TRANSISTOR BJ 101 Search Results

TRANSISTOR BJ 101 Result Highlights (5)

Part	Manufacturer	Description
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns
XPQR8308QB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL
XPQ1R00AQB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL
TK190U65Z	Toshiba Electronic Devices & Storage Corporation	MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL

TRANSISTOR BJ 101 Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
BCX71J Abstract: BCX71JLT1 SMD310 g 995 Text: BCX71J General Purpose Transistor PNP Silicon • Moisture Sensitivity Level: 1 MAXIMUM RATINGS Rating http://onsemi.com Symbol Value Unit Collector-Emitter Voltage VCEO –45 Vdc Collector-Base Voltage VCBO –45 Vdc Emitter-Base Voltage VEBO –5.0 Vdc IC	Original	BCX71J r14525 BCX71J/D BCX71J BCX71JLT1 SMD310 g 995	PDF
AN-569 Abstract: BCX71J BCX71JLT1 MPS3905 MPS3906 SMD310 Text: BCX71J General Purpose Transistor PNP Silicon • Moisture Sensitivity Level: 1 MAXIMUM RATINGS Rating http://onsemi.com Symbol Value Unit Collector-Emitter Voltage VCEO –45 Vdc Collector-Base Voltage VCBO –45 Vdc Emitter-Base Voltage VEBO –5.0 Vdc IC	Original	BCX71J r14525 BCX71J/D AN-569 BCX71J BCX71JLT1 MPS3905 MPS3906 SMD310	PDF
8050d transistor Abstract: winbond powerspeech W523X W56000 equivalent of transistor 8050 winbond powerspeech W528X W528X 8050 TRANSISTOR equivalent w528 W562S10 Text: W562XXX DESIGN GUIDE 2-tone Melody+ADPCM Voice Synthesizer BandDirectorTM Family INTRODUCTION The W562xxx is a family of multi-engine speech synthesizers. These synthesizers incorporate part of the following parts into a single chip: a simple 4-bit uC core (including RAM, register file,	Original	W562XXX W529xx W523x W583xx W56xxxx W581xx W528x W56xxx W528x, 8050d transistor winbond powerspeech W523X W56000 equivalent of transistor 8050 winbond powerspeech W528X W528X 8050 TRANSISTOR equivalent w528 W562S10	PDF
FMC6G15US60 Abstract: FMC7G15US60 Text: IGBT FMC6G15US60 Compact & Complex Module General Description Fairchild’s Insulated Gate Bipolar Transistor IGBT power modules provide low conduction and switching losses as well as short circuit ruggedness. They are designed for applications such as motor control, uninterrupted power	Original	FMC6G15US60 E209204 21PM-AA FMC6G15US60 FMC7G15US60	PDF
diode code GW 17 Abstract: FMC7G15US60 Text: IGBT FMC7G15US60 Compact & Complex Module General Description Fairchild’s Insulated Gate Bipolar Transistor IGBT power modules provide low conduction and switching losses as well as short circuit ruggedness. They are designed for applications such as motor control, uninterrupted power	Original	FMC7G15US60 E209204 21PM-AA diode code GW 17 FMC7G15US60	PDF
1SNA607222R0700 Abstract: F0004 60810-1 1SVR405613R1100 1SVR405622R9000 1SVR405613R8200 Text: Interface relays and optocouplers Product group picture 5 5/1 ABB \| Catalog Electronic Products and Relays 2013/2014 \| 2CDC 110 004 C0209 Interface relays and optocouplers Table of contents Interface Relays and Optocouplers Pluggable interface relays 5/3 Table of contents	Original	C0209 1SNA233042R2600 1SNA233043R2700 1SNA233044R2000 1SNA230060R1500 1SNA232060R0300 1SNA233060R0400 1SNA400085R2700 1SNA400145R0700 1SNA400084R2600 1SNA607222R0700 F0004 60810-1 1SVR405613R1100 1SVR405622R9000 1SVR405613R8200	PDF
mallory date code Abstract: McMaster-Carr 12AWG 700B M177 SD3933 st code vishay label Text: SD3933 RF power transistors HF/VHF/UHF N-channel MOSFETs Preliminary Data Features • Gold metallization ■ Excellent thermal stability ■ Common source configuration ■ POUT = 350 W min. with 29 dB gain @ 30 MHz ■ In compliance with the 2002/95/EEC european	Original	SD3933 2002/95/EEC SD3933 200MHz. mallory date code McMaster-Carr 12AWG 700B M177 st code vishay label	PDF
