BFR540
Abstract: MSB003 BFR540 philips
Text: DISCRETE SEMICONDUCTORS DATA SHEET BFR540 NPN 9 GHz wideband transistor Product specification File under Discrete Semiconductors, SC14 September 1995 Philips Semiconductors Product specification NPN 9 GHz wideband transistor BFR540 The transistor is encapsulated in a
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BFR540
BFR540
MSB003
BFR540 philips
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BFR106
Abstract: MSB003
Text: DISCRETE SEMICONDUCTORS DATA SHEET BFR106 NPN 5 GHz wideband transistor Product specification File under Discrete Semiconductors, SC14 September 1995 Philips Semiconductors Product specification NPN 5 GHz wideband transistor DESCRIPTION BFR106 PINNING NPN silicon planar epitaxial transistor
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BFR106
MSB003
BFR106
MSB003
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BFR540
Abstract: MSB003
Text: DISCRETE SEMICONDUCTORS DATA SHEET BFR540 NPN 9 GHz wideband transistor Product specification Supersedes data of 1995 September 1999 Aug 23 Philips Semiconductors Product specification NPN 9 GHz wideband transistor FEATURES BFR540 The transistor is encapsulated in a
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BFR540
BFR540
125006/03/pp16
MSB003
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Untitled
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS DAT BFR106 NPN 5 GHz wideband transistor Product specification September 1995 NXP Semiconductors Product specification NPN 5 GHz wideband transistor DESCRIPTION BFR106 PINNING NPN silicon planar epitaxial transistor in a plastic SOT23 envelope. It is
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BFR106
MSB003
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BFR106
Abstract: MSB003
Text: DISCRETE SEMICONDUCTORS DATA SHEET BFR106 NPN 5 GHz wideband transistor Product specification September 1995 NXP Semiconductors Product specification NPN 5 GHz wideband transistor DESCRIPTION BFR106 PINNING NPN silicon planar epitaxial transistor in a plastic SOT23 envelope. It is
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BFR106
MSB003
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BFR106
MSB003
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BFR92 application note
Abstract: BFR92 TRANSISTOR p1p datasheet BFT92 transistor P1P 39 TRANSISTOR p1p BFR90 amplifier BFR92 transistor transistor BFR92 BFR90
Text: DISCRETE SEMICONDUCTORS DATA SHEET BFR92 NPN 5 GHz wideband transistor Product specification File under Discrete Semiconductors, SC14 September 1995 Philips Semiconductors Product specification NPN 5 GHz wideband transistor DESCRIPTION BFR92 PINNING NPN transistor in a plastic SOT23
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BFR92
MSB003
BFT92.
BFR92 application note
BFR92
TRANSISTOR p1p datasheet
BFT92
transistor P1P 39
TRANSISTOR p1p
BFR90 amplifier
BFR92 transistor
transistor BFR92
BFR90
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Untitled
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS DAT BFR93AW NPN 5 GHz wideband transistor Product specification Supersedes data of November 1992 1995 Sep 18 NXP Semiconductors Product specification NPN 5 GHz wideband transistor BFR93AW FEATURES DESCRIPTION • High power gain Silicon NPN transistor encapsulated
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BFR93AW
OT323
BFR93AW
BFR93A.
R77/02/pp14
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BFR106
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS DATA SHEET BFR106 NPN 5 GHz wideband transistor Product specification September 1995 NXP Semiconductors Product specification NPN 5 GHz wideband transistor DESCRIPTION BFR106 PINNING NPN silicon planar epitaxial transistor in a plastic SOT23 envelope. It is
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BFR106
BFR106
MSB003
R77/02/pp10
771-BFR106-T/R
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Untitled
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS DAT BFR93A NPN 6 GHz wideband transistor Product specification Supersedes data of September 1995 1997 Oct 29 NXP Semiconductors Product specification NPN 6 GHz wideband transistor BFR93A FEATURES DESCRIPTION • High power gain NPN wideband transistor in a plastic
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BFR93A
BFT93.
