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    TRANSISTOR BT 370 Search Results

    TRANSISTOR BT 370 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR BT 370 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: IRFF9120 Data Sheet Title FF9 0 bt A, 0V, m, an- June 1999 4A, 100V, 0.60 Ohm, P-Channel Power MOSFET Features This P-Channel enhancement mode silicon gate power field effect transistor is designed for applications such as switching regulators, switching converters, motor drivers,


    Original     		IRFF9120 PDF

    ph 4148 zener diode

    Abstract: philips zener diode ph 4148 pcf0700p Zener Diode ph 4148 PCA1318P ck2605 pcf0700p/051 philips Pca1318p on4673 Zener Diode 4148
    Text: PHILIPS SEMICONDUCTORS PRODUCT DISCONTINUATION NOTICE NUMBER DN-40 DATED DECEMBER 31, 1998 EXHIBIT 'A' PHILIPS PHILIPS PHILIPS PART NUMBER PKG PART DESCRIPTION LAST TIME LAST TIME REPLACEMENT STATUS 12 NC NUMBER BUY DATE DLVY DATE PART CODE S COMMENTS DISCONTINUED INTEGRATED CIRCUIT PRODUCTS


    Original     		DN-40 74ABT126 74ABT2240 X3G-BZX84-C7V5 X3G-BZX84-C9V1 ph 4148 zener diode philips zener diode ph 4148 pcf0700p Zener Diode ph 4148 PCA1318P ck2605 pcf0700p/051 philips Pca1318p on4673 Zener Diode 4148 PDF

    HIR26-21C

    Abstract: w32 smd transistor w32 smd transistor 143 17-21SYGC/S530-E2/TR8 3A-01-B74-Y9C-A1S1T1DH-AM ELM-1882-UYWB 19-223SURSYGC/S530-A3/E3/TR8 l289 itr8102 w27 smd transistor
    Text: Everlight Electronics was established in 1983 and plays a critical role in the history of Taiwan’s LED industry. It has become the leader in the Taiwan LED packaging industry. Although facing competition from numerous worldwide Optoelectronic suppliers, Everlight


    Original     		CT1003Q43-V2 HIR26-21C w32 smd transistor w32 smd transistor 143 17-21SYGC/S530-E2/TR8 3A-01-B74-Y9C-A1S1T1DH-AM ELM-1882-UYWB 19-223SURSYGC/S530-A3/E3/TR8 l289 itr8102 w27 smd transistor PDF

    sc74750

    Abstract: MSE-200 PESD5VOL4UW KMZ52 kmz51 smd transistor BC557 PBLS1504V 2n5551 smd PMBS3904, PMSS3904 sc7921
    Text: Discretes For Bipolar Transistors and Discrete MOSFETs please check the Power Management Chapter, pages 189-239. For RF Consumer Products please find following tables in the RF Products Chapter from page 252 onwards: RF PIN diodes RF Bandswitch diodes RF Varicap diodes


    Original     		OT346 SC-59) sc74750 MSE-200 PESD5VOL4UW KMZ52 kmz51 smd transistor BC557 PBLS1504V 2n5551 smd PMBS3904, PMSS3904 sc7921 PDF

    IP4223CZ6

    Abstract: power one pmp 7.24 IP4058CX8/LF ip4065cx11 IP4056CX8/LF 2 x 40w amplifier DIODE BAT86 replacement BAS85 Spice KEC SOT-23 bav99 IP4059CX5/LF
    Text: NXP has fully embraced ecological and environmental issues, from maintaining certified environmental management systems General Applications selection guide 2008 to communicating our environmental policy to employees and other stakeholders. Extending this ‘profitable green’ ideal to our


