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    TRANSISTOR BV4 Search Results

    TRANSISTOR BV4 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR BV4 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    BV45

    Abstract: No abstract text available
    Text: BV45 NPN Silicon Epitaxial Planar Transistor High voltage fast switching power transistor TO-92 Plastic Package Weight approx. 0.19g Absolute Maximum Ratings Ta = 25 OC Parameter Symbol Value Unit Collector Base Voltage VCBO 700 V Collector Emitter Voltage


    Original     		PDF

    BV4 transistor

    Abstract: TRANSISTOR BV3 BV4 pnp MMBTSB624LT1
    Text: MMBTSB624LT1 PNP Silicon Epitaxial Planar Transistor For use in small type equipments, especially recommended or hybrid circuit and other applications The transistor is subdivided into five groups BV1, BV2, BV3, BV4 and BV5, according to its DC current gain.


    Original     		PDF MMBTSB624LT1 OT-23 100mA 700mA 700mA, PW350 BV4 transistor TRANSISTOR BV3 BV4 pnp MMBTSB624LT1

    TRANSISTOR BV3

    Abstract: No abstract text available
    Text: MMBTSB624 PNP Silicon Epitaxial Planar Transistor For use in small type equipments, especially recommended or hybrid circuit and other applications The transistor is subdivided into five groups BV1, BV2, BV3, BV4 and BV5, according to its DC current gain.


    Original     		PDF MMBTSB624 OT-23 100mA 700mA 700mA, TRANSISTOR BV3

    BV45

    Abstract: No abstract text available
    Text: BV45 NPN Silicon Epitaxial Planar Transistor High voltage fast switching power transistor TO-92 Plastic Package Weight approx. 0.19g Absolute Maximum Ratings Ta = 25 OC Parameter Symbol Value Unit Collector Base Voltage VCBO 700 V Collector Emitter Voltage


    Original     		PDF

    BV4 transistor

    Abstract: transistor BV4
    Text: MMBTSB624LT1 PNP Silicon Epitaxial Planar Transistor For use in small type equipments, especially recommended or hybrid circuit and other applications The transistor is subdivided into five groups BV1, BV2, BV3, BV4 and BV5, according to its DC current gain.


    Original     		PDF MMBTSB624LT1 OT-23 100mA 700mA 700mA, PW350 BV4 transistor transistor BV4

    TRANSISTOR BV3

    Abstract: BV4 transistor BV4 pnp bv-1 transistor bV2
    Text: MMBTSB624 PNP Silicon Epitaxial Planar Transistor For use in small type equipments, especially recommended or hybrid circuit and other applications The transistor is subdivided into five groups BV1, BV2, BV3, BV4 and BV5, according to its DC current gain.


    Original     		PDF MMBTSB624 OT-23 100mA 700mA 700mA, TRANSISTOR BV3 BV4 transistor BV4 pnp bv-1 transistor bV2

    D1802

    Abstract: TRANSISTOR BV3 2SB624A 2SD596A nec marking power amplifier
    Text: DATA SHEET SILICON TRANSISTOR 2SB624A AUDIO FREQUENCY POWER AMPLIFIER PNP SILICON EPITAXIAL TRANSISTOR MINI MOLD FEATURES PACKAGE DRAWING Unit: mm • Complementary to NEC 2SD596A NPN Transistor. • High DC Current Gain: hFE = 200 TYP. (VCE = −1.0 V, IC = −100 mA)


    Original     		PDF 2SB624A 2SD596A D1802 TRANSISTOR BV3 2SB624A nec marking power amplifier

    2SB624

    Abstract: 2SD596
    Text: 2SB624 SILICON TRANSISTOR AUDIO FREQUENCY POWER AMPLIFIER SOT-23 3 PNP SILICON EPITAXIAL TRANSISTOR MINI MOLD 1 DESRIPTION 2 The2SB624 is designed for use in small type equipements especially 1. 1.BASE 2.EMITTER 3.COLLECTOR mended for hybrid integrated circuit and other applications.


    Original     		PDF 2SB624 OT-23 The2SB624 -100mA) 2SD596 2SB624

    sot-23 bv2

    Abstract: 2SB624 2SD596
    Text: 2SB624 SILICON TRANSISTOR AUDIO FREQUENCY POWER AMPLIFIER SOT-23 3 PNP SILICON EPITAXIAL TRANSISTOR MINI MOLD 1 DESRIPTION 2 The2SB624 is designed for use in small type equipements especially 1. 1.BASE 2.EMITTER 3.COLLECTOR mended for hybrid integrated circuit and other applications.


