Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    TRANSISTOR BU2525A Search Results

    TRANSISTOR BU2525A Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR BU2525A Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    BU2525

    Abstract: bu2525aw BU2525A
    Text: Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2525AW GENERAL DESCRIPTION New generation, high-voltage, high-speed switching npn transistor in a plastic envelope intended for use in horizontal deflection circuits of large screen colour television receivers up to 32 kHz.


    Original
    BU2525AW OT429 BU2525 bu2525aw BU2525A PDF

    BU2525A

    Abstract: BY228
    Text: Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2525A GENERAL DESCRIPTION New generation, high-voltage, high-speed switching npn transistor in a plastic envelope intended for use in horizontal deflection circuits of large screen colour television receivers up to 32 kHz.


    Original
    BU2525A BU2525A BY228 PDF

    BU2525AF

    Abstract: No abstract text available
    Text: Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2525AF GENERAL DESCRIPTION New generation, high-voltage, high-speed switching npn transistor in a plastic full-pack envelope intended for use in horizontal deflection circuits of large screen colour television receivers up to 32 kHz.


    Original
    BU2525AF OT199 BU2525AF PDF

    Untitled

    Abstract: No abstract text available
    Text: Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2525AX GENERAL DESCRIPTION New generation, high-voltage, high-speed switching npn transistor in a plastic full-pack envelope intended for use in horizontal deflection circuits of large screen colour television receivers up to 32 kHz.


    Original
    BU2525AX OT399 PDF

    bu2525ax

    Abstract: BU2525AF BY228
    Text: Philips Semiconductors Preliminary specification Silicon Diffused Power Transistor BU2525AX GENERAL DESCRIPTION New generation, high-voltage, high-speed switching npn transistor in a plastic full-pack envelope intended for use in horizontal deflection circuits of large screen colour television receivers up to 32 kHz.


    Original
    BU2525AX OT399 bu2525ax BU2525AF BY228 PDF

    bu2525af

    Abstract: BU2525AX BY228 k 30 transistor
    Text: Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2525AX GENERAL DESCRIPTION New generation, high-voltage, high-speed switching npn transistor in a plastic full-pack envelope intended for use in horizontal deflection circuits of large screen colour television receivers up to 32 kHz.


    Original
    BU2525AX bu2525af BU2525AX BY228 k 30 transistor PDF

    BU2525AF

    Abstract: BY228
    Text: Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2525AF GENERAL DESCRIPTION New generation, high-voltage, high-speed switching npn transistor in a plastic full-pack envelope intended for use in horizontal deflection circuits of large screen colour television receivers up to 32 kHz.


    Original
    BU2525AF OT199 BU2525AF BY228 PDF

    BU2532AW

    Abstract: BU2530 bu2532
    Text: Philips Semiconductors Initial specification Silicon Diffused Power Transistor BU2532AW GENERAL DESCRIPTION New generation, high-voltage, high-speed switching npn transistor in a plastic envelope intended for use in horizontal deflection circuits of high resolution monitors.


    Original
    BU2532AW OT429 BU2532AW BU2530 bu2532 PDF

    BU2523AX

    Abstract: No abstract text available
    Text: Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2523AX GENERAL DESCRIPTION New generation, high-voltage, high-speed switching npn transistor in a plastic full-pack envelope intended for use in horizontal deflection circuits of HDTV receivers and pc monitors.


    Original
    BU2523AX BU2523AX PDF

    bu2523af

    Abstract: No abstract text available
    Text: Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2523AF GENERAL DESCRIPTION New generation, high-voltage, high-speed switching npn transistor in a plastic full-pack envelope intended for use in horizontal deflection circuits of HDTV receivers and pc monitors.


    Original
    BU2523AF bu2523af PDF

    BU2525AF

    Abstract: BU2725AX
    Text: Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2725AX GENERAL DESCRIPTION High voltage, high-speed switching npn transistor in a plastic full-pack envelope intended for use in horizontal deflection circuits of colour television receivers. Designed to withstand VCES pulses up to 1700V.


    Original
    BU2725AX OT399 BU2525AF BU2725AX PDF

    bu2727d

    Abstract: BU2725DF BU2527 BU2727 BU2525AF Philips Capacitor
    Text: Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2725DF GENERAL DESCRIPTION High voltage, high-speed switching npn transistor in a plastic full-pack envelope intended for use in horizontal deflection circuits of colour television receivers. Designed to withstand VCES pulses up to 1700V.


    Original
    BU2725DF OT199 bu2727d BU2725DF BU2527 BU2727 BU2525AF Philips Capacitor PDF

    BU2525A

    Abstract: BY228
    Text: Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2525A GENERAL DESCRIPTION New generation, high-voltage, high-speed switching npn transistor in a plastic envelope intended for use in horizontal deflection circuits of large screen colour television receivers up to 32 kHz.