    Original     		OD882 OT883 PVR100AD-B12V PVR100AD-B2V5 PVR100AD-B3V0 PVR100AD-B3V3 PVR100AD-B5V0 PVR100AZ-B12V PVR100AZ-B2V5 PVR100AZ-B3V0 IP4223CZ6 power one pmp 7.24 IP4058CX8/LF ip4065cx11 IP4056CX8/LF 2 x 40w amplifier DIODE BAT86 replacement BAS85 Spice KEC SOT-23 bav99 IP4059CX5/LF PDF

    yx 801 led driver

    Abstract: YX 801 led driver 4 pins yx 801 yx 801 led IC yx 801 led driver FP-032 DM 7652 zy 406 transistor TRANSISTOR s170 PH yx 801 ic
    Text: nd .co m Evaluation Only. Created with Aspose.Pdf.Kit. Copyright 2002-2005 Aspose Pty Ltd bt re SPFD54126B w w w .m 528-channel 6-bit Source Driver with System-on-chip for Color Amorphous TFT-LCDs Preliminary NOV. 20, 2006 Version 0.2 ORISE Technology reserves the right to change this documentation without prior notice. Information provided by ORISE Technology is believed to be


    Original     		SPFD54126B 528-channel yx 801 led driver YX 801 led driver 4 pins yx 801 yx 801 led IC yx 801 led driver FP-032 DM 7652 zy 406 transistor TRANSISTOR s170 PH yx 801 ic PDF

    transistor k702

    Abstract: transistor k703 transistor k79 transistor k215 TRANSISTOR K550 K206 transistor Transistor k822 CN701 transistor k620 transistor k230
    Text: ORDER NO. CPD0603076C0 Notebook Computer CF-18 This is the Service Manual for the following areas. Z …for PCPE /CPE Model No. CF-18JHUZBZZ 2006 Matsushita Electric Industrial Co., Ltd. All rights reserved. Unauthorized copying and distribution is a violation of law.


    Original     		CPD0603076C0 CF-18 CF-18JHUZBZZ K1MN04B00073 K1KA07BA0014 C0EBH0000457 C1DB00001351 XP0431200L UNR9113J0L transistor k702 transistor k703 transistor k79 transistor k215 TRANSISTOR K550 K206 transistor Transistor k822 CN701 transistor k620 transistor k230 PDF

    Untitled

    Abstract: No abstract text available
    Text: N AMER P H I L I P S / D I S CR E T E DhE D m bt,53T31 □015323 7 • RZ1214B125Y r -3 3 - P U L S E D M IC R O W A V E P O W E R T R A N S IS T O R N-P-N silicon microwave power transistor for use in a common-base, class-C wideband amplifier and operating under pulsed conditions in L-band radar applications.


    OCR Scan     		53T31 RZ1214B125Y 14B125 PDF

    bly89a

    Abstract: Transistor bly89a
    Text: N AMER PHILIPS/DISCRETE ObE D 86D 0 1910 • b b S a ^ l Q01414fl 3 D T - i t-u BLY89A JV V.H.F. POWER TRANSISTOR N-P-N epitaxial planar transistor intended for use in class-A, B and C operated mobile, industrial and military transmitters with a supply voltage of 13,5 V. The transistor is resistance stabilized. Every


    OCR Scan     		Q01414fl BLY89A 7Z675I bly89a Transistor bly89a PDF

    Untitled

    Abstract: No abstract text available
    Text: D 000 PWR-82331 and PWR-82333 ILC DATA DEVICE ^ CORPORATION _ SMART POWER 3-PHASE MOTOR DRIVES FEATURES DESCRIPTION APPLICATIONS The PWR-82331 and PWR-82333 are 30A 3-phase motor drive hybrids. The PWR-82331 has a 200V rating and uses MOSFETs in the output stage while the


    OCR Scan     		PWR-82331 PWR-82333 PWR-82333 PWR-82331/333 D-1/92-5M PDF

    brush dc motor control 200v 20a

    Abstract: No abstract text available
    Text: PWR-82340 and PWR-82342 ILC DATA DEVICE CORPORATION_ _ _ SMART POWER H-BRIDGE MOTOR DRIVES FEATURES DESCRIPTION The PWR-82340 and PWR-82342 are 30A H-bridge motor drive hybrids. The PWR-82340 has a 200V rating and uses M O SFETs in the output stage while the


    OCR Scan     		PWR-82340 PWR-82342 PWR-82342 8234X-XX0 PWR-82340/342 brush dc motor control 200v 20a PDF

    transistor f6 13003

    Abstract: equivalent transistor bj 131-6 transistor Eb 13003 BM BB112 smd TRANSISTOR code marking 2F 6n a1211 lg CQY58 BU705 TRANSISTOR 131-6 BJ 026 philips om350
    Text: W IDEBAND TRANSISTORS AND W IDEBAND HYBR ID 1C MODULES page P refa ce. 3 Selection guide Wideband transistors.


