TRANSISTOR BF 153 Search Results

TRANSISTOR BF 153 Result Highlights (5)

Part	Manufacturer	Description
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns
XPQR8308QB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL
XPQ1R00AQB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL
TK190U65Z	Toshiba Electronic Devices & Storage Corporation	MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL

TRANSISTOR BF 153 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
BFP460 Abstract: TR153 BFP620 P460 P46 transistor Text: BF P460 LNA usi ng BF P46 0 f or GPS 15 75 MHz Applic atio n Technic al Rep ort T R 153 Revision: V1.0 Date: 9 September 2009 RF and Protecti on Devi c es Edition 9 September 2009 Published by Infineon Technologies AG 81726 Munich, Germany 2009 Infineon Technologies AG	Original	PDF	BFP460 1575MHz TR153 TR153 BFP620 P460 P46 transistor
laser diode spice modeling Abstract: laser diode spice model simulation spice ATF 10136 atf-10136 spice MSA-09 ATF13136 mmic a20 MSA-0311 AT-41500 S parameters for ATF 10136 Text: Application Design Tools Services and Applications Literature Hewlett-Packard customers are supported by an Applications Engineering Department. The applications engineering staff investigates circuit applications, design techniques, and device performance. The results of these	Original	PDF	42E-13 04E-1 53E-13 5E-12 87E-2 1E-14) INA-12 900MHz 900E6) laser diode spice modeling laser diode spice model simulation spice ATF 10136 atf-10136 spice MSA-09 ATF13136 mmic a20 MSA-0311 AT-41500 S parameters for ATF 10136
V2bF Abstract: Digital Alarm Clock digital clock with alarm STM-16 TX3S35 TX3S36 TX5S34 Text: TX5S34, TX3S35, TX3S36 2.5 Gb/s Optical Transmitter Module Nanovation’s 1510nm Supervise Receive Photoelectronic Module incorporates a positive-intrinsic-negative PIN diode or a field effect transistor (FET) as well as an IC main amplifier, shaper and equalizer. The product, which can be used for DWDM	Original	PDF	TX5S34, TX3S35, TX3S36 1510nm V2bF Digital Alarm Clock digital clock with alarm STM-16 TX3S35 TX5S34
H124 Abstract: DSUB111 M33 TRANSISTOR RB1010 DIOD003 H124-H125 ws106 T08I3 BF113 H125 Text: AN1598/D H124, 125, 350−352 Translator I/O SPICE Modelling Kit Prepared by: Debbie Beckwith Andrea Diermeier ECL Applications Engineering http://onsemi.com APPLICATION NOTE This application note provides the SPICE information necessary to accurately model system interconnect situations for	Original	PDF	AN1598/D H124 DSUB111 M33 TRANSISTOR RB1010 DIOD003 H124-H125 ws106 T08I3 BF113 H125
H604 Abstract: M-957 SPICE MODEL h607 RX-2 -G T08I h601 transistor IBM POS schematics T5406 Mje 1533 1803e Text: AN1402/D MC10/100H640 Translator Family I/O SPICE Modeling Kit Prepared by: Debbie Beckwith ECL Applications Engineering http://onsemi.com APPLICATION NOTE This application note provides the SPICE information necessary to accurately model system interconnect	Original	PDF	AN1402/D MC10/100H640 MC10H600 H604 M-957 SPICE MODEL h607 RX-2 -G T08I h601 transistor IBM POS schematics T5406 Mje 1533 1803e
S4 78a DIODE schottky Abstract: diode S6 78A BC 148 TRANSISTOR DATASHEET transistors BC 543 TRANSISTOR BC 158 BC 158 is npn or pnp 68W npn TRANSISTOR BC s6 78a baw 92 Text: Selection Guide Table of Contents Page RF-Transistors and MMICs . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 MOS Field-Effect Transistors . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2	Original	PDF	25-RF-BIPOLAR-Transistors. 45-RF-BIPOLAR-Transistors. OT-23 OT-143 S4 78a DIODE schottky diode S6 78A BC 148 TRANSISTOR DATASHEET transistors BC 543 TRANSISTOR BC 158 BC 158 is npn or pnp 68W npn TRANSISTOR BC s6 78a baw 92
