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    TRANSISTOR BH PNP Search Results

    TRANSISTOR BH PNP Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    ISL73096EHVF Renesas Electronics Corporation Radiation Hardened Ultra High Frequency NPN/PNP Transistor Arrays Visit Renesas Electronics Corporation
    ISL73096RHVF Renesas Electronics Corporation Radiation Hardened Ultra High Frequency NPN/PNP Transistor Arrays Visit Renesas Electronics Corporation
    ISL73096RHX/SAMPLE Renesas Electronics Corporation Radiation Hardened Ultra High Frequency NPN/PNP Transistor Arrays Visit Renesas Electronics Corporation
    ISL73096EHVX Renesas Electronics Corporation Radiation Hardened Ultra High Frequency NPN/PNP Transistor Arrays Visit Renesas Electronics Corporation

    TRANSISTOR BH PNP Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    transistor smd bh

    Abstract: transistor smd marking bh MARKING SMD PNP TRANSISTOR R marking BH rank R smd marking BH bh marking KEXIN BH SMD MARKING SMD PNP TRANSISTOR TRANSISTOR SMD PNP 1A 2SB1386
    Text: Transistors SMD Type Low Frequency Transistor 2SB1386 Features Low VCE sat . VCE(sat) = -0.35V (Typ.) (IC/IB = -4A / -0.1A) Excellent DC current gain Epitaxial planar type PNP silicon transistor Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit


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    2SB1386 30MHz transistor smd bh transistor smd marking bh MARKING SMD PNP TRANSISTOR R marking BH rank R smd marking BH bh marking KEXIN BH SMD MARKING SMD PNP TRANSISTOR TRANSISTOR SMD PNP 1A 2SB1386 PDF

    TRANSISTOR bH-16

    Abstract: TRANSISTOR bH-10 bh16 transistor marking BH SOT-223 BH 16 transistor BH-16 ON bh-16 marking BH-10 BH-16 SOT BH-16 transistor
    Text: BCP56T1 Series Preferred Devices NPN Silicon Epitaxial Transistor These NPN Silicon Epitaxial transistors are designed for use in audio amplifier applications. The device is housed in the SOT-223 package, which is designed for medium power surface mount applications.


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    BCP56T1 OT-223 OT-223 inch/1000 BCP56T3 inch/4000 BCP53T1 MOUN50 TRANSISTOR bH-16 TRANSISTOR bH-10 bh16 transistor marking BH SOT-223 BH 16 transistor BH-16 ON bh-16 marking BH-10 BH-16 SOT BH-16 transistor PDF

    SOT89 transistor marking 4A

    Abstract: marking 4a sot-89 Marking BH SOT89 BTB1427M3 sot-89 MARKING CODE 4A BTB1386M3 4A SOT89 MARKING CODE
    Text: CYStech Electronics Corp. Spec. No. : C816M3-A Issued Date : 2003.05.26 Revised Date : 2005.11.28 Page No. : 1/5 Low Vcesat PNP Epitaxial Planar Transistor BTB1427M3 Features • Low VCE sat , VCE(sat)=-0.6 V (typical), at IC / IB = -4A / -0.1A • Excellent DC current gain characteristics


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    C816M3-A BTB1427M3 OT-89 UL94V-0 SOT89 transistor marking 4A marking 4a sot-89 Marking BH SOT89 BTB1427M3 sot-89 MARKING CODE 4A BTB1386M3 4A SOT89 MARKING CODE PDF

    marking codes BH sot-23 IN SEMICONDUCTOR

    Abstract: BCX71G marking codes transistors sot-23 transistor marking code 012 PNP Epitaxial Silicon Transistor sot-23 sot-23 marking code BCX71 BCX71H BCX71J BCX71K
    Text: BCX71 SERIES SURFACE MOUNT PNP SILICON TRANSISTOR Central TM Semiconductor Corp. DESCRIPTION: The CENTRAL SEMICONDUCTOR BCX71 Series types are PNP Silicon Transistors manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for general purpose switching and