    OCR Scan     		SC08b transistor f6 13003 equivalent transistor bj 131-6 transistor Eb 13003 BM BB112 smd TRANSISTOR code marking 2F 6n a1211 lg CQY58 BU705 TRANSISTOR 131-6 BJ 026 philips om350 PDF

    KY2 transistor

    Abstract: transistor ky2 4w-2w hybrid hitachi slic application note transistor bsh 103 zx 55
    Text: O K I Semiconductor MSA4709A Subscriber Line interface Circuit GENERAL DESCRIPTION The MSA4709A is designed to provide BSH functions and to meet PABX transmission performance requirements. This device can replace the hybrid transformet circuit. FEATURES • B Battery feed , S (Supervision), and H (Hybrid) functions integrated on chip.


    OCR Scan     		MSA4709A MSA4709A 30-pin SDJP30-P-4bb 2SB1061 2SD1502 4AE11 KY2 transistor transistor ky2 4w-2w hybrid hitachi slic application note transistor bsh 103 zx 55 PDF

    IVD12

    Abstract: IVD10 4709 bt bt 4709 hitachi slic application note 48V 2w zener diode SCR SN 100
    Text: O K I sem iconductor M SA 4709 / SUBSCRIBER LINE INTERFACE CIRCUIT GENERAL DESCRIPTION The M5A4709 is designed to provide BSH functions and to m eet PA B X transmission perform ance requirements. This device can replace the hybrid transform er circuit. FEATURES


    OCR Scan     		M5A4709 150KH 2SB1061 2SD1502 PABX-MSA4709 IVD12 IVD10 4709 bt bt 4709 hitachi slic application note 48V 2w zener diode SCR SN 100 PDF

    0PI2153

    Abstract: 0PI2253 OPI2153 OPI2253
    Text: OPTEK TECHNOLOGY INC OhE D | b7TflS00 0000530 a Optoelectronics D ivision TRW Electronic Components Group 1987 Cost Saver Product! Call TRW for more information! I i v j n a a m M M t W W Product Bulletin 5206 January 1985 T - H I-S 3 Optically Coupled Isolators


    OCR Scan     		0PI2153, 0PI2253 E5B730 0PI2153 0PI2253 331X8 260ll OPI2153 OPI2253 PDF

    Untitled

    Abstract: No abstract text available
    Text: 5ÖE D TELEDYNE COMPONENTS. Ï ö T i v t i Q S □a ob beja 3 CHQ2907 PNP QUAD AMPLIFIER Ä S i §Ji§ JAN, JANTX, JANTXV General Purpose_ _ _pending PA CKA G E OUTLINE Four PNP Transistors Similar to 2N2907 M19500/558-01 CONNECTION DIAGRAM


    OCR Scan     		CHQ2907 2N2907 M19500/558-01 MIL-S-19500/558 M19500/558-02 CHQ2907 100kHz 02140U PDF

    Untitled

    Abstract: No abstract text available
    Text: PD -91736 International I R Rectifier IRG4RC10KD PRELIMINARY INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Short Circuit Rated UltraFast IGBT Features • S ho rt C ircuit Rated U ltraFast: O ptim ize d for high o p era ting fre q u e n cie s >5.0 kHz , and S hort


    OCR Scan     		IRG4RC10KD -252A ratio233 PDF

    Untitled

    Abstract: No abstract text available
    Text: t e l x d y n e 2 öe co m po nen ts d • QQDbt,Ci0 T ' » 3$ ,*?• .O .0 T -1 3 -2 S CHQ2222 NPN QUAD AMPLIFIER JAN, JANTX, JANTXV pending General Purpose PACKAGE OUTLINE Four NPN Transistors Similar to 2N3467 TO-116 M19600/569-01 CiC Available in Three Hermetic


