diode BB102
Abstract: RF TRANSISTOR 10GHZ low noise Tv tuner Diagram LG RF VCO 9GHZ 10GHZ Transistor GaAs FET Low Noise NF 1.6dB 2SC4784F ultra high frequency FETs or transistors A08 smd transistor lg tv electronic diagram SMD TRANSISTOR fet
Text: HITACHI SMALL SIGNAL TRANSISTOR HITACHI Small Signal Transistor Products December, 2000 Product Marketing Dept. Multi Purpose Semiconductor Business Division Semiconductor & Integrated Circuits, HITACHI Ltd. HITACHI HITACHI SMALL SIGNAL TRANSISTOR 1. Hitachi neither warrants nor grants licenses of any rights of Hitachi′s or any third party′s patent, copyright,
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ADE-A08-003G
diode BB102
RF TRANSISTOR 10GHZ low noise
Tv tuner Diagram LG RF
VCO 9GHZ 10GHZ
Transistor GaAs FET Low Noise NF 1.6dB
2SC4784F
ultra high frequency FETs or transistors
A08 smd transistor
lg tv electronic diagram
SMD TRANSISTOR fet
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2SD1795
Abstract: ITO-220 TP10K40
Text: SHINDENGEN Darlington Transistor OUTLINE DIMENSIONS 2SD1795 Case : ITO-220 TP10K40 Unit : mm 10A NPN RATINGS Absolute Maximum Ratings Item Storage Temperature Junction Temperature Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage
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2SD1795
ITO-220
TP10K40)
2SD1795
ITO-220
TP10K40
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2SD1790
Abstract: ITO-220
Text: SHINDENGEN Darlington Transistor OUTLINE DIMENSIONS 2SD1790 Case : ITO-220 TP4L6Z Unit : mm 4A NPN RATINGS Absolute Maximum Ratings Item Storage Temperature Junction Temperature Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage
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2SD1790
ITO-220
2SD1790
ITO-220
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2SB1283
Abstract: ITO-220 TP7J10 transistor bb2
Text: SHINDENGEN Darlington Transistor OUTLINE DIMENSIONS 2SB1283 Case : ITO-220 TP7J10 Unit : mm - 7 A PNP RATINGS ●Absolute Maximum Ratings Item Storage Temperature Junction Temperature Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage
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2SB1283
ITO-220
TP7J10)
005IC
-70mA
200mm
2SB1283
ITO-220
TP7J10
transistor bb2
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2SB1282
Abstract: ITO-220 TP4J10
Text: SHINDENGEN Darlington Transistor OUTLINE DIMENSIONS 2SB1282 Case : ITO-220 TP4J10 Unit : mm ± 4A PNP RATINGS ●Absolute Maximum Ratings Item Storage Temperature Junction Temperature Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage
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2SB1282
ITO-220
TP4J10)
Resistan282
-40mA
2SB1282
ITO-220
TP4J10
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2SB1284
Abstract: ITO-220 TP10J10
Text: SHINDENGEN Darlington Transistor OUTLINE DIMENSIONS 2SB1284 Case : ITO-220 TP10J10 Unit : mm - 1 0 A PNP RATINGS ●Absolute Maximum Ratings Item Storage Temperature Junction Temperature Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage
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2SB1284
ITO-220
TP10J10)
005IC
2SB1284
ITO-220
TP10J10
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2SC4053
Abstract: T5V45FX
Text: SHINDENGEN Switching Power Transistor FX Series OUTLINE DIMENSIONS 2SC4053 Case : TO-220 T5V45FX Unit : mm 5A NPN RATINGS ●Absolute Maximum Ratings Item Storage Temperature Junction Temperature Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage
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2SC4053
O-220
T5V45FX)
2SC4053
T5V45FX
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2SA1599
Abstract: ITO-220 TP10T4
Text: SHINDENGEN Switching Power Transistor LSV Series OUTLINE DIMENSIONS 2SA1599 Case : ITO-220 TP10T4 Unit : mm -10A PNP RATINGS Absolute Maximum Ratings Item Storage Temperature Junction Temperature Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage