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    BCX71 BCX71 OT-23 200Hz BCX71G BCX71H BCX71J BCX71K 20-February marking codes BH sot-23 IN SEMICONDUCTOR BCX71G marking codes transistors sot-23 transistor marking code 012 PNP Epitaxial Silicon Transistor sot-23 sot-23 marking code BCX71H BCX71J BCX71K PDF

    BCX71J

    Abstract: BJ MARKING CODE BH Ra BCX71 BCX71G BCX71H BCX71K transistor BG 23 bk sot 23 marking
    Text: BCX71 SERIES w w w. c e n t r a l s e m i . c o m SURFACE MOUNT PNP SILICON TRANSISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR BCX71 Series types are PNP Silicon Transistors manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for general purpose


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    BCX71 OT-23 BCX71H BCX71J BCX71K 20-November BCX71G BCX71J BJ MARKING CODE BH Ra BCX71G BCX71H BCX71K transistor BG 23 bk sot 23 marking PDF

    2SA1117

    Abstract: No abstract text available
    Text: , One. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 Silicon PNP Power Transistor 2SA1117 DESCRIPTION • Collector-Emitter Breakdown Voltage: V(BR)CEO= -200V(Min.) • High Power Dissipation


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    2SA1117 -200V 2SC2608 -50mA; -200V; 2SA1117 PDF

    c815

    Abstract: C815M sot-89 MARKING CODE 4A BTB1386M3 BTD2098M3
    Text: CYStech Electronics Corp. Spec. No. : C815M3 Issued Date : 2005.03.25 Revised Date : 2005.10.20 Page No. : 1/5 Low Vcesat PNP Epitaxial Planar Transistor BTB1386M3 Features • Low VCE sat , VCE(sat)=-0.25 V (typical), at IC / IB = -3A / -60mA • Excellent DC current gain characteristics


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    C815M3 BTB1386M3 -60mA BTD2098M3 OT-89 UL94V-0 c815 C815M sot-89 MARKING CODE 4A BTB1386M3 BTD2098M3 PDF

    Untitled

    Abstract: No abstract text available
    Text: BCX71 SERIES w w w. c e n t r a l s e m i . c o m SURFACE MOUNT PNP SILICON TRANSISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR BCX71 Series types are PNP Silicon Transistors manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for general purpose


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    BCX71 OT-23 BCX71H BCX71J BCX71K 20-November BCX71G PDF

    TRANSISTOR bH-16

    Abstract: TRANSISTOR bH-10 sot-223 body marking A G Q E bh16 transistor BCP53T1 BH bh-16 transistor with marking BH marking BH SOT-223 bh16 BH 16
    Text: BCP56T1 Series Preferred Devices NPN Silicon Epitaxial Transistor These NPN Silicon Epitaxial transistors are designed for use in audio amplifier applications. The device is housed in the SOT-223 package, which is designed for medium power surface mount applications.


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    BCP56T1 OT-223 OT-223 inch/1000 BCP56T3 inch/4000 BCP53T1 BCP56T1/D TRANSISTOR bH-16 TRANSISTOR bH-10 sot-223 body marking A G Q E bh16 transistor BCP53T1 BH bh-16 transistor with marking BH marking BH SOT-223 bh16 BH 16 PDF

    high voltage npn transistor SOT-89

    Abstract: FHBCX53
    Text: ྯ૵਌ NPN Silicon AF Transistor FHBCX56 NPN Silicon AF Transistor ྯ૵਌ DESCRIPTION & FEATURES 概述及特點 1 For AF driver and output stages 2)High collector current 3)Low Collector-Emitter Saturation Voltage 4)Complement types:FHBCX53 PNP) SOT-89


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    FHBCX53 FHBCX56 OT-89 OT-89 FHBCX56 -10mA, 30VIE 150mA 500mA high voltage npn transistor SOT-89 PDF

    diode tfk

    Abstract: tfk 4 132 tfk 540 AM antenna coil bumper BA679 BC558 U4253BM U4253BM-AFP
    Text: U4253BM AM/FM - Antenna Impedance Matching IC * The U4253BM is an integrated AM/FM antenna impedance matching circuit in BICMOS technology. The device is designed in particular for car application and is suitable for windscreen and roof antennas. Gm bH Description