MSB003
R77/02/pp13
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Marking M60
Abstract: transistor 11
Text: NSM6056MT1G NPN Transistor with Zener Diode Features • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS http://onsemi.com Compliant Typical Applications NPN Transistor with Zener Diode • Driving Circuit • Switching Applications 6 MAXIMUM RATINGS − NPN TRANSISTOR
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NSM6056MT1G
SC-74
NSM6056M/D
Marking M60
transistor 11
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Untitled
Abstract: No abstract text available
Text: NSM6056MT1G NPN Transistor with Zener Diode Features • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS http://onsemi.com Compliant Typical Applications NPN Transistor with Zener Diode • Driving Circuit • Switching Applications 6 MAXIMUM RATINGS − NPN TRANSISTOR
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NSM6056MT1G
NSM6056M/D
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transistor bfr96
Abstract: BFR96 BFR964 RF NPN POWER TRANSISTOR 3 GHZ 200 watts motorola J50 datasheet for transistor bfr96 BFR96 TRANSISTOR BFR961 RF TRANSISTOR 1.5 GHZ BFR96 motorola
Text: MOTOROLA Order this document by BFR96/D SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon High-Frequency Transistor BFR96 The BFR96 transistor uses the same state–of–the–art microwave transistor chip which features fine–line geometry, ion–implanted arsenic emitters and gold
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BFR96/D
BFR96
BFR96
BFR96/D*
DEVICEBFR96/D
transistor bfr96
BFR964
RF NPN POWER TRANSISTOR 3 GHZ 200 watts
motorola J50
datasheet for transistor bfr96
BFR96 TRANSISTOR
BFR961
RF TRANSISTOR 1.5 GHZ
BFR96 motorola
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BFR91
Abstract: TO50 transistor BFR91 transistor transistor BFR91 300MHZ 800MHZ TO50 package sot37 5v sot37 transistor ph 45
Text: PLANETA BFR91 The RF Line NPN Silicon High-Frequency Transistor DESCRIPTION The BFR91 is an NPN silicon epitaxial transistor designed for low noise amplifier at VHF, UHF and CATV band. It has dynamic range and good current characteristic. This small-signal plastic transistor offers superior quality and
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BFR91
BFR91
KT-29
24max
TO50 transistor
BFR91 transistor
transistor BFR91
300MHZ
800MHZ
TO50 package
sot37 5v
sot37
transistor ph 45
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TO50 transistor
Abstract: BFR91A BFR91A transistor BFR91A transistor datasheet transistor ph 45 SOT-37 300MHZ 800MHZ TO50 package high frequency high power transistor 300mhz
Text: PLANETA BFR91A The RF Line NPN Silicon High-Frequency Transistor DESCRIPTION The BFR91A is an NPN silicon epitaxial transistor designed for low noise amplifier at VHF, UHF and CATV band. It has dynamic range and good current characteristic. This small-signal p lastic transistor offers superior quality and
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BFR91A
BFR91A
KT-29
TO50 transistor
BFR91A transistor
BFR91A transistor datasheet
transistor ph 45
SOT-37
300MHZ
800MHZ
TO50 package
high frequency high power transistor 300mhz
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3F2 SMD Transistor
Abstract: smd code marking rf ft sot23 bfr93a SMD TRANSISTOR MARKING fq TRANSISTOR SMD MARKING CODE dk transistor marking R2p SMD MARKING CODE TRANSISTOR 501 smd TRANSISTOR code marking VP sot23 bft93 die st 9335
Text: DISCRETE SEMICONDUCTORS DATA SHEET BFR93A NPN 6 GHz wideband transistor Product specification Supersedes data of September 1995 File under discrete semiconductors, SC14 1997 Oct 29 Philips Semiconductors Product specification NPN 6 GHz wideband transistor
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BFR93A
BFT93.
BFR93A
MSB003
3F2 SMD Transistor
smd code marking rf ft sot23
SMD TRANSISTOR MARKING fq
TRANSISTOR SMD MARKING CODE dk
transistor marking R2p
SMD MARKING CODE TRANSISTOR 501
smd TRANSISTOR code marking VP sot23
bft93 die
st 9335
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BFR93AW
Abstract: BFR93A
Text: DISCRETE SEMICONDUCTORS DATA SHEET BFR93AW NPN 5 GHz wideband transistor Product specification Supersedes data of November 1992 File under Discrete Semiconductors, SC14 1995 Sep 18 Philips Semiconductors Product specification NPN 5 GHz wideband transistor
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BFR93AW
OT323
BFR93AW
BFR93A.