mallory date code Abstract: McMaster-Carr 92196A146 1200 uF 63V capacitor SD3933 arco capacitors capacitor ceramic variable RF MALLORY CAPACITOR date code Mallory Capacitor M177 Text: SD3933 RF power transistors HF/VHF/UHF N-channel MOSFETs Preliminary Data Features • Gold metallization ■ Excellent thermal stability ■ Common source configuration ■ POUT = 350 W min. with 29 dB gain @ 30 MHz ■ In compliance with the 2002/95/EEC European	Original	SD3933 2002/95/EEC SD3933 200MHz. mallory date code McMaster-Carr 92196A146 1200 uF 63V capacitor arco capacitors capacitor ceramic variable RF MALLORY CAPACITOR date code Mallory Capacitor M177	PDF
42t sot-23 Abstract: BCX716 BCD Schalter TFK BB transistor BC 458 BCX 458 TFK AF tfk s 154 p am/M29F002BB(45/55/70/90/TC5117800ANJ/BCX716 tfk 715 Text: l Ü F Gestempeltmit: BCW61ABCW61B BCW61C BCW61D BCX716 BCX71H BCX71J BCX71K Q O lli C l M a rk e d w ith : B» BB IC BD BO BH BJ BK D uW U l DPV11 * B l» A / I Silizium-PNP-Epitaxial-Planar-NF-Transistor Silicon PNP Epitaxial Planar AF Transistor Anwendungen: Vorstufen und Schalter in Dick- und Dünnfilmschaltungen	OCR Scan	BCW61B BCX716 BCX71J BCW60 42t sot-23 BCD Schalter TFK BB transistor BC 458 BCX 458 TFK AF tfk s 154 p am/M29F002BB(45/55/70/90/TC5117800ANJ/BCX716 tfk 715	PDF
tl3101 Abstract: Tesla transistor TL31011 TL3101C 0/TL3101 Text: TL3101I, TL3101C SILICON HALL-EFFECT SWITCH APRIL 1985— REVISED APRIL 1988 • Magnetic-Field Sensing Hall-Effect Input • On-Off Hysteresis • Small Size • Solid-State Technology • Open-Collector Output • Buried Hall-Effect Cell Reduces Threshold	OCR Scan	TL3101I, TL3101C TL3101 Tesla transistor TL31011 0/TL3101	PDF
transistor k 4213 m Abstract: transistor BJ 102 transistor k 4213 TRANSISTOR BJ 101 b206a KT-52 Text: 72 94621 POWEREX INC Tfl » F \| 7 B cm b 2 1 m/vatex 3 \| " D 'Ti S3-J5' KT521203 Powerex, Inc., Hlllts S treet, Yourtgwood, Pennsylvania 15697 412 925-7272 Split-Dual Darlington Transistor Module 30 Am peres/1200 Volts Description Powerex.Spiit-Dual Darlington Transistor	OCR Scan	KT521203 peres/1200 s/1200 transistor k 4213 m transistor BJ 102 transistor k 4213 TRANSISTOR BJ 101 b206a KT-52	PDF
CN0352 Abstract: WD-VP1 B288 CM06 U231 Text: CN0352 Digital CMOS Imager The Gonexant CN0352 Digital CM06 Imager DQ chip is one component of Conexant Universal Serial Bus (USB) camera system. It can also be used as a standalone device for various applications requiring a QF resolution imager. The	OCR Scan	CN0352 10-bit a356Hx292Vframe 352x288) 356x292 354x290 6001DSR1 WD-VP1 B288 CM06 U231	PDF
Avantek uto 1504 Abstract: AM/SSC 9500 ic data Text: AVANTEK ING M ME D AVANTEK B1 llMlSbb 000000=1 Ô B I A V A UTO/UTC 545 Series Thln-Filrri Cascadable Amplifier 10 to 500 MHz ' T 7 4 - 0 c?'O\| FEATURES APPLICATIONS • Frequency Range: 10 to 500 MHz • High Dynamic Range • High Output Power; +19.0 dBm Typ	OCR Scan	9503S Avantek uto 1504 AM/SSC 9500 ic data	PDF
3SK22 Abstract: transistor 3l2 3SK22-Y 10ID nf 0102 3SK2 Text: 3SK SILICON N-CHANNEL JUNCTION FIELD E FFE C T TRANSISTOR O Unit in mm O 058MAX. o FM Tuner and V.H.F Amplifier Applications • W ; HífígjfttfM'SI/» ! ÍS S = >y * ? * s' -* ¿4.95M A X 1 Qps = 20dB Typ. (f=100MHz) IO d NF= 2dB( Typ .) (f=100MHz) SW ;	OCR Scan	100MHz) 100MHz jzf58MAX. 95UAX VES-10 f-200MHz, 3SK22 transistor 3l2 3SK22-Y 10ID nf 0102 3SK2	PDF