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    U4253BM U4253BM 11-Nov-96 D-74025 diode tfk tfk 4 132 tfk 540 AM antenna coil bumper BA679 BC558 U4253BM-AFP PDF

    Untitled

    Abstract: No abstract text available
    Text: 2SB1386 Transistor, PNP Features Dimensions Units : mm • available in MPT3 (MPT,SOT-89 SC-62) package • package marking: 2SB1386; BH^, where ★ is hFE code • low collector saturation voltage, typically VCE(sat) = -0.35 V for lc/lB = ~4 A/—0.1 A


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    2SB1386 OT-89 SC-62) 2SB1386; 2SB1386 QG14737 2SB1412F5 2SB1412F5 PDF

    42t sot-23

    Abstract: BCX716 BCD Schalter TFK BB transistor BC 458 BCX 458 TFK AF tfk s 154 p am/M29F002BB(45/55/70/90/TC5117800ANJ/BCX716 tfk 715
    Text: l Ü F Gestempeltmit: BCW61ABCW61B BCW61C BCW61D BCX716 BCX71H BCX71J BCX71K Q O lli C l M a rk e d w ith : B» BB IC BD BO BH BJ BK D uW U l DPV11 * B l» A / I Silizium-PNP-Epitaxial-Planar-NF-Transistor Silicon PNP Epitaxial Planar AF Transistor Anwendungen: Vorstufen und Schalter in Dick- und Dünnfilmschaltungen


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    BCW61B BCX716 BCX71J BCW60 42t sot-23 BCD Schalter TFK BB transistor BC 458 BCX 458 TFK AF tfk s 154 p am/M29F002BB(45/55/70/90/TC5117800ANJ/BCX716 tfk 715 PDF

    147 B transistor

    Abstract: Transistor 2SB 148 2SB1386 2sb transistor
    Text: 2SB1386 Transistor, PN P Features Dimensions Units : mm available in MPT3 (MPT,SOT-89 SC-62) package package marking: 2SB1386; BH-*, where ★ is hFE code 2SB1386 (MPT3) low collector saturation voltage, typically VCE(sat) = -0.35 V for lc/lB = -4 A/-0.1A


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    2SB1386 OT-89 SC-62) 2SB1386; 2SB1386 147 B transistor Transistor 2SB 148 2sb transistor PDF

    transistor 224-1 base collector emitter

    Abstract: No abstract text available
    Text: b3E • fctPMTfiS? DGISDTE MITSUBISHI DGTL OM^ ■ MIT3 M ITSUBISHI BIPOLAR DIGITAL ICs M54568L LOGIC 4-U N IT 30mA PNP TRANSISTOR ARRAY DESCRIPTION The M54568L, general purpose transistor array, consists of 4 PNP transistors connected in a commom-emitter configura­


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    M54568L M54568L, M54568L transistor 224-1 base collector emitter PDF

    MCN transistor

    Abstract: BSS44
    Text: SGS-TtiOMSON »eiamtieìMoes BSS44 SILICON NPN TRANSISTOR . SGS-THOMSON PREFERRED SALESTYPE . PNP TRANSISTOR DESCRIPTION The BSS44 is a silicon epitaxial planar PNP transistor in Jedec TO-39 metal case. It is used for high-current switching and power applications


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    BSS44 BSS44 MCN transistor PDF

    transistor c 2053

    Abstract: 2PB710AR 2PB710Q 2PB710R 2PB710S 2PB710 2PB710A 2PB710AQ 2PD602 2PD602A
    Text: Phi IIpa Se mieond ucto rs ^ 711D flB b G Q VOD lfl 3S7 • P H IN PNP general purpose transistor Oblectlve specification 2PB710; 2PB710A PIN CONFIGURATION FEATURES • Large collector current • Low collector-emrtter saturation voltage. _ DESCRIPTION _ 2


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    711Qflgb 2PB710; 2PB710A 2PD602 2PD602A -SC59 2PB710Q: 2PB710R: 2PB710S: 2PB710AQ: transistor c 2053 2PB710AR 2PB710Q 2PB710R 2PB710S 2PB710 2PB710A 2PB710AQ PDF