2907A PNP bipolar transistors Abstract: diode S6 78A MMIC SOT 363 s1140 DIODE TA 70/04 2907A PNP bipolar transistors datasheet Diode BAW 62 TRANSISTOR BC 158 baw 92 68W SOT Text: Selection Guide Table of Contents Page RF-Transistors and MMICs . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .2 MOS Field-Effect Transistors . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2	Original	PDF	OT-23 OT-143 2907A PNP bipolar transistors diode S6 78A MMIC SOT 363 s1140 DIODE TA 70/04 2907A PNP bipolar transistors datasheet Diode BAW 62 TRANSISTOR BC 158 baw 92 68W SOT
transistor 152 M Abstract: No abstract text available Text: 2N1986 NPN SILICON TRANSISTOR, EPITAXIAL PLANAR TRANSISTOR NPN SILIC IU M , PLAN A R E P ITAXIAL - LF amplification A m plification BF - Switching Commutation v CBO 50V h21E 150m A 60 - 240 V CEsat (30 mA/3 mA) 0,6 V max. Maximum power dissipation Case TO-39 — See outline drawing CB-7 on last pages	OCR Scan	PDF	2IM1986 transistor 152 M
Untitled Abstract: No abstract text available Text: BEE D • ô23b32Q 0Glb732 <= H S I P PNP Silicon RF Transistor BF 550 T ~ % I ~ 1*7_ SIEMENS/ SPCL-1 SEMICONDS For amplifiers In common emitter configuration up to 300 M Hz Specially suitable for mixer applications In AM /FM radios and VHF/TV tuners	OCR Scan	PDF	23b32Q 0Glb732 Q62702-F547 Q62702-F944 153b35Q. 001fc
zq 405-MF Abstract: siemens 30 090 GP 819 SAA 1006 saa 1070 Text: BSE D • Ö23b320 QQlb^BO T M S I P NPN Silicon RF Transistor SIEMENS/ SPCLi SEMICONDS T'SI'I? BF P193 • For low-noise, high-gain amplifiers up to 2 GHz. • For linear broadband amplifiers. • ff = 8 GHz. F = 1.2 dB at 800 MHz. ESD: Electrostatic discharge sensitive device, observe handling precautions!	OCR Scan	PDF	23b320 BFP193 62702-F OT-143 zq 405-MF siemens 30 090 GP 819 SAA 1006 saa 1070
BFW 10 fet Abstract: transistor bf 494 bf 494 transistor BFW 10 A FET transistor bf 184 transistor BF 253 transistor bf 241 BF 184 transistor transistor bf 495 transistor bf 254 Text: 6091788 MICRO ELECTRONICS CORP_ 820 00652 D J 3 /~>7 MICRO ELECTRONICS CORP 02 DE \| bCH17fl0 DDDDbSS 1 V C E SA T CASE Pd (mVY) C Im A) V 'c CEO (V) min max Im A l V CE (V) 167 — — — — 1 3 3 2.5 4 max 'c fT min Cob Cre max N.F. (MHz)	OCR Scan	PDF	0000fc O-72J O-106 O-72G to-02 melf-002. BFW 10 fet transistor bf 494 bf 494 transistor BFW 10 A FET transistor bf 184 transistor BF 253 transistor bf 241 BF 184 transistor transistor bf 495 transistor bf 254
3866S Abstract: BF247 equivalent brochage des circuits integres Triac GK transistor bc 564 BC547E TI Small Signal FET Catalogue bcw 91 transistor SESCO SESCOSEM Text: GENERAL INFORMATION , , v^ INFORMATION GENERALE ” ; V Index Index 3 ' v.»A* K \ a 1 Selection guide Guide de sélection Qualified devices Dispositifs homologués Quality Qualité Symbols Symboles DATA SHEETS NOTICES SILICON SIGNAL TRANSISTORS TRANSISTORS DE SIGNAL AU SILICIUM	OCR Scan	PDF
transistor t2a 82 Abstract: transistor 81 110 w 85 transistor BUT 12 transistor BC 245 BUT76A transistor BF 245 MARKING NJ CODE SOT 23 TRANSISTOR BI 237 marking 712 marking va transistors Text: TELEFUNKEN ELECTRONIC 17E D • f l ^ O O U 000^533 BUT 76 BUT 76 A TTilUliFOiMISlIMelectronic C m to* HichnotoQits T '3 3 -i3 S ilic o n NPN P o w er T ra n sisto rs Applications: Switching mode power supply, inverters, motor control and relay driver Features:	OCR Scan	PDF	T-33-/3 T0126 15A3DIN transistor t2a 82 transistor 81 110 w 85 transistor BUT 12 transistor BC 245 BUT76A transistor BF 245 MARKING NJ CODE SOT 23 TRANSISTOR BI 237 marking 712 marking va transistors
catalogue des transistors bipolaires de puissance Abstract: brochage des circuits integres H3C1-07 LB 124 transistor equivalente transistor A2222 equivalent of transistor bc212 bc 214 BFw-11 terminals SESCOSEM transistor equivalente transistor BC 141 Brochage BCW91 Text: GENERAL INFORMATION , , v^ INFORMATION GENERALE ” ; V Index Index 3 ' v.»A* K \ a 1 Selection guide Guide de sélection Qualified devices Dispositifs homologués Quality Qualité Symbols Symboles DATA SHEETS NOTICES SILICON SIGNAL TRANSISTORS TRANSISTORS DE SIGNAL AU SILICIUM	OCR Scan	PDF