    Original     		PDF 2SB624 OT-23 The2SB624 -100mA) 2SD596 sot-23 bv2 2SB624

    BV45

    Abstract: FLUORESCENT LAMPS CFLS marking 131-6 to92 STBV45 STBV45-AP 131-6 to92
    Text: STBV45 HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR Ordering Code Marking Package / Shipment STBV45 BV45 TO-92 / Bulk STBV45-AP BV45 TO-92 • ■ ■ ■ / Ammopack HIGH VOLTAGE CAPABILITY LOW SPREAD OF DYNAMIC PARAMETERS MINIMUM LOT-TO-LOT SPREAD FOR


    Original     		PDF STBV45 STBV45-AP BV45 FLUORESCENT LAMPS CFLS marking 131-6 to92 STBV45 STBV45-AP 131-6 to92

    BV45

    Abstract: marking 131-6 to92 STBV45 STBV45-AP FLUORESCENT LAMPS CFLS
    Text: STBV45 HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR Table 1: Order Codes Ordering Code Marking Package / Shipment STBV45 BV45 TO-92 / Bulk STBV45-AP BV45 TO-92 • ■ ■ ■ / Ammopack HIGH VOLTAGE CAPABILITY LOW SPREAD OF DYNAMIC PARAMETERS MINIMUM LOT-TO-LOT SPREAD FOR


    Original     		PDF STBV45 STBV45-AP BV45 marking 131-6 to92 STBV45 STBV45-AP FLUORESCENT LAMPS CFLS

    2SB624

    Abstract: No abstract text available
    Text: BL Galaxy Electrical Production specification Silicon Epitaxial Planar Transistor FEATURES z Pb High DC current gain.hFE: 200TYP Lead-free VCE=-1.0V,IC=-100mA z 2SB624 Complimentary to the 2SD596. APPLICATIONS z Audio frequency amplifier. z Switching appilication.


    Original     		PDF 2SB624 200TYP -100mA) 2SD596. OT-23 BL/SSSTC014 2SB624

    sot-23 bv4

    Abstract: 2SB624 BV4 sot23 TRANSISTOR BV3 marking BV4 SOT23 BV2 2SD596 BV3 marking BV5 SOT-23 transistor BV4
    Text: BL Galaxy Electrical Production specification Silicon Epitaxial Planar Transistor FEATURES z Pb High DC current gain.hFE: 200TYP Lead-free VCE=-1.0V,IC=-100mA z 2SB624 Complimentary to the 2SD596. APPLICATIONS z Audio frequency amplifier. z Switching appilication.


    Original     		PDF 2SB624 200TYP -100mA) 2SD596. OT-23 BL/SSSTC014 sot-23 bv4 2SB624 BV4 sot23 TRANSISTOR BV3 marking BV4 SOT23 BV2 2SD596 BV3 marking BV5 SOT-23 transistor BV4

    bv42

    Abstract: STBV42D st marking code
    Text: STBV42D High voltage fast-switching NPN power transistor Preliminary data Features • High voltage capability ■ Low spread of dynamic parameters ■ Very high switching speed ■ Integrated free-wheeling diode Application ■ Compact fluorescent lamps CFLs


    Original     		PDF STBV42D BV42D bv42 STBV42D st marking code

    BV45

    Abstract: to-92a JESD97 STBV45 STBV45-AP STBV45G STBV45G-AP TO-92AP
    Text: STBV45 High voltage fast-switching NPN power transistor Features • High voltage capability ■ Low spread of dynamic parameters ■ Minimum lot-to-lot spread for reliable operation ■ Very high switching speed Applications ■ Compact fluorescent lamps CFLs


    Original     		PDF STBV45 O-92AP STBV45G STBV45G-AP BV45 to-92a JESD97 STBV45 STBV45-AP TO-92AP

    bv42 transistor

    Abstract: bv42 BV42G BV42 ST Transistor STBV42 STBV42G-AP JESD97 STBV42-AP STBV42G
    Text: STBV42 High voltage fast-switching NPN power transistor Features • High voltage capability ■ Low spread of dynamic parameters ■ Minimum lot-to-lot spread for reliable operation ■ Very high switching speed Applications ■ Compact fluorescent lamps CFLs