    OCR Scan     		CHQ2222 2N3467 O-116 M19600/569-01 MIL-S-19500/559 CHQ2222 100kHz MA0214 PDF

    PHILIPS BDX65

    Abstract: BDX65 PHILIPS BDX64
    Text: N AMER PHILIPS/DISCRETE b b S a ^ l 0011=177 1 • BDX65; 65A BDX65B; 65C ESE D T - 3 3 - 2 7 SILICON DARLINGTON POWER TRANSISTORS N-P-N epitaxial base transistors in monolithic Darlington circuit for audio output stages and general amplifier and switching applications; TO-3 envelope. P-N-P complements are BDX64, BDX64A,


    OCR Scan     		BDX65; BDX65B; BDX64, BDX64A, BDX64B BDX64C. BDX65 bb53T31 PHILIPS BDX65 BDX65 PHILIPS BDX64 PDF

    1671B

    Abstract: 2N1671 scr firing 2N1671A 160 germanium transistor 2N 1671 1671C Germanium power 2N1671B MT53B256M32D1NP-062 AUT:C
    Text: Germanium Power Devices Corp. SILICON UNIJUNCTION TRANSISTOR The| GPJ3 Unijunction Transistor is a three terminal device having a stable “N ” type negative resistance charac­ teristic over a wide temperature range. A stable peak point voltage, a low peak point


    OCR Scan     		2N1671 2N1671-2N1671A) 2N1671B) 314737S 1671B scr firing 2N1671A 160 germanium transistor 2N 1671 1671C Germanium power 2N1671B MT53B256M32D1NP-062 AUT:C PDF

    transistor tt 2222

    Abstract: D2l10 BLV33F transistor rf vhf G37 IC
    Text: N AHER PHILIPS/DISCRETE bTE D • b b S B 'J a i J □ G 2 Û R ei 7 144 IAPX BLV33F V.H.F. LINEAR POWER TRANSISTOR N-P-N silicon planar epitaxial transistor prim arily intended fo r use in linear v.h.f. amplifiers fo r television transmitters and transposers.


    OCR Scan     		BLV33F BLV33F ABELV33FILIPS/ 7z88099 transistor tt 2222 D2l10 transistor rf vhf G37 IC PDF

    sx3704

    Abstract: AP239 Transistor 80139 8C547 6C131C IN2222A 2N50B 2N2064 radio AC176 AC126 sft353
    Text: INTERNATIONAL TRANSISTOR EQUIVALENTS GUIDE A LSO BY THE S A M E AUTHOR BP108 International Diode Equivalents Guide BP140 Digital IC Equivalents and Pin Connections BP141 Linear IC Equivalents and Pin Connections ALSO OF INTEREST BP234 Transistor Selector Guide


    OCR Scan     		PDF

    kyl 1020

    Abstract: Darlington transister A4709A 1l400 MSA4709ASS MSA4709 darlington tip pnp transister symbol AL24 MSA4709A
    Text: O K I Semiconductor MSA4709A Subscriber Line Interface Circuit G EN ER A L DESCRIPTIO N The MSA4709A is designed to pro v id e BSH functions a n d to m eet PABX transm ission perform ance requirem ents. T his device can replace the h y b rid tran sfo rm et circuit.


    OCR Scan     		MSA4709A MSA4709A 30-pin 2SB1061 2SD1502 4AE11 72m2md b72M24G kyl 1020 Darlington transister A4709A 1l400 MSA4709ASS MSA4709 darlington tip pnp transister symbol AL24 PDF

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY AMD£I Am79C873 NetPHY -1 10/100 Mbps Ethernet Physical Layer Single-Chip Transceiver with 100BASE-FX Support DISTINCTIVE CHARACTERISTICS • 100BASE-FX direct interface to industry standard electrical/optical transceivers ■ High performance 100 Mbps clock generator


    OCR Scan     		Am79C873 100BASE-FX 10/100BASE-TX 100BASE-TX X3T12TP-PMD PDF