APC UPS CIRCUIT DIAGRAM rs 1500 Abstract: APC UPS es 500 CIRCUIT DIAGRAM APC UPS 650 CIRCUIT DIAGRAM schematic diagram APC back ups XS 1000 TAA550 APC UPS CIRCUIT DIAGRAM UPS APC rs 1000 CIRCUIT diagram UPS APC rs 800 CIRCUIT diagram APC Back ES 500 UPS circuit diagram CIRCUIT DIAGRAM APC UPS 700 Text: 1 2 AF106 G E R M A N IU M MESA PNP VHF MIXER/OSCILLATOR The AF 106 is a germanium mesa PNP transistor in a Jedec TO-72 metal case. It Is particularly designed for use as preamplifier mixer and oscillator up to 260 MHz. ABSOLUTE MAXIMUM RATINGS ^CBO VcEO ^EBO	OCR Scan	PDF	AF106 AF106 APC UPS CIRCUIT DIAGRAM rs 1500 APC UPS es 500 CIRCUIT DIAGRAM APC UPS 650 CIRCUIT DIAGRAM schematic diagram APC back ups XS 1000 TAA550 APC UPS CIRCUIT DIAGRAM UPS APC rs 1000 CIRCUIT diagram UPS APC rs 800 CIRCUIT diagram APC Back ES 500 UPS circuit diagram CIRCUIT DIAGRAM APC UPS 700
tc9137p Abstract: TC9137BP TD6301AP E310 fet tc9137 td6104 td6301 td6301ap toshiba E310D TC9137BF Text: 't O S H ^ T e LECTRONIC „ _ 02 D e \| ciQc17E47~0017ciDci o \| -. — • ; T-5o"n C-MOS LSI FOR STATIC TYPE DIGITAL TUNING SYSTEM. Unit in mm TC9137BP/BF are LSI for PLL synthesizer type digital tuning system with PLL circuit and control « circuit centralized'into one chip.	OCR Scan	PDF	17E47 0017c TC9137BP/BF I7547 TC9137BP/BF TCH7247 D017C tc9137p TC9137BP TD6301AP E310 fet tc9137 td6104 td6301 td6301ap toshiba E310D TC9137BF
8U406 Abstract: T0252 ba05sfp BA05FP BU2879 32segx4com ba1032 BU9716AK bu9716 BA312 Text: Memory/Standard tCs Table of Memory/Standard ICs Table of Memory / Standard ICs Ferroelectric memory Operating voltage range Capacity oils 16k Bit configurato Power supply Product No. (word X bit} BR24CF16F voltage (V) 2,048 X 8 5 Read (V) Write (V) 4.5 -5 .5	OCR Scan	PDF	BR24CF16F voltai99 T0252-5) T0220FP-5-5V T0220FP-5 T0252-5 BA05ST BA05SFP. 8U406 T0252 ba05sfp BA05FP BU2879 32segx4com ba1032 BU9716AK bu9716 BA312
KSC5027 Abstract: No abstract text available Text: KSC5027 NPN SILICON TRANSISTOR HIGH VOLTAGE AND HIGH RELIABILITY i- HIGH SPEED SWITCHING WIDE SOA i T0-220 ABSOLUTE MAXIMUM RATINGS Symbol Characteristic C ollector-Base Voltage V cbo Collector-Em itter Voltage VcEO Emitter-Base Voltage C ollector C urrent DC	OCR Scan	PDF	KSC5027 T0-220 KSC5027
HBF4727A Abstract: ZD 607 - triac ZD 607 - triac circuit hbf 4727a TDA3310 hbf4727 HBF4740 DTL-930 7-stage frequency divider BF479S Text: / h o f t f o f m A T E ^SEMICONDUCTOR “ PRODUCTS 1979/80 I NT RODUCTI ON This publication aims to provide condensed information on the vast range of standard devices currently produced by SGS-ATES. For easy consultation the products have been divided into several sections according to the main product	OCR Scan	PDF
