

    Untitled

    Abstract: No abstract text available
    Text: SEMICONDUCTOR KTC601E TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. B B1 FEATURES C A High pairing property in hFE. 1 2 DIM A 5 A1 Excellent temperature response between these 2 transistor. C A super-minimold package houses 2 transistor.


    Original     		PDF KTC601E

    KTA701E

    Abstract: No abstract text available
    Text: SEMICONDUCTOR KTA701E TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. B B1 FEATURES C A ᴌHigh pairing property in hFE. 1 6 2 5 3 4 A1 ᴌExcellent temperature response between these 2 transistor. C ᴌA super-minimold package houses 2 transistor.


    Original     		PDF KTA701E KTA701E

    KTC601E

    Abstract: transistor A1
    Text: SEMICONDUCTOR KTC601E TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. B B1 FEATURES C A High pairing property in hFE. 1 2 DIM A 5 A1 Excellent temperature response between these 2 transistor. C A super-minimold package houses 2 transistor.


    Original     		PDF KTC601E KTC601E transistor A1

    KTC601E

    Abstract: No abstract text available
    Text: SEMICONDUCTOR KTC601E TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. B B1 FEATURES C A High pairing property in hFE. 1 2 DIM A 5 A1 Excellent temperature response between these 2 transistor. C A super-minimold package houses 2 transistor.


    Original     		PDF KTC601E KTC601E

    transistor A1

    Abstract: KTA501E
    Text: SEMICONDUCTOR KTA501E TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. B B1 FEATURES C A High pairing property in hFE. 1 2 DIM A 5 A1 Excellent temperature response between these 2 transistor. C A super-minimold package houses 2 transistor.


    Original     		PDF KTA501E A-100 transistor A1 KTA501E

    KTA701E

    Abstract: No abstract text available
    Text: SEMICONDUCTOR KTA701E TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. B B1 FEATURES C A High pairing property in hFE. 1 6 2 5 3 4 A1 Excellent temperature response between these 2 transistor. C A super-minimold package houses 2 transistor.


    Original     		PDF KTA701E KTA701E

    KTA501E

    Abstract: No abstract text available
    Text: SEMICONDUCTOR KTA501E TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. B B1 FEATURES C A ᴌHigh pairing property in hFE. 1 2 DIM A 5 A1 ᴌExcellent temperature response between these 2 transistor. C ᴌA super-minimold package houses 2 transistor.


    Original     		PDF KTA501E KTA501E

    KTC601E

    Abstract: No abstract text available
    Text: SEMICONDUCTOR KTC601E TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. B B1 FEATURES C A ᴌHigh pairing property in hFE. 1 2 DIM A 5 A1 ᴌExcellent temperature response between these 2 transistor. C ᴌA super-minimold package houses 2 transistor.


    Original     		PDF KTC601E KTC601E

    Untitled

    Abstract: No abstract text available
    Text: SEMICONDUCTOR KTA501E TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. B B1 FEATURES C A High pairing property in hFE. 1 2 DIM A 5 A1 Excellent temperature response between these 2 transistor. C A super-minimold package houses 2 transistor.


    Original     		PDF KTA501E

    KTA501E

    Abstract: No abstract text available
    Text: SEMICONDUCTOR KTA501E TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. B B1 FEATURES C A High pairing property in hFE. 1 2 DIM A 5 A1 Excellent temperature response between these 2 transistor. C A super-minimold package houses 2 transistor.


    Original     		PDF KTA501E A-100 KTA501E

    2 transistor

    Abstract: transistor A1 t transistor A1 marking A1 TRANSISTOR
    Text: SEMICONDUCTOR KTA501U TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. B B1 FEATURES ・A super-minimold package houses 2 transistor. 1 5 DIM A A1 B A 2 C ・High pairing property in hFE. A1 C ・Excellent temperature response between these 2 transistor.


