tip122 tip127 audio board
Abstract: BUK 450-1000 Transistor Selection Guide tip122 tip127 audio amp FJL6920 equivalent car amp TIP41/TIP42 kse13009 TRANSISTOR TIP31 FJL6920
Text: Bipolar Power Transistor Selection Guide Bipolar Power Transistor Selection Guide Analog Discrete Interface & Logic Optoelectronics January 2003 Across the board. Around the world. Bipolar Power Transistor Selection Guide January 2003 Table of Contents
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Power247TM,
tip122 tip127 audio board
BUK 450-1000
Transistor Selection Guide
tip122 tip127 audio amp
FJL6920 equivalent
car amp
TIP41/TIP42
kse13009
TRANSISTOR TIP31
FJL6920
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BUV48I
Abstract: BU808DXI BD699 buv18a BD241CFI transistor 2SA1046 BUW52I BU808DFI equivalent BU724AS 2SA1046
Text: BIPOLAR TRANSISTOR INTRODUCTION TO BIPOLAR CROSS REFERENCE In order to improve our overall service, SGS-THOMSON has introduced a system of preferred transistor sales types. The following cross-reference is intended as a guide to identify sales types that may be suitable
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2N3016
2N3021
2N3022
2N3023
2N3024
2N3025
2N3026
2N3055
2N3076
2N3171
BUV48I
BU808DXI
BD699
buv18a
BD241CFI
transistor 2SA1046
BUW52I
BU808DFI equivalent
BU724AS
2SA1046
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transistor IC 12A 400v
Abstract: 400v 6a transistor 400V 100MA NPN TV power transistor datasheet BU408D HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR
Text: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor BU408D DESCRIPTION •High Voltage: VCEV= 400V Min ·Fast Switching Speed: tf= 0.5 s(Max) ·Low Saturation Voltage: VCE(sat)= 1.0V(Max)@ IC= 6A APPLICATIONS ·Designed for use in horizontal deflection output stages
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BU408D
100mA
transistor IC 12A 400v
400v 6a transistor
400V 100MA NPN
TV power transistor datasheet
BU408D
HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR
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bu408 equivalent
Abstract: BU408 BU406 BU406H
Text: BU406/406H/408 NPN EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE SWITCHING USE IN HORIZONTAL DEFLECTION OUTPUT STAGE TO-220 ABSOLUTE MAXIMUM RATINGS Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Peck Current
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BU406/406H/408
O-220
BU406
BU406H
bu408 equivalent
BU408
BU406
BU406H
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BU406
Abstract: transistor BU406 bu408 250V transistor npn 2a ICM-10 transistor IC 12A 400v
Text: BU406/406H/408 NPN EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE SWITCHING USE IN HORIZONTAL DEFLECTION OUTPUT STAGE TO-220 ABSOLUTE MAXIMUM RATINGS Rating Unit Collector-Base Voltage Characteristic VCBO 400 V Collector-Emitter Voltage VCEO 200 V Emitter-Base Voltage
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BU406/406H/408
O-220
BU406H
BU408
BU406
BU406
transistor BU406
bu408
250V transistor npn 2a
ICM-10
transistor IC 12A 400v
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Untitled
Abstract: No abstract text available
Text: BU406 / 406H / 408 NPN Epitaxial Silicon Transistor Features • High-Voltage Switching • Use In Horizontal Deflection Output Stage 1 1.Base TO-220 2.Collector 3.Emitter Ordering Information Part Number Marking Package Packing Method BU406 BU406 TO-220 3L
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BU406
O-220
BU406
O-220
BU406TU
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Untitled
Abstract: No abstract text available
Text: BU406/406H/408 NPN Epitaxial Silicon Transistor Features • High Voltage Switching • Use In Horizontal Deflection Output Stage TO-220 1 1.Base Absolute Maximum Ratings Symbol 2.Collector TC = 25°C unless otherwise noted Parameter VCBO VCEO Collector-Base Voltage
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BU406/406H/408
O-220
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Untitled
Abstract: No abstract text available
Text: BU406/406H/408 NPN Epitaxial Silicon Transistor Features • High Voltage Switching • Use In Horizontal Deflection Output Stage TO-220 1 1.Base Absolute Maximum Ratings Symbol 2.Collector TC = 25°C unless otherwise noted Parameter VCBO VCEO Collector-Base Voltage
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BU406/406H/408
O-220
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PDF
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Untitled
Abstract: No abstract text available
Text: BU406/406H/408 BU406/406H/408 High Voltage Switching • Use In Horizontal Deflection Output Stage TO-220 1 1.Base 2.Collector 3.Emitter NPN Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO Parameter Collector-Base Voltage
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BU406/406H/408
O-220
95MAX.