TL 188 TRANSISTOR PIN DIAGRAM Abstract: AD559 553C 244 0039J MP 1008 es fsr temperature weighing scale code example AD572 AD572S AD572SD Text: A N A LO G D EVIC E S 12'Bit Successive Approximation Integrated Circuit A/D Converter FEATURES Performance True 12-B it O peration: M ax IMonlineariiry < ± 0 .0 1 2 % Low Gain T .C .: < ± 1 5 p p m /°C A D 5 7 2 B Low Power: 900m W Fast Conversion T im e: < 25/us	OCR Scan	12-Bit 12Bit 15ppm/Â AD572E5) 900mW 25/is AD572S) MIL-STD-883B 5000G TL 188 TRANSISTOR PIN DIAGRAM AD559 553C 244 0039J MP 1008 es fsr temperature weighing scale code example AD572 AD572S AD572SD	PDF
Untitled Abstract: No abstract text available Text: SEC NEC Electronics Inc. ljJ»D7821x Advanced, 8-B it Real-Tim e Control Microcom puters With A /D Converter JRN 2 8 ImT Description □ Four timer-controlled PWM channels The \|aPD78213, \|xPD78214, and H.PD78P214 are high-per formance, 8-bit, single-chip microcomputers. They con	OCR Scan	D7821x aPD78213, xPD78214, PD78P214 aPD7821x	PDF
transistor kf 469 Abstract: transistor HAN 819 diode "jyw" JYW SOT KF 469 JYW diode r778 bjt ce amplifier transistor KF 507 transistor d 2389 Text: ¥ ti¡%HEWLETT ft "KM PACKARD High Performance Isolated Collector Silicon Bipolar Transistor Technical Data HBFP-0420 Features • Ideal for High Gain, Low Noise Applications Surface Mount Plastic Package/SOT-343 SC-70 Outline 4T • Transition Freque ncy	OCR Scan	HBFP-0420 Package/SOT-343 SC-70) HBFP-0420 SC-70 OT-343) 5968-0129E 5968-1684E transistor kf 469 transistor HAN 819 diode "jyw" JYW SOT KF 469 JYW diode r778 bjt ce amplifier transistor KF 507 transistor d 2389	PDF
Untitled Abstract: No abstract text available Text: NEC Electronics Inc. rJAN 2 8 P D 7 8 2 3 X Advanced, 8 -Bit R eal<Time Control M icrocom puters W ith A/D and D/A Converters 199? January 1990 Description The H.PD78233, \|jlPD78234, and p.PD78P238 are highperformance, 8 -bit, single-chip microcomputers. They	OCR Scan	PD78233, jlPD78234, PD78P238 xPD7823x	PDF
IC LM 258 Abstract: No abstract text available Text: r = ± 7 Z S G S - T H O M S O N # M Q (M [iy i ïï[M O (D S l m i 5 8 , a - l m 2 5 8 , a L M 3 5 8 ,A -L M 2 9 0 4 -N E 5 3 2 LOW POWER DUAL OPERATIONAL AMPLIFIERS . INTERNALLY FREQUENCY COMPENSATED. • LARGE DC VOLTAGE GAIN : 100 dB ■ W IDE BANDWIDTH (unity gain : 1.1 MHz (tem	OCR Scan	UE532 -2904-N IC LM 258	PDF
VEB mikroelektronik Abstract: Mikroelektronik Information Applikation mikroelektronik Heft 12 Radio Fernsehen Elektronik 1977 Heft 9 information applikation information applikation mikroelektronik mikroelektronik DDR Halbleiterbauelemente DDR aktive elektronische bauelemente ddr mikroelektronik Heft Text: m B Ik i^ ts je le l-c te n o r iil-c information Applikation m l^ o e le l-c fe n a riil-c Information Applikation H EFT 17 LEISTUNGSELEKTRONIK 4 Die sicheren A rbeitsbereiche Leistungsschalttransistoren VEB MIKROELEKTRONIK „VARLIIE8KNECHT“57AHNSDORP	OCR Scan	57AHNSDORP VEB mikroelektronik Mikroelektronik Information Applikation mikroelektronik Heft 12 Radio Fernsehen Elektronik 1977 Heft 9 information applikation information applikation mikroelektronik mikroelektronik DDR Halbleiterbauelemente DDR aktive elektronische bauelemente ddr mikroelektronik Heft	PDF