BFR93A
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BFR96
Abstract: BFR96 TRANSISTOR transistor bfr96
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon High-Frequency Transistor BFR96 The BFR96 transistor uses the same state-of-the-art microwave transistor chip which features fine-line geometry, ion-implanted arsenic emitters and gold top metallization. This transistor is intended for low-to-medium power amplifiers
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BFR96
BFR96
D10b3
BFR96 TRANSISTOR
transistor bfr96
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Transistor C G 774 6-1
Abstract: C G 774 6-1 transistor a 1941 a/Transistor C G 774 6-1 RLF100-11/12/Transistor C G 774 6-1
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon H igh-Frequency Transistor The BFR96 transistor uses the sam e s ta te -o f-th e -a rt microwave transistor chip which features fine -line geometry, ion-im planted arsenic em itters and gold top metallization. This transistor is intended for low -to -m e dium power amplifiers
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BFR96
Transistor C G 774 6-1
C G 774 6-1
transistor a 1941
a/Transistor C G 774 6-1
RLF100-11/12/Transistor C G 774 6-1
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transistor P1P
Abstract: BFR92 transistor bfr92 MSB003 p1p transistor code p1p MW27 choke 3122 108 20150 BFR90 BFT92
Text: Philips Semiconductors M 7 3 ilO flEb D D b lllfl 555 H P H IN Product specification NPN 5 GHz wideband transistor DESCRIPTION £ BFR92 PINNING NPN transistor in a plastic SOT23 envelope primarily intended for use in RF wideband amplifiers and oscillators. The transistor features
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73ilOfigb
BFR92
BFT92.
MSB003
25mitter
711052k
transistor P1P
transistor bfr92
p1p transistor
code p1p
MW27
choke 3122 108 20150
BFR90
BFT92
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BFR93
Abstract: BFR91 BFT93 choke 3122 108 20150 ScansUX40 transistor bfr93 TRANSISTOR B47
Text: Philips Semiconductors 711002t D D b 'iim T3Û PH I N Product specification NPN 5 G Hz w ideband transistor DESCRIPTION £ BFR93 PINNING NPN transistor in a plastic SOT23 envelope primarily intended for use in RF amplifiers and oscillators. The transistor features very low
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711005t
BFR93
ON4186)
BFT93.
711002b
BFR91
BFT93
choke 3122 108 20150
ScansUX40
transistor bfr93
TRANSISTOR B47
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BFR90A
Abstract: BFR92A BFT92 A18 transistor
Text: N AMER PHILIPS/DISCRETE 2 5E D • ^53^31 001fl0b3 4 WÊ BFR92A T X 3 M ? N-P-N 1 GHz WIDEBAND TRANSISTOR N-P-N transistor in a plastic SOT-23 envelope. It is primarily intended for use in v.h.f./u.h.f. broadband amplifiers. The transistor features: • low noise;
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bbS3T31
001fl0b3
BFR92A
OT-23
BFT92
150mV;
BFR90A
BFR92A
BFT92
A18 transistor
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BFR65
Abstract: BFQ34 multi-emitter transistor n 431 transistor Transistor PJ 431
Text: N AMER PHILIPS/DISCRETE 2SE » • btS3T31 GG1ÔQQS 1 BFQ34 is recommended for new design y \ I BFR65 T - S 3 - 0 S - N-P-N H.F. WIDEBAND TRANSISTOR N-P-N multi-emitter silicon transistor in a capstan envelope. The transistor has extremely good intermoduiation properties and high power gain.
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BFQ34
btS3T31
BFR65
BFR65
multi-emitter transistor
n 431 transistor
Transistor PJ 431
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BFR64
Abstract: multi-emitter transistor BFR64 DATA vk200 philips vk200 coil VK-200-10 7Z7Z609 Transistor D 798 BFQ34
Text: N AMER PHILIPS/DISCRETE asE d m bb53i3i aoi?ciT? a B FQ 34 is recommended for new design BFR64 T - 3 3 - 0 S - N-P-N H.F. WIDEBAND TRANSISTOR N-P-N m ulti-em itter transistor in a capstan envelope. The transistor has extrem ely good intermodulation properties and high power gain.
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BFQ34
BFR64
7z72605
BFR64
multi-emitter transistor
BFR64 DATA
vk200 philips
vk200 coil
VK-200-10
7Z7Z609
Transistor D 798
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BFR96
Abstract: No abstract text available
Text: MOTOROLA •I SEMICONDUCTOR TECHNICAL DATA The RF Line NPN S ilico n H igh -Frequ en cy Thransistor The BFR96 transistor uses the same state-of-the-art microwave transistor chip which features fine-line geometry, ion-implanted arsenic emitters and gold top metallization. This transistor is intended for low-to-medium power amplifiers
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BFR96
BFR96
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