54TYP
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transistor BU406
Abstract: BU406 BU406H BU408
Text: BU406/406H/408 BU406/406H/408 High Voltage Switching • Use In Horizontal Deflection Output Stage TO-220 1 1.Base 2.Collector 3.Emitter NPN Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO Parameter Collector-Base Voltage
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BU406/406H/408
O-220
transistor BU406
BU406
BU406H
BU408
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bu408
Abstract: BU406
Text: BU406/406H/408 BU406/406H/408 High Voltage Switching • Use In Horizontal Deflection Output Stage 1 TO-220 1.Base 2.Collector 3.Emitter NPN Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Value Units VCBO Symbol Collector-Base Voltage
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BU406/406H/408
O-220
bu408
BU406
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bu406 cross
Abstract: BU406TU
Text: BU406/406H/408 BU406/406H/408 High Voltage Switching • Use In Horizontal Deflection Output Stage TO-220 1 1.Base 2.Collector 3.Emitter NPN Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO Parameter Collector-Base Voltage
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BU406/406H/408
O-220
bu406 cross
BU406TU
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iC5A
Abstract: BU406 BU408 transistor BU406 250V transistor npn 2a BU406H npn switching transistor Ic 5A
Text: BU406/406H/408 NPN EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE SWITCHING USE IN HORIZONTAL DEFLECTION OUTPUT STAGE TO-220 ABSOLUTE MAXIMUM RATINGS Ta=25°C C Characteristic Symbol Rating Unit VCBO VCEO VEBO IC ICM IB PC Tj Tstg 400 200 6 7 10 4 60 150 -65~150
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BU406/406H/408
O-220
BU406
BU406H
BU408
iC5A
BU406
BU408
transistor BU406
250V transistor npn 2a
BU406H
npn switching transistor Ic 5A
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fjaf6812
Abstract: tip41 darlington fjaf6920 BUT12(A)F KSA1010 transistor bd140-15 bu408 equivalent FJL6920 equivalent fjl6820 FJL6920
Text: Discrete Bipolar Power Transistor – General Purpose Part Number IC A VCEO (V) VCBO (V) VEBO (V) PC (W) hFE VCE (sat) Min Max @ IC (A) Typ (V) Max (V) TO-126 NPN Configuration KSC2682 0.1 180 180 5 8 100 320 0.01 0.12 0.5 KSC3502 0.1 200 200 5 5 40 320
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O-126
KSC2682
KSC3502
KSC2258
KSC2258A
KSC3503
KSC3953
KSC2688
BD150
KSC5305D
fjaf6812
tip41 darlington
fjaf6920
BUT12(A)F
KSA1010
transistor bd140-15
bu408 equivalent
FJL6920 equivalent
fjl6820
FJL6920
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b12a transistor
Abstract: BU408 BU406 BU407 407 transistor
Text: Data Sheet Central" Sem iconductor Corp. BU406 BU407 BU408 NPN SILICON POWER TRANSISTOR 145 Adams Avenue, Hauppauge, NY 11788 USA Tel: 631 435-1110 • Fax: (631) 435-1824 JEDEC T0-220 CASE Manufacturers of World Class Discrete Semiconductors DESCRIPTION
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BU406
BU407
BU408
T0-220
bu406
bu407
80typ
b12a transistor
BU408
407 transistor
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3EMN
Abstract: BU407D bu406d BII407D BU408D bu406d.bii407d
Text: NPN POWER TRANSISTOR NPN BU406D BU407D These devices are high voltage,high speed transistors for hor izontal deflection output stages of TV's and C7V"s. circuits. FEATURES: * Collector-Emitter Sustaining Voltage VCEV = 330 V Min. - BU407D = 400 V (Min.) - BU406D, BU408D
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BU407D
BU406D,
BU408D
BU406D
BU408D
BU407D
BII407D
3EMN
BII407D
bu406d.bii407d
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BU407D
Abstract: ND06 BU-406D bu406d BII407D BU408D *U407D
Text: /zA MOS PEC NPN POWER TRANSISTOR NPN BU406D BU407D These devices are high voltage,high speed transistors for hor izontal deflection output stages of TV's and C7V"s. circuits. FEATURES: * Collector-Emitter Sustaining Voltage VCEV = 330 V Min. - BU407D = 400 V (Min.) - BU406D, BU408D
