Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    TRANSISTOR BA 13 Search Results

    TRANSISTOR BA 13 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR BA 13 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: BCX54/BCX55/BCX56 NPN Plastic-Encapsulate Transistor P b Lead Pb -Free 1. BASE 2. COLLECTOR 3. EMITTER FEATURES High current Low voltage Medium power general purposes Driver stages of audio amplifiers. 1 2 3 SOT-89 MAKING: BCX54:BA BCX54-10:BC BCX54-16:BD


    Original     		BCX54/BCX55/BCX56 OT-89 BCX54 BCX54-10 BCX54-16 BCX55 BCX55-10 BCX52-16 BCX56 BCX56-10 PDF

    rohm 2sd1664

    Abstract: No abstract text available
    Text: Medium Power Transistor 32V,1A 2SB1132 / 2SA1515S / 2SB1237 2SB1132 2SA1515S 4+ − 0.2 1.5 +0.2 −0.1 (1) 0.4 + − 0.1 1.5 + − 0.1 (2) (3) 0.4 +0.1 −0.05 0.5 + − 0.1 0.4 0.1 1.5 + − 0.1 3.0 + − 0.2 5 Abbreviated symbol: BA (2) 14.5 +


    Original     		2SB1132 2SA1515S 2SB1237 2SB1132 2SA1515S 65Max. SC-72 R1102A rohm 2sd1664 PDF

    CRITCHLEY 9003

    Abstract: siemens CNY17-2 TE 2161 CRITCHLEY 9004 BS6317 "Critchley 9003 Critchley step down transformer winding ratio critchley label Critchley transformers
    Text: ICs for Communications Analog Line Interface with the ARCOFI -BA PSB 2161 Application Note 06.96 PSB 2161 Revision History: Current Version: 06.96 Previous Version: Page Page in previous (in current Version Version) Subjects (major changes since last revision)


    Original     		BS6305; BS6317 B11-11 CRITCHLEY 9003 siemens CNY17-2 TE 2161 CRITCHLEY 9004 "Critchley 9003 Critchley step down transformer winding ratio critchley label Critchley transformers PDF

    HRP-5

    Abstract: BA33CC0WT BA33DD0WT BA50DD0WT to252-3-11 hrp5
    Text: Standard Fixed Output LDO Regulator Series Standard Fixed Output LDO Regulators BA□□DD0 Series, BA□□CC0 Series Standard Fixed Output LDO Regulators with Shutdown Switch BA□□DD0W and,BA□□CC0W Series No.09021EAT01 ●General Description Standard Fixed Output LDO Regulators are low-saturation regulators, available for output s up to 2A/1A. ROHM has a wide output


    Original     		09021EAT01 R0039A HRP-5 BA33CC0WT BA33DD0WT BA50DD0WT to252-3-11 hrp5 PDF

    BA033CC0WFP

    Abstract: BA033CC0WT BA33CC0WT BA33DD0WT BA50DD0WT equivalent transistor bc 172 b ROHM 200V 200mA DIODE BACC0Wfp
    Text: Standard LDO Regulators Standard Fixed Output LDO Regulators BA□□DD0 Series, BA□□CC0 Series Standard Fixed Output LDO Regulators with Shutdown Switch BA□□DD0W and,BA□□CC0W Series No.11021ECT01 ●Description Standard Fixed Output LDO Regulators are low-saturation regulators, available for output s up to 2A / 1A. ROHM has a wide


    Original     		11021ECT01 R1120A BA033CC0WFP BA033CC0WT BA33CC0WT BA33DD0WT BA50DD0WT equivalent transistor bc 172 b ROHM 200V 200mA DIODE BACC0Wfp PDF

    P-Channel IGBT

    Abstract: No abstract text available
    Text: Novel SiC MOS-Bipolar Switches for >10 kV Applications Ranbir Singh GeneSiC Semiconductor Inc. 25050 Riding Plaza, Suite 130-801, South Riding, VA 20152 571-265-7535 ph , 703-373-6918 (fax), [email protected] (email). MOS-based gate control is considered a necessity for the applicability of a switch to


    Original     		PDF

    CA2600

    Abstract: 601B AN1027 CA2200 overlay transistor metallization
    Text: Order this document by AN1027/D MOTOROLA SEMICONDUCTOR APPLICATION NOTE AN1027 RELIABILITY/PERFORMANCE ASPECTS OF CATV AMPLIFIER DESIGN Prepared by: Michael D. McCombs “Reliability is the probability of a device performing its purpose adequately for the period of time


    Original     		AN1027/D AN1027 CA2600 601B AN1027 CA2200 overlay transistor metallization PDF

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA -CDISCRETE/OPTOJ D eT I ^ V S S D 9 097250 T O S H I BA DISCRETE/OPTO ¿ Ja ïh ih n 99D 16722 DDlt,72E S | D T - 31- 13 SEMICONDUCTOR TOSHIBA FIELD EFFECT TRANSISTOR 2S I 5 72 SILICON N CHANNEL MOS TYPE TECHNICAL DATA (i-MOS) TENTATIVE INDUSTRIAL APPLICATIONS