    Original     		PDF STBV42 O-92AP STBV42G STBV42G-AP bv42 transistor bv42 BV42G BV42 ST Transistor STBV42 JESD97 STBV42-AP

    bv42

    Abstract: bv42 transistor STBV42G BV42G st codeS to-92a STBV42 STBV42-AP JESD97 STBV42G-AP
    Text: STBV42 High voltage fast-switching NPN power transistor Features • High voltage capability ■ Low spread of dynamic parameters ■ Minimum lot-to-lot spread for reliable operation ■ Very high switching speed Applications ■ Compact fluorescent lamps CFLs


    Original     		PDF STBV42 O-92AP STBV42G STBV42G-AP bv42 bv42 transistor BV42G st codeS to-92a STBV42 STBV42-AP JESD97

    BV45

    Abstract: BV45G JESD97 STBV45 STBV45-AP STBV45G STBV45G-AP smps schematic
    Text: STBV45 High voltage fast-switching NPN power transistor Features • High voltage capability ■ Low spread of dynamic parameters ■ Minimum lot-to-lot spread for reliable operation ■ Very high switching speed Applications ■ Compact fluorescent lamps CFLs


    Original     		PDF STBV45 O-92AP STBV45G STBV45G-AP BV45 BV45G JESD97 STBV45 STBV45-AP smps schematic

    bv42

    Abstract: bv42 transistor BV42 ST Transistor STBV42G-AP BV42G 7232 STBV42 STBV42-AP STBV42G
    Text: STBV42 High voltage fast-switching NPN power transistor Features • High voltage capability ■ Low spread of dynamic parameters ■ Very high switching speed Applications ■ Compact fluorescent lamps CFLs ■ SMPS for battery charger TO-92 TO-92AP Description


    Original     		PDF STBV42 O-92AP STBV42G STBV42G-AP bv42 bv42 transistor BV42 ST Transistor BV42G 7232 STBV42 STBV42-AP

    Untitled

    Abstract: No abstract text available
    Text: STBV45 High voltage fast-switching NPN power transistor Features • High voltage capability ■ Low spread of dynamic parameters ■ Minimum lot-to-lot spread for reliable operation ■ Very high switching speed s ct u d o Applications ■ Compact fluorescent lamps (CFLs)


    Original     		PDF STBV45 STBV45G STBV45G-AP

    Untitled

    Abstract: No abstract text available
    Text: STBV42D High voltage fast-switching NPN power transistor Preliminary data Features • High voltage capability ■ Low spread of dynamic parameters ■ Very high switching speed ■ Integrated free-wheeling diode s ct u d o Application ■ r P e Compact fluorescent lamps (CFLs)


    Original     		PDF STBV42D BV42D

    sot-23 bv2

    Abstract: marking BV4 2SB624
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23-3L Plastic-Encapsulate Transistors 2SB624 TRANSISTOR PNP SOT-23-3L FEATURES 1. BASE Power dissipation 3. COLLECTOR W (Tamb=25℃) 2. 80¡ À0. 05 0. 95¡ À0. 025 Collector current -0.7 A ICM: Collector-base voltage


    Original     		PDF OT-23-3L 2SB624 OT-23-3L -100mA -700mA -70mA -10mA sot-23 bv2 marking BV4 2SB624

    2SB624

    Abstract: 2SD596
    Text: NEC SILICON TRANSISTOR 2SB624 ^3£CTR0N DEVICE AUDIO FREQUENCY POWER AMPLIFIER PNP SILICON EPITAXIAL TRANSISTOR M IN I MOLD DESCRIPTION PACKAGE DIMENSIONS The 2SB624 is designed fo r use in small type equipments especially recom­ in millimeters 2.8 + 0.2


    OCR Scan     		PDF 2SB624 2SB624 2SD596 NECTOKJ22686

    2SB624

    Abstract: No abstract text available
    Text: SEC / ELECTRON DEVICE SILICON TRANSISTOR 2SB624 / AUDIO FREQUENCY POWER AMPLIFIER PIMP SILICON EPITAXIAL TRANSISTOR M IN I MOLD D E SC R IPTIO N PACK AG E D IM E N S IO N S The 2SB624 is designed for use in small type equipments especially recom­ mended fo r hybrid integrated circuit and other applications.


    OCR Scan     		PDF 2SB624 2SB624 2SD596