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BU407D
BU406D,
BU408D
BU406D
BU408D
BU407D
ND06
BU-406D
BII407D
*U407D
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bu408
Abstract: BU406
Text: BU406/406H/408 NPN EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE SWITCHING USE IN HORIZONTAL DEFLECTION OUTPUT STAGE TO -220 ABSOLUTE MAXIMUM RATINGS Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Peck Current
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BU406/406H/408
BU406H
BU408
BU406
BU408
BU406
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transistor BU408
Abstract: No abstract text available
Text: BU406/406H/408 NPN EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE SWITCHING USE IN HORIZONTAL DEFLECTION OUTPUT STAGE TO-220 ABSOLUTE MAXIMUM RATINGS Ta= 25°C Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current
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BU406/406H/408
O-220
7Tb4142
transistor BU408
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Untitled
Abstract: No abstract text available
Text: BU406/406H/408 NPN EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE SWITCHING USE IN HORIZONTAL DEFLECTION OUTPUT STAGE ABSOLUTE MAXIMUM RATINGS Rating Unit Collector-Base Voltage Characteristic V cbO Symbol 400 V Collector-Emltter Voltage VcEO 200 V Emitter-Base Voltage
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BU406/406H/408
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bu406
Abstract: bu408 transistor BU408
Text: BU406/406H/408 NPN EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE SWITCHING USE IN HORIZONTAL DEFLECTION OUTPUT STAGE ABSOLUTE MAXIMUM RATINGS Characteristic Symbol Rating Unit Collector-Base Voltage V cBO 400 V Collector-Emitter Voltage V cEO 200 V Emitter-Base Voltage
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BU406/406H/408
BU408
BU406
BU406H
BU408
bu406
transistor BU408
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PDF
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Untitled
Abstract: No abstract text available
Text: BU406/406H/408 NPN EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE SWITCHING USE IN HORIZONTAL DEFLECTION OUTPUT STAGE ABSOLUTE MAXIMUM RATINGS Rating Unit C ollector-Base Voltage C haracteristic VcBO Sym bol 400 V C ollector-E m itter Voltage VcEO 200 V Em itter-Base Voltage
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BU406/406H/408
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C 3311 transistor
Abstract: NPN Transistor 5A 400V T-33-11 KSD5017 transistor BU408 samsung tv KSD5017 BU406 BU406H power TRANSISTOR 800V 5A
Text: SAMSUNG S E M I C O N DUCTOR 14E INC D | 7*^4145 G0Q7bfla b NPN TRIPLE DIFFUSED PLANAR SILICON TRANSISTOR KSD5017 T-33-11 COLOR TV HORIZONTAL'OUTPUT APPLICATIONS T O *3P F High Collector-Base VWtage VCeo=1500V ABSOLUTE MAXIMUM RATINGS (Ta=25°C ) Characteristic
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KSD5017
G007baa
-55-V150
T-33-11
BU406H
BU408
G007bÃ
BU406/406H/408
C 3311 transistor
NPN Transistor 5A 400V
T-33-11
KSD5017 transistor
BU408
samsung tv
KSD5017
BU406
BU406H
power TRANSISTOR 800V 5A
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BU406
Abstract: BU408 250V transistor npn 2a BU406H 250v 5a npn transistor Vbe 1
Text: BU406/406H/408 NPN EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE SWITCHING USE IN HORIZONTAL DEFLECTION OUTPUT STAGE ABSOLUTE MAXIMUM RATINGS Rating Unit C ollector-Base Voltage C haracteristic V cbO Sym bol 400 V C ollector-E m ltter Voltage V cE O 200 V Em itter-Base Voltage
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BU406/406H/408
BU406
BU408
250V transistor npn 2a
BU406H
250v 5a npn
transistor Vbe 1
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