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2SA1599
ITO-220
TP10T4)
2SA1599
ITO-220
TP10T4
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Untitled
Abstract: No abstract text available
Text: SHINDENGEN Switching Power Transistor FX Series OUTLINE DIMENSIONS 2SC4051 Case : TO-220 T3V45FX Unit : mm 3A NPN RATINGS Absolute Maximum Ratings Item Storage Temperature Junction Temperature Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage
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2SC4051
O-220
T3V45FX)
CollectoC4051
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300V transistor npn .5a
Abstract: No abstract text available
Text: SHINDENGEN Switching Power Transistor FX Series OUTLINE DIMENSIONS 2SC4051 Case : TO-220 T3V45FX Unit : mm 3A NPN RATINGS ●Absolute Maximum Ratings Item Storage Temperature Junction Temperature Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage
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2SC4051
T3V45FX)
O-220
300V transistor npn .5a
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2SC4148
Abstract: ITO-220
Text: SHINDENGEN Switching Power Transistor LSV Series OUTLINE DIMENSIONS 2SC4148 Case : ITO-220 TP7S4 Unit : mm 7A NPN RATINGS Absolute Maximum Ratings Item Storage Temperature Junction Temperature Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage
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2SC4148
ITO-220
2SC4148
ITO-220
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2SC4149
Abstract: ITO-220 TP10S4
Text: SHINDENGEN Switching Power Transistor LSV Series OUTLINE DIMENSIONS 2SC4149 Case : ITO-220 TP10S4 Unit : mm 10A NPN RATINGS Absolute Maximum Ratings Item Storage Temperature Junction Temperature Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage
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2SC4149
ITO-220
TP10S4)
2SC4149
ITO-220
TP10S4
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2SA1880
Abstract: ITO-220 TP10T8
Text: SHINDENGEN Switching Power Transistor HSV Series OUTLINE DIMENSIONS 2SA1880 Case : ITO-220 TP10T8 Unit : mm -10A PNP RATINGS Absolute Maximum Ratings Item Storage Temperature Junction Temperature Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage
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2SA1880
ITO-220
TP10T8)
2SA1880
ITO-220
TP10T8
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2SC4148
Abstract: ITO-220
Text: SHINDENGEN Switching Power Transistor LSV Series OUTLINE DIMENSIONS 2SC4148 Case : ITO-220 TP7S4 Unit : mm 7A NPN RATINGS Absolute Maximum Ratings Item Storage Temperature Junction Temperature Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage
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2SC4148
ITO-220
2SC4148
ITO-220
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BFR134
Abstract: 2322 712 2322-712 Philips fr 153 30 philips resistor 2322 763 Transistor 933 2222 372 transistor J 3305 109 transistor 33 db 2222 379
Text: Product specification Philips Semiconductors BFR134 NPN 7 GHz wideband transistor PHILIPS INTERNATIONAL DESCRIPTION NPN transistor in a plastic SOT37 envelope. It is primarily intended for use in MATV and microwave amplifiers, such as aerial amplifiers, radar
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BFR134
BFR134
2322 712
2322-712
Philips fr 153 30
philips resistor 2322 763
Transistor 933
2222 372
transistor J 3305
109 transistor 33 db
2222 379
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NDS 40-20
Abstract: BUK437-500B DIODE BB2
Text: PHILIPS INTERNATIONAL fc.5E D m 7110flSb □□t.3c121 RS3 • P H I N Philips Semiconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in
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711002b
BUK437-500B
NDS 40-20
BUK437-500B
DIODE BB2
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Untitled
Abstract: No abstract text available