    Original     		PDF KTA501U 2 transistor transistor A1 t transistor A1 marking A1 TRANSISTOR

    c2001k

    Abstract: KTC601U 33K-100
    Text: SEMICONDUCTOR KTC601U TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. B B1 FEATURES A super-minimold package houses 2 transistor. 1 5 DIM A A1 B A 2 C High pairing property in hFE. A1 C Excellent temperature response between these 2 transistor.


    Original     		PDF KTC601U c2001k KTC601U 33K-100

    KTA501U

    Abstract: No abstract text available
    Text: SEMICONDUCTOR KTA501U TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. B B1 FEATURES ・A super-minimold package houses 2 transistor. 1 5 DIM A A1 B A 2 C ・High pairing property in hFE. A1 C ・Excellent temperature response between these 2 transistor.


    Original     		PDF KTA501U KTA501U

    KTA501U

    Abstract: No abstract text available
    Text: SEMICONDUCTOR KTA501U TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. B B1 FEATURES ᴌA super-minimold package houses 2 transistor. 5 1 DIM A A1 B A 2 C ᴌHigh pairing property in hFE. A1 C ᴌExcellent temperature response between these 2 transistor.


    Original     		PDF KTA501U KTA501U

    KTC601U

    Abstract: No abstract text available
    Text: SEMICONDUCTOR KTC601U TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. B B1 FEATURES ᴌA super-minimold package houses 2 transistor. 5 1 DIM A A1 B A 2 C ᴌHigh pairing property in hFE. A1 C ᴌExcellent temperature response between these 2 transistor.


    Original     		PDF KTC601U KTC601U

    KTA501U

    Abstract: No abstract text available
    Text: SEMICONDUCTOR KTA501U TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. B B1 FEATURES A super-minimold package houses 2 transistor. 1 5 DIM A A1 B A 2 C High pairing property in hFE. A1 C Excellent temperature response between these 2 transistor.


    Original     		PDF KTA501U KTA501U

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA DTA143EE Preliminary Data Sheet Bias Resistor Transistor PNP Silicon Surface Mount Transistor with Monolithic Bias Resistor Network 3 2 The BRT Bias Resistor Transistor contains a single transistor with a monolithic


    Original     		PDF DTA143EE 416/SC

    Untitled

    Abstract: No abstract text available
    Text: LESHAN RADIO COMPANY, LTD. Bias Resistor Transistor PNP Silicon Surface Mount Transistor with Monolithic Bias Resistor Network LDTA124EET1 This new digital transistor is designed to replace a single device and its external resistor bias network. The BRT Bias Resistor Transistor contains a single transistor with a monolithic bias network


    Original     		PDF LDTA124EET1 SC-89

    KTC811U

    Abstract: No abstract text available
    Text: SEMICONDUCTOR KTC811U TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. B B1 FEATURES A super-minimold package houses 2 transistor. DIM A A1 B 1 6 2 5 3 4 A C High pairing property in hFE. A1 C Excellent temperature response between these 2 transistor.


    Original     		PDF KTC811U KTC811U

    transistor Y2

    Abstract: Y2 TRANSISTOR marking 002 marking Y2 transistor transistor marking y2 marking A1 TRANSISTOR complementary npn-pnp power transistors FMB3946 Supersot 6 Supersot6
    Text: MICDNDUCTDRtm FMB3946 C2 C1 E 1 _ _ _ _ _ Package: SuperSOT-6 Device Marking: .002 g2 - Note: The " . " dot signifies Pin 1 E2 Transistor 1 is NPN device, transistor 2 is PNP device. B1 NPN & PNP Complementary Dual Transistor SuperSOT-6 Surface Mount Package


    OCR Scan     		PDF FMB3946 100mA 100MHz 100MHz 10OuA, fmb3946 lwpPr23 transistor Y2 Y2 TRANSISTOR marking 002 marking Y2 transistor transistor marking y2 marking A1 TRANSISTOR complementary npn-pnp power transistors Supersot 6 Supersot6