m-20ia Abstract: vogt v4 Vogt B U5 3362 Variable Resistor LM301AJ 8pin ic power 22E LM101 LM101A LM201A LM201AH Text: NATL SEMICOND LINEAR SHE D bS01124 0Qbfla47 4 LM101A/LM201A/LM301A Operational Amplifiers General Description The LM101Aseries are general purpose operational amplifi ers which feature improved performance over industry stan dards like the LM709. Advanced processing techniques	OCR Scan	bs011e4 LM101A/LM201A/LM301A LM101A LM709. LM101A/LM201A) LM101A/LM2Q1 Off-34 TL/H/7752-37 TL/H/7752-3S m-20ia vogt v4 Vogt B U5 3362 Variable Resistor LM301AJ 8pin ic power 22E LM101 LM201A LM201AH	PDF
Untitled Abstract: No abstract text available Text: jk A J J Y * JL J w NEC Electronics Inc. \|xPD7821x A d van ced , 8- B it Real-Time C ontrol M ic ro co m p u ters W ith A /D C o n v e rte r Description □ Four timer-controlled PWM channels The jiPD78213, J.PD78214, and f»,PD78P214 are high-performance, 8 -bit, single-chip microcomputers. They con	OCR Scan	xPD7821x jiPD78213, PD78214, PD78P214 xPD7821x addr16ii	PDF
TESLA KY 703 Abstract: TESLA NU 73 service-mitteilungen servicemitteilungen 2 PN 66 145 silizium diode "service-mitteilungen" Tesla Scans-048 Leipzig Text: SERVICE-MITTEILUNGEN V EB IN D U ST R IE V E R T R IE B RU N D FU N K UND FE R N SE H E N r a d i o -television Als Weiterentwicklung des bekannten Rundfunkgerätes SELECT wird aus der Sozia listischen Republik Rumä nien der Heimempfänger R O Y A L AUSGABE:	OCR Scan	III/18/379 TESLA KY 703 TESLA NU 73 service-mitteilungen servicemitteilungen 2 PN 66 145 silizium diode "service-mitteilungen" Tesla Scans-048 Leipzig	PDF
Untitled Abstract: No abstract text available Text: Radiation-Hardened High-Reliability ICs CMM5104/3 CMM5104/3Z High-Reliability, Radiation-Hardened CMOS/SOS 4096-Word by 1-Bit LSI Static RAM T E R M IN A L A S S IG N M E N T 18-Lead D ual-ln-Llne Ceram ic Package Radiation Feature»: Features: • M anufactured on 100K rads Si	OCR Scan	CMM5104/3 CMM5104/3Z 4096-Word 20-ns 18-pin 18-Lead	PDF

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TRANSISTOR BJ 101 Search Results

TRANSISTOR BJ 101 Result Highlights (5)

TRANSISTOR BJ 101 Datasheets Context Search

BCX71J

AN-569

8050d transistor

FMC6G15US60

diode code GW 17

1SNA607222R0700

mallory date code

mallory date code

42t sot-23

tl3101

transistor k 4213 m

CN0352

Avantek uto 1504

3SK22

TL 188 TRANSISTOR PIN DIAGRAM

Untitled

transistor kf 469

Untitled

IC LM 258

VEB mikroelektronik

m-20ia

Untitled

TESLA KY 703

Untitled