    OCR Scan
    BU2525A 711005b 711062b BU2525A BY228 PDF

    Untitled

    Abstract: No abstract text available
    Text: Product specification Philips Semiconductors Silicon Diffused Power Transistor BU2525AW GENERAL DESCRIPTION New generation, high-voltage, high-speed switching npn transistor in a plastic envelope intended for use in horizontal deflection circuits of large screen colour television receivers up to 32 kHz.


    OCR Scan
    BU2525AW /PD25c PDF

    transistor fn 155

    Abstract: lr transistor t7 BU2525A BY228
    Text: Philips Semiconductors Product specification Silicon diffused power transistor BU2525A GENERAL DESCRIPTION New generation, high-voltage, high-speed switching npn transistor in a plastic envelope intended for use in horizontal deflection circuits of large screen colour television receivers up to 32 kHz.


    OCR Scan
    BU2525A 0077fcj44 711Gfl2b 0077bi45 transistor fn 155 lr transistor t7 BY228 PDF

    Untitled

    Abstract: No abstract text available
    Text: Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2525AF GENERAL DESCRIPTION New generation, high-voltage, high-speed switching npn transistor in a plastic full-pack envelope intended for use in horizontal deflection circuits of large screen colour television receivers up to 32 kHz.


    OCR Scan
    BU2525AF 100-P /PD35C 1E-06 1E-04 1E-02 PDF

    transistor bu2525af

    Abstract: No abstract text available
    Text: Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2525AF GENERAL DESCRIPTION New generation, high-voltage, high-speed switching npn transistor in a plastic full-pack envelope intended for use in horizontal deflection circuits of large screen colour television receivers up to 32 kHz.


    OCR Scan
    BU2525AF transistor bu2525af PDF

    Untitled

    Abstract: No abstract text available
    Text: Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2525AX GENERAL DESCRIPTION New generation, high-voltage, high-speed switching npn transistor in a plastic full-pack envelope intended for use in horizontal deflection circuits of large screen colour television receivers up to 32 kHz.


    OCR Scan
    BU2525AX ThsS25 /PD25c te-06 re-04 PDF

    by22e

    Abstract: dt t3d 13 BU2525A transistor BU2525A
    Text: N AMER PHILIPS/DISCRETE h'ìE D • bbS3T31 DD2ñ3a7 SDT ■ APX Philips Semiconductors Product Specification Silicon Diffused Power Transistor BU2525A GENERAL DESCRIPTION New generation, high-voltage, high-speed switching npn transistor in a plastic envelope intended for use in


    OCR Scan
    bb53T31 BU2525A bbS3T31 by22e dt t3d 13 BU2525A transistor BU2525A PDF

    BU2525AF

    Abstract: PPD-25 PD25 ScansUX30
    Text: Philips Semiconductors Product specification Silicon diffused power transistor BU2525AF GENERAL DESCRIPTION New generation, high-voltage, high-speed switching npn transistor in a plastic full-pack envelope intended for use in horizontal deflection circuits of large screen colour television receivers up to 32 kHz.


    OCR Scan
    BU2525AF 0G77t OT199; D077LS1 PPD-25 PD25 ScansUX30 PDF

    BU2525AX

    Abstract: No abstract text available
    Text: Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2525AX GENERAL DESCRIPTION New generation, high-voltage, high-speed switching npn transistor in a plastic full-pack envelope intended for use in horizontal deflection circuits of large screen colour television receivers up to 32 kHz.


    OCR Scan
    BU2525AX 800emiconductors IE-06 1E-04 1E-02 BU2525AX PDF

    Untitled

    Abstract: No abstract text available
    Text: N AUER PHILIPS/DISCRETE bTE ] • b b S B ' m □□SaB'lB flOB ■ Philips Semiconductors Product Specification Silicon Diffused Power Transistor BU2525AF G EN ERAL DESCRIPTION New generation, high-voltage, high-speed switching npn transistor in a plastic full-pack envelope intended for use in


    OCR Scan
    BU2525AF OT199; PDF

    Untitled

    Abstract: No abstract text available
    Text: N AMER P H I L I P S / D I S C R E T E b'lE D bb 5 3^ 31 □D3fi3fl? SOT H A P X Philips Semiconductors Product Specification Silicon Diffused Power Transistor BU2525A GENERAL DESCRIPTION New generation, high-voltage, high-speed switching npn transistor in a plastic envelope intended for use in


    OCR Scan
    BU2525A bb53cl31 PDF

    Transistor 5331

    Abstract: ELLS 110 BU2525AF LLS3131
    Text: N AMER P H I L I P S / D I S C R E T E bTE » WÊ 1 ^ 5 3 ^ 3 1 Philips Semiconductors □GEfl3tì3 fl03 BIAPX Product Specification Silicon Diffused Power Transistor BU2525AF GENERAL DESCRIPTION New generation, high-voltage, high-speed switching npn transistor in a plastic full-pack envelope intended for use in


    OCR Scan
    BU2525AF bb53T31 G0203tifl OT199; Transistor 5331 ELLS 110 BU2525AF LLS3131 PDF