    OCR Scan     		300yA PDF

    marking IAY

    Abstract: CMBT5400
    Text: HIGH VOLTAGE TRANSISTOR P -N -P transistor M arking CMBT5400 = K? PA C K A G E O U TLIN E D ETA ILS A LL D IM E N SIO N S IN m m 3.0 0.14 Pin configuration 1 = BA SE 2 = EMITTER 3 = C O LLEC TO R ABSOLUTE MAXIM UM RATIN GS Collector-base voltage open emitter


    OCR Scan     		CMBT5400 marking IAY CMBT5400 PDF

    telefunken ed 32 5000

    Abstract: No abstract text available
    Text: _ BFP81 ViSH A Y ▼ Vishay Telefunken Silicon NPN Planar RF Transistor E lectrostatic sensitive device. O bserve precautions fo r handling. ^ M Applications RF am plifier up to 2 GHz, especially fo r m obile te le ­ phone. Features • Sm all fe ed ba ck capacitance


    OCR Scan     		BFP81 BFP81 20-Jan-99 telefunken ed 32 5000 PDF

    transistor ba 752

    Abstract: No abstract text available
    Text: DATA SHEET MOS FIELD EFFECT POWER TRANSISTORS ¿¿PA! 752 SWITCHING DUAL N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION PACKAGE DIMENSIONS in: millimeter This product is Dual N-Channel MOS Field Ef­ fect Transistor designed for power m anagem ent application of notebook com puters, and Li-ion ba t­


    OCR Scan     		PDF

    Untitled

    Abstract: No abstract text available
    Text: DATA SHEET SILICON TRANSISTOR 2SC3582 MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR DESCRIPTION T h e 2 S C 3 5 8 2 is an NPN ep ita xia l silicon tra n s is to r d e sig n e d fo r use in lo w -no ise and sm all signal a m p lifie rs from V H F ba nd to U H F band.


    OCR Scan     		2SC3582 2SC3582 PDF

    93C24

    Abstract: No abstract text available
    Text: an A M P com pany Wireless Bipolar Power Transistor, 4W 1.6 -1.7 GHz Features • • • • • • • • Symbol Rating '♦ 60 V VCES 60 V Emitter-Base Voltage V EBO 3.0 V 'c 0.7 A 19.5 W ir ' ! d LH] T 1LR ii LMi r - L H lU •HJ' 'f K l BA S i G/B


    OCR Scan     		PH1617-4N 93C24 PDF

    2SC1817

    Abstract: TRANSISTOR PJ
    Text: S El ivi i C O N D U C T O R l TEI' .i l'nTIVTP, RP POWER TRANSISTOR t * 2SC1817 is de sign od for ilF.and VHP Power Amplifier. 'Applications. Most useful for 1 2 - w a t t SSß C i t i z e n s Ba nd Transceiver O u t p u t Stage. 1„ Featui'es / , 15 W min.


    OCR Scan     		2SC1817 12--Watfc Vcc-12 T0-22Ã Vctr-10Y 27MHz TRANSISTOR PJ PDF

    Untitled

    Abstract: No abstract text available
    Text: TriQuint TM Püw ER BAN D SEMICONDUCTOR T 1 P 2 7 0 1 0 1 2 -SP 10 W, 12V, 500 M H z - 3 GHz, P o w e r b a n d p H E M T RF P o w e r T r a n s i s t o r Introduction The T1P2701012-SP is a PO W ER BA N D ™ discrete pHEMT, depletion mode R F Power Transistor designed


    OCR Scan     		T1P2701012-SP 500MHz 10watts 15Watts PDF

    k 219 transistor

    Abstract: Scans-048 DSAGER00063
    Text: Vorläufige technische Daten SSE 216 SSE 2» Süisiu »apn-SpifeaxL8-PXaa&r-Ii gereohb«& Miai&tuEplasfcgeM iise für d i g i t a l e Anwendung. 0,9 - 0.05 mo 13-0,2 Masset «c 0,02 g Sganzwerta» gültig für den Betriebstemperafcurbereich. Maximale loilokfcop-Baais-Bpajmung


    OCR Scan     		III/18/397 k 219 transistor Scans-048 DSAGER00063 PDF

    transistor ck 112

    Abstract: MB3604 B3604
    Text: FU JIT S U HIGH FREQUENCY OPERATIONAL AMPLIFIER I MB3604 1 1 December 1987 Edition 1.0 HIGH FR EQUENCY O PE R A TIO N A L A M P L IFIE R T h e Fu jitsu M B3604 is a m onolithic high frequency operational am plifier fabricated by Fujitsu Bipolar Technology.