Text: nu. . 0 . J Philips Semiconductors • ^53=131 0 0 2 ^ 2 3 21b « A P X " n AMER PHILIPS/DISCRETE NPN 7 GHz wideband transistor DESCRIPTION Product specification L7E T> BFG135 PINNING NPN silicon planar epitaxial transistor in a plastic SOT223 envelope, intended for wideband
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BFG135
OT223
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NDS 40-20
Abstract: tr/I/NDS 40-20 BUK437-500B
Text: PHILIPS INTERNATIONAL fc.5 E D m 7 1 1 0 flSb □□t.3 Philips Semiconductors c1 2 1 PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies
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7110flSb
BUK437-500B
NDS 40-20
tr/I/NDS 40-20
BUK437-500B
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IC HXJ 2038
Abstract: 1N52398 DB5T tfk 102 cny 70 hxj 2038 rca 40361 transistor rca 40362 TFK 680 CNY 70 Diode Equivalent 1N34A 2n5952 equivalent
Text: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY
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NT 407 F TRANSISTOR
Abstract: Philips CD 303 2222 595 npn 2222 transistor BFG198 MS8002 0450 7N 2222 443 TRANSISTOR D 471 MRA transistor
Text: Philips Sem iconductors • N bbS3R31 AMER 0024SSb 7bS H IA P X P H IL IP S /D IS C R E T E b7E Product specification D NPN 8 GHz wideband transistor DESCRIPTION BFG198 PINNING NPN planar epitaxial transistor in a plastic SOT223 envelope, intended for wideband simplifier applications.
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BFG198
OT223
MS8002
OT223.
NT 407 F TRANSISTOR
Philips CD 303
2222 595
npn 2222 transistor
BFG198
MS8002
0450 7N
2222 443
TRANSISTOR D 471
MRA transistor
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Untitled
Abstract: No abstract text available
Text: PhlHps^Semiconductors_ M b b 5 3 H 31 0 0 313 3 H 314 H APX Product specification NPN 7 GHz wideband transistor BFG195 N AUER PHIL IPS/DISCRETE DESCRIPTION bHE D PINNING NPN transistor in a 4-lead dual-emitter plastic SOT 103 envelope. PIN It is designed for wideband
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BFG195
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2N6128
Abstract: No abstract text available
Text: TYPE 2N6128 N-P-N SILICON POWER TRANSISTOR X <D H HIGH-FREQUENCY, HIGH-POWER TRANSISTOR WITH COMPUTER-DESIGNED ISOTHERMAL GEOMETRY mc < z z2 §8» 40 mJ Reverse Energy Rating with lc - 20 A and 4 V Reverse Bias Isolated Stud Package 2 o m 30 100 W at 50°C Case Temperature
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2N6128
2N6127
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BLV36
Abstract: TRANSISTOR D 471 2222 372 2222 379 RF POWER TRANSISTOR NPN vhf RF push pull power amplifier vhf linear amplifier L15A television vhf linear pulse power amplifier blv36
Text: PHILIPS INTERNATIONAL bSE D D 711002t. DOba^OÔ SE2 • PHIN BLV36 A VHF LINEAR PUSH-PULL POWER TRANSISTOR T w o NPN silicon planar epitaxial transistor sections in one envelope to be used as a push-pull amplifier. This device is prim arily intended for use in linear V H F television transmitters and transposers vision or
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711002t.
BLV36
BLV36
TRANSISTOR D 471
2222 372
2222 379
RF POWER TRANSISTOR NPN vhf
RF push pull power amplifier
vhf linear amplifier
L15A
television
vhf linear pulse power amplifier blv36
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Untitled
Abstract: No abstract text available
Text: central" CJD41C NPN CJ042C PNP Sem iconductor Corp. COMPLEMENTARY SILICON POWER TRANSISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR CJD41C, CJD42C types are Complementary Silicon Power Transistors manufactured by the epitaxial base process, mounted in a surface
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CJD41C
CJ042C
CJD41C,
CJD42C
600mA
300mA
500mA,
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