    2PD601A

    Abstract: No abstract text available
    Text: Philips Semiconductors H 711002b 0070015 b4S HPHIN PNP general purpose transistor Objective specification 2PB709; 2PB709A PIN CONFIGURATION FEATURES • High DC current gain • Low collector-emitter saturation voltage. _ DESCRIPTION _ 2 1 C PNP transistor in a plastic SC59


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    711002b 2PB709; 2PB709A 2PD601 2PD601A -SC59 2PB709Q: 2PB709R: 2PB709S: 2PB709AQ: PDF

    transistor A62

    Abstract: MPSA63 MPSA62 MPS-A63 MPSA64 Transistor MPSA63
    Text: SEMICONDUCTOR TECHNICAL DATA MPSA62/63/64 EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. DARLINGTON TRANSISTOR. FEATURES • Complementary to MPSA13/14. MAXIMUM RATINGS Ta=25°C CHARACTERISTIC SYMBOL RATING UNIT -20 C o lle c to r-B a se MPSA62


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    MPSA62/63/64 MPSA13/14. MPSA62 MPSA63/64 A62/63/64 transistor A62 MPSA63 MPS-A63 MPSA64 Transistor MPSA63 PDF

    Untitled

    Abstract: No abstract text available
    Text: ^ 5 3 ^ 3 1 0031741 bTb Philips Semiconductors PNP 1 GHz video transistor APX Product specification BFQ254; BFQ254/I N AUER PHILIPS/DISCRETE DESCRIPTION bTE D PINNING PNP silicon epitaxial transistor in SOT172A1 and SOT172A3 envelopes, with emitter-ballasting resistors and


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    BFQ254; BFQ254/I OT172A1 OT172A3 BFQ254 bbS3T31 MB3693 MEA335 PDF

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI SEMICONDUCTOR SMALL-SIGNAL TRANSISTOR 2SA1399 FOR GENERAL PURPOSE HIGH CURRENT DRIVE APPLICATION SILICON PNP EPITAXIAL TYPE DESCRIPTION Mitsubishi 2SA1399 is a silicon PNP epitaxial type transistor designed with high OUTLINE DRAWING ¿5.1 MAX


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    2SA1399 2SA1399 2SC3581. 600mA 150MHztyp PDF

    BCV62C

    Abstract: No abstract text available
    Text: SIEMENS PNP Silicon Double Transistors • • • • BCV62 To be used as a current mirror Good thermal coupling and Vbe matching High current gain Low emitter-saturation voltage Type Marking Ordering Code tape and reel BCV 62 A BCV 62 B BCV 62 C 3Js 3Ks


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    BCV62 Q62702-C2158 Q62702-C2159 Q62702-C2160 OT-143 BCV62C PDF

    bf679t

    Abstract: transistor bf 679 Transistor BF 679 t BF679 BF 679 bc 569 BH Rf transistor
    Text: c TELEFUNKEN ELECTRONIC fllC D a^SDD^b 00G542E 7 • A L 6 Û S 679 T • BF 679 T TtllLtltFOJMIXilMl electronic Creative Technologies _ t - 3 / - / r Silicon PNP RF Transistor Applications: Gain controlled UHF/VHF input stages


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    00G542E 569-GS bf679t transistor bf 679 Transistor BF 679 t BF679 BF 679 bc 569 BH Rf transistor PDF

    5Ct transistor

    Abstract: transistor 5bt transistor 5ct transistor marking 297 BC807W BC808W
    Text: Philips Semiconductors Product specification PNP general purpose transistors BC807W; BC808W FEATURES PINNING • High current max. 500 mA • Low voltage (max. 45 V). PIN 1 APPLICATIONS DESCRIPTION base 2 emitter 3 collector General purpose switching and amplification.


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    BC807W; BC808W OT323 BC817W BC818W. BC807W BC807-16W BC807-25W BC807-40W BC808W 5Ct transistor transistor 5bt transistor 5ct transistor marking 297 BC807W BC808W PDF