    OCR Scan     		MB3604 B3604 B3604 16-LEAD DIP-16P-M04) transistor ck 112 MB3604 PDF

    c 3337

    Abstract: ZTX1048A ZTX 950 TR3E
    Text: *ZETEX ZTX1048A Spice model Last revision 20/01/95 .M OD EL ZTX 1048A NPN IS=13.73E-13 NF=1.0 BF=550 IKF=8.0 VAF=120 + ISE=2.6E-13 NE=1.38 NR=1.0 BR=300 IKR=6 VAR=15 + ISC=1.6E-12 NC=1.4 RB=0.1 RE=0.022 RC=0.010 + CJC=136E-12 CJE=559.1E-12 M JC=0.267 M JE=0.299


    OCR Scan     		ZTX1048A 73E-13 6E-13 6E-12 136E-12 1E-12 600E-12 fcp25 c 3337 ZTX 950 TR3E PDF

    IC 555 timer monostable

    Abstract: timer ic 555 operated relay with time delay VOLTAGE LEVEL RELAY SM 125 220 156 Schematic diagram of DRO ada 8-lead 555 astable
    Text: MIL-N-39510/109A NT ÎÔPlRSEDÎlQ MIL-K-3#510/109 BSAP 27 Juno 1977 MILITART SPRCIFICATIOR MICROCIRCUITS, LIREAR, PRECISXOR TIMERS, MOROLITHIC SILICOR Thia apeoifioation la approved for usa by all Depart* aenta and Ageaolea of ttaa Departaent of Defeass.


    OCR Scan     		ML-H-3S510/109A KIL-M-38510/109 MIL-M-38510. MIL-M-36510 IC 555 timer monostable timer ic 555 operated relay with time delay VOLTAGE LEVEL RELAY SM 125 220 156 Schematic diagram of DRO ada 8-lead 555 astable PDF

    toshiba ccd linear dual shift gate

    Abstract: ccd linear toshiba TCD107
    Text: T O S H I B A -CLOGIC/MEÎIORY} 90 9 7 2 4 8 T OS H I B A b? DE I ciO‘i7E4fl D 0 I H S 7 3 LOGIC/MEMORY CCD IMAGE SENSOR CCD (Charge Coupled Device) TCD107C 67 C 0 9 5 7 3 T-41-55 The TCD107C is a high resolution and high sensitivity 1024 element linear image sensor.


    OCR Scan     		TCD107C T-41-55 TCD107C 14//mx 14//m 14/un toshiba ccd linear dual shift gate ccd linear toshiba TCD107 PDF

    Untitled

    Abstract: No abstract text available
    Text: Transistors Low Frequency Transistor 20V, 5A 2 SB 1386 / 2 SB 1412 / 2 SB 1326 / 2 SB 1436 • E x te rn a l dim ensions (Units: mm) •F e a tu re s 1) LOW VcE(sat). 2SB1412 2SB1386 VcE(sai) = -0 .3 5 V (Typ.) 2 ^2 6 .5 ± 0 .2 (|C/ | B = - 4 A / - 0 . 1 A )


    OCR Scan     		2SB1412 2SB1386 2SD2118 2SD2166. SC-62 3B1326/2SB1436 PDF

    KD224503HB

    Abstract: KS624550 powerex kd kd2245 kd2212 kd221K kd62 kd424520hbaa ks52 ksf220
    Text: POÙJEREX I NC b4E D • 000LSS3 S^S « P R X m t/BÍEX Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 412 925-7272 Powerex, Europe, S.A. 428 Avenue G. Durand, BP107, 72003 Le Mans, France (43) 41.14.14 HIGH-BETA DARLINGTON TRANSISTOR MODULES


    OCR Scan     		000LSS3 BP107, KS524503H KSF22005 KD224503HB KS624550 powerex kd kd2245 kd2212 kd221K kd62 kd424520hbaa ks52 ksf220 PDF

    sch 5127

    Abstract: top 2556 en
    Text: fü HARRIS H A S E M I C O N D U C T O R - 2 5 5 7 130MHz, F o u r Q u a d ra n t, C u rre n t O u tp u t A n a lo g M u ltip lie r N ovem ber 1996 F ea tu res Description • L o w Multiplication Error . . . . . . . 1 .5 % • I n p u t B i a s C u r r e n t s .


    OCR Scan     		130MHz, 130MHz HA-2557 sch 5127 top 2556 en PDF

    Untitled

    Abstract: No abstract text available
    Text: ISO-9001 CERTIFIED BY DESC M S Kl [MNI.UY j o n c HIGH CURRENT, SUPER LOW DROPOUT FIXED VOLTAGE REGULATORS 8 1 7 0 Thompson Road Cicero, N.Y. 13039 ccmce o tn ltc j (315 699-9201 M/L-STD-1772 CERTIFIED FEATURES: • • • • • • • • 5010 Extremely Low Dropout Voltage 0 .4 5 V (9 10 Amps


    OCR Scan     		ISO-9001 M/L-STD-1772 ofK5010-3 PDF