pin diagram of bf 494 transistor Abstract: siemens products transistor Text: SIEMENS SIEGET 25 BFP 490 NPN Silicon RF Transistor Preliminary data • For high power amplifiers • Compression point P-idB = 26 5 dBm at 1.8 GHz maxim, available Gain Gma = 9.5 dB at 1.8 GHz • Transition frequency f j > 17 GHz • Gold metalization for high reliability	OCR Scan	PDF	Q62702-F1721 SCT-595 200mA pin diagram of bf 494 transistor siemens products transistor
cqx 87 Abstract: germanium AEG Thyristor T 558 F TDA 2516 bu208 bf506 la 4430 BF963 TDA1086 transistor bf 175 Text: Page Contents Diodes 8 Transistors 15 Optoelectronic Devices 24 Integrated Circuits 33 1 Contents, alpha-numeric Type Page AA 112 AA113 AA117 AA 118 AA119 AA 132 AA 133 AA 134 AA 137 AA 138 12 12 8 12 12 8 8 8 12 12 BA 111 BA 121 BA 124 BA 125 BA 147/. BA 157	OCR Scan	PDF	AA113 AA117 AA119 BAV17 BAV18 BAV19 BAV20 BAV21 cqx 87 germanium AEG Thyristor T 558 F TDA 2516 bu208 bf506 la 4430 BF963 TDA1086 transistor bf 175
silicon npn planar rf transistor sot 143 Abstract: marking c8 transistor transistor K 2937 BFG10 small RF NPN POWER TRANSISTOR 2.5 GHZ C5 MARKING TRANSISTOR NPN planar RF transistor RF NPN POWER TRANSISTOR 2.5 GHZ RF POWER TRANSISTOR NPN N70 transistor Text: Philips Semiconductors Product specification NPN 2 GHz RF power transistor FEATURES BFG10; BFG10/X PINNING • High power gain PIN • High efficiency DESCRIPTION BFG10 see Fig.1 • Small size discrete power amplifier 1 • 1.9 GHz operating area 2 base	OCR Scan	PDF	BFG10; BFG10/X OT143 7110B2b OT143. 711Dfl2L silicon npn planar rf transistor sot 143 marking c8 transistor transistor K 2937 BFG10 small RF NPN POWER TRANSISTOR 2.5 GHZ C5 MARKING TRANSISTOR NPN planar RF transistor RF NPN POWER TRANSISTOR 2.5 GHZ RF POWER TRANSISTOR NPN N70 transistor
Untitled Abstract: No abstract text available Text: S G S-T HOnSON D7C D \| S T S 3 7 0 0 1 M Ì SD 7 C O S /H IO S INTEGRATED CIRCUIT 7929225 S G S 41C 08964 SEMICONDUC TOR ""CORP o r - ¥ J - 2 j HEX BUFFER • • • • • • • • 1 T T L -LO A D OUTPUT DRIVE C APAB ILITY 2 OUTPUT-DISABLE CONTROLS	OCR Scan	PDF	4503B
ksd 302 250v, 10a Abstract: irf 5630 transistor 2SB 367 IRF 3055 AC153Y transistor ESM 2878 TIP 43c transistor 2sk116 bf199 bd643 Text: 5 transistor 1 A-Z datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-00-0 Dieses Buch ist hinterlegt und urheberrechllich geschutzt. Alle	OCR Scan	PDF	CB-F36c 2SD1642 2SD2182, 2SC4489, -08S- ksd 302 250v, 10a irf 5630 transistor 2SB 367 IRF 3055 AC153Y transistor ESM 2878 TIP 43c transistor 2sk116 bf199 bd643

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TRANSISTOR BF 153 Search Results

TRANSISTOR BF 153 Result Highlights (5)

TRANSISTOR BF 153 Datasheets Context Search

BFP460

laser diode spice modeling

V2bF

H124

H604

S4 78a DIODE schottky

2907A PNP bipolar transistors

transistor 152 M

Untitled

zq 405-MF

BFW 10 fet

3866S

transistor t2a 82

catalogue des transistors bipolaires de puissance

APC UPS CIRCUIT DIAGRAM rs 1500

tc9137p

8U406

KSC5027

HBF4727A

pin diagram of bf 494 transistor

cqx 87

silicon npn planar rf transistor sot 143

Untitled

ksd 302 250v, 10a